TI TAS5342LDDVR

TM
TAS5342L
www.ti.com
SLAS558 – OCTOBER 2007
100 W STEREO DIGITAL AMPLIFIER POWER STAGE
FEATURES
1
APPLICATIONS
•
•
•
DESCRIPTION
The TAS5342L is a high-performance, integrated
stereo digital amplifier power stage designed to drive
a 4-Ω bridge-tied load (BTL) at up to 100 W per
channel with low harmonic distortion, low integrated
noise, and low idle current.
The TAS5342L has a complete protection system
integrated on-chip, safeguarding the device against a
wide range of fault conditions that could damage the
system. These protection features are short-circuit
protection, over-current protection, under voltage
protection, over temperature protection, and a loss of
PWM signal (PWM activity detector).
A power-on-reset (POR) circuit is used to eliminate
power-supply sequencing that is required for most
power-stage designs.
BTL OUTPUT POWER
vs
SUPPLY VOLTAGE
120
110
TC = 75°C,
THD+N @ 10%
100
90
PO - Output Power - W
• Total Power Output (Bridge Tied Load)
– 2 × 100 W at 10% THD+N Into 4 Ω
– 2 × 80 W at 10% THD+N Into 6 Ω
– 2 × 65 W at 10% THD+N Into 8 Ω
• Total Power Output (Single Ended)
– 4 × 40 W at 10% THD+N Into 3 Ω
– 4 × 30 W at 10% THD+N Into 4 Ω
• Total Power Output (Parallel Mode)
– 1 × 200 W at 10% THD+N Into 2 Ω
– 1 × 160 W at 10% THD+N Into 3 Ω
• >110 dB SNR (A-Weighted With TAS5518
Modulator)
• <0.1% THD+N (1 W, 1 kHz)
• Supports PWM Frame Rates of 192 kHz to
432 kHz
• Resistor-Programmable Current Limit
• Integrated Self-Protection Circuitry, Including:
– Under Voltage Protection
– Overtemperature Warning and Error
– Overload Protection
– Short-Circuit Protection
– PWM Activity Detector
• Standalone Protection Recovery
• Power-On Reset (POR) to Eliminate System
Power-Supply Sequencing
• High-Efficiency Power Stage (>90%) With
110-mΩ Output MOSFETs
• Thermally Enhanced Package 44-Pin HTSSOP
(DDV)
• Error Reporting, 3.3-V and 5.0-V Compliant
• EMI Compliant When Used With
Recommended System Design
23
4W
80
6W
70
60
50
8W
40
30
20
10
0
0 2
4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
PVDD - Supply Voltage - Vrms
PurePath Digital™
Mini/Micro Audio System
DVD Receiver
Home Theater
1
2
3
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PurePath Digital, PowerPad are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2007, Texas Instruments Incorporated
TAS5342L
www.ti.com
SLAS558 – OCTOBER 2007
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
GENERAL INFORMATION
Terminal Assignment
The TAS5342L is available in a thermally enhanced package 44-pin HTSSOP PowerPad™ package (DDV)
This package contains a thermal pad that is located on the top side of the device for convenient thermal coupling
to the heatsink.
DDV PACKAGE
(TOP VIEW)
GVDD_B
OTW
NC
NC
SD
PWM_A
RESET_AB
PWM_B
OC_ADJ
GND
AGND
VREG
M3
M2
M1
PWM_C
RESET_CD
PWM_D
NC
NC
VDD
GVDD_C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
GVDD_A
BST_A
NC
PVDD_A
PVDD_A
OUT_A
GND_A
GND_B
OUT_B
PVDD_B
BST_B
BST_C
PVDD_C
OUT_C
GND_C
GND_D
OUT_D
PVDD_D
PVDD_D
NC
BST_D
GVDD_D
P0016-02
2
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SLAS558 – OCTOBER 2007
Protection MODE Selection Pins
Protection modes are selected by shorting M1, M2, and M3 to VREG or GND.
MODE PINS
(1)
(2)
(3)
Mode Name
PWM Input (1)
0
BTL mode 1
2N
All protection systems enabled
1
BTL mode 2
2N
Latching shudown on, PWM activity detector and OLP disabled
0
BTL mode 3
1N
M3
M2
M1
0
0
0
0
0
1
1N / 2N
Description
All protection systems enabled
(2)
0
1
1
PBTL mode
1
0
0
SE mode 1
1N
All protection systems enabled
All protection systems enabled (3)
1
0
1
SE mode 2
1N
Latching shudown on, PWM activity detector and OLP disabled (3)
1
1
0
1
1
1
Reserved
The 1N and 2N naming convention is used to indicate the number of PWM lines to the power stage per channel in a specific mode.
PWM_D is used to select between the 1N and 2N interface in PBTL mode (Low = 1N; High = 2N). PWM_D is internally pulled low in
PBTL mode. PWM_A is used as the PWM input in 1N mode and PWM_A and PWM_B are used as inputs for the 2N mode.
PPSC detection system disabled.
Package Heat Dissipation Ratings (1)
PARAMETER
TAS5342LDDV
RθJC (°C/W)—2 BTL or 4 SE channels
1.8
RθJC (°C/W)—1 BTL or 2 SE channel(s)
3.6
RθJC (°C/W)—1 SE channel
7.2
Power Pad area
(1)
(2)
(2)
36 mm2
JC is junction-to-case, CH is case-to-heatsink.
RθCH is an important consideration. Assume a 2-mil thickness of high performance grease with a thermal conductivity at 2.5W/m-K
between the pad area and the heat sink. The RθCH with this condition is 0.6°C/W for the DDV package.
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SLAS558 – OCTOBER 2007
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted
(1)
TAS5342L
VDD to AGND
–0.3 V to 13.2 V
GVDD_X to AGND
–0.3 V to 13.2 V
(2)
PVDD_X to GND_X
–0.3 V to 46V
OUT_X to GND_X
(2)
–0.3 V to 46V
BST_X to GND_X
(2)
–0.3 V to 59.2 V
BST_X to GVDD_X
(2)
–0.3 V to 46V
VREG to AGND
–0.3 V to 4.2 V
GND_X to GND
–0.3 V to 0.3 V
GND_X to AGND
–0.3 V to 0.3 V
GND to AGND
–0.3 V to 0.3 V
PWM_X, OC_ADJ, M1, M2, M3 to AGND
–0.3 V to 4.2 V
RESET_X, SD, OTW to AGND
–0.3 V to 7 V
Maximum continuous sink current (SD, OTW)
9 mA
Maximum operating junction temperature range, TJ
0°C to 125°C
Storage temperature
–40°C to 125°C
Lead temperature, 1,6 mm (1/16 inch) from case for 10 seconds
260°C
Minimum pulse duration, low
30 ns
(1)
(2)
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
These voltages represent the dc voltage + peak ac waveform measured at the terminal of the device in all conditions.
ORDERING INFORMATION (1)
(1)
4
TA
PACKAGE
DESCRIPTION
0°C to 70°C
TAS5342LDDV
44-pin HTSSOP
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
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SLAS558 – OCTOBER 2007
Terminal Functions
TERMINAL
NAME
DDV NO.
FUNCTION
(1)
DESCRIPTION
AGND
11
P
Analog ground
BST_A
43
P
Bootstrap pin, A-Side
BST_B
34
P
Bootstrap pin, B-Side
BST_C
33
P
Bootstrap pin, C-Side
BST_D
24
P
Bootstrap pin, D-Side
GND
10
P
Ground
GND_A
38
P
Power ground for half-bridge A
GND_B
37
P
Power ground for half-bridge B
GND_C
30
P
Power ground for half-bridge C
GND_D
29
P
Power ground for half-bridge D
GVDD_A
44
P
Gate-drive voltage supply; A-Side
GVDD_B
1
P
Gate-drive voltage supply; B-Side
GVDD_C
22
P
Gate-drive voltage supply; C-Side
GVDD_D
23
P
Gate-drive voltage supply; D-Side
M1
15
I
Mode selection pin (LSB)
M2
14
I
Mode selection pin
M3
13
I
Mode selection pin (MSB)
NC
3, 4, 19, 20, 25, 42
–
No connect. Pins may be grounded.
OC_ADJ
9
O
Analog overcurrent programming pin
OTW
2
O
Overtemperature warning signal, open-drain, active-low
OUT_A
39
O
Output, half-bridge A
OUT_B
36
O
Output, half-bridge B
OUT_C
31
O
Output, half-bridge C
OUT_D
28
O
Output, half-bridge D
PVDD_A
40, 41
P
Power supply input for half-bridge A
PVDD_B
35
P
Power supply input for half-bridge B
PVDD_C
32
P
Power supply input for half-bridge C
PVDD_D
26, 27
P
Power supply input for half-bridge D
PWM_A
6
I
PWM Input signal for half-bridge A
PWM_B
8
I
PWM Input signal for half-bridge B
PWM_C
16
I
PWM Input signal for half-bridge C
PWM_D
18
I
PWM Input signal for half-bridge D
RESET_AB
7
I
Reset signal for half-bridge A and half-bridge B, active-low
RESET_CD
17
I
Reset signal for half-bridge C and half-bridge D, active-low
SD
5
O
Shutdown signal, open-drain, active-low
VDD
21
P
Input power supply
VREG
12
P
Internal voltage regulator
(1)
I = input, O = output, P = power
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SLAS558 – OCTOBER 2007
TYPICAL SYSTEM BLOCK DIAGRAM
OTW
System
Microcontroller
SD
SD
OTW
I2C
TAS5518
BST_A
BST_B
RESET_AB
RESET_CD
VALID
PWM_A
LeftChannel
Output
OUT_A
Output
H-Bridge 1
Input
H-Bridge 1
PWM_B
OUT_B
Bootstrap
Capacitors
2nd-Order L-C
Output Filter
for Each
Half-Bridge
2-Channel
H-Bridge
BTL Mode
OUT_C
PWM_C
4
32.0 V
PVDD
System
Power
Supply
GND
12 V
4
PVDD
Power
Supply
Decoupling
OC_ADJ
AGND
M3
2nd-Order L-C
Output Filter
for Each
Half-Bridge
BST_C
VREG
M2
GND
Hardwire
Mode
Control
VDD
M1
OUT_D
GVDD_A, B, C, D
PWM_D
GND_A, B, C, D
Input
H-Bridge 2
PVDD_A, B, C, D
RightChannel
Output
Output
H-Bridge 2
BST_D
Bootstrap
Capacitors
4
GVDD
VDD
VREG
Power Supply
Decoupling
Hardwire
OC Limit
GND
GVDD (12 V)/VDD (12 V)
VAC
B0047-02
6
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SLAS558 – OCTOBER 2007
FUNCTIONAL BLOCK DIAGRAM
VDD
4
Undervoltage
Protection
OTW
Internal Pullup
Resistors to VREG
SD
M1
Protection
and
I/O Logic
M2
M3
4
VREG
VREG
Power
On
Reset
AGND
Temp.
Sense
GND
RESET_AB
Overload
Protection
RESET_CD
Isense
OC_ADJ
GVDD_D
BST_D
PVDD_D
PWM_D
PWM
Rcv.
Ctrl.
Timing
Gate
Drive
OUT_D
BTL/PBTL−Configuration
Pulldown Resistor
GND_D
GVDD_C
BST_C
PVDD_C
PWM_C
PWM
Rcv.
Ctrl.
Timing
Gate
Drive
OUT_C
BTL/PBTL−Configuration
Pulldown Resistor
GND_C
GVDD_B
BST_B
PVDD_B
PWM_B
PWM
Rcv.
Ctrl.
Timing
Gate
Drive
OUT_B
BTL/PBTL−Configuration
Pulldown Resistor
GND_B
GVDD_A
BST_A
PVDD_A
PWM_A
PWM
Rcv.
Ctrl.
Timing
Gate
Drive
OUT_A
BTL/PBTL−Configuration
Pulldown Resistor
GND_A
B0034-03
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SLAS558 – OCTOBER 2007
RECOMMENDED OPERATING CONDITIONS
MIN
TYP
MAX
UNIT
PVDD_X
Half-bridge supply voltage
0
32.0
34.0
V
GVDD_X
Supply voltage for logic regulators and
gate-drive circuitry
10.8
12
13.2
V
VDD
Digital regulator supply voltage
10.8
12
13.2
V
3
4
2.25
3
RL (BTL)
RL (SE)
RL (PBTL)
Resistive load impedance (no Cycle-by-Cycle
current control), recommended demodulation
filter
1.5
2
5
10
5
10
5
10
LOutput (BTL)
LOutput (SE)
Minimum output inductance under
short-circuit condition
Output-filter inductance
LOutput (PBTL)
μH
fS
PWM frame rate
192
tLOW
Minimum low-state pulse duration per PWM
Frame, noise shaper enabled
30
CPVDD
PVDD close decoupling capacitors
0.1
μF
CBST
Bootstrap capacitor, selected value supports
PWM frame rates from 192 kHz to 432 kHz
33
nF
ROC
Over-current programming resistor
REXT-PULLUP
External pull-up resistor to +3.3V to +5.0V for
SD or OTW
TJ
Junction temperature
Resistor tolerance = 5%
384
Ω
432
kHz
nS
22
22
3.3
4.7
47
kΩ
kΩ
0
125
°C
AUDIO SPECIFICATIONS (BTL)
Audio performance is recorded as a chipset consisting of a TAS5518 pwm processor (modulation index limited to 97.7%) and
a TAS5342L power stage. PCB and system configuraton are in accordance with recommended guidelines. Audio frequency =
1 kHz, PVDD_x = 32.0 V, GVDD_x = 12 V, RL = 4 Ω, fS = 384 kHz, ROC = 22 kΩ, TC = 75°C, Output Filter: LDEM = 10 μH,
CDEM = 470 nF, unless otherwise noted.
PARAMETER
POMAX
Maximum Power Output
PO
TAS5342L
TEST CONDITIONS
Unclipped Power Output
MIN
TYP
RL = 4 Ω, 10% THD+N, clipped input
signal
100
RL = 6 Ω, 10% THD+N, clipped input
signal
80
RL = 8 Ω, 10% THD+N, clipped input
signal
65
RL = 4 Ω, 0 dBFS, unclipped input
signal
80
RL = 6 Ω, 0 dBFS, unclipped input
signal
64
RL = 8 Ω, 0 dBFS, unclipped input
signal
50
0 dBFS; AES17 filter
MAX
UNIT
W
0.4%
THD+N
Total harmonic distortion + noise
Vn
Output integrated noise
A-weighted, AES17 filter, Auto mute
disabled
55
SNR
Signal-to-noise ratio
(1)
A-weighted, AES17 filter, Auto mute
disabled
110
dB
DNR
Dynamic range
A-weighted, input level = –60 dBFS,
AES17 filter
110
dB
DC Offset
Output offset voltage
+/- 15
mV
Pidle
Power dissipation due to idle losses (IPVDD_X)
3
W
(1)
(2)
8
1 W; AES17 filter
0.09%
PO = 0 W, all halfbridges switching (2)
μV
SNR is calculated relative to 0-dBFS input level.
Actual system idle losses are affected by core losses of output inductors.
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SLAS558 – OCTOBER 2007
AUDIO SPECIFICATIONS (Single-Ended Output)
Audio performance is recorded as a chipset consisting of a TAS5086 pwm processor (modulation index limited to 97.7%) and
a TAS5342L power stage. PCB and system configuraton are in accordance with recommended guidelines. Audio frequency =
1 kHz, PVDD_x = 32.0 V, GVDD_x = 12 V, RL = 4 Ω, fS = 384 kHz, ROC = 22 kΩ, TC = 75°C, Output Filter: LDEM = 20 μH,
CDEM = 1.0 μF, unless otherwise noted.
PARAMETER
POMAX
PO
Maximum Power Output
Unclipped Power Output
THD+N
TAS5342L
TEST CONDITIONS
Total harmonic distortion + noise
MIN
TYP
RL = 3 Ω, 10% THD+N, clipped input
signal
40
RL = 4 Ω, 10% THD+N, clipped input
signal
30
RL = 3 Ω, 0 dBFS, unclipped input
signal
30
RL = 4 Ω, 0 dBFS, unclipped input
signal
20
MAX
UNIT
W
0 dBFS; AES17 filter
0.4%
1 W; AES17 filter
0.09%
Vn
Output integrated noise
A-weighted, AES17 filter, Auto mute
disabled
35
μV
SNR
Signal-to-noise ratio (1)
A-weighted, AES17 filter, Auto mute
disabled
109
dB
DNR
Dynamic range
A-weighted, input level = –60 dBFS
AES17 filter
109
dB
Pidle
Power dissipation due to idle losses (IPVDD_X)
3
W
(1)
(2)
PO = 0 W, all half bridges
switching (2)
SNR is calculated relative to 0-dBFS input level.
Actual system idle losses are affected by core losses of output inductors.
AUDIO SPECIFICATIONS (PBTL)
Audio performance is recorded as a chipset consisting of a TAS5518 pwm processor (modulation index limited to 97.7%) and
a TAS5342L power stage. PCB and system configuraton are in accordance with recommended guidelines. Audio frequency =
1kHz, PVDD_x = 32.0 V, GVDD_x = 12 V, RL = 3 Ω, fS = 384 kHz, ROC = 22 kΩ, TC = 75°C, Output Filter: LDEM = 10 μH, CDEM
= 1.0 uF, unless otherwise noted.
PARAMETER
POMAX
PO
Maximum Power Output
Unclipped Power Output
THD+N
TAS5342L
TEST CONDITIONS
Total harmonic distortion + noise
MIN
TYP
RL = 2 Ω, 10% THD+N, clipped input
signal
200
RL = 3 Ω, 10% THD+N, clipped input
signal
160
RL = 2 Ω, 0 dBFS, unclipped input
signal
150
RL = 3 Ω, 0 dBFS, unclipped input
signal
120
0 dBFS; AES17 filter
MAX
UNIT
W
0.4%
1 W; AES17 filter
0.09%
Vn
Output integrated noise
A-weighted, AES17 filter, Auto mute
disabled
45
μV
SNR
Signal-to-noise ratio (1)
A-weighted, AES17 filter, Auto mute
disabled
110
dB
DNR
Dynamic range
A-weighted, input level = –60 dBFS
AES17 filter
110
dB
+/- 15
mV
DC Offset
(1)
Outuput offset voltage
SNR is calculated relative to 0-dBFS input level.
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SLAS558 – OCTOBER 2007
AUDIO SPECIFICATIONS (PBTL) (continued)
Audio performance is recorded as a chipset consisting of a TAS5518 pwm processor (modulation index limited to 97.7%) and
a TAS5342L power stage. PCB and system configuraton are in accordance with recommended guidelines. Audio frequency =
1kHz, PVDD_x = 32.0 V, GVDD_x = 12 V, RL = 3 Ω, fS = 384 kHz, ROC = 22 kΩ, TC = 75°C, Output Filter: LDEM = 10 μH, CDEM
= 1.0 uF, unless otherwise noted.
PARAMETER
Pidle
(2)
TAS5342L
TEST CONDITIONS
Power dissipation due to idle losses (IPVDD_X)
MIN
PO = 0 W, all half bridges
switching (2)
TYP
MAX
3
UNIT
W
Actual system idle losses are affected by core losses of output inductors.
ELECTRICAL CHARACTERISTICS
PVDD_x = 32.0 V, GVDD_X = 12 V, VDD = 12 V, TC (Case temperature) = 25°C, fS = 384 kHz, unless otherwise specified.
PARAMETER
TAS5342L
TEST CONDITIONS
MIN
TYP
MAX
3
3.3
3.6
Operating, 50% duty cycle
7.1
17
Idle, reset mode
5.6
11
50% duty cycle
5.9
12
1
1.8
UNIT
Internal Voltage Regulator and Current Consumption
VREG
Voltage regulator, only used as a
reference node
IVDD
VDD supply current
IGVDD_X
Gate supply current per half-bridge
IPVDD_X
Half-bridge idle current
VDD = 12 V
Reset mode
V
mA
mA
50% duty cycle, without output filter or load
10.5
20
mA
Reset mode, no switching
594
713
μA
Output Stage MOSFETs
RDSon,LS
Drain-to-source resistance, Low
Side
TJ = 25°C, excludes metallization resistance,
110
125
mΩ
RDSon,HS
Drain-to-source resistance, High
Side
TJ = 25°C, excludes metallization resistance,
110
125
mΩ
I/O Protection
Undervoltage protection limit,
GVDD_X
Vuvp,G
9.5
V
Vuvp,hyst (1)
Undervoltage protection limit,
GVDD_X
250
mV
BSTuvpF
Puts device into RESET when BST
voltage falls below limit
6.11
V
BSTuvpR
Brings device out of RESET when
BST voltage rises above limit
7.25
V
OTW (1)
Overtemperature warning
OTWHYST (1)
Temperature drop needed below
OTW temp. for OTW to be inactive
after the OTW event
OTE (1)
Overtemperature error threshold
OTEOTWdifferential (1)
OTE - OTW differential, temperature
delta between OTW and OTE
OLPC
Overload protection counter
fS = 384 kHz
IOC
Overcurrent limit protection
Resistor—programmable, high-end,
ROC = 22 kΩ with 1 ms pulse, TC= 75°C
IOCT
Overcurrent response time
tACTIVITY
Time for PWM activity detector to
activate when no PWM is present
DETECTOR
(1)
10
115
125
135
°C
25
145
Lack of transistion of any PWM input
7.9
155
°C
165
°C
30
°C
1.25
ms
8.4
A
150
ns
13.2
μS
Specified by design
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ELECTRICAL CHARACTERISTICS (continued)
PVDD_x = 32.0 V, GVDD_X = 12 V, VDD = 12 V, TC (Case temperature) = 25°C, fS = 384 kHz, unless otherwise specified.
PARAMETER
MIN
TYP
Connected when RESET is active to provide
bootstrap capacitor charge. Not used in SE
mode.
Output pulldown current of each
half-bridge
IPD
TAS5342L
TEST CONDITIONS
MAX
3
UNIT
mA
Static Digital Specifications
VIH
High-level input voltage
VIL
Low-level input voltage
ILeakage
Input leakage current
2
PWM_A, PWM_B, PWM_C, PWM_D, M1,
M2, M3, RESET_AB, RESET_CD
V
0.8
V
100
μA
kΩ
OTW/SHUTDOWN (SD)
RINT_PU
Internal pullup resistance, OTW to
VREG, SD to VREG
VOH
High-level output voltage
VOL
Low-level output voltage
IO = 4 mA
0.2
FANOUT
Device fanout OTW, SD
No external pullup
30
Internal pullup resistor
External pullup of 4.7 kΩ to 5 V
20
26
32
3
3.3
3.6
4.5
5
0.4
V
V
Devices
TYPICAL CHARACTERISTICS, BTL CONFIGURATION
TOTAL HARMONIC DISTORTION + NOISE
vs
OUTPUT POWER
OUTPUT POWER
vs
SUPPLY VOLTAGE
120
5
TC = 75°C,
THD+N @ 10%
110
8W
90
6W
1
TC = 75°C,
THD+N @ 10%
100
2
PO - Output Power - W
THD+N - Total Harmonic Distortion - %
10
0.5
4W
0.2
0.1
0.05
4W
80
6W
70
60
50
8W
40
30
0.02
20
0.01
10
0.005
20m
100m 200m
1 2
10 20
PO - Output Power - W
100 200
0
0 2
4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
PVDD - Supply Voltage - Vrms
Figure 1.
Figure 2.
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TYPICAL CHARACTERISTICS, BTL CONFIGURATION (continued)
UNCLIPPED OUTPUT POWER
vs
SUPPLY VOLTAGE
SYSTEM EFFICIENCY
vs
OUTPUT POWER
100
100
8W
TC = 75°C
90
90
80
4W
70
60
6W
50
8W
40
40
20
20
10
10
0
6 8 10 12 14 16 18 20 22 24 26 28 30 32
PVDD - Supply Voltage - Vrms
TC = 25°C,
THD+N @ 10%
0
20
40 60 80 100 120 140 160 180 200 220
2 Channels Output Power - W
Figure 3.
Figure 4.
SYSTEM POWER LOSS
vs
OUTPUT POWER
SYSTEM OUTPUT POWER
vs
CASE TEMPERATURE
130
40
TC = 25°C,
THD+N @ 10%
36
THD+N @ 10%
120
110
32
4W
4W
24
20
16
6W
12
PO - Output Power - W
100
28
Power Loss - W
50
30
0
90
80
6W
70
8W
60
50
40
30
8
20
8W
4
10
0
0
20
40 60 80 100 120 140 160 180 200 220
2 Channels Output Power - W
0
10
20 30
Figure 5.
12
4W
60
30
0 2 4
6W
70
Efficiency - %
PO - Output Power - W
80
40 50 60 70 80 90 100 110 120
TC - Case Temperature - °C
Figure 6.
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TYPICAL CHARACTERISTICS, BTL CONFIGURATION (continued)
NOISE AMPLITUDE
vs
FREQUENCY
+0
-10
-20
TC = 75°C,
VREF = 18.69 V,
Sample Rate = 48 kHz,
FFT Size = 16384
-30
Noise Amplitude - V
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
-160
0
2
4
6
8 10 12 14 16 18
f - Frequency - kHz
20
22
Figure 7.
TYPICAL CHARACTERISTICS, SE CONFIGURATION
TOTAL HARMONIC DISTORTION + NOISE
vs
OUTPUT POWER
OUTPUT POWER
vs
SUPPLY VOLTAGE
10
48
TC = 75°C,
THD+N @ 10%
44
36
1
0.5
0.2
0.1
3W
0.05
0.02
4W
32
28
3W
24
20
4W
16
12
8
0.01
0.005
20m
TC = 75°C,
THD+N @ 10%
40
2
PO - Output Power - W
THD+N - Total Harmonic Distortion - %
5
4
0
100m 200m
1
2
10
PO - Output Power - W
20
50
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
PVDD - Supply Voltage - Vrms
Figure 8.
Figure 9.
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TYPICAL CHARACTERISTICS, SE CONFIGURATION (continued)
OUTPUT POWER
vs
CASE TEMPERATURE
48
THD+N @ 10%
44
3W
PO - Output Power - W
40
36
4W
32
28
24
20
16
12
8
4
0
10
20
30
40 50 60 70 80 90 100 110 120
TC - Case Temperature - °C
Figure 10.
TYPICAL CHARACTERISTICS, PBTL CONFIGURATION
TOTAL HARMONIC DISTORTION + NOISE
vs
OUTPUT POWER
OUTPUT POWER
vs
SUPPLY VOLTAGE
5
240
TC = 75°C,
THD+N @ 10%
220
8W
4W
1
0.5
0.2
TC = 75°C,
THD+N @ 10%
200
2
PO - Output Power - W
THD+N - Total Harmonic Distortion - %
10
3W
2W
0.1
0.05
180
2W
160
3W
140
120
4W
100
8W
80
60
0.02
40
0.01
20
0.005
20m 100m200m
1 2
10 20
PO - Output Power - W
100 200 400
0
0
2
Figure 11.
14
4
6 8 10 12 14 16 18 20 22 24 26 28 30 32
PVDD - Supply Voltage - Vrms
Figure 12.
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TYPICAL CHARACTERISTICS, PBTL CONFIGURATION (continued)
SYSTEM OUTPUT POWER
vs
CASE TEMPERATURE
260
240
THD+N @ 10%
2W
220
PO - Output Power - W
200
180
3W
160
140
4W
120
100
80
8W
60
40
20
0
10 20
30 40 50 60 70 80 90 100 110 120
TC - Case Temperature - °C
Figure 13.
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APPLICATION INFORMATION
PCB Material Recommendation
FR-4 Glass Epoxy material with 2 oz. (70 μm) is recommended for use with the TAS5342L. The use of this
material can provide for higher power output, improved thermal performance, and better EMI margin (due to
lower PCB trace inductance.
PVDD Capacitor Recommendation
The large capacitors used in conjunction with each full-birdge, are referred to as the PVDD Capacitors. These
capacitors should be selected for proper voltage margin and adequate capacitance to support the power
requirements. In practice, with a well designed system power supply, 1000 μF, 50-V will support more
applications. The PVDD capacitors should be low ESR type because they are used in a circuit associtated with
high-speed switching.
Decoupling Capacitor Recommendations
In order to design an amplifier that has robust performance, passes regulatory requirements, and exhibits good
audio performance, good quality decoupling capacitors should be used. In practice, X7R should be used in this
application.
The voltage of the decoupling capactors should be selected in accordance with good design practices.
Temperature, ripple current, and voltage overshoot must be considered. This fact is particularly true in the
selection of the 0.1μF that is placed on the power supply to each half-bridge. It must withstand the voltage
overshoot of the PWM switching, the heat generated by the amplifier during high power output, and the ripple
current created by high power power output. A minimum voltage rating of 50-V is required for use with a 32.0 V
power supply.
System Design Recommendations
The following schematics and PCB layouts illustrate "best practices" in the use of the TAS5342L.
GVDD (+12 V)
10 W
PVDD
10 W
100 nF
3.3 W
470 µF
50 V
100 nF
10 nF
50 V
TAS5342LDDV
GND
Microcontroller
1
2
3
4
I2C
GND
6
PWM1_P
VALID
PWM1_M
27 k
GND
100 nF
PWM2_P
PWM2_M
TAS5508/18
5
0W
GND
100 nF
GVDD_B
OTW
NC
NC
SD
PWM_A
7
RESET_AB
8
PWM_B
9
OC_ADJ
10
GND
11
AGND
12
VREG
13
M3
14
M2
15
M1
16
PWM_C
17
RESET_CD
18
PWM_D
19
NC
20
NC
21
VDD
22
GVDD_C
GVDD_A
44
GND
43
42 33 nF 25 V
NC
41
GND
PVDD_A
40
PVDD_A
39
OUT_A
38
GND_A
37
GND
GND_B
36
OUT_B
35
PVDD_B
34 33 nF 25 V
BST_B
33
BST_C
32 33 nF 25V
PVDD_C
31
OUT_C
30
GND
GND_C
29
GND_D
28
OUT_D
27
PVDD_D
26
PVDD_D
25
GND
NC
24
BST_D
23
GVDD_D
33 nF 25 V
10 µH
100 nF
50 V
100 nF
50 V
3.3 W
1 nF
50 V
10 nF
50 V
470 nF
100 nF
50 V
100 nF
50 V
GND
1 nF
50 V
GND
10 nF
50 V
3.3 W
10 µH
10 µH
3.3 W
1 nF
50 V
100 nF
50 V
10 nF
50 V
100 nF
50 V
470 nF
100 nF
50 V
100 nF
50 V
GND
1 nF
50 V
GND
10 nF
50 V
3.3 W
10 µH
PVDD
3.3 W
GND
100 nF
100 nF
10 W
VDD (+12 V)
GND
BST_A
GND
470 µF
50 V
10 nF
50 V
10 W
GND
GND
GVDD (+12 V)
Figure 14. Typical Differential (2N) BTL Application With AD Modulation Filters
16
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GVDD (+12 V)
10 W
PVDD
10 W
100 nF
3.3 W
470 µF
50 V
100 nF
10 nF
50 V
TAS5342LDDV
GND
Microcontroller
I2C
GND
PWM1_P
VALID
27 k
GND
100 nF
PWM2_P
TAS5508/18
0W
GND
100 nF
1
GVDD_B
2
OTW
3
NC
4
NC
5
SD
6
PWM_A
7
RESET_AB
8
PWM_B
9
OC_ADJ
10
GND
11
AGND
12
VREG
13
M3
14
M2
15
M1
16
PWM_C
17
RESET_CD
18
PWM_D
19
NC
20
NC
21
VDD
22
GVDD_C
GVDD_A
44
GND
43
42 33 nF 25 V
NC
GND
41
PVDD_A
40
PVDD_A
39
OUT_A
38
GND_A
37
GND
GND_B
36
OUT_B
35
PVDD_B
34 33 nF 25 V
BST_B
33
BST_C
3233 nF 25V
PVDD_C
31
OUT_C
30
GND
GND_C
29
GND_D
28
OUT_D
27
PVDD_D
26
PVDD_D
25
GND
NC
24
BST_D
23
GVDD_D
33 nF 25 V
10 µH
100 nF
50 V
100 nF
50 V
3.3 W
1 nF
50 V
10 nF
50 V
470 nF
100 nF
50 V
100 nF
50 V
GND
1 nF
50 V
GND
10 nF
50 V
3.3 W
10 µH
10 µH
3.3 W
1 nF
50 V
100 nF
50 V
10 nF
50 V
100 nF
50 V
470 nF
100 nF
50 V
100 nF
50 V
GND
1 nF
50 V
GND
10 nF
50 V
3.3 W
10 µH
PVDD
3.3 W
GND
100 nF
100 nF
10 W
VDD (+12 V)
GND
BST_A
GND
470 µF
50 V
10 nF
50 V
10 W
GND
GND
GVDD (+12 V)
Figure 15. Typical Non-Differential (1N) BTL Application With AD Modulation Filters
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GVDD (+12 V)
10 W
PVDD
10 W
100 nF
3.3 W
470 µF
50 V
100 nF
10 nF
50 V
TAS5342LDDV
GND
Microcontroller
I2C
GND
PWM1_P
VALID
PWM2_P
27 k
GND
100 nF
PWM3_P
PWM4_P
TAS5508/18
0W
GND
100 nF
1
GVDD_B
2
OTW
3
NC
4
NC
5
SD
6
PWM_A
7
RESET_AB
8
PWM_B
9
OC_ADJ
10
GND
11
AGND
12
VREG
13
M3
14
M2
15
M1
16
PWM_C
17
RESET_CD
18
PWM_D
19
NC
20
NC
21
VDD
22
GVDD_C
GVDD_A
44
GND
20 µH
43
42 33 nF 25 V
NC
GND
41
PVDD_A
40
PVDD_A
39
OUT_A
38
GND_A
37
GND
GND_B
36
OUT_B
35
PVDD_B
34 33 nF 25 V
BST_B
33
BST_C
3233 nF 25V
PVDD_C
31
OUT_C
30
GND
GND_C
29
GND_D
28
OUT_D
27
PVDD_D
26
PVDD_D
25
GND
NC
24
BST_D
23
GVDD_D
33 nF 25 V
BST_A
A
100 nF
50 V
100 nF
50 V
20 µH
B
C
20 µH
100 nF
50 V
100 nF
50 V
20 µH
D
PVDD
3.3 W
GND
10 W
10 nF
50 V
10 W
GND
GND
VDD (+12 V)
470 µF
50 V
100 nF
100 nF
GND
GVDD (+12 V)
10 nF
50 V
10 nF
50 V
3.3 W
GND
A
3.3 W
GND
B
100nF
50V
PVDD
10 k
470 µF
50 V
1 µF
100nF
50 V
470 µF
50 V
10 k
470 µF
50V
1 µF
100 nF
50 V
GND
470 µF
50 V
3.3 W
GND
100 nF
50 V
PVDD
50 V
10 nF
3.3 W
GND
50 V
10 nF
GND
GND
10 nF
50 V
10 nF
50 V
3.3 W
GND
GND
C
3.3 W
GND
D
PVDD
10 k
470 µF
50 V
1 µF
100 nF
50 V
100 nF
50 V
470 µF
50 V
50 V
10 nF
10 k
470 µF
50 V
GND
GND
1 µF
100 nF
50 V
470 µF
50 V
3. 3 W
GND
100 nF
50 V
PVDD
GND
3.3 W
GND
50 V
10 nF
GND
Figure 16. Typical SE Application
18
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GVDD (+12 V)
10 W
PVDD
10 W
100 nF
3.3 W
470 µF
50 V
100 nF
10 nF
50 V
TAS5342LDDV
GND
Microcontroller
I2C
GND
PWM1_P
VALID
PWM1_M
1
GVDD_B
2
OTW
3
NC
4
NC
5
SD
6
PWM_A
7
RESET_AB
8
27 k
9
0W
10
11
GND
12
13
100 nF
14
15
16
17
TAS5508/18
0W
GND
100 nF
PWM_B
OC_ADJ
GND
AGND
VREG
M3
M2
M1
PWM_C
RESET_CD
18
PWM_D
19
NC
20
NC
21
VDD
22
GVDD_C
GVDD_A
44
GND
43
42 33 nF 25 V
NC
41
GND
PVDD_A
40
PVDD_A
39
OUT_A
38
GND_A
37
GND
GND_B
36
OUT_B
35
PVDD_B
34 33 nF 25 V
BST_B
33
BST_C
3233 nF 25V
PVDD_C
31
OUT_C
30
GND
GND_C
29
GND_D
28
OUT_D
27
PVDD_D
26
PVDD_D
25
GND
NC
24
BST_D
23
GVDD_D
33 nF 25 V
10 µH
GND
BST_A
100 nF
100 nF
50 V
100 nF
50 V
10 µH
10 nF
50 V
1 µF
100 nF
50 V
10 µH
1 nF
50 V
100 nF
50 V
10 nF
50 V
GND
3.3 W
100 nF
50 V
10 µH
PVDD
3.3 W
GND
470 µF
50 V
100 nF
100 nF
10 W
10 nF
50 V
10 W
GND
GND
VDD (+12 V)
3.3 W
1 nF
50 V
GND
GVDD (+12 V)
Figure 17. Typical Differential (2N) PBTL Application With AD Modulation Filters
GVDD (+12 V)
10 W
PVDD
10 W
100 nF
3.3 W
470 µF
50 V
100 nF
10 nF
50 V
TAS5342LDDV
GND
Microcontroller
I2C
GND
PWM1_P
VALID
PWM1_M
27 k
0W
GND
100 nF
TAS5508/18
0W
GND
100 nF
1
GVDD_B
2
OTW
3
NC
4
NC
5
SD
6
PWM_A
7
RESET_AB
8
PWM_B
9
OC_ADJ
10
GND
11
AGND
12
VREG
13
M3
14
M2
15
M1
16
PWM_C
17
RESET_CD
18
PWM_D
19
NC
20
NC
21
VDD
22
GVDD_C
GVDD_A
44
GND
43
42 33 nF 25 V
NC
41
GND
PVDD_A
40
PVDD_A
39
OUT_A
38
GND_A
37
GND
GND_B
36
OUT_B
35
PVDD_B
34 33 nF 25 V
BST_B
33
BST_C
3233 nF 25V
PVDD_C
31
OUT_C
30
GND
GND_C
29
GND_D
28
OUT_D
27
PVDD_D
26
PVDD_D
25
GND
NC
24
BST_D
23
GVDD_D
33 nF 25 V
10 µH
100 nF
50 V
100 nF
50 V
100 nF
50 V
10 µH
3.3 W
1 nF
50 V
10 nF
50 V
1 µF
10 µH
100 nF
50 V
1 nF
50 V
100 nF
50 V
10 nF
50 V
GND
3.3 W
100 nF
50 V
10 µH
PVDD
3.3 W
GND
100 nF
100 nF
10 W
VDD (+12 V)
GND
BST_A
GND
470 µF
50 V
10 nF
50 V
10 W
GND
GND
GVDD (+12 V)
Figure 18. Typical Non-Differential (1N) PBTL Application
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THEORY OF OPERATION
POWER SUPPLIES
To facilitate system design, the TAS5342L needs only
a 12-V supply in addition to the (typical) 32.0-V
power-stage supply. An internal voltage regulator
provides suitable voltage levels for the digital and
low-voltage analog circuitry. Additionally, all circuitry
requiring a floating voltage supply, e.g., the high-side
gate drive, is accommodated by built-in bootstrap
circuitry requiring only an external capacitor for each
half-bridge.
In order to provide outstanding electrical and
acoustical characteristics, the PWM signal path
including gate drive and output stage is designed as
identical, independent half-bridges. For this reason,
each half-bridge has separate gate drive supply
(GVDD_X), bootstrap pins (BST_X), and power-stage
supply pins (PVDD_X). Furthermore, an additional pin
(VDD) is provided as supply for all common circuits.
Although supplied from the same 12-V source, it is
highly recommended to separate GVDD_A,
GVDD_B, GVDD_C, GVDD_D, and VDD on the
printed-circuit board (PCB) by RC filters (see
application diagram for details). These RC filters
provide the recommended high-frequency isolation.
Special attention should be paid to placing all
decoupling capacitors as close to their associated
pins as possible. In general, inductance between the
power supply pins and decoupling capacitors must be
avoided. (See reference board documentation for
additional information.)
For a properly functioning bootstrap circuit, a small
ceramic capacitor must be connected from each
bootstrap pin (BST_X) to the power-stage output pin
(OUT_X). When the power-stage output is low, the
bootstrap capacitor is charged through an internal
diode connected between the gate-drive power-supply pin (GVDD_X) and the bootstrap pin. When
the power-stage output is high, the bootstrap
capacitor potential is shifted above the output
potential and thus provides a suitable voltage supply
for the high-side gate driver. In an application with
PWM switching frequencies in the range from 352
kHz to 384 kHz, it is recommended to use 33-nF
ceramic capacitors, size 0603 or 0805, for the
bootstrap supply. These 33-nF capacitors ensure
sufficient energy storage, even during minimal PWM
duty cycles, to keep the high-side power stage FET
(LDMOS) fully turned on during the remaining part of
the PWM cycle. In an application running at a
reduced switching frequency, generally 192 kHz, the
bootstrap capacitor might need to be increased in
value.
20
Special attention should be paid to the power-stage
power supply; this includes component selection,
PCB placement, and routing. As indicated, each
half-bridge has independent power-stage supply pins
(PVDD_X). For optimal electrical performance, EMI
compliance, and system reliability, it is important that
each PVDD_X pin is decoupled with a 100-nF
ceramic capacitor placed as close as possible to
each supply pin. It is recommended to follow the PCB
layout of the TAS5342L reference design. For
additional information on recommended power supply
and required components, see the application
diagrams given previously in this data sheet.
The 12-V supply should be from a low-noise,
low-output-impedance voltage regulator. Likewise, the
32.0 V power-stage supply is assumed to have low
output impedance and low noise. The power-supply
sequence is not critical as facilitated by the internal
power-on-reset circuit. Moreover, the TAS5342L is
fully protected against erroneous power-stage turnon
due to parasitic gate charging. Thus, voltage-supply
ramp rates (dV/dt) are non-critical within the specified
range (see the Recommended Operating Conditions
section of this data sheet).
SYSTEM POWER-UP/POWER-DOWN
SEQUENCE
Powering Up
The TAS5342L does not require a power-up
sequence. The outputs of the H-bridges remain in a
high-impedance state until the gate-drive supply
voltage (GVDD_X) and VDD voltage are above the
undervoltage protection (UVP) voltage threshold (see
the Electrical Characteristics section of this data
sheet). Although not specifically required, it is
recommended to hold RESET_AB and RESET_CD in
a low state while powering up the device. This allows
an internal circuit to charge the external bootstrap
capacitors by enabling a weak pulldown of the
half-bridge output.
When the TAS5342L is being used with TI PWM
modulators such as the TAS5518, no special
attention to the state of RESET_AB and RESET_CD
is required, provided that the chipset is configured as
recommended.
Powering Down
The TAS5342L does not require a power-down
sequence. The device remains fully operational as
long as the gate-drive supply (GVDD_X) voltage and
VDD voltage are above the undervoltage protection
(UVP) voltage threshold (see the Electrical
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Characteristics section of this data sheet). Although
not specifically required, it is a good practice to hold
RESET_AB and RESET_CD low during power down,
thus preventing audible artifacts including pops or
clicks.
signal using the system microcontroller and
responding to an overtemperature warning signal by,
e.g., turning down the volume to prevent further
heating of the device resulting in device shutdown
(OTE).
When the TAS5342L is being used with TI PWM
modulators such as the TAS5518, no special
attention to the state of RESET_AB and RESET_CD
is required, provided that the chipset is configured as
recommended.
To reduce external component count, an internal
pullup resistor to 3.3 V is provided on both SD and
OTW outputs. Level compliance for 5-V logic can be
obtained by adding external pullup resistors to 5 V
(see the Electrical Characteristics section of this data
sheet for further specifications).
Mid Z Sequence Compatability
The TAS5342L is compatable with the Mid Z
sequence of the TAS5086 Modulator. The Mid Z
Sequence is a series of pulses that is generated by
the modulator. This sequence causes the power
stage to slowly enable its outputs as it begins to
switch.
By slowly starting the PWM switching, the impulse
response created by the onset of switching is
reduced. This impulse response is the acoustic
artifact that is heard in the output transducers
(loudspeakers) and is commonly termed "click" or
"pop".
The low acoustic artifact noise of the TAS5342L will
be further decreased when used in conjunction with
the TAS5086 modulator with the Mid Z Sequence
enabled.
The Mid Z sequence is primarily used for the
single-ended output configuration. It facilitates a
"softer" PWM output start after the split cap output
configuration is charged.
DEVICE PROTECTION SYSTEM
The TAS5342L contains advanced protection circuitry
carefully designed to facilitate system integration and
ease of use, as well as to safeguard the device from
permanent failure due to a wide range of fault
conditions such as short circuits, overload,
overtemperature, and undervoltage. The TAS5342L
responds to a fault by immediately setting the power
stage in a high-impedance (Hi-Z) state and asserting
the SD pin low. In situations other than overload and
over-temperature
error
(OTE),
the
device
automatically recovers when the fault condition has
been removed, i.e., the supply voltage has increased.
The device will function on errors, as shown in the
following table.
BTL MODE
Local
Error
In
A
B
C
ERROR REPORTING
The SD and OTW pins are both active-low,
open-drain
outputs.
Their
function
is
for
protection-mode signaling to a PWM controller or
other system-control device.
Any fault resulting in device shutdown is signaled by
the SD pin going low. Likewise, OTW goes low when
the device junction temperature exceeds 125°C (see
the following table).
SD
OTW
DESCRIPTION
0
0
Overtemperature (OTE) or overload (OLP) or
undervoltage (UVP)
0
1
Overload (OLP) or undervoltage (UVP)
1
0
Junction temperature higher than 125°C
(overtemperature warning)
1
1
Junction temperature lower than 125°C and no
OLP or UVP faults (normal operation)
Note that asserting either RESET_AB or RESET_CD
low forces the SD signal high, independent of faults
being present. TI recommends monitoring the OTW
D
Turns Off
A+B
C+D
PBTL MODE
Local
Error
In
Turns Off
A
B
C
D
SE MODE
Local
Error
In
Turns Off
A
A+B+C
+D
B
C
D
A+B
C+D
Bootstrap UVP does not shutdown according to the
table, it shutsdown the respective halfbridge.
Use of TAS5342L in High-Modulation-Index
Capable Systems
This device requires at least 30 ns of low time on the
output per 384-kHz PWM frame rate in order to keep
the bootstrap capacitors charged. As an example, if
the modulation index is set to 99.2% in the TAS5508,
this setting allows PWM pulse durations down to 10
ns. This signal, which does not meet the 30-ns
requirement, is sent to the PWM_X pin and this
low-state pulse time does not allow the bootstrap
capacitor to stay charged. The TAS5342L device
requires limiting the TAS5508 modulation index to
97.7% to keep the bootstrap capacitor charged under
all signals and loads.
The TAS5342L contains a bootstrap capacitor under
voltage protection circuit (BST_UVP) that monitors
the voltage on the bootstrap capacitors. When the
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TAS5342L
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SLAS558 – OCTOBER 2007
voltage on the bootstrap capacitors is less than
required for proper control of the High-Side
MOSFETs, the device will initiate bootstrap capacitor
recharge sequences until the bootstrap capacitors are
properly charged for robust operation. This function
may be activated with PWM pulses less than 30 nS.
Therefore, TI strongly recommends using a TI PWM
processor, such as TAS5518, TAS5086 or TAS5508,
with the modulation index set at 97.7% to interface
with TAS5342L.
Overcurrent (OC) Protection With Current
Limiting and Overload Detection
The device has independent, fast-reacting current
detectors with programmable trip threshold (OC
threshold) on all high-side and low-side power-stage
FETs. See the following table for OC-adjust resistor
values. The detector outputs are closely monitored by
two protection systems. The first protection system
controls the power stage in order to prevent the
output current from further increasing, i.e., it performs
a current-limiting function rather than prematurely
shutting down during combinations of high-level
music transients and extreme speaker load
impedance drops. If the high-current situation
persists, i.e., the power stage is being overloaded, a
second protection system triggers a latching
shutdown, resulting in the power stage being set in
the high-impedance (Hi-Z) state. Current limiting and
overload protection are independent for half-bridges
A and B and, respectively, C and D. That is, if the
bridge-tied load between half-bridges A and B causes
an overload fault, only half-bridges A and B are shut
down.
• For the lowest-cost bill of materials in terms of
component selection, the OC threshold measure
should be limited, considering the power output
requirement and minimum load impedance.
Higher-impedance loads require a lower OC
threshold.
• The demodulation-filter inductor must retain at
least 5 μH of inductance at twice the OC threshold
setting.
Unfortunately, most inductors have decreasing
inductance with increasing temperature and
increasing current (saturation). To some degree, an
increase in temperature naturally occurs when
operating at high output currents, due to core losses
and the dc resistance of the inductor's copper
winding. A thorough analysis of inductor saturation
and thermal properties is strongly recommended.
Setting the OC threshold too low might cause issues
such as lack of enough output power and/or
unexpected shutdowns due to too-sensitive overload
detection.
22
In general, it is recommended to follow closely the
external component selection and PCB layout as
given in the Application section.
For added flexibility, the OC threshold is
programmable within a limited range using a single
external resistor connected between the OC_ADJ pin
and AGND. (See the Electrical Characteristics section
of this data sheet for information on the correlation
between programming-resistor value and the OC
threshold.) It should be noted that a properly
functioning overcurrent detector assumes the
presence of a properly designed demodulation filter at
the power-stage output. Short-circuit protection is not
provided directly at the output pins of the power stage
but only on the speaker terminals (after the
demodulation filter). It is required to follow certain
guidelines when selecting the OC threshold and an
appropriate demodulation inductor:
OC-Adjust Resistor Values
(kΩ)
Max. Current Before OC Occurs
(A), TC=75°C
22
8.4 A
33
6.8 A
47
5.3 A
The reported max peak current in the table above is
measured with continuous current in 1 Ω, one
channel active and the other one muted.
Pin-To-Pin Short Circuit Protection System
(PPSC)
The PPSC detection system protects the device from
permanent damage in the case that a power output
pin (OUT_X) is shorted to GND_X or PVDD_X. For
comparison the OC protection system detects an over
current after the demodulation filter where PPSC
detects shorts directly at the pin before the filter.
PPSC detection is performed at startup i.e. when
VDD is supplied, consequently a short to either
GND_X or PVDD_X after system startup will not
activate the PPSC detection system. When PPSC
detection is activated by a short on the output, all half
bridges are kept in a Hi-Z state until the short is
removed, the device then continues the startup
sequence and starts switching. The detection is
controlled globally by a two step sequence. The first
step ensures that there are no shorts from OUT_X to
GND_X, the second step tests that there are no
shorts from OUT_X to PVDD_X. The total duration of
this process is roughly proportional to the capacitance
of the output LC filter. The typical duration is < 15
ms/μF. While the PPSC detection is in progress, SD
is kept low, and the device will not react to changes
applied to the RESET pins. If no shorts are present
the PPSC detection passes, and SD is released. A
device reset will not start a new PPSC detection.
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PPSC detection is enabled in BTL and PBTL output
configurations, the detection is not performed in SE
mode. To make sure not to trip the PPSC detection
system it is recommended not to insert resistive load
to GND_X or PVDD_X.
VDD or GVDD_X pin results in all half-bridge outputs
immediately being set in the high-impedance (Hi-Z)
state and SD being asserted low. The device
automatically resumes operation when all supply
voltages have increased above the UVP threshold.
Overtemperature Protection
DEVICE RESET
The
TAS5342L
has
a
two-level
temperature-protection system that asserts an
active-low warning signal (OTW) when the device
junction temperature exceeds 125°C (nominal) and, if
the device junction temperature exceeds 155°C
(nominal), the device is put into thermal shutdown,
resulting in all half-bridge outputs being set in the
high-impedance (Hi-Z) state and SD being asserted
low. OTE is latched in this case. To clear the OTE
latch, either RESET_AB or RESET_CD must be
asserted. Thereafter, the device resumes normal
operation.
Two reset pins are provided for independent control
of half-bridges A/B and C/D. When RESET_AB is
asserted low, all four power-stage FETs in half-bridges A and B are forced into a high-impedance
(Hi-Z) state. Likewise, asserting RESET_CD low
forces all four power-stage FETs in half-bridges C
and D into a high-impedance state. Thus, both reset
pins are well suited for hard-muting the power stage if
needed.
Undervoltage Protection (UVP) and Power-On
Reset (POR)
The UVP and POR circuits of the TAS5342L fully
protect the device in any power-up/down and
brownout situation. While powering up, the POR
circuit resets the overload circuit (OLP) and ensures
that all circuits are fully operational when the
GVDD_X and VDD supply voltages reach stated in
the Electrical Characteristics Table. Although
GVDD_X and VDD are independently monitored, a
supply voltage drop below the UVP threshold on any
In BTL modes, to accommodate bootstrap charging
prior to switching start, asserting the reset inputs low
enables weak pulldown of the half-bridge outputs. In
the SE mode, the weak pulldowns are not enabled,
and it is therefore recommended to ensure bootstrap
capacitor charging by providing a low pulse on the
PWM inputs when reset is asserted high.
Asserting either reset input low removes any fault
information to be signalled on the SD output, i.e., SD
is forced high.
A rising-edge transition on either reset input allows
the device to resume operation after an overload
fault. To ensure thermal reliability, the rising edge of
reset must occur no sooner than 4ms after the falling
edge of SD.
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23
PACKAGE OPTION ADDENDUM
www.ti.com
19-Nov-2007
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TAS5342LDDV
ACTIVE
HTSSOP
DDV
44
35
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
TAS5342LDDVG4
ACTIVE
HTSSOP
DDV
44
35
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
TAS5342LDDVR
ACTIVE
HTSSOP
DDV
44
2000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
TAS5342LDDVRG4
ACTIVE
HTSSOP
DDV
44
2000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
6-Nov-2007
TAPE AND REEL BOX INFORMATION
Device
TAS5342LDDVR
Package Pins
DDV
44
Site
Reel
Diameter
(mm)
Reel
Width
(mm)
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
SITE 60
330
24
8.6
15.6
1.8
12
Pack Materials-Page 1
W
Pin1
(mm) Quadrant
24
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
6-Nov-2007
Device
Package
Pins
Site
Length (mm)
Width (mm)
Height (mm)
TAS5342LDDVR
DDV
44
SITE 60
367.0
367.0
45.0
Pack Materials-Page 2
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