TAS5613 PurePath Digital www.ti.com SLAS676 – NOVEMBER 2009 150W STEREO / 300W MONO PurePath™ HD ANALOG-INPUT POWER STAGE Check for Samples: TAS5613 • 23 • • • • • • • Active Enabled Integrated Feedback Provides: (PurePath™ HD) – Signal Bandwidth up to 80kHz for High Frequency Content From HD Sources – Ultra Low 0.03% THD at 1W into 4Ω – Flat THD at all Frequencies for Natural Sound – 80dB PSRR (BTL, No Input Signal) – >100dB (A Weighted) SNR – Click and Pop Free Startup and Stop Pin compatible with TAS5630, TAS5615 and TAS5611 Multiple Configurations Possible on the Same PCB: – Mono Parallel Bridge Tied Load (PBTL) – Stereo Bridge Tied Load (BTL) – 2.1 Single Ended (SE) Stereo Pair and Bridge Tied Load Subwoofer Total Output Power at 10%THD+N – 300W in Mono PBTL Configuration – 150W per Channel in Stereo BTL Configuration Total Output Power in BTL Configuration at 1%THD+N – 160W Stereo into 3Ω – 125W Stereo into 4Ω – 85W Stereo into 6Ω – 65W Stereo into 8Ω >90% Efficient Power Stage With 60-mΩ Output MOSFETs Self-Protection Design (Including Undervoltage, Overtemperature, Clipping, and Short Circuit Protection) With Error Reporting EMI Compliant When Used With Recommended System Design • Two Thermally Enhanced Package Options: – PHD (64-pin QFP) – DKD (44-pin PSOP3) APPLICATIONS • • • • • Home Theater Systems AV Receivers DVD/ Blu-ray Disk™ Receivers Mini Combo Systems Active Speakers and Subwoofers DESCRIPTION The TAS5613 is a high-performance analog input Class D amplifier with integrated closed loop feedback technology (known as PurePath™ HD). It has the ability to drive up to 150 W. (1) Stereo into 4Ω speakers from a single 36V supply. PurePath™ HD technology enables traditional AB-Amplifier performance (<0.03% THD) levels while providing the power efficiency of traditional class D amplifiers. Unlike traditional Class-D amplifiers, the distortion curve only increases once the output levels move into clipping. PurePath™ HD technology enables lower idle losses making the device even more efficient. TOTAL HARMONIC DISTORTION+NOISE VS OUTPUT POWER 10 4Ohm (6kHz) TC = 75 C CONFIG = BTL 4Ohm (1kHz) THD+N - Total tal Harmonic Distortion - % FEATURES 1 1 0,1 0,01 0,001 0,01 1 100 PO - Output Power - W (1) Achievable output power levels are dependent on the thermal configuration of the target application. A high performance thermal interface material between the package exposed heatslug and the heat sink should be used to achieve high output power levels 1 2 3 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Blu-ray Disk is a trademark of Blu-ray Disc Association. All other trademarks are the property of their respective owners. UNLESS OTHERWISE NOTED this document contains PRODUCTION DATA information current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2009, Texas Instruments Incorporated TAS5613 SLAS676 – NOVEMBER 2009 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. DEVICE INFORMATION Terminal Assignment The TAS5613 is available in two thermally enhanced packages: • 64-Pin QFP (PHD) Power Package • 44-Pin PSOP3 package (DKD) The package type contains a heat slugs that is located on the top side of the device for convenient thermal coupling to the heat sink. DKD PACKAGE (TOP VIEW) 64-pins QFP package 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 GND_A GND_B GND_B OUT_B OUT_B PVDD_B PVDD_B BST_B BST_C PVDD_C PVDD_C OUT_C OUT_C GND_C GND_C GND_D OTW2 CLIP READY M1 M2 M3 GND GND GVDD_C GVDD_D BST_D OUT_D OUT_D PVDD_D PVDD_D GND_D 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 PSU_REF VDD OC_ADJ RESET C_STARTUP INPUT_A INPUT_B VI_CM GND AGND VREG INPUT_C INPUT_D FREQ_ADJ OSC_IO+ OSC_IOSD OTW READY M1 M2 M3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 pins PACKAGE (TOP VIEW) OC_ADJ RESET C_STARTUP INPUT_A INPUT_B VI_CM GND AGND VREG INPUT_C INPUT_D FREQ_ADJ OSC_IO+ OSC_IOSD OTW1 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 VDD PSU_REF NC NC NC NC GND GND GVDD_B GVDD_A BST_A OUT_A OUT_A PVDD_A PVDD_A GND_A PHD PACKAGE (TOP VIEW) 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 GVDD_AB BST_A PVDD_A PVDD_A OUT_A OUT_A GND_A GND_B OUT_B PVDD_B BST_B BST_C PVDD_C OUT_C GND_C GND_D OUT_D OUT_D PVDD_D PVDD_D BST_D GVDD_CD PIN ONE LOCATION PHD PACKAGE Electrical Pin 1 Pin 1 Marker White Dot 2 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TAS5613 TAS5613 www.ti.com SLAS676 – NOVEMBER 2009 MODE SELECTION PINS MODE PINS M3 M2 M1 ANALOG INPUT OUTPUT CONFIGURATION 0 0 0 Differential 2 × BTL AD mode 0 0 1 — — Reserved 0 1 0 Differential 2 × BTL BD mode 1 × BTL + 2 × SE 4 × SE (1) 0 1 1 Differential (BTL) Single Ended (SE) 1 0 0 Single Ended 1 0 1 1 1 0 1 1 1 Differential 1 × PBTL DESCRIPTION BTL = BD mode, SE = AD mode AD mode INPUT_C (1) INPUT_D (1) 0 0 AD mode 1 0 BD mode Reserved INPUT_C and D are used to select between a subset of AD and BD mode operations in PBTL mode (1=VREG and 0=GND). PACKAGE HEAT DISSIPATION RATINGS (1) PARAMETER TAS5613PHD TAS5613DKD RθJC (°C/W) – 2 BTL or 4 SE channels 3.2 2.1 RθJC (°C/W) – 1 BTL or 2 SE channel(s) 5.4 3.5 RθJC (°C/W) – 1 SE channel 7.9 Pad Area (1) (2) (2) 5.1 2 64 mm 80 mm2 JC is junction-to-case, CH is case-to-heat sink RθH is an important consideration. Assume a 2-mil thickness of typical thermal grease between the pad area and the heat sink and both channels active. The RθCH with this condition is 1.22°C/W for the PHD package and 1.02°C/W for the DKD package. Table 1. ORDERING INFORMATION (1) (1) TA PACKAGE DESCRIPTION 0°C–70°C TAS5613PHD 64 pin HTQFP 0°C–70°C TAS5613DKD 44 pin PSOP3 For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TAS5613 3 TAS5613 SLAS676 – NOVEMBER 2009 www.ti.com ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range unless otherwise noted (1) TAS5613 UNIT VDD to GND –0.3 to 13.2 V GVDD to GND –0.3 to 13.2 V –0.3 to 53 V PVDD_X to GND_X (2) OUT_X to GND_X (2) –0.3 to 53 V –0.3 to 66.2 V BST_X to GVDD_X (2) –0.3 to 53 V VREG to GND –0.3 to 4.2 V GND_X to GND –0.3 to 0.3 V GND to AGND –0.3 to 0.3 V OC_ADJ, M1, M2, M3, OSC_IO+, OSC_IO–, FREQ_ADJ, VI_CM, C_STARTUP, PSU_REF to GND –0.3 to 4.2 V INPUT_X –0.3 to 7 V RESET, SD, OTW1, OTW2, CLIP, READY to GND –0.3 to 7 V BST_X to GND_X (2) Continuous sink current (SD, OTW1, OTW2, CLIP, READY) Operating junction temperature range, TJ Storage temperature, Tstg Electrostatic discharge (1) (2) (3) Human-Body Model (3) (all pins) Charged-Device Model (3) (all pins) 9 mA 0 to 150 °C –40 to 150 °C ±2 kV ±500 V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. These voltages represents the DC voltage + peak AC waveform measured at the terminal of the device in all conditions. Failure to follow good anti-static ESD handling during manufacture and rework will contribute to device malfunction. Make sure the operators handling the device are adequately grounded through the use of ground straps or alternative ESD protection. RECOMMENDED OPERATING CONDITIONS over operating free-air temperature range (unless otherwise noted) MIN TYP MAX PVDD_x Half-bridge supply DC supply voltage 18 36 38 V GVDD_x Supply for logic regulators and gate-drive circuitry DC supply voltage 10.8 12 13.2 V VDD Digital regulator supply voltage DC supply voltage 10.8 12 13.2 V 3.5 4 2.8 3 1.6 2 2.8 3 7 10 7 15 7 10 Nominal 350 400 450 AM1 300 340 380 AM2 260 300 335 RL(BTL) RL(SE) Output filter according to Figure 12 and Figure 13 Load impedance RL(PBTL) RL (BTL) Load impedance Output filter according to Figure 12 + Schottky, ROC = 22kΩ Output filter inductance Minimum output inductance at IOC LOUT(BTL) LOUT(SE) LOUT(PBTL) PWM frame rate selectable for AM interference avoidance; 1% Resistor tolerance FPWM Nominal; Master mode RFREQ_ADJ PWM frame rate programming resistor CPVDD PVDD close decoupling capacitors ROC Over-current programming resistor 4 Ω Ω μH 9.5 10 10.5 AM1; Master mode 19.8 20 20.2 AM2; Master mode 29.7 30 30.3 Resistor tolerance = 5% Submit Documentation Feedback 22 UNIT kHz kΩ 2.0 μF 30 kΩ Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TAS5613 TAS5613 www.ti.com SLAS676 – NOVEMBER 2009 RECOMMENDED OPERATING CONDITIONS (continued) over operating free-air temperature range (unless otherwise noted) ROC_LATCHED Over-current programming resistor Resistor tolerance = 5% VFREQ_ADJ Voltage on FREQ_ADJ pin for slave mode operation Slave mode TJ Junction temperature MIN TYP 47 64 kΩ 3.3 V 0 MAX 150 UNIT °C PIN FUNCTIONS PIN NAME FUNCTION (1) DESCRIPTION PHD NO. DKD NO. AGND 8 10 P Analog ground BST_A 54 43 P HS bootstrap supply (BST), external 0.033 μF capacitor to OUT_A required. BST_B 41 34 P HS bootstrap supply (BST), external 0.033 μF capacitor to OUT_B required. BST_C 40 33 P HS bootstrap supply (BST), external 0.033 μF capacitor to OUT_C required. BST_D 27 24 P HS bootstrap supply (BST), external 0.033 μF capacitor to OUT_D required. CLIP 18 – O Clipping warning; open drain; active low C_STARTUP 3 5 O Startup ramp requires a charging capacitor of 4.7nF to GND FREQ_ADJ 12 14 I PWM frame rate programming pin requires resistor to GND 7, 23, 24, 57, 58 9 P Ground GND_A 48, 49 38 P Power ground for half-bridge A GND_B 46, 47 37 P Power ground for half-bridge B GND_C 34, 35 30 P Power ground for half-bridge C GND_D 32, 33 29 P Power ground for half-bridge D GVDD_A 55 – P Gate drive voltage supply requires 0.1 μF capacitor to GND_A GVDD_B 56 – P Gate drive voltage supply requires 0.1 μF capacitor to GND_B GVDD_C 25 – P Gate drive voltage supply requires 0.1 μF capacitor to GND_C GVDD_D 26 - P Gate drive voltage supply requires 0.1 uF capacitor to GND_D GVDD_AB – 44 P Gate drive voltage supply requires 0.22 μF capacitor to GND_A/GND_B GVDD_CD – 23 P Gate drive voltage supply requires 0.22 μF capacitor to GND_C/GND_D INPUT_A 4 6 I Input signal for half bridge A INPUT_B 5 7 I Input signal for half bridge B INPUT_C 10 12 I Input signal for half bridge C INPUT_D 11 13 I Input signal for half bridge D M1 20 20 I Mode selection M2 21 21 I Mode selection M3 22 22 I Mode selection NC 59-62 – – No connect, pins may be grounded. OC_ADJ 1 3 O Analog over current programming pin requires 30kΩ resistor to ground: OSC_IO+ 13 15 I/O Oscillator master/slave output/input. OSC_IO– 14 16 I/O Oscillator master/slave output/input. /OTW - 18 O Overtemperature warning signal, open drain, active low. OTW1 16 – O Overtemperature warning signal, open drain, active low. OTW2 17 – O Overtemperature warning signal, open drain, active low. OUT_A 52, 53 39, 40 O Output, half bridge A OUT_B 44, 45 36 O Output, half bridge B OUT_C 36, 37 31 O Output, half bridge C OUT_D 28, 29 27, 28 O Output, half bridge D 63 1 P PSU Reference requires close decoupling of 330pF to GND 50, 51 41, 42 P Power supply input for half bridges A requires close decoupling of 2μF capacitor to GND_A. GND PSU_REF PVDD_A (1) I = Input, O = Output, P = Power Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TAS5613 5 TAS5613 SLAS676 – NOVEMBER 2009 www.ti.com PIN FUNCTIONS (continued) PIN NAME FUNCTION (1) DESCRIPTION PHD NO. DKD NO. PVDD_B 42, 43 35 P Power supply input for half bridges B requires close decoupling of 2μF capacitor to GND_B. PVDD_C 38, 39 32 P Power supply input for half bridges C requires close decoupling of 2μF capacitor to GND_C. PVDD_D 30, 31 25, 26 P Power supply input for half bridges D requires close decoupling of 2μF capacitor to GND_D. 19 19 O Normal operation; open drain; active high READY RESET 2 4 I Device reset Input; active low, requires 47kΩ pull up resistor to VREG SD 15 17 O Shutdown signal, open drain, active low VDD 64 2 P Power supply for internal voltage regulator requires a 10-μF capacitor with a 0.1-μF capacitor to GND for decoupling. VI_CM 6 8 O Analog comparator reference node requires close decoupling of 1nF to GND VREG 9 11 P Internal regulator supply filter pin requires 0.1-μF capacitor to GND 6 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TAS5613 TAS5613 www.ti.com SLAS676 – NOVEMBER 2009 TYPICAL SYSTEM BLOCK DIAGRAM ANALOG_IN_B OSC_IO- BST_A VI_CM CLIP READY BST_B OUT_A INPUT_A Input DC Blocking Caps ANALOG_IN_A OSC_IO+ C_STARTUP Oscillator Synchronization OTW1, OTW2, OTW SD RESET (2) PSU_REF Caps for External Filtering & Startup/Stop System microcontroller or Analog circuitry Input H-Bridge 1 INPUT_B Output H-Bridge 1 2 OUT_B 2 Hardwire PWM Frame Rate Adjust & Master/Slave Mode ANALOG_IN_D OUT_C Input H-Bridge 2 INPUT_D Output H-Bridge 2 2 OUT_D 8 PVDD 36V PVDD Power Supply Decoupling SYSTEM Power Supplies OC_ADJ AGND VDD VREG BST_D Bootstrap Caps 4 GVDD, VDD, & VREG Power Supply Decoupling Hardwire OverCurrent Limit GND GND 12V 8 2nd Order L-C Output Filter for each H-Bridge BST_C GND M3 GVDD_A, B, C, D M2 GND_A, B, C, D M1 PVDD_A, B, C, D 2 Hardwire Mode Control 2nd Order L-C Output Filter for each H-Bridge 2-CHANNEL H-BRIDGE BTL MODE INPUT_C Input DC Blocking Caps ANALOG_IN_C FREQ_ADJ Bootstrap Caps GVDD (12V)/VDD (12V) VAC Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TAS5613 7 TAS5613 SLAS676 – NOVEMBER 2009 www.ti.com FUNCTIONAL BLOCK DIAGRAM CLIP READY OTW1 OTW2 SD PROTECTION & I/O LOGIC M1 M2 M3 RESET C_STARTUP STARTUP CONTROL VDD POWER-UP RESET UVP VREG VREG AGND TEMP SENSE GVDD_A GVDD_C GVDD_B OVER-LOAD PROTECTION GND GVDD_D CURRENT SENSE CB3C OC_ADJ OSC_SYNC_IO+ OSC_SYNC_IO- 4 OSCILLATOR PPSC 4 4 FREQ_ADJ PVDD_X OUT_X GND_X GVDD_A PSU_REF PWM ACTIVITY DETECTOR PVDD_X PSU_FF GND VI_CM BST_A PVDD_A PWM RECEIVER CONTROL TIMING CONTROL GATE-DRIVE OUT_A GND_A GVDD_B INPUT_A - ANALOG LOOP FILTER BST_B + PVDD_B INPUT_D ANALOG LOOP FILTER ANALOG LOOP FILTER - + ANALOG COMPARATOR MUX INPUT_C ANALOG LOOP FILTER ANALOG INPUT MUX INPUT_B PWM RECEIVER + CONTROL TIMING CONTROL GATE-DRIVE OUT_B GND_B GVDD_C BST_C PVDD_C PWM RECEIVER CONTROL TIMING CONTROL GATE-DRIVE + OUT_C GND_C - GVDD_D BST_D PVDD_D PWM RECEIVER CONTROL TIMING CONTROL GATE-DRIVE OUT_D GND_D 8 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TAS5613 TAS5613 www.ti.com SLAS676 – NOVEMBER 2009 AUDIO CHARACTERISTICS (BTL) PCB and system configuration are in accordance with recommended guidelines. Audio frequency = 1kHz, PVDD_X = 36V, GVDD_X = 12V, RL = 4Ω, fS = 400kHz, ROC = 30kΩ, TC = 75°C, Output Filter: LDEM = 7μH, CDEM = 680nF, mode = 010, unless otherwise noted. PARAMETER PO TEST CONDITIONS Power output per channel MIN TYP MAX RL = 3Ω, 10% THD+N (ROC = 22kΩ, add Schottky diodes from OUT_X to GND_X) 200 RL = 4Ω, 10% THD+N 150 RL = 3Ω, 1% THD+N (ROC = 22kΩ, add Schottky diodes from OUT_X to GND_X) 160 RL = 4Ω, 1% THD+N UNIT W 125 THD+N Total harmonic distortion + noise 1W Vn Output integrated noise A-weighted, AES17 filter, Input Capacitor Grounded |VOS| Output offset voltage Inputs AC coupled to GND SNR Signal-to-noise ratio (1) 100 dB DNR Dynamic range 100 dB 1.8 W Pidle (1) (2) Power dissipation due to Idle losses (IPVDD_X) 0.03% PO = 0, 4 channels switching μV 185 20 (2) 50 mV SNR is calculated relative to 1% THD+N output level. Actual system idle losses also are affected by core losses of output inductors. AUDIO CHARACTERISTICS (PBTL) PCB and system configuration are in accordance with recommended guidelines. Audio frequency = 1kHz, PVDD_X = 36V, GVDD_X = 12V, RL = 2Ω, fS = 400 kHz, ROC = 30kΩ, TC = 75°C, Output Filter: LDEM = 7μH, CDEM = 680nF, MODE = 101-BD, unless otherwise noted. PARAMETER PO TEST CONDITIONS Power output per channel MIN TYP MAX RL = 2Ω, 10% THD+N 300 RL = 3Ω, 10% THD+N 200 RL = 4Ω, 10% THD+N 160 RL = 2Ω, 1% THD+N 250 RL = 3Ω, 1% THD+N 160 RL = 4Ω, 1% THD+N UNIT W 130 THD+N Total harmonic distortion + noise 1W Vn Output integrated noise A-weighted 182 μV SNR Signal to noise ratio (1) A-weighted 100 dB DNR Dynamic range A-weighted 100 dB 1.8 W Pidle (1) (2) 0.05% Power dissipation due to idle losses (IPVDD_X) PO = 0, 4 channels switching (2) SNR is calculated relative to 1% THD+N output level. Actual system idle losses are affected by core losses of output inductors. ELECTRICAL CHARACTERISTICS PVDD_X = 36V, GVDD_X = 12V, VDD = 12V, TC (Case temperature) = 75°C, fS = 400kHz, unless otherwise specified. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INTERNAL VOLTAGE REGULATOR AND CURRENT CONSUMPTION VREG Voltage regulator, only used as reference node VDD = 12V Analog comparator reference node, VI_CM IVDD VDD supply current IGVDD_x Gate-supply current per half-bridge 3 3.3 3.6 V 1.5 1.75 1.9 V Operating, 50% duty cycle 20 Idle, reset mode 20 50% duty cycle 10 Reset mode 1.5 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TAS5613 mA mA 9 TAS5613 SLAS676 – NOVEMBER 2009 www.ti.com ELECTRICAL CHARACTERISTICS (continued) PVDD_X = 36V, GVDD_X = 12V, VDD = 12V, TC (Case temperature) = 75°C, fS = 400kHz, unless otherwise specified. PARAMETER IPVDD_x TEST CONDITIONS Half-bridge idle current MIN TYP MAX UNIT 50% duty cycle with recommended output filter 12.5 mA Reset mode, No switching 620 μA 33 kΩ ANALOG INPUTS RIN Input resistance VIN Maximum input voltage swing IIN Maximum input current G Inverting voltage Gain, (VOUT/VIN) READY = HIGH 7 V 1 21 mA dB OSCILLATOR Nominal, Master Mode fOSC_IO+ AM1, Master Mode FPWM × 10 AM2, Master Mode VIH High level input voltage VIL Low level input voltage 3.5 4 4.5 3.0 3.4 3.8 2.6 3 3.35 1.86 MHz V 1.45 V 60 100 mΩ 60 100 mΩ OUTPUT-STAGE MOSFETs Drain-to-source resistance, low side (LS) TJ = 25°C, Includes metallization resistance, Drain-to-source resistance, high side (HS) GVDD = 12V RDS(on) I/O PROTECTION Undervoltage protection limit, GVDD_x and VDD Vuvp,G Vuvp,hyst (1) OTW OTWHYST OTE (1) OTEHYST (1) OLPC (1) 95 100 105 °C (1) 115 125 135 °C 25 145 155 °C 165 °C OTE-OTW differential 30 °C A reset needs to occur for SD to be released following an OTE event 25 °C fPWM = 400kHz 2.6 ms Resistor – programmable, nominal peak current in 1Ω load, ROCP = 30kΩ 14 Resistor – programmable, nominal peak current in 1Ω load, ROCP = 22kΩ (with Schottky diodes on output nodes) 18 Resistor – programmable, peak current in 1Ω load, ROCP = 64kΩ 14 Resistor – programmable, nominal peak current in 1Ω load, ROCP = 47kΩ (with Schottky diodes on output nodes) 18 Overcurrent limit protection IOC_LATCHED V Overtemperature warning 2, OTW2 Overload protection counter IOC 0.6 Overtemperature warning 1, OTW1 Overtemperature error OTEOTWdifferential V (1) Temperature drop needed below OTW temperature for OTW to be inactive after OTW event. (1) 9.5 Overcurrent limit protection IOCT Overcurrent response time Time from switching transition to flip-state induced by overcurrent. IPD Output pulldown current of each half Connected when RESET is active to provide bootstrap charge. Not used in SE mode. A A 150 ns 3 mA STATIC DIGITAL SPECIFICATIONS VIH High level input voltage VIL Low level input voltage Leakage Input leakage current (1) 10 INPUT_X, M1, M2, M3, RESET 1.9 V 0.8 V 100 μA Specified by design. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TAS5613 TAS5613 www.ti.com SLAS676 – NOVEMBER 2009 ELECTRICAL CHARACTERISTICS (continued) PVDD_X = 36V, GVDD_X = 12V, VDD = 12V, TC (Case temperature) = 75°C, fS = 400kHz, unless otherwise specified. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT OTW/SHUTDOWN (SD) RINT_PU Internal pullup resistance, OTW1 to VREG, OTW2 to VREG, SD to VREG VOH High level output voltage VOL Low level output voltage IO = 4 mA FANOUT Device fanout OTW1, OTW2, SD, CLIP, READY No external pullup Internal pullup resistor External pullup of 4.7kΩ to 5V 20 26 32 3 3.3 3.6 4.5 kΩ V 5 200 30 500 mV devices Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TAS5613 11 TAS5613 SLAS676 – NOVEMBER 2009 www.ti.com TYPICAL CHARACTERISTICS, BTL CONFIGURATION TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER OUTPUT POWER vs SUPPLY VOLTAGE 250 TC = 75°C TC = 75°C, THD+N = 10% 3W 200 1 PO - Output Power - W THD+N - Total Harmonic Distortion + Noise - % 10 3W 4W 0.1 6W 8W 4W 6W 150 8W 100 0.01 50 0 0.001 0.01 0.1 10 1 PO - Output Power - W 1000 100 20 22 24 26 28 30 32 PVDD - Supply Voltage - V Figure 1. Figure 2. UNCLIPPED OUTPUT POWER vs SUPPLY VOLTAGE SYSTEM EFFICIENCY vs OUTPUT POWER TC = 75°C 36 90 80 3W 150 Efficiency - % 6W 8W 100 8W 6W 4W 70 4W 60 50 40 30 50 20 TC = 25°C THD+N = 10% 10 0 18 0 20 22 24 26 28 30 32 PVDD - Supply Voltage - V 34 36 0 Figure 3. 12 34 100 200 PO - Output Power - W 18 50 100 150 200 250 300 350 2 Channel Output Power - W 400 Figure 4. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TAS5613 TAS5613 www.ti.com SLAS676 – NOVEMBER 2009 TYPICAL CHARACTERISTICS, BTL CONFIGURATION (continued) SYSTEM POWER LOSS vs OUTPUT POWER OUTPUT POWER vs CASE TEMPERATURE 30 250 THD+N = 10% TC = 25°C THD+N = 10% 3W 4W PO - Output Power - W Powr Loss - W 200 20 6W 10 0 50 100 150 200 250 300 350 2 Channel Output Power - W 6W 8W 100 0 20 400 30 40 50 60 70 80 TC - Case Temperature - °C 90 Figure 5. Figure 6. NOISE AMPLITUDE vs FREQUENCY TOTAL HARMONIC DISTORTION+NOISE vs FREQUENCY 0 100 10 -40 THD+N - Total Harmonic Distortion - % TC = 75°C, VREF = 25.46 V, Sample Rate = 48 kHz, FFT size = 16384 -20 Noise Amplitude - dB 150 50 8W 0 4W -60 -80 -100 -120 4W -140 RL = 4 W, TC = 75°C, Toroidal Output Inductors 1 0.1 1W 0.01 21 W (1/8 Power) -160 0 5 10 15 f - Frequency - kHz 20 0.001 10 Figure 7. 100 1k 10k f - Frequency - Hz 100k Figure 8. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TAS5613 13 TAS5613 SLAS676 – NOVEMBER 2009 www.ti.com TYPICAL CHARACTERISTICS, PBTL CONFIGURATION TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER OUTPUT POWER vs SUPPLY VOLTAGE 350 TC = 75°C TC = 75°C, THD+N = 10% 2W 3W 300 2W 4W 1 6W PO - Output Power - W THD+N - Total Harmonic Distortion + Noise - % 10 8W 0.1 3W 250 4W 200 6W 8W 150 100 0.01 50 0.001 0.01 0.1 10 1 100 PO - Output Power - W 1000 0 18 20 22 Figure 9. 24 26 28 30 32 PVDD - Supply Voltage - V 34 36 Figure 10. OUTPUT POWER vs CASE TEMPERATURE 400 THD+N = 10% 2W 350 PO - Output Power - W 300 250 3W 200 4W 150 6W 100 8W 50 0 20 14 30 40 50 60 70 80 TC - Case Temperature - °C Figure 11. Submit Documentation Feedback 90 100 Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TAS5613 TAS5613 www.ti.com SLAS676 – NOVEMBER 2009 APPLICATION INFORMATION PCB MATERIAL RECOMMENDATION FR-4 Glass Epoxy material with 2 oz. (70μm) is recommended for use with the TAS5613. The use of this material can provide for higher power output, improved thermal performance, and better EMI margin (due to lower PCB trace inductance. PVDD CAPACITOR RECOMMENDATION The large capacitors used in conjunction with each full-bridge, are referred to as the PVDD Capacitors. These capacitors should be selected for proper voltage margin and adequate capacitance to support the power requirements. In practice, with a well designed system power supply, 1000 μF, 50V will support more applications. The PVDD capacitors should be low ESR type because they are used in a circuit associated with high-speed switching. DECOUPLING CAPACITOR RECOMMENDATIONS In order to design an amplifier that has robust performance, passes regulatory requirements, and exhibits good audio performance, good quality decoupling capacitors should be used. In practice, X7R should be used in this application. The voltage of the decoupling capacitors should be selected in accordance with good design practices. Temperature, ripple current, and voltage overshoot must be considered. This fact is particularly true in the selection of the 2μF that is placed on the power supply to each half-bridge. It must withstand the voltage overshoot of the PWM switching, the heat generated by the amplifier during high power output, and the ripple current created by high power output. A minimum voltage rating of 50V is required for use with a 36V power supply. SYSTEM DESIGN RECOMMENDATIONS The following schematics and PCB layouts illustrate best practices in the use of the TAS5613. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TAS5613 15 R_RIGHT_N IN_RIGHT_P IN_LEFT_N IN_LEFT_P /RESET 10uF C16 10uF C14 10uF C12 10uF C10 C17 100pF C15 100pF C13 100pF C11 100pF C18 100pF READY /CLIP /OTW2 /OTW1 /SD OSC_IO- OSC_IO+ 100R R13 100R R12 100R R11 100R R10 100R R18 GND VREG GND R19 47k GND GND GND GND GND 10k R21 100nF C22 R20 VREG 1nF C21 4.7nF C20 30.0 kW GND 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 GND /OTW1 /SD OSC_IO- OSC_IO+ FREQ_ADJ INPUT_D INPUT_C VREG AGND GND VI_CM INPUT_B INPUT_A C_STARTUP /RESET OC_ADJ GND C26 100nF C30 100nF GND 3.3R 61 C23 330pF C25 10uF 64 VDD 63 18 /OTW2 17 PSU_REF /CLIP 62 NC READY 19 GND C31 100nF 59 VREG C33 100nF GND GND GND C32 100nF TAS5613PHD U10 GND 60 NC M1 20 NC 21 NC M3 22 M2 57 GND 58 GND GND 23 Product Folder Link(s): TAS5613 24 Submit Documentation Feedback 25 GVDD_C R31 C40 33nF C60 2.0 uF 3.3R 3.3R R33 R32 C43 33nF 26 3.3R GVDD_D 54 27 53 BST_A BST_D 56 GVDD_B 55 GVDD_A OUT_A OUT_D 28 52 OUT_A OUT_D 29 51 PVDD_A PVDD_D 30 50 PVDD_A PVDD_D 49 GND_A GND_D 31 16 C63 2.0 uF 32 R30 GND_D GND_C GND_C OUT_C OUT_C PVDD_C PVDD_C BST_C BST_B PVDD_B PVDD_B OUT_B OUT_B GND_B GND_B GND_A GND 48 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 GND C62 2.0 uF C61 2.0 uF GND L13 7 uH 7 uH L12 C42 33nF C41 33nF 7 uH L11 L10 7 uH 1000uF C65 C53 680nF C52 680nF GND C51 680nF C50 680nF C72 1nF GND C73 1nF GND 1000uF C66 C71 1nF GND C70 1nF R73 3.3R C77 10nF C76 10nF R72 3.3R GND GND GND C68 47uF 63V R71 3.3R C75 10nF C74 10nF R70 3.3R C67 1000uF GND GND C69 2.2uF GND C64 1000uF GND PVDD GND PVDD GVDD/VDD (+12V) OUT_RIGHT_P + - GND OUT_RIGHT_M C78 10nF R74 3.3R OUT_LEFT_P + - OUT_LEFT_M PVDD GVDD/VDD (+12V) TAS5613 SLAS676 – NOVEMBER 2009 www.ti.com Figure 12. Typical Differential Input BTL Application With BD Modulation Filters Copyright © 2009, Texas Instruments Incorporated READY /CLIP /OTW2 /OTW1 /SD OSC_IO- OSC_IO+ IN_N IN_P /RESET 10uF 10uF 100R 100R 100R GND GND GND 100pF 100pF 100pF GND VREG 47k GND GND GND GND GND 10k 100nF VREG 1nF 4.7nF 30.0 kW GND GND 1 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 /OTW1 /SD OSC_IO- OSC_IO+ FREQ_ADJ INPUT_D INPUT_C VREG AGND GND VI_CM INPUT_B INPUT_A C_STARTUP /RESET OC_ADJ 330pF GND GND GND GND GND GND 100nF VREG GND GND GND 100nF TAS5613PHD 3.3R 3.3R 33nF GVDD_D 26 VREG 33nF 27 100nF BST_A BST_D 54 28 100nF 59 3.3R 53 OUT_A OUT_D 100nF 55 GVDD_A 3.3R 52 OUT_A OUT_D 29 51 PVDD_A PVDD_D 30 50 PVDD_A PVDD_D 31 10uF 64 VDD /OTW2 17 63 PSU_REF /CLIP 18 60 61 62 NC READY 19 NC 20 M1 21 NC M3 22 NC 58 GND GND 23 M2 56 GVDD_B GVDD_C 49 GND_A GND_D 57 GND GND 24 Product Folder Link(s): TAS5613 25 Copyright © 2009, Texas Instruments Incorporated 32 VDD (+12V) 2.0 uF GND_D GND_C GND_C OUT_C OUT_C PVDD_C PVDD_C BST_C BST_B PVDD_B PVDD_B OUT_B OUT_B GND_B GND_B GND_A GND 2.0 uF 48 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 GND 2.0 uF 2.0 uF GND 33nF 33nF 7 uH 7 uH 7 uH 7 uH 1000uF 1000uF 680nF GND 680nF 1000uF 63V 1000uF GND GND 1nF 1nF GND GND 47uF GND 3.3R 10nF 10nF 3.3R GND + OUT_LEFT_P GND OUT_LEFT_M 10nF 3.3R GND 2.2uF GVDD (+12V) PVDD PVDD GVDD (+12V) TAS5613 www.ti.com SLAS676 – NOVEMBER 2009 Figure 13. Typical Differential (2N) PBTL Application With BD Modulation Filters Submit Documentation Feedback 17 TAS5613 SLAS676 – NOVEMBER 2009 www.ti.com THEORY OF OPERATION POWER SUPPLIES To facilitate system design, the TAS5613 needs only a 12V supply in addition to the (typical) 36V power-stage supply. An internal voltage regulator provides suitable voltage levels for the digital and low-voltage analog circuitry. Additionally, all circuitry requiring a floating voltage supply, e.g., the high-side gate drive, is accommodated by built-in bootstrap circuitry requiring only an external capacitor for each half-bridge. In order to provide outstanding electrical and acoustical characteristics, the PWM signal path including gate drive and output stage is designed as identical, independent half-bridges. For this reason, each half-bridge has separate gate drive supply (GVDD_X), bootstrap pins (BST_X), and power-stage supply pins (PVDD_X). Furthermore, an additional pin (VDD) is provided as supply for all common circuits. Although supplied from the same 12V source, separating to GVDD_A, GVDD_B, GVDD_C, GVDD_D, and VDD on the printed-circuit board (PCB) by RC filters (see application diagram for details) is recommended. These RC filters provide the recommended high-frequency isolation. Special attention should be paid to placing all decoupling capacitors as close to their associated pins as possible. In general, inductance between the power supply pins and decoupling capacitors must be avoided. (See reference board documentation for additional information.) For a properly functioning bootstrap circuit, a small ceramic capacitor must be connected from each bootstrap pin (BST_X) to the power-stage output pin (OUT_X). When the power-stage output is low, the bootstrap capacitor is charged through an internal diode connected between the gate-drive power-supply pin (GVDD_X) and the bootstrap pin. When the power-stage output is high, the bootstrap capacitor potential is shifted above the output potential and thus provides a suitable voltage supply for the high-side gate driver. In an application with PWM switching frequencies in the range from 300kHz to 400kHz, it is recommended to use 33nF ceramic capacitors, size 0603 or 0805, for the bootstrap supply. These 33nF capacitors ensure sufficient energy storage, even during minimal PWM duty cycles, to keep the high-side power stage FET (LDMOS) fully turned on during the remaining part of the PWM cycle. Special attention should be paid to the power-stage power supply; this includes component selection, PCB placement, and routing. As indicated, each half-bridge has independent power-stage supply pins (PVDD_X). For optimal electrical performance, EMI compliance, and system reliability, it is important that each PVDD_X pin is decoupled with a 2-μF ceramic capacitor placed as close as possible to each supply pin. It is recommended to follow the PCB layout of the TAS5613 reference design. For additional information on recommended power supply and required components, see the application diagrams in this data sheet. The 12V supply should be from a low-noise, low-output-impedance voltage regulator. Likewise, the 36V power-stage supply is assumed to have low output impedance and low noise. The power-supply sequence is not critical as facilitated by the internal power-on-reset circuit. Moreover, the TAS5613 is fully protected against erroneous power-stage turn on due to parasitic gate charging. Thus, voltage-supply ramp rates (dV/dt) are non-critical within the specified range (see the Recommended Operating Conditions table of this data sheet). SYSTEM POWER-UP/POWER-DOWN SEQUENCE Powering Up The TAS5613 does not require a power-up sequence. The outputs of the H-bridges remain in a high-impedance state until the gate-drive supply voltage (GVDD_X) and VDD voltage are above the undervoltage protection (UVP) voltage threshold (see the Electrical Characteristics table of this data sheet). Although not specifically required, it is recommended to hold RESET in a low state while powering up the device. This allows an internal circuit to charge the external bootstrap capacitors by enabling a weak pulldown of the half-bridge output. Powering Down The TAS5613 does not require a power-down sequence. The device remains fully operational as long as the gate-drive supply (GVDD_X) voltage and VDD voltage are above the undervoltage protection (UVP) voltage threshold (see the Electrical Characteristics table of this data sheet). Although not specifically required, it is a good practice to hold RESET low during power down, thus preventing audible artifacts including pops or clicks. 18 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TAS5613 TAS5613 www.ti.com SLAS676 – NOVEMBER 2009 ERROR REPORTING The SD, OTW, OTW1 and OTW2 pins are active-low, open-drain outputs. The function is for protection-mode signaling to a PWM controller or other system-control device. Any fault resulting in device shutdown is signaled by the SD pin going low. Also, OTW and OTW2 go low when the device junction temperature exceeds 125°C, and OTW1 goes low when the junction temperature exceeds 100°C (seeTable 2). Table 2. Error Reporting SD OTW1 0 0 OTW2, OTW DESCRIPTION 0 Overtemperature (OTE) or overload (OLP) or undervoltage (UVP) Junction temperature higher than 125°C (overtemperature warning) 0 0 1 Overload (OLP) or undervoltage (UVP). Junction temperature higher than 100°C (overtemperature warning) 0 1 1 Overload (OLP) or undervoltage (UVP). Junction temperature lower than 100°C 1 0 0 Junction temperature higher than 125°C (overtemperature warning) 1 0 1 Junction temperature higher than 100°C (overtemperature warning) 1 1 1 Junction temperature lower than 100°C and no OLP or UVP faults (normal operation) Note that asserting either RESET low forces the SD signal high, independent of faults being present. TI recommends monitoring the OTW signal using the system microcontroller and responding to an overtemperature warning signal by, e.g., turning down the volume to prevent further heating of the device resulting in device shutdown (OTE). To reduce external component count, an internal pullup resistor to 3.3V is provided on both SD and OTW outputs. Level compliance for 5V logic can be obtained by adding external pullup resistors to 5 V (see the Electrical Characteristics section of this data sheet for further specifications). DEVICE PROTECTION SYSTEM The TAS5613 contains advanced protection circuitry carefully designed to facilitate system integration and ease of use, as well as to safeguard the device from permanent failure due to a wide range of fault conditions such as short circuits, overload, overtemperature, and undervoltage. The TAS5613 responds to a fault by immediately setting the power stage in a high-impedance (Hi-Z) state and asserting the SD pin low. In situations other than overload and overtemperature error (OTE), the device automatically recovers when the fault condition has been removed, i.e., the supply voltage has increased. The device will function on errors, as shown in Table 3. Table 3. Device Protection BTL LOCAL ERROR IN A B C D MODE PBTL TURNS OFF LOCAL ERROR IN A+B C+D MODE SE MODE TURNS OFF LOCAL ERROR IN TURNS OFF A B C A A+B+C+D D B C D A+B C+D Bootstrap UVP does not shutdown according to the table, it shuts down the respective halfbridge. PIN-TO-PIN SHORT CIRCUIT PROTECTION (PPSC) The PPSC detection system protects the device from permanent damage in the case that a power output pin (OUT_X) is shorted to GND_X or PVDD_X. For comparison, the OC protection system detects an overcurrent after the demodulation filter where PPSC detects shorts directly at the pin before the filter. PPSC detection is performed at startup i.e. when VDD is supplied, consequently a short to either GND_X or PVDD_X after system startup will not activate the PPSC detection system. When PPSC detection is activated by a short on the output, all half bridges are kept in a Hi-Z state until the short is removed, the device then continues the startup sequence and starts switching. The detection is controlled globally by a two step sequence. The first step ensures that Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TAS5613 19 TAS5613 SLAS676 – NOVEMBER 2009 www.ti.com there are no shorts from OUT_X to GND_X, the second step tests that there are no shorts from OUT_X to PVDD_X. The total duration of this process is roughly proportional to the capacitance of the output LC filter. The typical duration is < 15ms/μF. While the PPSC detection is in progress, SD is kept low, and the device will not react to changes applied to the RESET pins. If no shorts are present the PPSC detection passes, and SD is released. A device reset will not start a new PPSC detection. PPSC detection is enabled in BTL and PBTL output configurations, the detection is not performed in SE mode. To make sure not to trip the PPSC detection system it is recommended not to insert resistive load to GND_X or PVDD_X. OVERTEMPERATURE PROTECTION The two different package options has individual over temperature protection schemes. PHD Package The TAS5613 PHD package option has a three-level temperature-protection system that asserts an active-low warning signal (OTW1) when the device junction temperature exceeds 100°C (typical), (OTW2) when the device junction temperature exceeds 125°C (typical) and, if the device junction temperature exceeds 155°C (typical), the device is put into thermal shutdown, resulting in all half-bridge outputs being set in the high-impedance (Hi-Z) state and SD being asserted low. OTE is latched in this case. To clear the OTE latch, RESET must be asserted. Thereafter, the device resumes normal operation. DKD Package The TAS5613 DKD package option has a two-level temperature-protection system that asserts an active-low warning signal (OTW) when the device junction temperature exceeds 125°C (typical) and, if the device junction temperature exceeds 155°C (typical), the device is put into thermal shutdown, resulting in all half-bridge outputs being set in the high-impedance (Hi-Z) state and SD being asserted low. OTE is latched in this case. To clear the OTE latch, RESET must be asserted. Thereafter, the device resumes normal operation. UNDERVOLTAGE PROTECTION (UVP) AND POWER-ON RESET (POR) The UVP and POR circuits of the TAS5613 fully protect the device in any power-up/down and brownout situation. While powering up, the POR circuit resets the overload circuit (OLP) and ensures that all circuits are fully operational when the GVDD_X and VDD supply voltages reach stated in the Electrical Characteristics table. Although GVDD_X and VDD are independently monitored, a supply voltage drop below the UVP threshold on any VDD or GVDD_X pin results in all half-bridge outputs immediately being set in the high-impedance (Hi-Z) state and SD being asserted low. The device automatically resumes operation when all supply voltages have increased above the UVP threshold. DEVICE RESET When RESET is asserted low, all power-stage FETs in the four half-bridges are forced into a high-impedance (Hi-Z) state. In BTL modes, to accommodate bootstrap charging prior to switching start, asserting the reset input low enables weak pulldown of the half-bridge outputs. In the SE mode, the output is forced into a high impedance state when asserting the reset input low. Asserting reset input low removes any fault information to be signalled on the SD output, i.e., SD is forced high. A rising-edge transition on reset input allows the device to resume operation after an overload fault. To ensure thermal reliability, the rising edge of reset must occur no sooner than 4 ms after the falling edge of SD. SYSTEM DESIGN CONSIDERATION A rising-edge transition on reset input allows the device to execute the startup sequence and starts switching. Apply only audio when the state of READY is high that will start and stop the amplifier without having audible artifacts that is heard in the output transducers. The CLIP signal is indicating that the output is approaching clipping. The signal can be used to either an audio volume decrease or intelligent power supply controlling a low and a high rail. The device is inverting the audio signal from input to output. 20 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TAS5613 TAS5613 www.ti.com SLAS676 – NOVEMBER 2009 The VREG pin is not recommended to be used as a voltage source for external circuitry. OSCILLATOR The oscillator frequency can be trimmed by external control of the FREQ_ADJ pin. To reduce interference problems while using radio receiver tuned within the AM band, the switching frequency can be changed from nominal to lower values. These values should be chosen such that the nominal and the lower value switching frequencies together results in the fewest cases of interference throughout the AM band. can be selected by the value of the FREQ_ADJ resistor connected to AGND in master mode. For slave mode operation, turn of the oscillator by pulling the FREQ_ADJ pin to VREG. This configures the OSC_I/O pins as inputs and needs to be slaved from an external differential clock. PRINTED CIRCUIT BOARD RECOMMENDATION Use an unbroken ground plane to have good low impedance and inductance return path to the power supply for power and audio signals. PCB layout, audio performance and EMI are linked closely together. The circuit contains high fast switching currents; therefore, care must be taken to prevent damaging voltage spikes. Routing the audio input should be kept short and together with the accompanied audio source ground. A local ground area underneath the device is important to keep solid to minimize ground bounce. Netlist for this printed circuit board is generated from the schematic in Figure 12. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TAS5613 21 TAS5613 SLAS676 – NOVEMBER 2009 www.ti.com Note T1: PVDD decoupling bulk capacitors C60-C64 should be as close as possible to the PVDD and GND_X pins, the heat sink sets the distance. Wide traces should be routed on the top layer with direct connection to the pins and without going through vias. No vias or traces should be blocking the current path. Note T2: Close decoupling of PVDD with low impedance X7R ceramic capacitors is placed under the heat sink and close to the pins. Note T3: Heat sink needs to have a good connection to PCB ground. Note T4: Output filter capacitors must be linear in the applied voltage range preferable metal film types. Figure 14. Printed Circuit Board - Top Layer 22 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TAS5613 TAS5613 www.ti.com SLAS676 – NOVEMBER 2009 Note B1: It is important to have a direct low impedance return path for high current back to the power supply. Keep impedance low from top to bottom side of PCB through a lot of ground vias. Note B2: Bootstrap low impedance X7R ceramic capacitors placed on bottom side providing a short low inductance current loop. Note B3: Return currents from bulk capacitors and output filter capacitors. Figure 15. Printed Circuit Board - Bottom Layer Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TAS5613 23 PACKAGE OPTION ADDENDUM www.ti.com 15-Dec-2009 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty TAS5613PHD ACTIVE HTQFP PHD 64 TAS5613PHDR ACTIVE HTQFP PHD 64 90 Lead/Ball Finish MSL Peak Temp (3) Green (RoHS & no Sb/Br) CU NIPDAU Level-5A-260C-24 HR 1000 Green (RoHS & no Sb/Br) CU NIPDAU Level-5A-260C-24 HR (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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