IDT IDT70V9269

HIGH-SPEED 3.3V 16K x 16
SYNCHRONOUS PIPELINED
DUAL-PORT STATIC RAM
IDT70V9269S/L
Features:
◆
◆
◆
◆
◆
◆
True Dual-Ported memory cells which allow simultaneous
access of the same memory location
High-speed clock to data access
– Commercial: 9/12/15ns (max.)
Low-power operation
– IDT70V9269S
Active: 429mW (typ.)
Standby: 3.3mW (typ.)
– IDT70V9269L
Active: 429mW (typ.)
Standby: 1.32mW (typ.)
Flow-through or Pipelined output mode on either port via
the FT/PIPE pin
Counter enable and reset features
Dual chip enables allow for depth expansion without
◆
◆
◆
◆
◆
additional logic
Full synchronous operation on both ports
– 4ns setup to clock and 1ns hold on all Control,
data, and address inputs
– Data input, address, and control registers
– Fast 9ns clock to data out in the Pipelined output mode
– Self-timed write allows fast cycle time
– 15ns cycle time, 66MHz operation in Pipelined output mode
Separate upper-byte and lower-byte controls for
multiplexed bus and bus matching compatibility
LVTTL- compatible, single 3.3V (±0.3V) power supply
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Available in a 128-pin Thin Quad Flatpack (TQFP) package
Functional Block Diagram
R/WL
R/WR
UBR
UBL
CE0L
1
0
CE1L
CE0R
1
0
0/1
0/1
CE1R
LBL
OEL
LBR
OER
FT/PIPEL
0/1
1b 0b
b
a
0a 1a
1a 0a
a
b
0b 1b
I/O8L-I/O15L
0/1
FT/PIPER
I/O8R-I/O15R
I/O
Control
I/O
Control
I/O0L-I/O7L
I/O0R-I/O7R
A13R
A13L
A0L
CLKL
ADSL
Counter/
Address
Reg.
MEMORY
ARRAY
CNTENL
CNTRSTL
Counter/
Address
Reg.
A0R
CLKR
ADSR
CNTENR
CNTRSTR
3752 drw 01
JANUARY 2001
1
©2000 Integrated Device Technology, Inc.
DSC 3752/6
IDT70V9269S/L
High-Speed 16K x 16 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Description:
128
127
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103
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38
70V9269PRF
PK-128(4)
128-Pin TQFP
Top View(5)
102
101
100
99
98
97
96
95
94
93
92
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90
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65
A10L
A11L
A12L
A13L
N/C
N/C
N/C
N/C
LBL
UBL
CE 0L
CE 1L
CNTRST L
VCC
GND
R/WL
OEL
FT/PIPEL
GND
I/O15L
I/O14L
I/O13L
I/O12L
VCC
GND
I/O11L
N/C
N/C
N/C
N/C
A9R
A8R
A7R
A6R
A5R
A4R
A3R
A2R
A1R
A0R
NC
CNTENR
CLKR
ADSR
GND
VCC
ADSL
CLKL
CNTENL
NC
A0L
A1L
A2L
A3L
A4L
A5L
A6L
A7L
A8L
A9L
N/C
N/C
N/C
N/C
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
Pin Configuration(1,2,3)
With an input data register, the IDT70V9269 has been optimized for
applications having unidirectional or bidirectional data flow in bursts. An
automatic power down feature, controlled by CE0 and CE1, permits the
on-chip circuitry of each port to enter a very low standby power mode.
Fabricated using IDT’s CMOS high-performance technology, these
devices typically operate on only 429mW of power.
A10R
A11R
A12R
A13R
N/C
N/C
N/C
N/C
LBR
UB R
CE 0R
CE 1R
CNTRST R
VCC
GND
R/WR
OER
FT/PIPER
GND
I/O15R
I/O14R
I/O13R
I/O12R
VCC
VCC
I/O11R
The IDT70V9269 is a high-speed 16K x 16 bit synchronous Dual-Port
RAM. The memory array utilizes Dual-Port memory cells to allow
simultaneous access of any address from both ports. Registers on control,
data, and address in-puts provide minimal setup and hold times. The timing
latitude provided by this approach allows systems to be designed with very
short cycle times.
NOTES:
1. All Vcc pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. Package body is approximately 14mm x 20mm x 1.4mm.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
6.42
2
I/O10R
I/O9R
GND
N/C
I/O8R
N/C
N/C
I/O7R
VCC
I/O6R
I/O5R
I/O4R
GND
I/O3R
VCC
I/O2R
I/O1R
I/O0R
GND
VCC
I/O0L
I/O1L
GND
I/O2L
I/O3L
GND
I/O4L
I/O5L
I/O6L
I/O7L
VCC
N/C
N/C
I/O8L
N/C
VCC
I/O9L
I/O10L
3752 drw 02
IDT70V9269S/L
High-Speed 16K x 16 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Pin Names
Left Port
Right Port
Names
CE0L, CE1L
CE0R, CE1R
Chip Enables
R/WL
R/WR
Read/Write Enable
OEL
OER
Output Enable
A0L - A13L
A0R - A13R
Address
I/O0L - I/O15L
I/O0R - I/O15R
Data Input/Output
CLKL
CLKR
Clock
UBL
UBR
Upper Byte Select
LBL
LBR
Lower Byte Select
ADSL
ADSR
Address Strobe Enable
CNTENL
CNTENR
Counter Enable
CNTRSTL
CNTRSTR
Counter Reset
FT/PIPEL
FT/PIPER
Flow-Through / Pipeline
VCC
Power
GND
Ground
3752 tbl 01
Truth Table I—Read/Write and Enable Control(1,2,3)
OE
CLK
CE0
CE1
UB
LB
R/W
Upper Byte
I/O8-15
Lower Byte
I/O0-7
X
↑
H
X
X
X
X
High-Z
High-Z
Deselected–Power Down
X
↑
X
L
X
X
X
High-Z
High-Z
Deselected–Power Down
X
↑
L
H
H
H
X
High-Z
High-Z
Both Bytes Deselected
X
↑
L
H
L
H
L
DATAIN
High-Z
Write to Upper Byte Only
X
↑
L
H
H
L
L
High-Z
DATAIN
Write to Lower Byte Only
X
↑
L
H
L
L
L
DATAIN
DATAIN
Write to Both Bytes
L
↑
L
H
L
H
H
DATAOUT
High-Z
Read Upper Byte Only
L
↑
L
H
H
L
H
High-Z
DATAOUT
Read Lower Byte Only
L
↑
L
H
L
L
H
DATAOUT
DATAOUT
Read Both Bytes
H
↑
L
H
L
L
X
High-Z
High-Z
Outputs Disabled
MODE
3752 tbl 02
NOTES:
1. "H" = VIH, "L" = V IL, "X" = Don't Care.
2. ADS, CNTEN, CNTRST = X.
3. OE is an asynchronous input signal.
6.42
3
IDT70V9269S/L
High-Speed 16K x 16 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Truth Table II—Address Counter Control(1,2)
Address
Previous
Address
Addr
Used
CLK
ADS
CNTEN
CNTRST
I/O(3)
X
X
0
↑
X
X
L
DI/O(0)
Counte r Reset to Address 0
An
X
An
↑
L(4)
X
H
DI/O(n)
External Address Loaded into Counter
An
Ap
Ap
↑
H
H
H
DI/O(p)
External Address Blocked—Counter disabled (Ap reused)
Ap + 1
↑
H
DI/O(p+1)
X
Ap
(5)
H
L
MODE
Counter Enabled—Internal Address generation
3752 tbl 03
NOTES:
1. "H" = VIH, "L" = V IL, "X" = Don't Care.
2. CE0, LB, UB, and OE = VIL; CE1 and R/W = VIH.
3. Outputs configured in Flow-Through Output mode; if outputs are in Pipelined mode the data out will be delayed by one cycle.
4. ADS is independent of all other signals including CE0, CE1, UB and LB.
5. The address counter advances if CNTEN = VIL on the rising edge of CLK, regardless of all other signals including CE0, CE1, UB and LB.
Recommended Operating
Temperature and Supply Voltage(1,2)
Grade
Commercial
Industrial
Recommend DC Operating
Conditions
Symbol
Ambient
Temperature
GND
Vcc
0OC to +70OC
0V
3.3V + 0.3V
-40OC to +85OC
0V
3.3V + 0.3V
Parameter
VCC
Supply Voltage
GND
Ground
VIH
Input High Voltage
Min.
Typ.
Max.
Unit
3.0
3.3
3.6
V
0
0
0
2.2
____
V
VCC+0.3V
(2)
V
3752 tbl 04
NOTE:
1. Industrial temperature: for specific speeds, packages and powers contact your
sales office.
2. This is the parameter TA. This is the "instant on" case temperature.
VTERM(2)
Rating
Commercial
& Industrial
Unit
Terminal Voltage
with Respect to
GND
-0.5 to +4.6
V
-0.3
0.8
V
3752 tbl 05
NOTES:
1. VIL > -1.5V for pulse width less than 10 ns.
2. VTERM must not exceed VCC + 0.3V.
Symbol
CIN
COUT(3)
TBIAS
Temperature
Under Bias
-55 to +125
o
C
TSTG
Storage
Temperature
-65 to +150
o
C
IOUT
DC Output Current
50
Input Low Voltage
____
Capacitance(1) (TA = +25°C, f = 1.0MHz)
Absolute Maximum Ratings(1)
Symbol
VIL
(1)
Parameter
Input Capacitance
Output Capacitance
Conditions(2)
Max.
Unit
VIN = 3dV
9
pF
VOUT = 3dV
10
pF
3752 tbl 07
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output switch
from 0V to 3V or from 3V to 0V.
3. COUT also references CI/O.
mA
3752 tbl 06
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed VCC + 0.3V for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of VTERM > VCC + 0.3V.
6.42
4
IDT70V9269S/L
High-Speed 16K x 16 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VCC = 3.3V ± 0.3V)
70V9269S
Symbol
Parameter
Test Conditions
70V9269L
Min.
Max.
Min.
Max.
Unit
10
___
5
µA
5
µA
Input Leakage Current(1)
V CC = 3.6V, VIN = 0V to V CC
___
|ILO|
Output Leakage Current
CE = VIH or CE1 = VIL, VOUT = 0V to V CC
___
10
___
VOL
Output Low Voltage
IOL = +4mA
___
0.4
___
0.4
V
VOH
Output High Voltage
IOH = -4mA
2.4
___
2.4
___
V
|ILI|
3752 tbl 08
NOTE:
1. At Vcc < 2.0V input leakages are undefined.
DC Electrical Characteristics Over the Operating
Temperture and Supply Voltage Range(3,6,7) (VCC = 3.3V ± 0.3V)
70V9269X9
Com'l Only
Symbol
ICC
ISB1
ISB2
ISB3
ISB4
Parameter
Dynamic
Operating
Current (Both
Ports Active)
Standby
Current (Both
Ports - TTL
Level Inputs)
Standby
Current (One
Port - TTL
Level Inputs)
Test Condition
CEL and CER= VIL,
Outputs Disabled,
f = fMAX(1)
CEL = CER = VIH
f = fMAX
Version
70V9269X12
Com'l Only
70V9269X15
Com'l Only
Typ. (4)
Max.
Typ.(4)
Max.
Typ.(4)
Max.
Unit
mA
COM'L
S
L
180
180
260
225
150
150
240
205
130
130
220
185
IND
S
L
____
____
____
____
____
____
____
____
____
____
____
____
COM'L
S
L
50
50
75
65
40
40
65
50
30
30
55
35
IND
S
L
____
____
____
____
____
____
____
____
____
____
____
____
S
L
110
110
170
150
100
100
160
140
90
90
150
130
S
L
____
____
____
____
____
____
____
____
____
____
____
____
COM'L
S
L
1.0
0.4
5
3
1.0
0.4
5
3
1.0
0.4
5
3
IND
S
L
____
____
____
____
____
____
____
____
____
____
____
____
COM'L
S
L
100
100
160
140
90
90
150
130
80
80
140
120
IND
S
L
____
____
____
____
____
____
____
____
____
____
____
____
mA
(1)
COM'L
CE"A" = VIL and
CE"B" = VIH(5)
Active Port Outputs Disabled,
IND
f=fMAX(1)
Full Standby
Current (Both
Ports - CMOS
Level Inputs)
Both Ports CEL and
CER > VCC - 0.2V,
VIN > VCC - 0.2V or
VIN < 0.2V, f = 0(2)
Full Standby
Current (One
Port - CMOS
Level Inputs)
CE"A" < 0.2V and
CE"B" > VCC - 0.2V(5)
VIN > VCC - 0.2V or
VIN < 0.2V, Active Port,
Outputs Disable d, f = fMAX(1)
mA
mA
mA
3752 tbl 09
NOTES:
1. At f = f MAX, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/tCYC, using "AC TEST CONDITIONS" at input
levels of GND to 3V.
2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby.
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
4. Vcc = 3.3V, T A = 25°C for Typ, and are not production tested. ICC DC(f=0) = 90mA (Typ).
5. CE X = VIL means CE0X = VIL and CE1X = VIH
CE X = VIH means CE0X = VIH or CE1X = V IL
CE X < 0.2V means CE0X < 0.2V and CE1X > VCC - 0.2V
CE X > VCC - 0.2V means CE0X > VCC - 0.2V or CE1X < 0.2V
'X' represents "L" for left port or "R" for right port.
6. 'X' in part number indicates power rating (S or L).
7. Industrial temperature: for specific speeds, packages and powers contact your sales office.
6.42
5
IDT70V9269S/L
High-Speed 16K x 16 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
AC Test Conditions
GND to 3.0V
Input Pulse Levels
Input Rise/Fall Times
3ns
Input Timing Reference Levels
1.5V
Output Reference Levels
1.5V
Figures 1, 2, and 3
Output Load
3752 tbl 10
3.3V
3.3V
590Ω
590Ω
DATAOUT
DATAOUT
30pF
435Ω
3752 drw 03
3752 drw 04
Figure 2. Output Test Load
(For tCKLZ, tCKHZ, tOLZ, and tOHZ ).
*Including scope and jig.
Figure 1. AC Output Test load.
8
7
5pF*
435Ω
- 10pF is the I/O capacitance
of this device, and 30pF is the
AC Test Load Capacitance
6
tCD1,
tCD2
(Typical, ns)
5
4
3
2
1
0
-1
20 40 60 80 100 120 140 160 180 200
Capacitance (pF)
3752 drw 05
Figure 3. Typical Output Derating (Lumped Capacitive Load).
6.42
6
,
IDT70V9269S/L
High-Speed 16K x 16 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the Operating Tempurature Range
(Read and Write Cycle Timing)(3,4,5) (VCC = 3.3V ± 0.3v, TA = 0°C to +70°C)
70V9269X9
Com'l Only
Symbol
tCYC1
tCYC2
tCH1
Parameter
Clock Cycle Time (Flow-Through)
Clock Cycle Time (Pipelined)
(2)
(2)
(2)
Clock High Time (Flow-Through)
(2)
Min.
Max.
25
____
15
____
12
____
70V9269X12
Com'l Only
Min.
Max.
30
____
20
____
12
____
70V9269X15
Com'l Only
Min.
Max.
Unit
35
____
ns
25
____
ns
12
____
ns
ns
12
____
12
____
12
____
tCH2
(2)
Clock High Time (Pipelined)
6
____
8
____
10
____
ns
tCL2
Clock Low Time (Pipelined)(2)
6
____
8
____
10
____
ns
tR
Clock Rise Time
____
3
____
3
____
3
ns
Clock Fall Time
____
3
____
3
____
3
ns
4
____
4
____
4
____
ns
1
____
1
____
1
____
ns
4
____
4
____
4
____
ns
1
____
1
____
1
____
ns
4
____
4
____
4
____
ns
ns
tCL1
tF
tSA
tHA
tSC
tHC
tSW
Clock Low Time (Flow-Through)
Address Setup Time
Address Hold Time
Chip Enable Setup Time
Chip Enable Hold Time
R/W Setup Time
tHW
R/W Hold Time
1
____
1
____
1
____
tSD
Input Data Setup Time
4
____
4
____
4
____
ns
tHD
Input Data Hold Time
1
____
1
____
1
____
ns
tSAD
ADS Setup Time
4
____
4
____
4
____
ns
tHAD
ADS Hold Time
1
____
1
____
1
____
ns
tSCN
CNTEN Setup Time
4
____
4
____
4
____
ns
tHCN
CNTEN Hold Time
1
____
1
____
1
____
ns
tSRST
CNTRST Setup Time
4
____
4
____
4
____
ns
tHRST
CNTRST Hold Time
1
____
1
____
1
____
ns
____
12
____
12
____
15
ns
2
____
2
____
2
____
ns
1
7
1
7
1
7
ns
tOE
tOLZ
tOHZ
tCD1
tCD2
Output Enable to Data Valid
(1)
Output Enable to Output Low-Z
(1)
Output Enable to Output High-Z
(2)
____
Clock to Data Valid (Flow-Through)
(2)
Clock to Data Valid (Pipelined)
20
____
25
____
30
ns
____
9
____
12
____
15
ns
ns
tDC
Data Output Hold After Clock High
2
____
2
____
2
____
tCKHZ
Clock High to Output High-Z(1)
2
9
2
9
2
9
ns
tCKLZ
Clock High to Output Low-Z(1)
2
____
2
____
2
____
ns
Write Port Clock High to Read Data Delay
____
35
____
40
____
50
ns
Clock-to-Clock Setup Time
____
15
____
15
____
20
Port-to-Port Delay
tCWDD
tCCS
ns
70V9269 tbl 11
NOTES:
1. Transition is measured 0mV from Low or High-Impedance voltage with the Output Test Load (Figure 2). This parameter is guaranteed by device
characterization, but is not production tested.
2. The Pipelined output parameters (tCYC2, tCD2) apply to either or both left and right when FT/PIPE = V IH. Flow-through parameters (tCYC1, tCD1) apply when
FT/PIPE = VIL for that port.
3. All input signals are synchronous with respect to the clock except for the asynchronous Output Enable (OE) and FT/PIPEX.
4. 'X' in part number indicates power rating (S or L).
5. Industrial temperature: for specific speeds, packages and powers contact your sales office.
6.42
7
IDT70V9269S/L
High-Speed 16K x 16 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Read Cycle for
Flow-through Output on Either Port (FT/PIPEX = VIL)(3)
tCYC1
tCH1
tCL1
CLK
CE0
tSC
tSC
tHC
tHC
(4)
CE1
tSB
tHB
UB, LB
tSB
R/W
(5)
ADDRESS
tSW
tHW
tSA
tHA
An
An + 1
tCKHZ
Qn
DATAOUT
tCKLZ
An + 3
tDC
tCD1
OE
An + 2
tHB
Qn + 1
(1)
tOHZ
(1)
Qn + 2
(1)
tOLZ
tDC
(1)
(2)
tOE
3752 drw 06
Timing Waveform of Read Cycle for Pipelined Operation on Either Port
(FT/PIPEX = VIH)(3)
tCYC2
tCH2
tCL2
CLK
CE0
tSC
tSC
tHC
tHC
(4)
CE1
tSB
tSB
tHB
UB, LB
R/W
(5)
ADDRESS
tSW
tHW
tSA
tHA
An
An + 1
(1 Latency)
An + 2
Qn
tCKLZ
An + 3
tDC
tCD2
DATAOUT
OE
tHB
(6)
(1)
Qn + 1
Qn + 2
(1)
tOHZ
tOLZ
(6)
(1)
(2)
tOE
NOTES:
3752 drw 07
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. OE is asynchronously controlled; all other inputs are synchronous to the rising clock edge.
3. ADS = VIL, CNTEN and CNTRST = VIH.
4. The output is disabled (High-Impedance state) by CE0 = V IH, CE1 = VIL, UB = VIH, or LB = V IH following the next rising edge of the clock. Refer to Truth Table 1.
5. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for
reference use only.
6. If UB or LB was HIGH, then the Upper Byte and/or Lower Byte of DATAOUT for Qn + 2 would be disabled (High-Impedance state).
6.42
8
IDT70V9269S/L
High-Speed 16K x 16 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of a Multi-device Pipelined Read(1,2)
tCH2
tCYC2
tCL2
CLK
tSA
tHA
A0
ADDRESS(B1)
tSC
tHC
CE0(B1)
tSC
tHC
tCD2
tCD2
Q0
DATAOUT(B1)
tDC
tSA
tSC
(3)
tCD2
Q3
Q1
tDC
tCKLZ
(3)
tCKHZ (3)
A6
A5
A4
A3
A2
A1
tSC
CE0(B2)
tCKHZ
tHA
A0
ADDRESS(B2)
A6
A5
A4
A3
A2
A1
tHC
tHC
tCKHZ(3)
tCD2
DATAOUT(B2)
tCKLZ(3)
tCD2
Q2
tCKLZ
Q4
(3)
3752 drw 08
Timing Waveform of Left Port Write to Flow-through Right Port Read(4,5)
CLK L
tSW
tHW
tSA
tHA
R/W L
ADDRESS L
tSD
DATAIN L
NO
MATCH
MATCH
tHD
VALID
tCCS
(6)
CLK R
tCD1
R/W R
ADDRESS R
tSW
tHW
tSA
tHA
NO
MATCH
MATCH
tCWDD
(6)
tCD1
DATAOUT R
VALID
VALID
tDC
tDC
3752 drw 09
NOTES:
1. B1 Represents Device #1; B2 Represents Device #2. Each Device consists of one IDT70V9269 for this waveform, and are setup for depth expansion in this
example. ADDRESS(B1) = ADDRESS (B2) in this situation.
2. UB, LB, OE, and ADS = VIL; CE1(B1) , CE1(B2), R/W, CNTEN, and CNTRST = VIH.
3. Transition is measured 0mV from Low or High-Impedance voltage with the Output Test Load (Figure 2).
4. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and CNTRST = V IH.
5. OE = VIL for the Right Port, which is being read from. OE = VIH for the Left Port, which is being written to.
6. If tCCS < maximum specified, then data from right port READ is not valid until the maximum specified for tCWDD .
If tCCS > maximum specified, then data from right port READ is not valid until tCCS + tCD1. tCWDD does not apply in this case.
6.42
9
IDT70V9269S/L
High-Speed 16K x 16 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Pipelined Read-to-Write-to-Read (OE = VIL)(3)
tCYC2
tCH2
tCL2
CLK
CE0
tSC
tHC
tSB
tHB
CE1
UB, LB
tSW tHW
R/W
(4)
ADDRESS
tSW tHW
An
tSA tHA
An +1
An + 2
An + 4
An + 3
An + 2
tSD tHD
DATAIN
Dn + 2
tCD2
(2)
tCKHZ
(1)
(1)
tCD2
tCKLZ
Qn + 3
Qn
DATAOUT
READ
NOP
(5)
WRITE
READ
3752 drw 10
Timing Waveform of Pipelined Read-to-Write-to-Read (OE Controlled)(3)
tCH2
tCYC2
tCL2
CLK
CE0
tSC
tHC
tSB
tHB
CE1
UB, LB
tSW tHW
R/W
(4)
ADDRESS
tSW tHW
An
tSA tHA
An +1
An + 2
tSD
DATAIN
Dn + 3
Dn + 2
tCD2
(2)
An + 3
An + 4
An + 5
tHD
tCKLZ(1)
tCD2
Qn
DATAOUT
Qn + 4
tOHZ(1)
OE
READ
WRITE
READ
3752 drw 11
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
3. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and CNTRST = V IH. "NOP" is "No Operation".
4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for
reference use only.
5. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
6.42
10
IDT70V9269S/L
High-Speed 16K x 16 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Flow-through Read-to-Write-to-Read (OE = VIL)(3)
tCH1
tCYC1
tCL1
CLK
CE0
tSC
tHC
tSB
tHB
CE1
UB, LB
tSW tHW
R/W
tSW tHW
An
tSA tHA
(4)
ADDRESS
An +1
An + 2
An + 4
An + 3
An + 2
tSD tHD
DATAIN
Dn + 2
tCD1
(2)
tCD1
Qn
DATAOUT
tCD1
tCD1
Qn + 1
tDC
tCKHZ
(5)
NOP
READ
(1)
tCKLZ
Qn + 3
tDC
(1)
READ
WRITE
3752 drw 12
Timing Waveform of Flow-through Read-to-Write-to-Read (OE Controlled)(3)
tCYC1
tCH1
tCL1
CLK
CE0
tSC
tHC
tSB
tHB
CE1
UB, LB
tSW tHW
R/W
tSW tHW
(4)
An
tSA tHA
ADDRESS
An +1
DATAIN
(2)
DATAOUT
An + 2
tSD tHD
An + 3
Dn + 2
Dn + 3
tDC
tCD1
Qn
An + 4
tOE
tCD1
(1)
tOHZ
(1)
An + 5
tCKLZ
tCD1
Qn + 4
tDC
OE
READ
WRITE
READ
3752 drw 13
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. Output state (High, Low, or HIgh-impedance) is determined by the previous cycle control signals.
3. CE 0, UB, LB, and ADS = VIL; CE1, CNTEN, and CNTRST = VIH .
4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for
reference use only.
5. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
6.42
11
IDT70V9269S/L
High-Speed 16K x 16 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Pipelined Read with Address Counter Advance (1)
tCH2
tCYC2
tCL2
CLK
tSA
tHA
An
ADDRESS
tSAD tHAD
ADS
tSAD tHAD
CNTEN
tSCN tHCN
tCD2
DATAOUT
Qx - 1(2)
Qn + 2(2)
Qn + 1
Qn
Qx
Qn + 3
tDC
READ
EXTERNAL
ADDRESS
READ
WITH
COUNTER
COUNTER
HOLD
READ WITH COUNTER
3752 drw 14
Timing Waveform of Flow-through Read with Address Counter Advance(1)
tCH1
tCYC1
tCL1
CLK
tSA
ADDRESS
tHA
An
tSAD tHAD
ADS
tSAD tHAD
tSCN tHCN
CNTEN
tCD1
DATAOUT
Qx(2)
Qn
Qn + 1
Qn + 2
Qn + 3(2)
Qn + 4
tDC
READ
EXTERNAL
ADDRESS
READ WITH COUNTER
COUNTER
HOLD
READ
WITH
COUNTER
3752 drw 15
NOTES:
1. CE0, OE, UB, and LB = VIL; CE1, R/W, and CNTRST = V IH.
2. If there is no address change via ADS = VIL (loading a new address) or CNTEN = VIL (advancing the address, i.e. ADS = VIH and CNTEN = VIH, then the data
output remains constant for subsequent clocks.
6.42
12
IDT70V9269S/L
High-Speed 16K x 16 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Write with Address Counter Advance
(Flow-Through or Pipelined Outputs) (1)
tCH2
tCYC2
tCL2
CLK
tSA
tHA
An
ADDRESS
INTERNAL(3)
ADDRESS
An(7)
An + 2
An + 1
An + 4
An + 3
tSAD tHAD
ADS
CNTEN(7)
tSD tHD
Dn + 1
Dn
DATAIN
WRITE
EXTERNAL
ADDRESS
Dn + 1
Dn + 4
Dn + 3
Dn + 2
WRITE
WRITE
WITH COUNTER COUNTER HOLD
WRITE WITH COUNTER
3752 drw 16
Timing Waveform of Counter Reset (Pipelined Outputs)(2)
tCH2
tCYC2
tCL2
CLK
tSA tHA
(4)
An
ADDRESS
INTERNAL(3)
ADDRESS
Ax
(6)
0
1
An + 1
An + 2
An + 1
An
tSW tHW
R/W
ADS
tSAD tHAD
CNTEN
tSCN tHCN
tSRST tHRST
CNTRST
tSD
tHD
D0
DATAIN
(5)
Q1
Q0
DATAOUT
COUNTER
RESET
(6)
WRITE
ADDRESS 0
READ
ADDRESS 0
READ
ADDRESS 1
READ
ADDRESS n
Qn
READ
ADDRESS n+1
NOTES:
3752 drw 17
1. CE0, UB, LB, and R/W = VIL; CE1 and CNTRST = VIH.
2. CE0, UB, LB = VIL; CE1 = VIH.
3. The "Internal Address" is equal to the "External Address" when ADS = VIL and equals the counter output when ADS = VIH.
4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for
reference use only.
5. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
6. No dead cycle exists during counter reset. A READ or WRITE cycle may be coincidental with the counter reset cycle. ADDR0 will be accessed. Extra cycles
are shown here simply for clarification.
7. CNTEN = VIL advances Internal Address from ‘An’ to ‘An + 1’. The transition show indicates the time required for the counter to advance. The ‘An +1’ Address is
written to during this cycle.
6.42
13
IDT70V9269S/L
High-Speed 16K x 16 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Functional Description
Depth and Width Expansion
The IDT70V9269 provides a true synchronous Dual-Port Static RAM
interface. Registered inputs provide minimal set-up and hold times on
address, data, and all critical control inputs. All internal registers are clocked
on the rising edge of the clock signal, however, the self-timed internal write
pulse is independent of the LOW to HIGH transition of the clock signal.
An asynchronous output enable is provided to ease asynchronous
bus interfacing. Counter enable inputs are also provided to stall the
operation of the address counters for fast interleaved memory applications.
A HIGH on CE0 or a LOW on CE1 for one clock cycle will power down
the internal circuitry to reduce static power consumption. Multiple Chip
Enables allow easier banking of multiple IDT70V9269's for depth expansion configurations. When the Pipelined output mode is enabled, two cycles
are required with CE0 LOW and CE1 HIGH to re-activate the outputs.
The IDT70V9269 features dual chip enables (refer to Truth Table 1)
in order to facilitate rapid and simple depth expansion with no requirements
for external logic. Figure 4 illustrates how to control the various chip
enables in order to expand two devices in depth.
The IDT70V9269 can also be used in applications requiring expanded
width, as indicated in Figure 4. Since the banks are allocated at the
discretion of the user, the external controller can be set up to drive the input
signals for the various devices as required to allow for 32-bit or wider
applications.
A14
IDT70V9269
CE0
CE1
CE1
VCC
CE1
IDT70V9269
VCC
CE1
CE0
CE0
Control Inputs
CE0
Control Inputs
Control Inputs
IDT70V9269
IDT70V9269
Control Inputs
3752 drw 18
Figure 4. Depth and Width Expansion with IDT70V9269
6.42
14
CNTRST
CLK
ADS
CNTEN
R/W
LB, UB
OE
IDT70V9269S/L
High-Speed 16K x 16 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Ordering Information
IDT
XXXXX
A
99
A
A
Device
Type
Power
Speed
Package
Process/
Temperature
Range
Blank
I (1)
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
PRF
128-pin TQFP (PK128-1)
9
12
15
Commercial Only
Commercial Only
Commercial Only
S
L
Standard Power
Low Power
Speed in nanoseconds
70V9269 256K (16K x 16-Bit) Synchronous Dual-Port RAM
3752 drw 19
NOTE:
1. Industrial temperature range is available.
For specific speeds, packages and powers contact your sales office.
Datasheet Document History
1/12/99:
6/15/99:
8/20/99:
4/4/00:
1/17/01:
Initiated datasheet document history
Converted to new format
Cosmetic and typographical corrections
Added additional notes to pin configurations
Page 14 Added Depth and Width Expansion section
Page 4 Deleted note 6 for Table II
Fixed Pin Configuration
Replaced IDT logo
Added FT/PIPE to left port
Changed ±200mV to 0mV in notes
Page 4 Changed information in Truth Table II
Increased storage temperature parameters
Clarified TA parameter
Page 5 DC Electrical parameters–changed wording from "open" to "disabled"
Removed Preliminary status
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6.42
15
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