61090 Features: • • • • • Mii SURFACE MOUNT (NPN) GENERAL PURPOSE TRANSISTOR (2N2222AUB) OPTOELECTRONIC PRODUCTS DIVISION Applications: Hermetically sealed Miniature package to minimize circuit board area Ceramic surface mount package Footprint and pin-out matches SOT-23 packaged transistors MIL-PRF-19500 screening available • • • • Analog Switches Signal Conditioning Small Signal Amplifiers High Density Packaging DESCRIPTION The 61090 is a hermetically sealed ceramic surface mount general purpose switching transistor. This miniature ceramic package is ideal for designs where board space and device weight are important requirements. This device is available custom binned to customer specifications or screened to MIL-PRF-19500. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage ...............................................................................................................................................................75V Collector-Emitter Voltage............................................................................................................................................................50V Emitter-Collector Voltage..............................................................................................................................................................6V Continuous Collector Current ............................................................................................................................................... 800mA Power Dissipation (Derate at the rate of 3.33 mW/°C above 25°C) .................................................................................. 500mW Maximum Junction Temperature..........................................................................................................................................+200°C Operating Temperature (See part selection guide for actual operating temperature) ......................................... -65°C to +200°C Storage Temperature............................................................................................................................................. -65°C to +200°C Lead Soldering Temperature (vapor phase reflow for 30 seconds) .....................................................................................215°C Package Dimensions ORIENTATION KEY Schematic Diagram 0.054 [1.37] 0.046 [1.17] C 3 3 0.105 [2.67] 0.085 [2.16] 0.036 [0.91] 0.024 [0.61] 3 PLACES 2 0.125 [3.18] 0.115 [2.92] 1 0.024 [0.61] 0.016 [0.41] E 2 B 1 ALL DIMENSIONS ARE IN INCHES [MILLIMETERS] MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: [email protected] 8-8 61090 SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (TYPE 2N2222AUB) ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER SYMBOL MIN UNITS TEST CONDITIONS BVCBO 75 V IC = 10µA, IE = 0 Collector-Emitter Breakdown Voltage BVCEO 50 V IC = 10mA, IB = 0µA Emitter-Base Breakdown Voltage BVEBO 6 V IC = 0, IE = 10µA 10 nA VCB = 60V, IE = 0 10 µA VCB = 60V, IE = 0, TA = 150°C ICES 50 nA VCE = 50V IEBO 10 nA VEB = 4.0V, IC =0 - VCE = 10V, IC = 0.1mA - VCE = 10V, IC =1mA - VCE = 10V, IC =10mA - VCE = 10V, IC = 150mA 1 1 Collector-Base Breakdown Voltage Collector-Base Cutoff Current ICBO Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Forward-Current Transfer Ratio Collector-Emitter Saturation Voltage NOTE hfe1 50 hfe2 75 hfe3 100 hfe4 100 hfe5 30 - VCE = 10V, IC = 500mA hfe6 35 - VCE = 10V, IC = 10mA @ -55°C 0.30 V IC = 150mA, IB = 15mA 1 1.0 V IC = 500mA, IB = 50mA 1 1.20 V IC = 150mA, IB = 15mA 1 2.0 V IC = 500mA IB = 50mA 1 VCE (SAT) Base-Emitter Saturation Voltage MAX VBE (SAT) 0.6 325 300 SMALL-SIGNAL CHARACTERISTICS Small Signal Forward Current Transfer Ratio hfe 50 - VCE = 10V, IC = 1mA, f = 1kHz Small Signal Forward Current Transfer Ratio hfe 2.5 - VCE = 20V, IC = 20mA, f = 100kHz Open Circuit Output Capacitance COBO 8 pf VCB = 10V, 100kHz, < f < 1 MHz CIBO 25 pf VEB = 0.5 V, 100kHz, < f < 1 MHz Turn-On Time ton 35 ns VCC = 30V, IC = 150mA, Turn-Off Time toff 300 ns VCC = 30V, IC = 150mA, Input Capacitance (Output Open Capacitance) IB1 = 15mA IB1 = IB2 = 15mA NOTES: 1. Pulse width < 300µs, duty cycle < 2.0%. RECOMMENDED OPERATING CONDITIONS: PARAMETER Bias Voltage-Collector/Emitter Collector-Emitter Voltage SYMBOL MIN MAX UNITS IC 10 150 mA VCE 5 20 V SELECTION GUIDE PART NUMBER 61090-001 61090-002 61090-101 61090-102 61090-300 PART DESCRIPTION 2N2222AUB PNP transistor, commercial version 2N2222AUB PNP transistor, JAN level screening 2N2222AUB PNP transistor, JANTX level screening 2N2222AUB PNP transistor, JANTXV level screening 2N2222AUB PNP transistor, JANS level screening MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: [email protected] 8-9