Mii HIGH VOLTAGE 66099-4XX RADIATION TOLERANT OPTOCOUPLER OPTOELECTRONIC PRODUCTS DIVISION Rev A 9\25\02 Features: Applications: • • • • • • • • • • Designed to meet or exceed MIL-PRF-19500 radiation requirements High Current Transfer Ratio - 200% typical 1kVdc electrical input to output isolation Base lead provided for conventional transistor biasing 150 V Breakdown voltage Eliminate ground loops Level shifting Line receiver Switching power supplies Motor control DESCRIPTION The 66099-4XX optocoupler consists of a 660 nm GaAIAs LED optically coupled to a high voltage photodiode driving a high voltage transistor mounted in a hermetic TO-5 package. This configuration has proven to be highly tolerant to both proton and total dose radiation. ABSOLUTE MAXIMUM RATINGS Storage Temperature..........................................................................................................................................-65°C to +150°C Operating Free-Air Temperature Range ............................................................................................................-55°C to +100°C Lead Solder Temperature (1/16” (1.6mm) from case for 5 seconds) ................................................................................ 240°C Input Diode Forward DC Current.........................................................................................................................................40mA Input Power Dissipation (see Note 1)................................................................................................................................80mW Reverse Input Voltage ............................................................................................................................................................. 3V Collector-Base Voltage .........................................................................................................................................................150V Collector-Emitter Voltage .....................................................................................................................................................150V Emitter-Base Voltage................................................................................................................................................................ 6V Continuous Collector Current ............................................................................................................................................300mA Continuous Transistor Power Dissipation (see Note 2)...................................................................................300mW Notes: 1. Derate linearly 0.80 mW/°C above 25°C. 2. Derate linearly 3.0 mW/°C above 25°C. Package Dimensions 0.040 [1.02] MAX. Schematic Diagram 6 LEADS Ø0.016 [0.41] Ø0.019 [0.48] 5 5 0.305 [7.75] 0.335 [8.51] 0.370 [9.40] 0.336 [8.51] 0.500 [12.70] MIN. 0.155 [3.94] 0.185 [4.70] Ø0.200 [5.08] 6 2 C K E B 3 0.045 [1.14] 0.029 [0.73] 7 3 A 1 45° 0.034 [0.864] 0.028 [0.711] 7 NOTE: ALL LINEAR DIMENSIONS ARE IN INCHES (MILLIMETERS) MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: [email protected] 3 - 20 1 2 66099 –4XX HIGH VOLTAGE RADIATION TOLERANT OPTOCOUPLER Rev A 9\25\02 ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. PARAMETER SYMBOL Input Diode Static Reverse Current IR Input Diode Static Forward Voltage VF MIN TYP MAX UNITS 100 µA VR = 2V 2 V IF = 10mA UNITS TEST CONDITIONS IC = 100µA, IB = 0, IF = 0 0.8 TEST CONDITIONS OUTPUT TRANSISTOR CHARACTERISTICS TA = 25°C unless otherwise noted PARAMETER SYMBOL MIN TYP MAX Collector-Base Breakdown Voltage V(BR)CBO 150 V Collector-Emitter Breakdown Voltage V(BR)CEO 150 V IC = 1mA, IB = 0, IF = 0 Emitter-Base Breakdown Voltage V(BR)EBO 4 V IC = 0mA, IE = 100µA, IF = 0 100 nA VCE = 20V MAX UNITS TEST CONDITIONS Collector-Emitter Cutoff Current ICEO COUPLED CHARACTERISTICS TA = 25°C unless otherwise noted PARAMETER Current Transfer Ratio Collector-Emitter Saturation Voltage Input-Output Isolation Current SYMBOL MIN CTR 100 TYP % VCE = 1V, IF = 10mA VCE(SAT) 0.3 V IF = 20mA, IC = 10mA IISO 100 nA VI-O = 1000V Rise Time tr 20 µs VCE = 10V, IF = 10mA, Fall Time tf 20 µs VCE = 10V, IF = 10mA, RL = 100Ω RL = 100Ω RECOMMENDED OPERATING CONDITIONS: PARAMETER SYMBOL MIN MAX Input Current, Low Level IFL 0 10 UNITS µA Input Current, High Level IFH 1 20 mA Operating Temperature TA -55 100 °C ORDERING INFORMATION: PART NUMBER DESCRIPTION 66099-401 Radiation Tolerant, High Voltage Optocoupler, Commercial 66099-415 Radiation Tolerant, High Voltage Optocoupler, Screened MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: [email protected] 3 - 21