61114 GENERAL PURPOSE (NPN) TRANSISTOR TO-18 PACKAGE (2N2369) Features: Applications • • • • • • • Hermetically sealed Hermetically sealed TO-18 MIL-PRF-19500 screening available Mii OPTOELECTRONIC PRODUCTS DIVISION Analog Switches Signal Conditioning Small Signal Amplifiers High Density Packaging DESCRIPTION The 61114 is a N-P-N, general-purpose switching and amplifier transistor in a TO-18 metal can package. All packages are hermetically sealed for high reliability and harsh environments. This device is available custom binned to customer specifications in commercial or screened to MIL-PRF-19500 up to JANS level. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage-VCBO.......................………...............................................................................................…….....................40Vdc Collector-Emitter Voltage-VCEO..............................................................................................................................…….....................15Vdc Collector-Emitter Voltage-VCES ..............................…….......... .........................................................................................................40Vdc Emitter-Base Voltage-VEBO …………………………………………………………………………………………………………………4.5Vdc Collector Current-IC(PeaK)…………………………………………………………………………………………………………………....500mA Continuous Collector Current.........................……...........................................................................................................................200mA Maximum Junction Temperature..........................................................……...................................................................................+200°C Operating Temperature (See part selection guide for actual operating temperature).....…............................................ -65°C to +125°C Storage Temperature.....................................................................................................……........................................... -65°C to +200°C Lead Soldering Temperature (vapor phase reflow for 30 seconds)............................……..............................................................215°C Package Dimensions Schematic Diagram MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 E-MAIL: [email protected] 7-4 61114 NPN GENERAL PURPOSE TRANSISTOR (TYPE 2N2369) ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. SYMBOL MIN UNITS TEST CONDITIONS Collector-Base Breakdown Voltage PARAMETER BVCBO 40 Vdc I C = 10µA, IE = 0 Collector-Emitter Breakdown Voltage BVCEO 40 Vdc I C = 10µA, IB = 0µA Collector-Emitter Sustaining Voltage BVCES 15 Vdc I C = 10mA, IB = 0µA Emitter-Base Breakdown Voltage BVEBO 4.5 Vdc I C = 0, IE = 10µA 0.4 µA VCB = 20V, IE = 0 30 µA VCB = 20V, IE = 0, TA = 150°C 0.4 µA VCE = 20V 120 - VCE = 1V, IC = 10mA Collector-Base Cutoff Current TYP MAX ICBO Collector-Emitter Cutoff Current ICES Forward-Current Transfer Ratio hfe -- hfe 20 - VCE = 1V, IC = 100mA hfe 20 - VCE = 2V, IC = 100mA hfe4 20 - VCE = 1V, IC = 10mA @ -55°C hfe6 30 - VCE = 0.35V, IC = 10mA @ -55°C Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE (SAT) 0.20 V I C = 10mA, IB = 1mA VCE (SAT) 0.30 V I C = 10mA, IB = 1mA @ +125°C VCE (SAT) 0.25 V I C = 30mA, IB = 3mA VCE (SAT) 0.50 V I C = 100mA, IB = 10mA VBE (SAT) 0.7 0.85 V I C = 10mA, IB = 1mA VBE (SAT) 0.59 -- V I C = 10mA, IB = 1mA @ +125°C 1.02 V I C = 10mA, IB = 1mA @ -55°C 1.15 V I C = 30mA, IB = 3mA 1.60 V I C = 100mA, IE = 10mA MHz VCB = 10V, 100kHz, < f < 1 MHz VBE (SAT) VBE (SAT) SMALL-SIGNAL CHARACTERISTICS Current-Gain---Bandwidth Product fT 500 CIBO 25 pF VEB = 0.5 V, 100kHz, < f < 1 MHz Turn-On Time ton 35 nS Turn-Off Time toff 300 nS VCC = 30V, IC = 150mA, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Input Capacitance (Output Open Capacitance) NOTES: 1. Pulse width < 300µS, duty cycle < 2.0%. SELECTION GUIDE PART NUMBER PART DESCRIPTION 2N2369 PNP transistor, commercial version 2N2369A PNP transistor, JAN level screening 2N2369A PNP transistor, JANTX level screening 2N2369A PNP transistor, JANTXV level screening 2N2369A PNP transistor, JANS level screening NOTE: Also available in dual and quad configurations upon request. Can also be supplied in gull wing surface mount versions. MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 E-MAIL: [email protected] 7-5 NOTE 1