2N4854U Mii SURFACE MOUNT NPN/PNP COMPLEMENTARY TRANSISTORS OPTOELECTRONIC PRODUCTS DIVISION Features: Applications: • • • • • • • • 6 Pin LCC package Rugged package – able to withstand high acceleration load Hermetically sealed MIL-S-19500/421 screening available Power supply control circuits Totem pole drivers Medical – high reliability Military – dense packaging DESCRIPTION The 2N4854U is a hermetically sealed, ceramic surface mount, complementary transistor pair. This device consists of a NPN transistor die and a PNP transistor die. The miniature 6 pin ceramic package is ideal for designs where board space and device weight are important design considerations. NOTE: Micropac is not listed on QPL at this time. ABSOLUTE MAXIMUM RATINGS NPN to PNP Isolation Voltage ....................................................................................................................................... 500 V DC Collector-Base Voltage ............................................................................................................................................................60 V Collector-Emitter Voltage.........................................................................................................................................................40 V Emitter-Base Voltage..............................................................................................................................................................5.0 V Collector Current - Continuous ...........................................................................................................................................600 mA Operating Temperature ........................................................................................................................................-65°C to +200°C Storage Temperature ...........................................................................................................................................-65°C to +200°C Power Dissipation @ T = 25°C ........................................................................................................................................0.60W 1/ Maximum Junction Temperature........................................................................................................................................+200°C Soldering Temperature (vapor phase reflow for 30 sec)...................................................................................................... 215°C Notes: 1. Derate linearly @ 2.85mw/°C for TA > 25°C. Package Dimensions Schematic Diagram A .250 [6.35] .240 [6.10] 0.080 [2.03] 0.066 [1.68] PIN 1 .175 [4.44] .165 [4.19] IDENTIFIER 0.028 [0.71] 0.022 [0.56] 0.098 [2.49] 0.082 [2.08] COLLECTOR 4 1 COLLECTOR 0.055 [1.40] 0.045 [1.14] 2 3 1 4 6 5 0.105 [2.67] 0.095 [2.41] EMITTER 0.070 [1.78] 0.060 [1.53] 6 BASE 2 3 BASE 5 EMITTER ALL DIMENSIONS ARE IN INCHES [MILLIMETERS] MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: [email protected] 3-2 2N4854U SURFACE MOUNT NPN/PNP COMPLEMENTARY TRANSISTORS OPTICAL/ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted. PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current SYMBOL V V V I I I (BR)CBO (BR)CEO (BR)EBO MIN MAX 60 40 5.0 10 10 10 CBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Small Signal Forward Current Transfer Ratio Open Circuit Output Capacitance Turn-On Time Turn-Off Time EBO hfθ 50 35 50 75 100 35 12 300 VCE(SAT) VBE(SAT) hfθ TEST CONDITIONS V I =10µA, I =0 I =10 mA, I =0 I =10µA, I =0 VCB = 50V, I =0 VCB = 50V, I =0, TA = 150°C V =3.0V, I = 0 V =1V, I =150mA 3/ V =10V, I = 0.1mA V =10V, I = 1.0mA V =10V, I = 10mA V =10V, I = 150mA 3/ V =10V, I = 500mA 3/ V =10V, I = 10mA, @-55°C I =150mA, I = 15mA 3/ I =150mA, I =15mA 3/ V =10V, I = 1.0mA, f=1.0kHZ V =20V, I = 20mA, f=100kHZ C V V CBO Emitter-Base Cutoff Current Forward-Current Transfer Ratio UNITS 0.80 60 2.0 C t t obo on off 8.0 35 300 pF ns ns C E E EB V V - B E nA µA NA 0.40 1.20 300 8.0 E C C CE C CE C CE C CE C CE C CE C CE C C B C B CE C CE C V =10V, I00kHz < f < 1.0MHz V =30V, I = 150mA, l =15 mA V =30V, I = 150mA, l = l =15 mA CB CC CC C C B1 B1 B2 Note: 1. Polarities given are for the NPN device. Reverse polarity on limits and conditions as applicable for the PNP side. 2. Pulse width < 300µs, Duty Cycle < 2.0%. MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918 www.micropac.com E-MAIL: [email protected] 3-3