PRODUCT INFORMATION 4D469 840nm LIM Parallel Datacom, Telecom VCSEL Array This device consists of a 4-channel VCSEL array in a miniature surfacemountable MT package. It is based on a unique combination of self-alignment technology and direct optical coupling to fiber, resulting in pure beam shapes and optimum coupling efficiency without need for active alignment. Applications include parallel Fibre Channel and optical interconnect inter/intra-board. And it matches the 4D470 PIN Photodiode Array. Y/b R A IN PRE Optical and Electrical Characteristics (25° C Case Temperature) PARAMETER TEST CONDITION Fiber-Coupled Power SYMBOL MIN. TYP. MAX. UNIT 1.0 mW Optical Power Pfiber Po 1.1 mW Slope Efficiency h 250 mW/A Beam Divergence Q 15 deg Bandwidth fc 2 GHz (dPo/dIF) (3dBel ) Peak Wavelength lp Spectral Width (FWHM) 840 860 nm Dl 0.5 1 nm Forward Voltage (Fig.5) VF 1.8 V Threshold Current Ith 5.5 mA RIN -130 X -25 Relative Intensity Noise Crosstalk 830 Full Width at 1/e2 dB/Hz f=1 GHz dBel (Note 1) Test Condition: If=10mA. Fiber Ribbon: 50/125 GI, NA=0.2 or 62.5/125 GI, NA=0.275. Note 1: Crosstalk between adjacent channels operating at 2GHz. Absolute Maximum Ratings PARAMETER METAL SHIELD CATHODE SYMBOL LIMIT Storage Temperature Tstg -40 to +858C Operating Temperature (derating: Fig.4) Top 0 to +708C Electrical Power Dissipation (derating: Fig.4) Ptot 20 mW/Channel IF 11 mA/Channel IFRM 18 mA/Channel Reverse Voltage VR 1.5 V Soldering Temperature (2mm from the case for 10 sec) Tsld 2608C CATHODE ANODES Continuous Forward Current (f<10 kHz) FRONT VIEW Peak Forward Current (duty cycle<50%, f>1 MHz) All dimensions in mm METAL SHIELD MT GUIDE PINS HEAT SINK LEADS Thermal Characteristics PARAMETER SIDE VIEW The cathode is connected to the metal shield VCSEL Array in MT Package WARNING: Laser Radiation, avoid exposure to beam. Class 3B laser product, potential eye hazard. Warning labels in each box. SYMBOL MIN. TYP. MAX. UNIT Rth TBD 8C/W dl /dTj 0.06 nm/8C Optical Power - Variation 0 to 708C DP 60.7 dB Threshold Current - Variation 0 to 708C DIth 60.6 mA Thermal Resistance Temp. 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