MOSEL V62C18164096L

MOSEL VITELIC
PRELIMINARY
V62C18164096
256K x 16, CMOS STATIC RAM
Features
Description
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The V62C18164096 is a 4,194,304-bit static
random-access memory organized as 262,144
words by 16 bits. Inputs and three-state outputs are
TTL compatible and allow for direct interfacing with
common system bus structures.
High-speed: 85, 100 ns
Ultra low CMOS standby current of 2µA (max.)
Fully static operation
All inputs and outputs directly TTL compatible
Three state outputs
Ultra low data retention current (VCC = 1.0V)
Operating voltage: 1.8V – 2.3V
Packages
– 48-Ball CSP BGA (8mm x 10mm)
Functional Block Diagram
A0
VCC
A6
Row
Decoder
GND
1024 x 4096
Memory Array
A7
A8
A9
I/O1
Column I/O
Input
Data
Circuit
Column Decoder
I/O16
A10
UBE
LBE
OE
WE
CE1
CE2
A17
Control
Circuit
Device Usage Chart
Package Outline
Operating Temperature
Range
Access Time (ns)
Power
B
85
100
L
LL
Temperature
Mark
0°C to 70°C
•
•
•
•
•
Blank
–40°C to +85°C
•
•
•
•
I
V62C18164096 Rev. 1.2 June 2000
1
MOSEL VITELIC
V62C18164096
Pin Descriptions
UBE, LBE Byte Enable
Active low inputs. These inputs are used to enable
the upper or lower data byte.
A0–A17
Address Inputs
These 18 address inputs select one of the 256K x
16 bit segments in the RAM.
WE
Write Enable Input
The write enable input is active LOW and controls
read and write operations. With the chip enabled,
when WE is HIGH and OE is LOW, output data will
be present at the I/O pins; when WE is LOW and
OE is HIGH, the data present on the I/O pins will be
written into the selected memory locations.
CE1, CE2 Chip Enable Inputs
CE1 is active LOW and CE2 is active HIGH. Both
chip enables must be active to read from or write to
the device. If either chip enable is not active, the
device is deselected and is in a standby power
mode. The I/O pins will be in the high-impedance
state when deselected.
I/O1–I/O16 Data Input and Data Output Ports
These 16 bidirectional ports are used to read data
from and write data into the RAM.
Output Enable Input
OE
The output enable input is active LOW. With the
chip enabled, when OE is Low and WE High, data
will be presented on the I/O pins. The I/O pins will
be in the high impedance state when OE is High.
VCC
Power Supply
GND
Ground
Pin Configurations (Top View)
48 BGA
1
2
3
4
A
B
C
D
E
5
6
1
2
3
4
5
A
BLE
OE
A0
A1
A2
B
I/O9
BHE
A3
A4
CE1 I/O1
C I/O10 I/O11 A5
A6
I/O2 I/O3
D
VSS I/O12 A17
A7
I/O4 VCC
E
VCC I/O13 NC
A16 I/O5 VSS
F
I/O15 I/O14 A14 A15 I/O6 I/O7
F
G I/O16
G
H
H
NC
NC
A12 A13
A8
A9
WE
I/O8
A10 A11
NC
Note: NC means no connect.
TOP VIEW
TOP VIEW
V62C18164096 Rev. 1.2 June 2000
2
6
CE2
MOSEL VITELIC
V62C18164096
Part Number Information
V
MOSEL-VITELIC
MANUFACTURED
62
C
18
16
4096
–
TEMP.
SRAM
FAMILY
OPERATING
VOLTAGE
DENSITY
4096K
62 = STANDARD
SPEED
PKG
BLANK = 0°C to 70°C
I = -40°C to +85°C
PWR.
85 ns
100 ns
C = CMOS PROCESS
B = BGA
18 = 1.8V – 2.3V
ORGANIZATION
L = LOW POWER
LL = DOUBLE LOW POWER
16 = 16-bit
Absolute Maximum Ratings (1)
Symbol
Parameter
Commercial
Industrial
Units
VCC
Supply Voltage
-0.5 to VCC + 0.5
-0.5 to VCC + 0.5
V
VN
Input Voltage
-0.5 to VCC + 0.5
-0.5 to VCC + 0.5
V
VDQ
Input/Output Voltage Applied
VCC + 0.3
VCC + 0.3
V
TBIAS
Temperature Under Bias
-10 to +125
-65 to +135
°C
TSTG
Storage Temperature
-55 to +125
-65 to +150
°C
NOTE:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Capacitance* TA = 25°C, f = 1.0MHz
Symbol
Parameter
Conditions
CIN
Input Capacitance
COUT
Output Capacitance
Max.
Unit
VIN = 0V
6
pF
VI/O = 0V
8
pF
NOTE:
1. This parameter is guaranteed and not tested.
Truth Table
Mode
CE1
CE2
OE
WE
UBE
LBE
I/O9-16
Operation
I/O1-8
Operation
Standby
H
X
X
X
X
X
High Z
High Z
Standby
X
L
X
X
X
X
High Z
High Z
Output Disable
L
H
X
X
H
H
High Z
High Z
Output Disable
L
H
H
H
X
X
High Z
High Z
Read
L
H
L
H
L
L
DOUT
DOUT
Read
L
H
L
H
L
H
DOUT
High Z
Read
L
H
L
H
H
L
High Z
DOUT
Write
L
H
X
L
L
L
DIN
DIN
Write
L
H
X
L
L
H
DIN
High Z
Write
L
H
X
L
H
L
High Z
DIN
NOTE:
X = Don’t Care, L = LOW, H = HIGH
V62C18164096 Rev. 1.2 June 2000
3
MOSEL VITELIC
V62C18164096
DC Electrical Characteristics (over all temperature ranges, VCC = 1.8V – 2.3V)
Symbol
Parameter
Min.
Typ.
Max.
Units
VIL
Input LOW Voltage(1,2)
-0.3
—
0.4
V
VIH
Input HIGH Voltage(1)
1.6
—
VCC + 0.3
V
IIL
Input Leakage Current
VCC = Max, VIN = 0V to VCC
-1
—
1
µA
IOL
Output Leakage Current
VCC = Max, CE = VIH, VOUT = 0V to VCC
-1
—
1
µA
VOL
Output LOW Voltage
VCC = Min, IOL = 2.1mA
—
—
0.4
V
VOH
Output HIGH Voltage
VCC = Min, IOH = -0. 1mA
VCC – 0.4
—
—
V
Ind.(3)
Units
mA
Symbol
ICC1
ISB
Test Conditions
Parameter
Power Com.(3)
Average Operating Current, CE1 = VIL, CE2 = VCC – 0.2V, Output Open,
VCC = Max.
f = fmax
25
30
f = 1 MHz
2
3
L
0.4
0.5
LL
0.3
0.3
L
5
7
LL
2
3
TTL Standby Current
CE ≥ VIH, VCC = Max., f = 0
CMOS Standby Current, CE1 ≥ VCC – 0.2V, CE2 < 0.2V
VIN ≥ VCC – 0.2V or VIN ≤ 0.2V, VCC = Max., f = 0
ISB1
NOTES:
1. These are absolute values with respect to device ground and all overshoots due to system or tester noise are included.
2. VIL (Min.) = -3.0V for pulse width < 20ns.
3. Maximum values.
AC Test Conditions
Key to Switching Waveforms
Input Pulse Levels
0 to 1.6V
WAVEFORM
Input Rise and Fall Times
5 ns
Timing Reference Levels
0.9V
Output Load
INPUTS
OUTPUTS
MUST BE
STEADY
WILL BE
STEADY
MAY CHANGE
FROM H TO L
WILL BE
CHANGING
FROM H TO L
MAY CHANGE
FROM L TO H
WILL BE
CHANGING
FROM L TO H
DON'T CARE:
ANY CHANGE
PERMITTED
CHANGING:
STATE
UNKNOWN
DOES NOT
APPLY
CENTER
LINE IS HIGH
IMPEDANCE
“OFF” STATE
see below
AC Test Loads and Waveforms
TTL
CL*
* Includes scope and jig capacitance
CL = 30 pF + 1 TTL Load
V62C18164096 Rev. 1.2 June 2000
4
mA
µA
MOSEL VITELIC
V62C18164096
Data Retention Characteristics
Symbol
Parameter
VDR
VCC for Data Retention
CE1 ≥ VCC – 0.2V, CE2 < 0.2V, VIN ≥ VCC – 0.2V,
or VIN ≤ 0.2V
ICCDR
Data Retention Current
CE1 ≥ VDR – 0.2V, CE2 < 0.2V, VIN ≥ VCC – 0.2V,
or VIN ≤ 0.2V, VDR = 1.0V
Com’l
Ind.
tCDR
tR
Min.
Typ.(2)
Max.
Units
1.0
—
2.3
V
L
—
1
3
µA
LL
—
0.5
1.5
L
—
—
5
LL
—
—
2
0
—
—
ns
tRC(1)
—
—
ns
Power
Chip Deselect to Data Retention Time
Operation Recovery Time (see Retention Waveform)
NOTES:
1. tRC = Read Cycle Time
2. TA = +25°C.
Low VCC Data Retention Waveform (CE Controlled)
Data Retention Mode
VCC
1.8V
VDR ≥ 1V
tCDR
CE1
V62C18164096 Rev. 1.2 June 2000
1.6V
CE1 ≥ VCC – 0.2V
5
1.8V
tR
1.6V
MOSEL VITELIC
V62C18164096
AC Electrical Characteristics
(over all temperature ranges)
Read Cycle
85
Parameter
Name
Parameter
tRC
100
Min.
Max.
Min.
Max.
Unit
Read Cycle Time
85
—
70
—
ns
tAA
Address Access Time
—
85
—
100
ns
tACS
Chip Enable Access Time
—
85
—
100
ns
tBA
UBE, LBE Access Time
—
85
—
100
ns
tOE
Output Enable to Output Valid
—
35
—
40
ns
tCLZ
Chip Enable to Output in Low Z
10
—
15
—
ns
tBLZ
UBE, LBE to Output in Low Z
10
—
15
—
ns
tOLZ
Output Enable to Output in Low Z
10
—
10
—
ns
tCHZ
Chip Disable to Output in High Z
0
30
0
35
ns
tOHZ
Output Disable to Output in High Z
0
30
0
35
ns
tBHZ
UBE, LBE to Output in High Z
0
30
0
35
ns
tOH
Output Hold from Address Change
10
—
10
—
ns
Write Cycle
85
Parameter
Name
Parameter
tWC
100
Min.
Max.
Min.
Max.
Unit
Write Cycle Time
85
—
100
—
ns
tCW
Chip Enable to End of Write
70
—
80
—
ns
tAS
Address Setup Time
0
—
0
—
ns
tAW
Address Valid to End of Write
70
—
80
—
ns
tWP
Write Pulse Width
60
—
70
—
ns
tWR
Write Recovery Time
0
—
0
—
ns
tWHZ
Write to Output High-Z
0
25
0
35
ns
tDW
Data Setup to End of Write
40
—
45
—
ns
tDH
Data Hold from End of Write
0
—
0
—
ns
tBW
UBE, LBE to End of Write
70
—
80
—
ns
V62C18164096 Rev. 1.2 June 2000
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MOSEL VITELIC
V62C18164096
Switching Waveforms (Read Cycle)
Read Cycle 1(1, 2)
tRC
ADDRESS
tAA
OE
tOE
tOLZ
tOHZ(5)
tBHZ
tBLZ
UBE, LBE
tBA
I/O
Read Cycle 2(1, 2, 4, 6)
tRC
ADDRESS
tOH
tAA
tOH
I/O
Read Cycle 3(1, 3, 4, 6)
ADDRESS
tACS
CE1
CE2
tCLZ(5)
tCHZ(5)
I/O
NOTES:
1. WE = VIH.
2. CE1 = VIL. CE2 = VIH.
3. Address valid prior to or coincident with CE transition LOW.
4. OE = VIL.
5. Transition is measured ±500mV from steady state with CL = 5pF. This parameter is guaranteed and not 100% tested.
6. UBE = VIL, LBE = VIL.
V62C18164096 Rev. 1.2 June 2000
7
MOSEL VITELIC
V62C18164096
Switching Waveforms (Write Cycle)
Write Cycle 1 (WE Controlled)(4)
tWC
ADDRESS
tWR(2)
(6)
tCW
CE1
tAW
CE2
tCW(6)
tAS
WE
tWP(1)
OUTPUT
tDW
tWHZ
tDH
INPUT
Write Cycle 2 (CE Controlled)(4)
tWC
ADDRESS
tWR(2)
tCW(6)
(4)
CE1
tAW
tCW(6)
CE2
tAS
WE
OUTPUT
High-Z
tDW
tDH
(5)
INPUT
NOTES:
1. The internal write time of the memory is defined by the overlap of CE1 and CE2 active and WE low. All signals must be active to
initiate and any one signal can terminate a write by going inactive. The data input setup and hold timing should be referenced to
the second transition edge of the signal that terminates the write.
2. tWR is measured from the earlier of CE1 or WE going high, or CE2 going LOW at the end of the write cycle.
3. During this period, I/O pins are in the output state so that the input signals of opposite phase to the outputs must not be applied.
4. OE = VIL or VIH. However it is recommended to keep OE at VIH during write cycle to avoid bus contention.
5. If CE1 is LOW and CE2 is HIGH during this period, I/O pins are in the output state. Then the data input signals of opposite phase
to the outputs must not be applied to them.
6. tCW is measured from CE1 going low or CE2 going HIGH to the end of write.
V62C18164096 Rev. 1.2 June 2000
8
MOSEL VITELIC
V62C18164096
Package Diagrams
48 Ball—8x10 BGA
D
D1
e
6
E1
4
E
5
3
2
SYMBOL
UNIT.MM
A
1.05+0.15
A1
0.25±0.05
b
0.35±.0.05
c
0.30(TYP)
D
10.00±0.10
D1
5.25
E
8.00±0.10
E1
3.75
e
0.75TYP
aaa
0.10
1
A
B
C
D
E
F
H
b
SOLDER BALL
aaa
SIDE VIEW
V62C18164096 Rev. 1.2 June 2000
9
A1
C
A
BOTTOM VIEW
G
MOSEL VITELIC
WORLDWIDE OFFICES
V62C18164096
U.S.A.
TAIWAN
SINGAPORE
UK & IRELAND
3910 NORTH FIRST STREET
SAN JOSE, CA 95134
PHONE: 408-433-6000
FAX: 408-433-0952
7F, NO. 102
MIN-CHUAN E. ROAD, SEC. 3
TAIPEI
PHONE: 886-2-2545-1213
FAX: 886-2-2545-1209
10 ANSON ROAD #23-13
INTERNATIONAL PLAZA
SINGAPORE 079903
PHONE: 65-3231801
FAX: 65-3237013
NO 19 LI HSIN RD.
SCIENCE BASED IND. PARK
HSIN CHU, TAIWAN, R.O.C.
PHONE: 886-3-579-5888
FAX: 886-3-566-5888
JAPAN
SUITE 50, GROVEWOOD
BUSINESS CENTRE
STRATHCLYDE BUSINESS
PARK
BELLSHILL, LANARKSHIRE,
SCOTLAND, ML4 3NQ
PHONE: 01698-748515
FAX: 01698-748516
HONG KONG
19 DAI FU STREET
TAIPO INDUSTRIAL ESTATE
TAIPO, NT, HONG KONG
PHONE: 852-2666-3307
FAX: 852-2770-8011
WBG MARIVE WEST 25F
6, NAKASE 2-CHOME
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CHIBA 261-7125
PHONE: 81-43-299-6000
FAX: 81-43-299-6555
GERMANY
(CONTINENTAL
EUROPE & ISRAEL)
71083 HERRENBERG
BENZSTR. 32
GERMANY
PHONE: +49 7032 2796-0
FAX: +49 7032 2796 22
U.S. SALES OFFICES
NORTHWESTERN
SOUTHWESTERN
3910 NORTH FIRST STREET
SAN JOSE, CA 95134
PHONE: 408-433-6000
FAX: 408-433-0952
302 N. EL CAMINO REAL #200
SAN CLEMENTE, CA 92672
PHONE: 949-361-7873
FAX: 949-361-7807
© Copyright 2000, MOSEL VITELIC Inc.
The information in this document is subject to change without
notice.
MOSEL VITELIC makes no commitment to update or keep current the information contained in this document. No part of this
document may be copied or reproduced in any form or by any
means without the prior written consent of MOSEL-VITELIC.
MOSEL VITELIC
CENTRAL,
NORTHEASTERN &
SOUTHEASTERN
604 FIELDWOOD CIRCLE
RICHARDSON, TX 75081
PHONE: 972-690-1402
FAX: 972-690-0341
6/00
Printed in U.S.A.
MOSEL VITELIC subjects its products to normal quality control
sampling techniques which are intended to provide an assurance
of high quality products suitable for usual commercial applications. MOSEL VITELIC does not do testing appropriate to provide
100% product quality assurance and does not assume any liability for consequential or incidental arising from any use of its products. If such products are to be used in applications in which
personal injury might occur from failure, purchaser must do its
own quality assurance testing appropriate to such applications.
3910 N. First Street, San Jose, CA 95134-1501 Ph: (408) 433-6000 Fax: (408) 433-0952 Tlx: 371-9461