DATA SHEET SILICON TRANSISTOR 2SC3663 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURES PACKAGE DIMENSIONS (in mm) • Low-voltage, low-current, low-noise and high-gain @VCE = 1 V, IC = 250 PA, f = 1.0 GHz GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz 2.8 ± 0.2 0.4 +0.1 –0.05 NF = 3.0 dB TYP. +0.1 0.65–0.15 1.5 B E C ABSOLUTE MAXIMUM RATINGS (TA = 25 qC) Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 8 V Emitter to Base Voltage VEBO 2 V Collector Current IC 5 mA Total Power Dissipation PT 50 mW Junction Temperature Tj 150 qC Storage Temperature Tstg ð65 to +150 qC Marking 0.16 +0.1 –0.06 UNIT PIN CONNECTIONS 0 to 0.1 RATING 0.3 SYMBOL 1.1 to 1.4 PARAMETER 0.4 +0.1 –0.05 • Mini mold package, ideal for hybrid ICs. 0.95 2.9 ± 0.2 cordless phones, etc. • Gold electrode gives high reliability. 0.95 • Ideal for battery drive of pagers, compact radio equipment, E: Emitter B: Base C: Collector Marking: R62 ELECTRICAL CHARACTERISTICS (TA = 25 qC) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB = 5 V, IE = 0 0.1 PA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 0.1 PA DC Current Gain hFE VCE = 1 V, IC = 250 PA, pulse Gain Bandwidth Product Insertion Power Gain Maximum Available Gain fT 50 VCE = 1 V, IC = 1 mA 100 4 GHz 6.5 dB dB °S21e° VCE = 1 V, IC = 1 mA, f = 1 GHz MAG VCE = 1 V, IC = 1 mA, f = 1 GHz 12.5 2 4.0 Noise Figure NF VCE = 1 V, IC = 250 PA, f = 1.0 GHz 3.0 Associated Power Gain GA VCE = 1 V, IC = 250 PA, f = 1.0 GHz 3.5 VCB = 1 V, IE = 0, f = 1.0 MHz 0.4 Collector Capacitance Note Cob 250 4.5 dB dB 0.6 pF Note Measured using 3-pin bridge, with emitter pin connected to the bridge guard pin. Document No. P10406EJ1V0DS00 (1st edition) Date Published August 1997 N Printed in Japan © 1997 2SC3663 hFE CLASSIFICATION RANK Marking hFE K/PNote R62 50 to 250 Note Existing rank classification/newly added rank 2 2SC3663 TYPICAL CHARACTERISTICS (TA = 25 qC) INSERTION POWER GAIN vs. FREQUENCY 10 8 6 4 2 1 0.1 1 IC - Collector Current - mA 5 0 0.1 10 |S21e|2 - Insertion Power Gain - dB MAG - Maximum Available Gain - dB VCE = 1 V IC = 1 mA 20 0 0.1 1 f - Frequency - GHz 10 1 f - Frequency - GHz 10 INSERTION POWER GAIN vs. COLLECTOR CURRENT MAXIMUM AVAILABLE GAIN vs. FREQUENCY 40 VCE = 1 V IC = 1 mA 10 10 VCE = 1 V f = 1.0 GHz 5 0 0.1 20 10 MAG - Maximum Available Gain - dB VCE = 1 V |S21e|2 - Insertion Power Gain - dB fT - Gain Bandwidth Product - GHz GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 0 1 IC - Collector Current - mA 10 GA - Associated Power Gain - dB NF - Noise Figure - dB NOISE FIGURE AND POWER GAIN AT OPUTIMUM NF vs. COLLECTOR CURRENT VCE = 1 V f = 1.0 GHz 10 GA 5 NF 0 0.1 1 IC - Collector Current - mA 10 3 0.4 1 0.0 9 0.37 0.13 0.36 0.04 –80 –90 0.38 0.39 0.12 0.11 –100 0.40 0.10 –11 0 1.4 1.2 1.0 0.9 –70 4 0.3 6 0.1 0.35 0.15 – 1.6 0 1.8 32 18 0. 3 0.3 7 0.1 –6 0.2 12 0 0.7 2.0 0 0.8 0.6 3. 0.6 0 1. ( ) 20 NE G 0.4 0.4 0.0 2 8 0 00 .43 0 –1 .07 30 0 –5 8 2.0 1.6 1.2 1. 0 0.8 1.8 1.4 1.0 50 20 10 5.0 4.0 3.0 2.0 1.8 1.6 1.4 1.2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 1. N 2.0 5 0. 0.6 1.8 1.6 0.2 1.0 0.9 0.8 1.4 0.7 1.6 0.7 1.4 1.2 1.0 0.9 0.8 0.6 1.8 2.0 5 0. E IV AT ( ) 1. 0 0.8 0. 8 0.6 0.1 0.4 0.2 0.3 O 0.37 0.13 0.36 0.04 –80 ( –Z–+–J–XTANCE CO ) MPO 1. 0 R ––– ZO ( ) 3. 0 0 4.0 6.0 0.4 0.6 0.8 0.2 8 0.2 2 –20 0. 0. 31 19 5 R ––– ZO 50 0.4 1 0.0 9 0.40 0.10 –90 0.38 0.39 0.12 0.11 –100 –11 0 3 0.3 7 0.2 0.2 REACTANCE COMPONENT REACTANCE COMPONENT 0.4 0.2 GHz 0.26 0.24 ) 50 20 10 5.0 4.0 3.0 2.0 1.8 1.6 1.4 1.2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 20 0.25 0.25 S22 10 0 0.35 0.15 –70 4 0.3 6 0.1 0 0 . 4 0.0 2 8 0 00 .43 0 –1 .07 30 –1 2 –6 0.1 NE G 0.4 0 1. ( POS 14 ITIV 0 ER EA CT A ––+JX NCE ZO–– CO M PO N 4.0 0.27 0.23 ( 10 –10 E NC TA AC – JX –– RE ––ZO 0.6 0.1 0.4 0.2 0. 4 0.2 6.0 0 0 –4 E IV AT 1. 10 20 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 0. 0. 2 00 9 0.2 0.3 1 –3 0.2 0 0 0 0. 0.6 0. 50 4.0 0.1 0.3 7 3 0.4 1 0.2 9 0.2 0.6 32 18 0. 0.2 600 0. 0.1 6 0.3 4 0 70 0 0.15 0.35 –5 0.6 S11 3. 0.14 0.36 80 4.0 0.1 0 0.2 GHz 0.26 0.24 T NEN PO OM EC NC A T AC – JX –– RE ––ZO 1. 0.25 0.25 44 0. 06 40 0. –1 ) 0. 4 WAVELE NG 8 THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.01 0.0 GENE 7 0.48 3 RA 0.4 0.0W2ARD LOADLECTION COEF F F 0.4 C E O I R E 0.0TOR 3 T N F T IN D 6 7 0.0GTHS ANGLE O E 4 G 0.4 REE 0 .4 0 LEN –160 4 S E 0 V 0.0 6 0. WA 5 15 0.4 5 0 0.4 5 5 0 1 – 5 0.0 0 0.24 0.26 0.8 30 WAVELE NG 0. 0.23 0.27 0.4 40 0.2 1.2 1.0 0.8 0.6 0 0.2 0 0.3 0.1 3. 2 T EN 2.0 10 0.3 0.8 0.2 0.13 0.37 6.0 0.6 6.0 0.4 0.2 7 0.2 0.23 8 0.2 2 –20 90 0. 0. 06 44 2.0 5 0. 0.6 1.8 50 –10 0.12 0.38 1.6 0.2 1.0 0.9 0.8 1.4 0.7 0.1 0.3 7 3 19 0. 31 0. 4 0.2 600 0 0.6 1.8.8 0 1.6 1.4 0.1 6 0.3 4 0. 0. 31 19 0. 0.11 0.39 100 0 07 43 0. 0 13 –4 0. 8 0.0 2 0.4 20 1 0.10 0.40 110 70 10 0.4 0.15 0.35 8 20 0.1 0.14 0.36 80 0. 2 00 9 0.2 0.3 1 –3 0.2 0 0 0 9 0.0 1 0.4 0.13 0.37 0.2 4 90 1 0.2 9 0.2 30 0.3 0. T EN 40 4 0.3 0.12 0.38 0 0 .2 0 0 .3 0.2 0. 43 0 13 0 0.11 0.39 100 20 0. 12 0.10 0.40 110 50 07 8 0.0 2 0.4 9 0.0 1 0.4 19 0. 31 0. THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.01 0.0 GENE 7 0.48 3 RA 0.4 0.0W2ARD LOADLECTION COEF F F 0.4 C E O I R E 0.0TOR 3 T N F T IN D 6 7 0.0GTHS ANGLE O E 4 G 0.4 REE 0.4 0 LEN –160 4 S E 0 V 0.0 6 0. WA 5 15 0.4 5 0 0.4 5 5 0 1 – 5 0.0 0. 44 POS . T 0 06 0.1 N 1 0 06 40 E ITIV 40 .44 ON ER MP 0. –1 EA CO C 2SC3663 0. 0. 18 32 VCE = 1 V IC = 1 mA 50 0. 0. 18 32 VCE = 1 V IC = 1 mA 50 2SC3663 [MEMO] 5 2SC3663 [MEMO] 6 2SC3663 [MEMO] 7 2SC3663 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5