NEC 2SC5180

DATA SHEET
SILICON TRANSISTOR
2SC5180
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low current consumption and high gain
PACKAGE DIMENSIONS
(Units : mm)
S21e = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
2
S21e 2 = 11 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
2.1 ± 0.2
• Supper Mini-Mold package
0.3 +0.1
–0.05
3
(1.3)
0.3 +0.1
–0.05
4
0.60
0.65
1
Embossed tape, 8 mm wide, pins No. 1
(collector) and No. 2 (emitter) facing the
perforations
0.4 +0.1
–0.05
2SC5180–T2
0.3
3 000 units/reel
Embossed tape, 8 mm wide, pins No. 3
(base) and No. 4 (emitter) facing the
perforations
(1.25)
2SC5180–T1
ARRANGEMENT
2.0 ± 0.2
QUANTITY
T84
PART
NUMBER
0.3 +0.1
–0.05
ORDERING INFORMATION
2
1.25 ± 0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage
VCBO
5
V
Collector to Emitter Voltage
VCEO
3
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
IC
10
mA
PIN CONNECTIONS
Total Power Dissipation
PT
30
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
1. Collector
2. Emitter
3. Base
4. Emitter
Caution;
0.15 +0.1
–0.05
in batches of 50).
0 to 0.1
0.9 ± 0.1
* Contact your NEC sales representatives to order samples for evaluation (available
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12104EJ2V0DS00 (2nd edition)
(Previous No. TC-2477)
Date Published December 1996 N
Printed in Japan
©
1994
2SC5180
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Collector Cutoff Current
ICBO
100
nA
VCB = 5 V, IE = 0
Emitter Cutoff Current
IEBO
100
nA
VEB = 1 V, IC = 0
DC Current Gain
hFE
70
VCE = 2 V, IC = 7 mA*1
140
Insertion Power Gain (1)
S21e
2
10
12
dB
V CE = 2 V, I C = 7 mA, f = 2 GHz
Insertion Power Gain (2)
S21e
2
8.5
11
dB
V CE = 1 V, I C = 5 mA, f = 2 GHz
Noise Figure (1)
NF
1.5
2.0
dB
V CE = 2 V, I C = 3 mA, f = 2 GHz
Noise Figure (2)
NF
1.5
2.0
dB
V CE = 1 V, I C = 3 mA, f = 2 GHz
Gain Bandwidth Product (1)
fT
12
15.5
GHz
V CE = 2 V, I C = 7 mA, f = 2 GHz
Gain Bandwidth Product (2)
fT
10
13
GHz
V CE = 1 V, I C = 5 mA, f = 2 GHz
pF
VCB = 2 V, IE = 0 mA, f = 1 MHz*2
Feedback Capacitance
Cre
0.3
0.5
< 350 µs, duty cycle <
* 1 : Measured with pulses : Pulse width =
= 2 %, pulsed
* 2 : Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal of the bridge.
hFE class
2
Class
FB
Marking
T84
hFE
70 to 140
2SC5180
CHARACTERISTICS CURVES (TA = 25 °C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
50
VCE = 2 V
Passive
air cooling
100
30 mW
0
50
100
IC – Collector Current – mA
PT – Total Power Dissipation – mW
200
150
30
20
10
0.5
0
VBE – Base to Emitter Voltage – V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
hFE – DC Current Gain
20
200 µ A
180 µ A
160 µ A
140 µ A
120 µ A
100 µ A
80 µ A
60 µ A
40 µ A
IB = 20 µ A
15
10
5
0
1.0
2.0
200
VCE = 2 V
100
50
VCE = 1 V
20
10
3.0
1
10
20
50
100
14
18
– Insertion Power Gain – dB
f = 2 GHz
16
2V
14
VCE = 1 V
10
2
8
6
f = 2 GHz
VCE = 2 V
12
VCE = 1 V
10
8
6
S21e
fT – Gain Bandwidth Product – GHz
5
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
GAIN BAND WIDTH PRODUCT
vs. COLLECTOR CURRENT
12
2
IC – Collector Current – mA
VCE – Collector to Emitter Voltage – V
4
1.0
TA – Ambient Temperature – °C
25
IC – Collector Current – mA
40
4
1
2
5
IC – Collector Current – mA
10
1
2
5
10
IC – Collector Current – mA
3
2SC5180
NOISE FIGURE vs.
COLLECTOR CURRENT
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
0.5
4
Cre – Feedback Capacitance – pF
NF – Noise Figure – dB
f = 2 GHz
3
VCE = 1 V
VCE = 2 V
2
1
0
1
2
5
10
20
IC – Collector Current – mA
4
100
f = 1 MHz
0.4
0.3
0.2
0.1
0
1.0
2.0
3.0
4.0
VCB – Collector to Base Voltage – V
5.0
2SC5180
S–PARAMETER
VCE = 1 V, IC = 1 mA, ZO = 50 Ω
FREQUENCY
S11
S21
S12
S22
MHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
0.916
0.816
0.741
0.691
0.628
0.558
0.508
0.444
0.386
–28.0
–36.9
–47.1
–55.8
–63.3
–72.3
–80.9
–87.8
–94.3
3.247
3.092
2.929
2.864
2.762
2.590
2.505
2.293
2.111
147.1
136.2
125.5
116.5
109.6
100.9
93.4
88.1
81.8
0.074
0.111
0.140
0.158
0.179
0.195
0.199
0.196
0.201
65.6
58.6
54.4
52.2
48.2
44.8
43.7
39.5
35.8
0.960
0.887
0.810
0.788
0.744
0.692
0.647
0.602
0.575
–21.2
–26.2
–32.8
–39.3
–44.5
–49.2
–54.7
–58.2
–61.2
VCE = 1 V, IC = 3 mA, ZO = 50 Ω
FREQUENCY
S11
S21
S12
S22
MHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
0.694
0.557
0.463
0.394
0.325
0.269
0.226
0.181
0.146
–43.6
–54.5
–63.1
–70.7
–78.9
–88.2
–96.9
–103.5
–111.9
6.614
5.730
5.054
4.628
4.123
3.744
3.488
3.085
2.776
129.7
117.1
106.4
99.0
92.2
84.3
79.4
75.5
70.5
0.063
0.090
0.113
0.125
0.143
0.157
0.160
0.166
0.174
57.9
54.4
52.6
54.2
52.5
51.5
52.5
50.8
48.1
0.819
0.707
0.609
0.575
0.526
0.478
0.441
0.412
0.401
–30.4
–35.6
–41.1
–45.5
–48.8
–52.5
–57.0
–57.9
–60.0
VCE = 1 V, IC = 5 mA, ZO = 50 Ω
FREQUENCY
S11
S21
S12
S22
MHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
0.556
0.430
0.338
0.271
0.217
0.171
0.137
0.100
0.079
–51.5
–61.6
–68.2
–75.3
–84.1
–94.6
–104.4
–114.7
–125.3
7.925
6.573
5.644
5.047
4.409
3.985
3.674
3.229
2.897
120.8
108.7
98.8
92.4
86.0
78.8
74.9
71.4
66.9
0.055
0.083
0.102
0.117
0.133
0.148
0.155
0.162
0.173
57.5
55.0
54.0
57.7
56.5
55.9
57.4
55.7
53.0
0.729
0.614
0.527
0.498
0.451
0.414
0.382
0.361
0.357
–33.5
–37.4
–41.0
–44.6
–47.5
–50.0
–53.9
–55.0
–57.2
VCE = 1 V, IC = 7 mA, ZO = 50 Ω
FREQUENCY
S11
S21
S12
S22
MHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
0.455
0.335
0.252
0.194
0.148
0.114
0.087
0.062
0.051
–57.2
–67.4
–73.2
–80.5
–91.1
–105.9
–119.5
–140.8
–160.7
8.518
6.873
5.825
5.131
4.447
4.018
3.682
3.230
2.893
114.4
103.1
93.9
88.3
82.0
75.3
71.9
68.6
64.4
0.051
0.075
0.095
0.113
0.129
0.145
0.152
0.161
0.170
56.0
55.1
56.7
59.7
58.7
58.7
60.6
58.1
55.7
0.657
0.557
0.480
0.453
0.417
0.385
0.357
0.341
0.342
–34.1
–36.6
–39.2
–41.8
–44.6
–46.8
–50.6
–51.5
–54.0
5
2SC5180
VCE = 1 V, IC = 10 mA, ZO = 50 Ω
FREQUENCY
S11
S21
S12
S22
MHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
0.359
0.255
0.177
0.127
0.098
0.081
0.072
0.070
0.074
–65.9
–78.2
–83.8
–96.6
–115.6
–141.9
–162.7
170.9
157.1
8.500
6.731
5.648
4.927
4.251
3.839
3.504
3.072
2.748
108.9
98.1
89.6
84.4
78.2
71.9
68.8
65.8
61.5
0.048
0.071
0.090
0.109
0.125
0.143
0.150
0.157
0.167
54.8
56.3
56.8
61.7
61.4
61.2
62.1
60.3
57.2
0.603
0.516
0.449
0.431
0.400
0.377
0.351
0.338
0.342
–33.1
–34.4
–35.9
–38.2
–40.5
–42.8
–46.1
–47.5
–50.4
VCE = 2 V, IC = 1 mA, ZO = 50 Ω
FREQUENCY
S11
S21
S12
S22
MHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
0.927
0.827
0.758
0.712
0.653
0.581
0.530
0.469
0.410
–26.3
–34.2
–43.7
–52.2
–59.1
–67.5
–75.7
–82.1
–87.5
3.263
3.122
2.962
2.910
2.825
2.657
2.578
2.368
2.184
148.6
138.1
127.7
118.9
112.3
103.8
96.3
91.0
84.7
0.065
0.101
0.129
0.146
0.165
0.181
0.185
0.184
0.188
64.5
59.7
54.9
54.2
50.6
47.3
46.0
41.5
38.2
0.968
0.903
0.828
0.808
0.769
0.723
0.673
0.630
0.607
–19.5
–24.1
–30.3
–36.5
–41.3
–46.0
–51.3
–54.7
–57.4
VCE = 2 V, IC = 3 mA, ZO = 50 Ω
FREQUENCY
S11
S21
S12
S22
MHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
0.727
0.587
0.490
0.425
0.354
0.295
0.251
0.203
0.167
–39.7
–49.7
–57.4
–64.5
–70.8
–78.5
–85.1
–89.4
–93.9
6.761
5.910
5.229
4.812
4.314
3.919
3.662
3.243
2.924
131.7
119.4
108.8
101.3
94.8
86.9
81.8
77.9
73.0
0.057
0.084
0.104
0.120
0.135
0.148
0.151
0.156
0.164
58.1
55.8
54.2
55.7
55.3
54.1
54.8
52.9
50.9
0.841
0.737
0.645
0.608
0.562
0.517
0.478
0.449
0.441
–27.8
–32.4
–37.5
–41.8
–45.1
–48.3
–52.4
–53.6
–55.6
VCE = 2 V, IC = 5 mA, ZO = 50 Ω
FREQUENCY
6
S11
S21
S12
S22
MHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
0.592
0.457
0.369
0.305
0.249
0.198
0.160
0.121
–46.3
–55.1
–60.0
–66.2
–72.3
–79.2
–85.2
–89.1
8.189
6.849
5.900
5.303
4.651
4.202
3.888
3.419
122.9
110.9
101.1
94.7
88.4
81.2
77.2
73.8
0.052
0.074
0.096
0.111
0.126
0.139
0.146
0.151
59.4
56.6
54.1
58.0
58.2
58.2
59.2
57.5
0.763
0.655
0.564
0.533
0.495
0.460
0.425
0.404
–30.6
–33.8
–37.6
–40.7
–43.3
–45.6
–59.3
–50.4
2200.00
0.096
–92.3
3.069
69.3
0.161
54.4
0.403
–52.2
2SC5180
VCE = 2 V, IC = 7 mA, ZO = 50 Ω
FREQUENCY
S11
S21
S12
S22
MHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
0.489
0.371
0.287
0.233
0.181
0.138
0.105
0.072
0.052
–50.8
–58.8
–62.3
–67.2
–72.6
–80.1
–86.5
–91.2
–93.0
8.917
7.266
6.166
5.456
4.743
4.283
3.937
3.456
3.097
116.7
105.4
96.2
90.6
84.5
77.7
74.2
71.1
66.9
0.045
0.070
0.090
0.106
0.122
0.137
0.143
0.149
0.159
58.5
57.0
57.4
61.2
62.0
61.2
62.8
60.2
57.3
0.701
0.601
0.523
0.501
0.465
0.436
0.404
0.389
0.391
–31.1
–33.3
–35.7
–38.3
–40.4
–42.7
–45.9
–47.1
–49.2
VCE = 2 V, IC = 10 mA, ZO = 50 Ω
FREQUENCY
S11
S21
S12
S22
MHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
0.404
0.298
0.221
0.169
0.128
0.089
0.062
0.035
0.021
–55.4
–62.9
–65.2
–69.5
–76.3
–86.1
–96.1
–112.1
–121.3
9.236
7.374
6.206
5.441
4.701
4.244
3.888
3.408
3.050
111.8
101.0
92.5
87.4
81.4
75.0
71.9
68.9
64.8
0.039
0.064
0.087
0.102
0.119
0.134
0.140
0.147
0.156
55.3
57.2
60.1
63.5
63.3
63.5
64.0
62.4
59.6
0.660
0.569
0.501
0.483
0.456
0.430
0.400
0.388
0.393
–30.2
–31.4
–33.0
–35.3
–37.4
–39.5
–42.5
–43.8
–46.2
7
2SC5180
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
2