DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK134B RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES V Gate1 to Source Voltage VG1S ±8 Gate2 to Source Voltage VG2S ±8 (±10)*1 V Gate1 to Drain Voltage VG1D 18 V Gate2 to Drain Voltage VG2D 18 V Drain Current ID 25 mA Total Power Dissipation PD 200 mW Channel Temperature Tch 125 °C Storage Temperature Tstg –55 to +125 °C *1 : RL ≥ 10 kΩ 3 0.95 (1.9) V (±10)*1 4 18 1 VDSX 0.6 +0.1 – 0.05 Drain to Source Voltage (1.8) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) 0.85 4 Pins Mini Mold (EIAJ: SC-61) 1.5 +0.2 – 0.1 5o 5o 0.8 • Surface Mount Package : 2.9±0.2 Embossed Type Taping 1.1 +0.2 – 0.1 • Automatically Mounting : 2 • Suitable for use as RF amplifier in UHF TV tuner. 0.4 +0.1 – 0.05 2.8 +0.2 – 0.3 5o 0.4 +0.1 – 0.05 NF = 2.4 dB TYP. (@ = 900 MHz) 0.16 +0.1 – 0.05 • Low Noise Figure : PACKAGE DIMENSIONS (Unit : mm) 0 to 0.1 Gps = 23.0 dB TYP. (@ = 900 MHz) 0.4 +0.1 – 0.05 • High Power Gain : 5o PIN CONNECTIONS 1. Source 2. Drain 3. Gate2 4. Gate1 PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage fields. Document No. P10566EJ2V0DS00 (2nd edition) (Previous No. TD-2398) Date Published August 1995 P Printed in Japan © 1993 3SK134B ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC SYMBOL MIN. Drain to Source Breakdown Voltage BVDSX 18 Drain Current IDSX 0.4 Gate1 to Source Cutoff Voltage MAX. UNIT V TEST CONDITIONS VG1S = VG2S = –2 V, ID = 10 µA 8.0 mA VG1S(off) –2.0 V VDS = 10 V, VG2S = 4 V, ID = 10 µA Gate2 to Source Cutoff Voltage VG2SS(off) –0.7 V VDS = 10 V, VG1S = 4 V, ID = 10 µA Gate1 Reverse Current IG1SS ±20 nA VDS = VG2S = 0, VG1S = ±8 V Gate2 Reverse Current IG2SS ±20 nA VDS = VG1S = 0, VG2S = ±8 V Forward Transfer Admittance |yfs| 25.0 29.0 35.0 mS VDS = 10 V, VG2S = 4 V, ID = 10 mA f = 1 kHz Input Capacitance Ciss 1.5 2.5 3.5 pF Output Capacitance Coss 0.6 1.1 1.6 pF Reverse Transfer Capacitance Crss 0.02 0.03 pF Power Gain Gps Noise Figure NF IDSX Classification Rank 2 TYP. U55/UEE U56/UEF Marking U55 U56 IDSX (mA) 0.4 to 5.0 3.0 to 8.0 20.0 23.0 2.4 3.5 VDS = 10 V, VG2S = 4 V, VG1S = 0.5 V VDS = 10 V, VG2S = 4 V, ID = 10 mA f = 1 MHz dB VDS = 10 V, VG2S = 4 V, ID = 10 mA dB f = 900 MHz 3SK134B TYPICAL CHARACTERISTICS (TA = 25 ˚C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 25 Free air ID – Drain Current – mA 300 200 100 0 20 ID – Drain Current – mA VG2S = 4 V 25 50 100 75 1.1 V 15 0.9 V 10 0.8 V 5 5 15 10 20 VDS – Drain to Source Voltage – V DRAIN CURRENT vs GATE1 TO SOURCE VOLTAGE FORWARD TRANSFER ADMITTANCE vs. GATE1 TO SOURCE VOLTAGE VDS = 10 V VG2S = 5 V 3V 2V 10 0 1V 2.0 1.0 40 VDS = 10 V f = 1 kHz VG2S = 5 V 30 3V 4V 20 2V 10 1V 0 VG1S – Gate1 to Source Voltage – V 2.0 1.0 VG1S – Gate1 to Source Voltage – V INPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 5.0 40 VDS = 10 V f = 1 kHz VG2S = 4 V Ciss – Input Capacitance – pF |yfs| – Forward Transfer Admittance – mS 1.0 V TA – Ambient Temperature – °C 4V 30 20 10 0 VG1S = 1.2 V 20 0 125 |yfs| – Forward Transfer Admittance – mS PD – Total Power Dissipation – mW 400 4 8 12 ID – Drain Current – mA 16 20 ID = 10 mA (at VDS = 10 V VG2S = 4 V) 4.0 f = 1 MHz 3.0 2.0 1.0 0 –1.0 0 1.0 2.0 3.0 4.0 5.0 VG2S – Gate2 to Source Voltage – V 3 3SK134B POWER GAIN AND NOISE FIGURE vs. GATE2 TO SOURCE VOLTAGE OUTPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE 20 Gps 1.0 0.5 Gps – Power Gain – dB 1.5 10 ID = 10 mA (at VDS = 10 V VG2S = 4 V) f = 1 MHz NF – Noise Figure – dB Coss – Output Capacitance – pF 2.0 5 10 0 NF –10 –20 0 –1.0 0 1.0 2.0 3.0 0 4.0 –2.0 VG2S – Gate2 to Source Voltage – V 0 2.0 ID = 10 mA (at VDS = 10 V VG2S = 4 V) f = 900 MHz 4.0 6.0 8.0 VG2S – Gate2 to Source Voltage – V 900 MHz Gps AND NF TEST CIRCUIT VG2S (3 V) 1 000 pF 47 kΩ 1 000 pF to 10 pF to 10 pF to 10 pF INPUT 50 Ω OUTPUT 50 Ω to 10 pF L2 L1 47 kΩ 1 000 pF RFC 1 000 pF L1, L2; 35 × 5 × 0.2 mm VG1S 4 VDD (6 V) 3SK134B No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2