PRELIMINARY DATA SHEET GaAs MES FET NE6500496 4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PACKAGE DIMENSION (UNIT: mm) DESCRIPTION The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. 1.0 ± 0.1 To reduce thermal resistance, the device has a PHS (Plated Heat Sink) structure. FEATURES 4.0 MIN BOTHLEADS SOURCE GATE φ 2.2 ±0.3 2 SLACES 4.3 ±0.2 4.0 • Class A operation • High output power: 36 dBm (typ) DRAIN • High gain: 11.5 dB (typ) • High power added efficiency: 45 % (typ) 0.6 ±0.1 5.2 ±0.3 11.0 ±0.3 15.0 ±0.3 • Hermetically sealed ceramic package 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) VDSX 15 V Gate to Drain Voltage VGDX –18 V Gate to Source Voltage VGSX –12 V Drain to Source Voltage Drain Current ID 4.5 A Gate Current IG 25 mA Total Power Dissipation PT(*) 25 W Channel Temperature Tch 175 ˚C Storage Temperature Tstg –65 to +175 ˚C Temperature Cycling T∞ –40 to +120 ˚C 0.2 MAX. 1.7 ±0.15 5.0 MAX. 6.0 ±0.2 1.2 * TC = 25 ˚C Caution Please handle this device at a static-free workstation, because this is an electrostatic sensitive device. Document No. P10971EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 NE6500496 MAXIMUM OPERATION RANDGE CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT Drain to Source Voltage VDS – 10 10 V Channel Temperature Tch – – 130 ˚C Gcomp – – 3 dBcomp Rg – – 200 Ω Input Power Gate Resistance ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT Idss 1.0 2.3 3.5 A Vds = 1.5 V, Vgs = 0 V Pinch-off Voltage VP –3.5 –2.0 –0.5 V Vds = 2.5 V, Ids = 15 mA Transconductance gm – 1300 – mS Thermal Resistance Rth – 6.0 6.5 ˚C/W Saturated Drain Current TEST CONDITIONS Vds = 2.5 V, Ids = 1 A channel to case PERFORMANCE SPECIFICATIONS (TA = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Output Power Pout 35.5 36.0 – dBm Gate to Source Current Igs –5 – 5 mA Power Added Efficiency ηadd f = 2.3 GHz, Vds = 10 V Ids ≤ 0.4 A, Pin = 26.0 dBm Rg = 200 Ω – 45 – % GL 11.0 11.5 – dB Linear Gain * The other are the same as the above conditions. 2 Pin ≤ 20 dBm (*) NE6500496 TYPICAL CHARACTERISTICS (TA = 25 ˚C) Pout - Output Power - dBm Pout (dBm) 40 OUTPUT POWER vs. INPUT POWER VDS = 10 V, IDS = 0.4 A Id (mA) 2000 Pout 1600 37 Id 34 1200 31 800 28 400 25 15 18 21 24 27 Pin - Input Power - dBm 30 0 3 NE6500496 S-PARAMETER VDS = 9.0 V, IDS = 400 mA, VGS = –1.619 V, IG = 0.0 mA FREQUENCY S11 GHz MAG 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 2.600 2.700 2.800 2.900 3.000 3.500 4.000 4.500 5.000 4 0.978 0.957 0.951 0.949 0.947 0.947 0.946 0.946 0.946 0.945 0.945 0.946 0.945 0.944 0.945 0.944 0.943 0.944 0.943 0.944 0.944 0.945 0.945 0.945 0.944 0.944 0.945 0.947 0.947 0.946 0.947 0.950 0.941 0.933 S21 S12 S22 ANG MAG ANG MAG ANG MAG ANG –80.0 –118.9 –137.8 –148.5 –155.4 –160.2 –163.9 –166.8 –169.2 –171.2 –173.1 –174.5 –175.9 –177.1 –178.2 –179.4 179.6 178.6 177.7 176.8 175.9 175.2 174.3 173.5 172.7 172.0 171.2 170.4 169.6 168.7 164.9 160.5 155.3 149.6 17.314 11.458 8.252 6.388 5.188 4.368 3.769 3.319 2.963 2.679 2.438 2.251 2.087 1.947 1.828 1.720 1.627 1.547 1.468 1.404 1.345 1.296 1.245 1.201 1.163 1.131 1.087 1.054 1.028 1.008 0.901 0.840 0.810 0.795 137.4 116.5 105.7 98.8 93.9 90.0 86.6 83.6 80.8 78.2 75.5 73.4 71.2 69.0 67.0 64.7 62.6 60.5 58.7 56.4 54.6 52.7 50.8 48.6 46.8 45.2 43.7 41.6 39.6 37.7 29.5 20.9 11.9 1.5 0.010 0.015 0.016 0.016 0.017 0.017 0.017 0.018 0.018 0.019 0.020 0.020 0.021 0.021 0.022 0.023 0.024 0.024 0.025 0.026 0.027 0.028 0.030 0.031 0.031 0.034 0.035 0.036 0.037 0.039 0.046 0.056 0.059 0.069 60.2 36.4 30.0 29.0 29.1 27.5 29.5 31.0 32.8 33.7 34.9 35.7 36.8 38.6 39.5 40.5 41.8 41.8 43.8 43.8 45.8 46.4 47.4 45.8 47.2 49.1 48.7 47.5 46.7 47.2 46.8 41.3 37.4 33.4 0.612 0.667 0.687 0.695 0.700 0.704 0.705 0.707 0.709 0.710 0.711 0.711 0.714 0.715 0.716 0.715 0.716 0.721 0.718 0.719 0.722 0.728 0.725 0.726 0.734 0.742 0.737 0.738 0.745 0.757 0.766 0.771 0.776 0.792 –172.8 –175.2 –177.6 –179.7 178.8 177.4 176.2 175.1 174.0 173.0 172.2 171.2 170.3 169.4 168.5 167.5 166.2 165.4 164.5 163.2 162.0 161.1 160.4 158.7 157.4 156.8 156.1 154.5 153.3 152.3 148.8 144.2 138.0 130.8 NE6500496 VDS = 10.0 V, IDS = 400 mA, VGS = –1.662 V, IG = 0.0 mA FREQUENCY S11 GHz MAG 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 1.900 2.000 2.100 2.200 2.300 2.400 2.500 2.600 2.700 2.800 2.900 3.000 3.500 4.000 4.500 5.000 0.975 0.956 0.951 0.949 0.947 0.946 0.946 0.945 0.945 0.945 0.944 0.945 0.944 0.943 0.944 0.943 0.943 0.943 0.943 0.944 0.943 0.945 0.944 0.944 0.944 0.944 0.945 0.946 0.947 0.945 0.947 0.950 0.940 0.933 S21 ANG –80.1 –118.9 –137.7 –148.4 –155.3 –160.1 –163.8 –166.8 –169.1 –171.2 –173.1 –174.5 –175.8 –177.1 –178.2 –179.4 179.6 178.6 177.7 176.8 176.0 175.2 174.3 173.5 172.7 171.9 171.2 170.4 169.6 168.7 165.0 160.5 155.3 149.6 S12 S22 MAG ANG MAG ANG MAG ANG 17.360 11.506 8.292 6.420 5.212 4.388 3.786 3.333 2.977 2.691 2.448 2.260 2.096 1.955 1.834 1.726 1.632 1.552 1.474 1.408 1.348 1.299 1.248 1.203 1.166 1.132 1.089 1.055 1.029 1.008 0.901 0.838 0.806 0.792 137.5 116.5 105.6 98.7 93.8 89.8 86.4 83.4 80.5 77.9 75.2 73.0 70.8 68.6 66.5 64.2 62.1 60.0 58.1 55.8 53.9 52.0 50.2 48.0 46.2 44.5 42.9 40.8 38.9 36.9 28.7 20.0 10.9 0.4 0.011 0.015 0.016 0.016 0.017 0.017 0.018 0.018 0.018 0.019 0.020 0.020 0.021 0.021 0.022 0.022 0.024 0.024 0.025 0.026 0.027 0.028 0.030 0.031 0.031 0.033 0.034 0.036 0.037 0.039 0.046 0.056 0.059 0.068 55.3 39.8 30.2 28.9 26.7 26.5 28.9 30.9 32.2 32.4 32.7 35.5 36.6 37.8 38.5 40.0 41.6 41.7 44.3 43.4 45.6 46.1 47.1 46.0 46.0 47.5 48.6 46.6 46.8 46.7 47.0 41.3 37.3 34.0 0.601 0.657 0.678 0.687 0.692 0.695 0.697 0.698 0.700 0.702 0.703 0.703 0.706 0.708 0.708 0.707 0.710 0.714 0.711 0.712 0.716 0.721 0.719 0.720 0.728 0.736 0.733 0.732 0.741 0.753 0.761 0.769 0.775 0.791 –172.5 –175.0 –177.5 –179.5 178.9 177.7 176.4 175.3 174.2 173.3 172.4 171.4 170.5 169.7 168.9 167.8 166.6 165.7 164.9 163.5 162.4 161.5 160.8 159.1 157.9 157.2 156.6 155.0 153.7 152.9 149.2 144.6 138.6 131.2 5 NE6500496 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2