DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS FEATURES in millimeters • Suitable for use as RF amplifier in UHF TV tuner. 4 1 –0.06 0.16 +0.1 +0.1 5˚ 0.4–0.05 5˚ 5˚ 0 to 0.1 V V V mA mW ˚C ˚C 0.6+0.1 –0.05 20 ±10 ±10 25 200 150 –65 to +150 *RL ≥ 10 kΩ 0.4+0.1 –0.05 0.8 VDSX VG1S* VG2S* ID PT Tch Tstg 2.9±0.2 (1.9) 0.95 0.95 Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature +0.2 1.1–0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) 3 2 : 2.7 dB TYP. 1.5+0.2 –0.1 (1.9) • High Gps : 18 dB TYP. • Low NF 2.8+0.2 –0.3 0.4+0.1 –0.05 • Low Crss : 0.02 pF TYP. 5˚ 1. Source 2. Drain 3. Gate 2 4. Gate 1 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL MIN. Drain to Source Breakdown Voltage BVDSX 20 IDSS 0.01 Drain Current TYP. MAX. UNIT V 6 mA TEST CONDITIONS VG1S = VG2S = –2 V, ID = 10 µA VDS = 5 V, VG2S = 4 V, VG1S = 0 Gate1 to Source Cutoff Voltage VG1S(off) –2.0 V VDS = 10 V, VG2S = 4 V, ID = 10 µA Gate2 to Source Cutoff Voltage VG2S(off) –0.7 V VDS = 10 V, VG1S = 4 V, ID = 10 µA Gate1 Reverse Current IG1SS ±20 nA VDS = 0, VG1S = ±8 V, VG2S = 0 Gate2 Reverse Current IG2SS ±20 nA VDS = 0, VG2S = ±8 V, VG1S = 0 Forward Transter Admittance | yfs | 14 ms VDS = 5 V, VG2S = 4 V, ID = 10 mA, f = 1 kHz Input Capacitance Ciss 1.5 2.5 pF VDS = 10 V, VG2S = 4 V, Output capacitance Coss 0.5 1.0 1.5 pF ID = 10 mA, f = 1 MHz Reverse Transfer Capacitance Crss 0.02 0.03 pF Power Gain Gps* Noise Figure NF* 16 18 18 2.7 4.5 dB VDS = 10 V, VG2S = 4 V, ID = 10 mA, dB f = 900 MHz IDSS Classification Class Marking IDSS L/LS* K/KS* U65 U66 0.01 to 2 1 to 6 Document No. P10411EJ1V0DS00 (1st edition) (Previous No. TN-1758) Date Published August 1995 P Printed in Japan * Old specification/New specification © 1995 3SK135A TYPICAL CHARACTERISTICS (TA = 25 ˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 5 4 400 ID – Drain Current – mA PT – Total Power Dissipation – mW VG2S = 4 V 300 200 VG1S = 0 3 2 –0.1 V 1 100 –0.2 V –0.3 V –0.4 V 0 25 75 50 100 125 DRAIN CURRENT vs. GATE 1 TO SOURCE VOLTAGE FORWARD TRANSFER ADMITTANCE vs. GATE 1 TO SOURCE VOLTAGE | yfs | – Forward Transter Admittance – mS VDS = 10 V |D – Drain Current – mA 20 15 6V 10 2V 4V 5 1V VG2S = 0 0 –1.0 0 6V VDS = 10 V f = 1 MHz 4V 20 2V 15 1V 10 5 VG2S = 0 0 +1.0 VG1S – Gate1 to Source Voltage – V VG1S – Gate1 to Source Voltage – V INPUT CAPACITANCE vs. DRAIN CURRENT OUTPUT CAPACITANCE vs. GATE 2 TO SOURCE VOLTAGE Coss – Output Capacitance – pF Ciss – Input Capacitance – pF 25 0 –1.0 +1.0 VDS = 10 V f = 1 MHz 4 3 ID = 10 mA at VG2S = 4 V 2 ID = 5 mA at VG2S = 4 V 1 0 1.0 2.0 3.0 ID – Drain Current – mA 2 20 VDS – Drain to Source Voltage – V 25 0 –1.0 10 0 TA – Ambient Temperature – ˚C 4.0 VDS = 10 V f = 1 MHz 2 1 ID = 10 mA at VG2S = 4 V ID = 5 mA at VG2S = 4 V 0 –1.0 0 1.0 2.0 3.0 VG2S – Gate2 to Source Voltage – V 4.0 3SK135A POWER GAIN AND NOISE FIGURE vs. GATE2 TO SOURCE VOLTAGE Gps 20 6 4 Gps – Power Gain – dB NF – Noise Figure – dB 8 10 0 NF –10 2 –20 f = 900 MHz IDS = 10 mA (at VDS = 10 V, VG2S = 4 V) IDS = 10 mA (at VDS = 5 V, VG2S = 3 V) 0 –2.0 0 2.0 4.0 6.0 8.0 VG2S – Gate2 to Source Voltage – V 3 3SK135A S-PARAMETER, Y-PARAMETER S1, Y1 CONDITION VDS = 10 V VG2S = 4 V IDS = 10 mA S1-MAG & ANGL FREQ. 50 100 200 300 400 500 600 700 800 900 1000 1.023 0.989 0.966 0.923 0.871 0.841 0.776 0.676 0.631 0.575 0.537 Yl-MAG & ANGL FREQ. 50 100 200 300 400 500 600 700 800 900 1000 S2, Y2 CONDITION VDS = 10 V VG2S = 4 V IDS = 5 mA 4 –2 –8 –11 –22 –23 –33 –34 –41 –43 –47 –49 0.405 1.382 1.937 3.962 4.327 6.197 6.589 8.151 8.287 8.404 8.085 1.820 1.758 1.778 1.758 1.758 1.718 1.738 1.718 1.698 1.660 1.567 0.411 1.385 1.940 3.946 4.259 6.358 6.724 8.534 8.961 9.289 8.676 12 173 165 153 139 128 113 101 88 76 64 48 0.002 0.002 0.003 0.003 0.008 0.017 0.034 0.058 0.089 0.130 0.172 21 125 85 80 77 69 71 62 53 47 44 46 17.780 17.940 18.399 19.044 20.003 20.688 21.986 23.697 24.190 23.916 22.726 11 1.023 0.989 0.966 0.933 0.891 0.851 0.794 0.684 0.624 0.556 0.501 Y2-MAG & ANGL FREQ. 50 100 200 300 400 500 600 700 800 900 1000 21 11 S2-MAG & ANGL FREQ. 50 100 200 300 400 500 600 700 800 900 1000 11 –6 –9 –18 –26 –36 –45 –58 –69 –81 –94 –103 1.567 1.531 1.549 1.531 1.567 1.531 1.567 1.549 1.549 1.531 1.462 11 0.020 0.024 0.027 0.033 0.086 0.205 0.434 0.803 1.269 1.878 2.492 15.215 15.540 16.026 16.402 17.533 18.279 19.600 21.366 22.388 22.717 21.911 1.023 0.977 0.977 0.966 0.933 0.912 0.902 0.891 0.881 0.881 0.891 174 166 153 140 129 114 102 88 76 64 48 –93 –72 –115 2 43 42 35 25 16 2 –9 0.002 0.003 0.003 0.003 0.008 0.017 0.035 0.062 0.095 0.143 0.191 0.234 0.715 1.226 1.773 2.069 2.801 2.754 2.973 2.985 2.079 4.327 0.022 0.027 0.028 0.032 0.087 0.207 0.444 0.851 1.380 2.120 2.855 –176 71 80 78 68 67 60 58 59 65 90 22 64 118 49 177 –148 –157 –161 –174 176 163 144 1.035 0.989 0.977 0.977 0.944 0.923 0.912 0.902 0.891 0.891 0.891 12 –5 –8 –18 –24 –35 –43 –56 –67 –79 –92 –103 0 –4 –7 –10 –11 –15 –15 –18 –21 –20 –34 22 12 21 126 85 80 79 73 72 64 55 48 43 43 86 102 56 167 –153 –160 –166 –178 173 160 142 12 21 –2 –8 –11 –22 –23 –34 –35 –43 –46 –51 –52 22 0 –4 –7 –10 –11 –15 –16 –19 –22 –22 –35 22 –115 –56 –122 13 48 46 41 31 21 7 –7 0.354 0.690 1.229 1.759 2.034 2.770 2.914 3.157 3.168 2.336 4.332 –178 80 80 82 71 69 64 62 61 67 90 3SK135A 900 MHz Gps AND NF TEST CIRCUIT VG2S (4 V) 1 000 pF 47 kΩ 1 000 pF ~ 10 pF ~ 10 pF INPUT 50 Ω ~ 10 pF ~ 10 pF OUTPUT 50 Ω L2 L1 47 kΩ RFC 1 000 pF 1 000 pF L1, L2 35 × 5 × 0.2 mm VG1S VDD (10 V) VDS = 10 V, VG2S = 4 V, ID = 10 mA 5 3SK135A No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2