DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK255 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES (Unit: mm) (VDS = 3.5 V) V V Gate1 to Source Voltage VG1S ±8*1 Gate2 to Source Voltage VG2S ±8*1 V Gate1 to Drain Voltage VG1D 18 V Gate2 to Drain Voltage VG2D 18 V Drain Current ID 25 mA Total Power Dissipation PD 130 mW Channel Temperature Tch 125 °C Storage Temperature Tstg –55 to +125 °C (1.3) 1.25 0.65 0.3 +0.1 –0.05 18 0 to 0.1 VDSX 1 Drain to Source Voltage 0.4 +0.1 –0.05 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) 0.60 4 Pins Super Mini Mold : 0.3 • Small Package 0.9±0.1 Embossed Type Taping 2.0±0.2 • Suitable for uses as RF amplifier in UHF TV tuner. • Automatically Mounting : 1.25±0.1 0.15 +0.1 –0.05 GPS = 18.0 dB TYP. (f = 900 MHz) 2 NF = 1.8 dB TYP. (f = 900 MHz) • High Power Gain : 0.3 +0.1 –0.05 • Low Noise Figure : 0.3 +0.1 –0.05 2.1±0.2 • Driving Battery 3 : 4 • Low VDD Use PACKAGE DIMENSIONS PIN CONNECTIONS *1: RL ≥ 10 kΩ *2: Free air 1. 2. 3. 4. Source Drain Gate2 Gate1 PRECAUTION Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage or fields. Document No. P10586EJ3V0DS00 (3rd edition) Date Published June 1996 P Printed in Japan © 1993 3SK255 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC SYMBOL MIN. Drain to Source Breakdown Voltage BVDSX 18 Drain Current IDSX 0.5 Gate1 to Source Cutoff Voltage VG1S(off) –1.0 Gate2 to Source Cutoff Voltage VG2S(off) 0 Gate1 Reverse Current MAX. UNIT V TEST CONDITIONS VG1S = VG2S = –2 V, ID = 10 µA 7.0 mA VDS = 3.5 V, VG2S = 3 V, VG1S = 0.75 V 0 +1.0 V VDS = 3.5 V, VG2S = 3 V, ID = 10 µA 0.5 1.0 V VDS = 3.5 V, VG1S = 3 V, ID = 10 µA IG1SS ±20 nA VDS = 0, VG2S = 0, VG1S = ±6 V Gate2 Reverse Current IG2SS ±20 nA VDS = 0, VG1S = 0, VG2S = ±6 V Forward Transfer Admittance |yfs| 14 19 24 mS VDS = 3.5 V, VG2S = 3 V, ID = 7 mA f = 1 kHz Input Capacitance Ciss 1.2 1.7 2.2 pF Output Capacitance Coss 0.5 1.0 1.5 pF Reverse Transfer Capacitance Crss 0.01 0.03 pF Power Gain Gps 18 21 dB VDS = 3.5 V, VG2S = 3 V, ID = 7 mA Noise Figure NF 1.8 3.0 dB f = 900 MHz IDSX Classification 2 TYP. Rank U1G Marking U1G IDSX (mA) 0.5 to 7.0 15 VDS = 3.5 V, VG2S = 3 V, ID = 7 mA f = 1 MHz 3SK255 TYPICAL CHARACTERISTICS (TA = 25 ˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ID – Drain Current – mA 200 130 mW 100 0 25 ID – Drain Current – mA VG1S = 1.2 V 20 1.0 V 15 0.8 V 10 0.6 V 5 0.4 V 25 50 75 100 10 DRAIN CURRENT vs. GATE1 TO SOURCE VOLTAGE FORWARD TRANSFER ADMITTANCE vs. GATE1 TO SOURCE VOLTAGE VDS = 3.5 V 3.0 V 2.5 V 2.0 V 15 10 1.5 V 5 1.0 V 0.5 1.0 1.5 2.0 2.5 40 VDS = 3.5 V f = 1 kHz 32 VG2S = 3.5 V 24 16 2.0 V 1.5 V 8 3.0 V 2.5 V 1.0 V 0 –0.5 0 0.5 1.0 1.5 VG1S – Gate1 to Source Voltage – V VG1S – Gate1 to Source Voltage – V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT INPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE 40 2.0 5.0 Ciss – Input Capacitance – pF VDS = 3.5 V f = 1 kHz 32 VG2S = 3.5 V 24 3.0 V 16 2.5 V 8 2.0 V 1.5 V 1.0 V 0 5 VDS – Drain to Source Voltage – V 20 0 0 125 TA – Ambient Temperature – °C VG2S = 3.5 V |yfs| – Forward Transfer Admittance – mS VG2S = 3.0 V 0.2 V |yfs| – Forward Transfer Admittance – mS PD – Total Power Dissipation – mW 25 10 ID – Drain Current – mA 20 4.0 ID = 7 mA (at VDS = 3.5 V, VG2S = 3.0 V) f = 1 MHz 3.0 2.0 1.0 0 –1.0 0 1.0 2.0 3.0 4.0 VG2S – Gate2 to Source Voltage – V 3 3SK255 POWER GAIN AND NOISE FIGURE vs. GATE2 TO SOURCE VOLTAGE OUTPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE 20 1.5 1.0 0.5 5 GPS – Power Gain – dB 2.0 10 ID = 7 mA (at VDS = 3.5 V, VG2S = 3.0 V) f = 1 MHz NF – Noise Figure – dB Coss – Output Capacitance – pF 2.5 ID = 7 mA (at VDS = 3.5 V, VG2S = 3.0 V) f = 900 MHz GPS 10 0 –10 NF –20 0 –1.0 0 1.0 2.0 3.0 4.0 0 –1.0 0 1.0 2.0 3.0 VG2S – Gate2 to Source Voltage – V VG2S – Gate2 to Source Voltage – V S-Parameter VDS = 3.5 V, VG2S = 3 V, ID = 7 mA Frequency 4 S11 (MHz) MAG 100 200 S21 S12 ANG MAG ANG MAG 1.017 –6.5 2.057 173.3 1.000 –13.4 2.034 163.6 300 0.999 –19.8 1.991 400 0.993 –26.6 1.996 500 0.984 –32.6 600 0.966 –39.1 700 0.948 800 0.934 S22 ANG MAG ANG 0.035 –88.2 0.985 –2.9 0.014 –121.6 0.987 –6.9 155.5 0.006 67.0 0.988 –10.4 146.8 0.006 71.3 0.983 –13.8 1.956 136.7 0.005 117.8 0.985 –17.1 1.930 130.4 0.002 –23.3 0.983 –20.8 –45.5 1.901 122.7 0.002 –162.4 0.979 –24.6 –51.4 1.897 114.5 0.003 37.8 0.986 –27.9 900 0.908 –57.5 1.897 105.6 0.011 –146.3 0.991 –32.1 1000 0.901 –83.8 1.984 96.6 0.010 –144.3 1.024 –36.4 4.0 3SK255 GPS AND NF TEST CIRCUIT AT f = 900 MHz VG2S 1 000 pF 47 kΩ 1 000 pF to 10 pF to 10 pF INPUT 50 Ω to 10 pF OUTPUT 50 Ω to 10 pF L2 L1 47 kΩ 1 000 pF RFC 1 000 pF L1, L2; 35 × 5 × 0.2 mm VG1S VDD 5 3SK255 [MEMO] 6 3SK255 [MEMO] 7 3SK255 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2