DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK176A RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • High Power Gain: • Low Noise Figure: GPS = 24 dB TYP. (f = 470 MHz) NF = 2.0 dB TYP. (f = 470 MHz) NF = 1.0 dB TYP. (f = 55 MHz) • Automatically Mounting: Embossed Type Taping • Suitable for use as RF amplifier and Mixer in CATV tuner. • Small Package: 4 Pins Mini Mold (Unit: mm) MAX. UNIT +0.1 0.4–0.05 (1.9) 4 +0.1 0.16–0.06 0 to 0.1 +0.1 1. 2. 3. 4. 5° Source Drain Gate2 Gate1 SYMBOL MIN. BVDSX 18 Drain Current IDSX 1.0 10 mA Gate1 to Source Cutoff Voltage VG1S(off) 0 +1.0 V Gate2 to Source Cutoff Voltage VG2S(off) 0 +1.0 V VDS = 6 V, VG1S = 3 V, ID = 10 µA Gate1 Reverse Current IG1SS ±20 nA VDS = 0, VG2S = 0, VG1S = ±10 V Drain to Source Breakdown Voltage TYP. 5° 0.4–0.05 1 5° ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC 5° 0.8 +0.1 0.6–0.05 V V V mA mW °C °C +0.2 18 ±8 (±10)* ±8 (±10)* 25 200 125 –55 to +125 1.1–0.1 VDSX VG1S VG2S ID PD Tch Tstg 3 2 +0.1 0.4–0.05 2.9±0.2 (1.8) 0.85 0.95 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature * RL ≥ 10 kΩ +0.2 2.8–0.1 +0.2 1.5–0.1 V ±20 VDS = 5 V, VG1S = 0.75 V, VG2S = 4 V VDS = 6 V, VG2S = 3 V, ID = 10 µA nA VDS = 0, VG1S = 0, VG2S = ±10 V mS VDS = 5 V, VG2S = 4 V, ID = 10 mA f = 1 kHz 3.2 pF 1.6 1.9 pF VDS = 6 V, VG2S = 3 V, ID = 10 mA f = 1 MHz 0.015 0.03 Gate2 Reverse Current IG2SS Forward Transfer Admittance | yfs | 22 25.5 Input Capacitance Ciss 2.2 2.7 Output Capacitance Coss 1.3 Reverse Transfer Capacitance Crss Power Gain GPS Noise Figure 1 NF1 2.0 3.5 dB Noise Figure 2 NF2 1.0 2.5 dB 21.0 TEST CONDITIONS VG1S = VG2S = –2 V, ID = 10 µA 24.0 pF dB VDS = 6 V, VG2S = 3 V, ID = 10 mA f = 470 MHz VDS = 6 V, VG2S = 3 V, ID = 10 mA f = 55 MHz IDSX Classification Class U87/UHG* U88/UHH* Marking U87 U88 IDSX (mA) 1.0 to 6.0 4.0 to 10.0 Document No. P10567EJ2V0DS00 (2nd edition) (Previous No. TD-2263) Date Published August 1995 P Printed in Japan * Old Specification/New Specification © 1995 1989 3SK176A TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 400 ID – Drain Current – mA PT – Total Power Dissipation – mW 10 300 200 100 VG1S = 0.8 V VG2S = 4 V 8 6 0.6 V 4 0.4 V 2 0.2 V 0 25 50 75 100 0 125 10 TA – Ambient Temperature – °C DRAIN CURRENT vs. GATE1 TO SOURCE VOLTAGE FORWARD TRANSFER ADMITTANCE vs. GATE1 TO SOURCE VOLTAGE |yfs| – Forward Transfer Admittance – mS 20 5V 4V 2V VG2S = 1 V 0 |yfs| – Forward Transfer Admittance – mS 3V 1.0 2.0 VG2S = 5 V 30 4V 3V 20 2V 10 1V 1.0 2.0 VG1S – Gate 1 to Source Voltage – V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT INPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE 5.0 VDS = 6 V f = 1 kHz 3V 20 VG2S = 2 V 10 ID – Drain Current – mA 2 VDS = 6 V f = 1 kHz VG1S – Gate 1 to Source Voltage – V 40 0 40 0 Ciss – Input Capacitance – pF ID – Drain Current – mA VDS = 6 V 10 20 VDS – Drain to Source Voltage – V 20 VDS = 6 V f = 1 MHz 4.0 ID = 10 mA at VG2S = 3 V 3.0 ID = 5 mA at VG2S = 3 V 2.0 1.0 0 –1.0 0 1.0 2.0 3.0 VG2S – Gate 2 to Source Voltage – V 4.0 3SK176A OUTPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE POWER GAIN AND NOISE FIGURE vs. GATE2 TO SOURCE VOLTAGE ID = 10 mA at VG2S = 3 V ID = 5 mA at VG2S = 3 V 1.0 GPS – Power Gain – dB 2.0 20 NF – Noise Figure – dB COSS – Output Capacitance – pF 10 VDS = 6 V f = 1 MHz 5 GPS 10 f = 470 MHz ID = 10 mA (at VDS = 6 V VG2S = 3 V) 0 –10 NF –20 0 –1.0 0 1.0 2.0 3.0 0 4.0 –2.0 VG2S – Gate 2 to Source Voltage – V 0 2.0 4.0 6.0 8.0 VG2S – Gate 2 to Source Voltage – V NF TEST CIRCUIT AT f = 55 MHz VG2S VDS RFC Ferrite Beads 1 500 pF 2.2 kΩ 1 500 pF 1 000 pF INPUT 3.3 kΩ 27 pF 47 kΩ 47 kΩ OUTPUT 27 pF 3.3 kΩ 50 Ω 50 Ω 1 000 pF VG1S 3 3SK176A GPS AND NF TEST CIRCUIT AT f = 470 MHz VG2S 1 000 pF 22 kΩ 1 000 pF Ferrite Beads 40 pF OUTPUT L2 INPUT 40 pF 50 Ω L1 50 Ω 1 000 pF 15 pF 1 000 pF 15 pF 22 kΩ 1 000 pF VG1S L3 1 000 pF VDS L1: φ1.2 mm U.E.W φ 5 mm 1T L2: φ1.2 mm U.E.W φ 5 mm 1T L3: REC 2.2 µ H 4 3SK176A [MEMO] 5 3SK176A No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2