DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SK2724 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS (in millimeter) This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. 10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 FEATURES 4 ±0.2 • Built-in G-S Protection Diode • Isolated TO-220 package 0.7 ±0.1 12.0 ±0.2 RDS(on)2 = 40 mΩ Max. (VGS = 4 V, ID = 18 A) • Low Ciss Ciss =1 200 pF Typ. 13.5 MIN. RDS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 18 A) 3 ±0.1 15.0 ±0.3 • Low On-Resistance 1.3 ±0.2 1.5 ±0.2 2.54 2.54 2.5 ±0.1 0.65 ±0.1 1. Gate 2. Drain 3. Source 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage MP-45F (ISOLATED TO-220) VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±35 A ID(pulse) ±140 A PT 2.0 W Drain Current (Pulse)* Total Power Dissipation (TA = 25 ˚C) Total Power Dissipation (TC = 25 ˚C) PT 30 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Drain Body Diode Gate Gate Protection Diode Source * PW ≤ 10 µs, duty cycle ≤ 1 % The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Document No. D10515EJ1V0DS00 (1st edition) Date Published April 1996 P Printed in Japan © 1996 2SK2724 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL Drain to Source On-State Resistance RDS(on)1 TYP. MAX. UNIT VGS = 10 V, ID = 18 A 20 27 mΩ RDS(on)2 VGS = 4 V, ID = 18 A 33 40 mΩ Gate to Source Cutoff Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.5 2.0 V Forward Transfer Admittance |yfs| VDS = 10 V, ID = 18 A 10 23 Drain Leakage Current IDSS VDS = 60 V, VGS = 0 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 ±10 µA Input Capacitance Ciss Output Capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time TEST CONDITION MIN. ID = 18 A, VGS(on) = 10 V, VDD = 30 V, RG = 10 Ω tf Total Gate Charge QG Gate to Source Charge QGS Gate to Drain Charge QGD Body Diode Forward Voltage ID = 35 A, VDD = 48 V, VGS = 10 V S 1 200 pF 570 pF 270 pF 35 ns 280 ns 160 ns 170 ns 50 nC 5.0 nC 22 nC VF(S-D) IF = 35 A, VGS = 0 1.0 V Reverse Recovery Time trr 70 ns Reverse Recovery Charge Qrr IF = 35 A, VGS = 0, di/dt = 100 A/µs 130 nC Test Circuit 1 Switching Time Test Circuit 2 Gate Charge D.U.T. RL RG RG = 10 Ω PG. VGS VGS 0 Wave Form VGS(on) 10 % 90 % VDD D.U.T. IG = 2 mA 90 % ID 90 % RL ID ID VGS 0 Wave Form 0 10 % 10 % td(on) tr td(off) tf t ton t = 1 µs Duty Cycle ≤ 1 % 2 toff PG. 50 Ω VDD 2SK2724 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 35 100 80 60 40 20 0 20 40 60 80 30 25 20 15 10 5 0 100 120 140 160 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 1 000 Pulsed d ite (V S = G im n (o S 10 V) ID(pulse) = 140 A PW ID(DC) = 35 A Tc = 25 ˚C 1 Single Pulse 0.1 1 = 10 0 PW )L RD 10 s = PW P 1 m Li owe PW = s m r = 10 ite D d( iss 200 m s PT ip m s = atio 30 n W ) 10 100 ID - Drain Current - A 100 µ ID - Drain Current - A 200 VGS = 20 V 100 VGS = 10 V VGS = 4 V 0 1 2 3 4 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 1 000 Pulsed Tch = –25 ˚C 25 ˚C 125 ˚C 100 10 1 VDS = 10 V 0 5 10 15 VGS - Gate to Source Voltage - V 3 2SK2724 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1 000 Rth(ch-a) = 62.5 ˚C/W 100 10 1 Rth(ch-c) = 4.2 ˚C/W 0.1 0.01 Single Pulse 0.001 100 µ 10 µ 1m 10 m 100 m 1 10 100 1 000 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS = 10 V Pulsed Tch = –25 ˚C 25 ˚C 75 ˚C 125 ˚C 10 1 1 100 10 1 000 RDS(on) - Drain to Source On-State Resistance - mΩ ID - Drain Current - A 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 60 80 Pulsed 60 40 VGS = 4 V 20 0 VGS = 10 V 1 10 ID - Drain Current - A 100 ID = 18 A 40 20 0 20 10 30 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cutoff Voltage - V |yfs| - Forward Transfer Admittance - S 1 000 RDS(on) - Drain to Source On-State Resistance - mΩ PW - Pulse Width - s VDS = 10 V ID = 1 mA 2.0 1.5 1.0 0.5 0 –50 0 50 100 150 Tch - Channel Temperature - ˚C SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed 80 ISD - Diode Forward Current - A 60 VGS = 4 V 40 20 VGS = 10 V 100 10 1 VGS = 0 0.1 ID = 18 A 0 –50 0 50 100 0 150 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS 1 000 VGS = 0 f = 1 MHz Ciss 1 000 Coss Crss 100 10 0.1 1 10 100 td(off) 100 tf tr td(on) 10 1.0 0.1 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 10 1.0 10 IF - Diode Current - A 100 16 80 VDS - Drain to Source Voltage - V trr - Reverse Recovery time - ns DYNAMIC INPUT/OUTPUT CHARACTERISTICS di/dt = 50 A/µ s VGS = 0 100 1.0 0.1 VDD =30 V VGS(on) =10 V RG =10 Ω 10 100 1.0 VDS - Drain to Source Voltage - V 1000 1.5 1.0 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C 10 000 0.5 ID = 35 A 14 12 60 VGS 40 VDD = 12 V 30 V 48 V 10 8 VDS 6 20 4 2 0 20 40 60 Qg - Gate Charge - nC VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - mΩ 2SK2724 0 80 5 2SK2724 REFERENCE Document Name 6 Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. C10535E Semiconductor device package manual. C10943X Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. X10679E Power MOS FET features and application switching power supply. TEA-1034 Application circuits using Power MOS FET. TEA-1035 Safe operating area of Power MOS FET. TEA-1037 2SK2724 [MEMO] 7 2SK2724 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2