DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE425S01 is a Hetero Junction FET that utilizes the (Unit: mm) hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS 2.0 ±0.2 and another commercial systems. 2. FEATURES 0 1 ±0 .2 • Super Low Noise Figure & High Associated Gain NF = 0.60 dB TYP., Ga = 12.0 dB TYP. at f = 12 GHz ORDERING INFORMATION PART NUMBER SUPPLYING FORM MARKING NE425S01-T1 Tape & reel 1000 pcs./reel G NE425S01-T1B Tape & reel 4000 pcs./reel G 0.65 TYP. VDS 4.0 V 1.9 ±0.2 Gate to Source Voltage VGS –3.0 V 1.6 ID IDSS mA IG 100 µA Total Power Dissipation Ptot 165 mW Channel Temperature Tch 125 ˚C Storage Temperature Tstg –65 to +125 Source Drain Source Gate 1.5 MAX Drain to Source Voltage Gate Current 1. 2. 3. 4. 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain Current 4 2.0 ±0.2 2 0.5 TYP. • Gate Length : Lg ≤ 0.20 µm • Gate Width : Wg = 200 µm 0.125 ±0.05 0.4MAX 4.0 ±0.2 ˚C RECOMMENDED OPERATING CONDITION (TA = 25 ˚C) CHARACTERISTIC SYMBOL Drain to Source Voltage MIN. TYP. MAX. Unit VDS 2 3 V Drain Current ID 10 20 mA Input Power Pin 0 dBm Document No. P11161EJ3V0DS00 (3rd edition) Date Published October 1996 N Printed in Japan © 1996 NE425S01 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT 0.5 10 µA VGS = –3 V VDS = 2 V, VGS = 0 V Gate to Source Leak Current IGSO Saturated Drain Current IDSS 20 60 90 mA VGS(off) –0.2 –0.7 –2.0 V Transconductance gm 45 60 Noise Figure NF Associated Gain Ga Gate to Source Cutoff Voltage 0.60 10.5 0.80 12.0 TEST CONDITIONS VDS = 2 V, ID = 100 µA mS VDS = 2V, ID = 10 mA dB VDS = 2 V, ID = 10 mA, f = 12 GHz dB TYPICAL CHARACTERISTICS (TA = 25 ˚C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 250 100 200 80 ID - Drain Current - mA Ptot - Total Power Dissipation - mW TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 150 100 50 VGS = 0 V 60 –0.2 V 40 –0.4 V 20 –0.6 V –0.8 V 0 50 100 150 200 250 0 1.5 3.0 TA - Ambient Temperature - ˚C VDS - Drain to Source Voltage - V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY ID - Drain Current - mA VDS = 2 V 60 40 20 0 –2.0 –1.0 VGS - Gate to Source Voltage - V 0 MSG. - Maximum Stable Gain - dB MAG. - Maximum Availabel Gain - dB |S21S|2 - Forward Insertion Gain - dB 24 VDS = 2 V ID = 10 mA 20 MSG. MAG. 16 |S21S| 12 2 8 4 1 2 4 6 8 10 f - Frequency - GHz 2 14 20 30 NE425S01 Gain Calculations 1 + | ∆ |2 – | S11 |2 – | S22 |2 2 | S12 | | S21 | MSG. = | S21 | | S12 | K = MAG. = | S21 | (K ± K 2 – 1) | S12 | ∆ = S11 • S22 – S21 • S12 NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT 24 VDS = 2 V f = 12 GHz VDS = 2 V ID = 10 mA 14 13 16 1.0 12 0.5 8 NF - Noise Figure - dB Ga Ga - Associated Gain - dB NF - Noise Figure - dB 20 12 2.0 11 1.5 10 1.0 0.5 NF NF 0 0 1 2 4 6 8 10 14 4 20 30 10 20 30 ID - Drain Current - mA f - Frequency - GHz 3 Ga - Associated Gain - dB Ga NE425S01 S-PARAMETERS VDS = 2 V, ID = 10 mA START 2 GHz, STOP 18 GHz, STEP 500 MHz Marker 1: 4 GHz 2: 8 GHz 3: 12 GHz 4: 16 GHz 5: 18 GHz S11 S12 1.0 +90˚ 0.5 2.0 5 +135˚ +45˚ 4 ∞ 0 1 ±180˚ 2 0 3 3 5 4 1 2 –0.5 –135˚ –2.0 –1.0 –45˚ –90˚ Rmax. = 1 S21 S22 +90˚ 1.0 Rmax. = 0.2 0.5 +135˚ 1 2.0 +45˚ 2 5 3 4 ±180˚ 0 ∞ 0 3 5 4 –135˚ 2 –45˚ –2.0 –0.5 –90˚ 4 1 Rmax. = 5 –1.0 Rmax. = 1 NE425S01 S-PARAMETERS MAG. AND ANG. VDS = 2 V, ID = 10 mA FREQUENCY MHz S11 MAG. S21 ANG. MAG. (deg.) S12 ANG. MAG. (deg.) S22 ANG. MAG. (deg.) ANG. (deg.) 2000 .999 –26.7 4.914 151.5 .029 74.5 .444 –18.9 2500 .994 –29.0 4.748 147.2 .036 73.3 .507 –26.8 3000 .952 –38.8 4.770 137.3 .044 65.3 .472 –32.7 3500 .939 –44.6 4.654 131.3 .050 62.7 .485 –37.1 4000 .926 –51.1 4.547 125.0 .055 59.3 .490 –40.9 4500 .866 –56.7 4.413 117.6 .059 53.7 .477 –45.3 5000 .821 –60.6 4.285 111.6 .064 50.8 .474 –48.5 5500 .783 –63.7 4.192 105.7 .069 48.4 .465 –51.7 6000 .788 –70.5 4.207 99.8 .075 45.1 .439 –55.4 6500 .755 –76.1 4.219 93.7 .079 41.7 .421 –58.9 7000 .721 –82.9 4.231 87.2 .085 38.6 .401 –63.4 7500 .679 –91.9 4.234 80.0 .092 33.4 .361 –69.3 8000 .634 –101.6 4.207 72.6 .095 28.8 .322 –75.7 8500 .595 –111.7 4.136 65.3 .098 24.2 .288 –83.0 9000 .563 –122.5 4.059 58.1 .104 20.5 .256 –92.1 9500 .537 –132.5 3.958 51.1 .105 16.0 .229 –101.2 10000 .505 –142.0 3.834 44.3 .108 11.7 .208 –108.5 10500 .478 –151.0 3.735 38.3 .109 8.6 .187 –114.8 11000 .451 –159.2 3.647 32.5 .110 5.3 .164 –120.0 11500 .421 –168.7 3.609 26.6 .112 1.9 .147 –124.7 12000 .415 179.9 3.589 20.6 .115 .3 .124 –133.2 12500 .424 167.1 3.556 13.4 .116 –3.3 .108 –151.1 13000 .448 152.5 3.473 5.5 .122 –7.9 .103 175.2 13500 .477 138.9 3.331 –1.8 .121 –13.1 .126 143.2 14000 .508 128.1 3.161 –8.5 .118 –15.9 .157 120.6 14500 .530 120.0 3.006 –14.2 .115 –18.0 .184 110.2 15000 .554 113.2 2.913 –19.4 .118 –18.9 .214 106.0 15500 .579 109.4 2.822 –24.6 .118 –19.9 .235 102.0 16000 .595 104.0 2.753 –30.6 .120 –22.0 .264 100.0 16500 .625 97.3 2.685 –37.0 .121 –25.5 .297 94.1 17000 .652 89.6 2.601 –43.8 .123 –30.4 .317 88.4 17500 .688 82.2 2.505 –50.8 .124 –34.2 .345 82.5 18000 .709 75.3 2.372 –57.2 .122 –37.3 .383 76.2 5 NE425S01 AMP. PARAMETERS VDS = 2 V, ID = 10 mA FREQUENCY GUmax GAmax |S21|2 |S12|2 MHz dB dB dB dB 2000 6 K Delay Mason’s U ns dB G1 G2 dB dB 1.29 13.83 –30.68 .02 .024 2500 34.12 13.53 –28.81 .05 .024 19.30 .95 3000 24.91 13.57 –27.20 .25 .055 10.25 1.09 3500 23.80 13.36 –26.07 .27 .033 9.28 1.16 4000 22.80 13.15 –25.22 .29 .035 8.45 1.19 4500 20.04 12.89 –24.56 .48 .041 30.046 6.02 1.12 5000 18.61 12.64 –23.90 .59 .033 25.177 4.86 1.11 5500 17.63 12.45 –23.24 .67 .032 23.488 4.12 1.06 6000 17.62 12.48 –22.45 .64 .033 26.711 4.21 .93 6500 17.02 12.50 –22.08 .70 .034 25.122 3.67 .85 7000 16.47 12.53 –21.45 .73 .036 25.323 3.18 .76 7500 15.82 12.53 –20.71 .78 .040 23.957 2.68 .61 8000 15.19 12.48 –20.45 .84 .041 22.607 2.23 .48 8500 14.60 12.33 –20.15 .89 .040 21.735 1.90 .38 9000 14.12 12.17 –19.69 .91 .040 21.968 1.66 .29 9500 13.66 11.95 –19.57 .96 .039 21.196 1.48 .23 10000 13.15 15.21 11.67 –19.29 1.00 .038 20.248 1.28 .19 10500 12.73 13.86 11.45 –19.29 1.06 .033 19.297 1.13 .15 11000 12.34 13.15 11.24 –19.19 1.11 .032 18.449 .99 .12 11500 12.09 12.73 11.15 –19.05 1.15 .033 17.976 .85 .09 12000 11.99 12.61 11.10 –18.81 1.15 .033 18.424 .82 .07 12500 11.93 12.56 11.02 –18.74 1.15 .040 18.844 .86 .05 13000 11.83 12.56 10.81 –18.31 1.11 .044 19.943 .97 .05 13500 11.64 12.31 10.45 –18.38 1.12 .040 19.641 1.12 .07 14000 11.40 11.91 10.00 –18.54 1.15 .037 18.906 1.30 .11 14500 11.14 11.54 9.56 –18.76 1.19 .031 18.016 1.43 .15 15000 11.08 11.50 9.29 –18.59 1.16 .029 18.476 1.59 .20 15500 11.03 11.49 9.01 –18.57 1.14 .029 18.729 1.77 .25 16000 11.00 11.57 8.79 –18.42 1.11 .033 19.308 1.90 .31 16500 11.13 11.87 8.58 –18.33 1.07 .036 20.642 2.15 .40 17000 11.16 12.17 8.30 –18.19 1.03 .037 22.203 2.40 .46 17500 11.31 7.97 –18.10 .98 .039 25.645 2.78 .55 18000 11.22 7.50 –18.28 .99 .035 22.558 3.03 .69 NE425S01 NOISE PARAMETER VDS = 2 V, ID = 10 mA Γopt. Freq. (GHz) NFmin. (dB) Ga (dB) 2.0 0.31 19.7 0.93 14 0.38 4.0 0.34 17.7 0.80 29 0.33 6.0 0.40 16.0 0.65 48 0.25 8.0 0.45 14.4 0.49 72 0.18 10.0 0.52 13.1 0.36 102 0.11 12.0 0.60 12.0 0.27 139 0.08 14.0 0.72 11.3 0.24 –176 0.07 16.0 0.86 11.0 0.30 –122 0.10 18.0 1.00 10.8 0.47 –58 0.22 MAG. ANG. (deg.) Rn/50 7 NE425S01 TYPICAL MOUNT PAD LAYOUT 2.4 mm TYP. 2.4 mm TYP. 8 NE425S01 RECOMMENDED SOLDERING CONDITIONS The following conditions (see table below) must be met when soldering this product. Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different conditions. <TYPES OF SURFACE MOUNT DEVICE> For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL” (C10535E). Soldering process Soldering conditions Infrared ray reflow Peak package’s surface temperature: 230 ˚C or below, Reflow time: 30 seconds or below (210 ˚C or higher), Number of reflow process: 1, Exposure limitNote: None Partial heating method Terminal temperature: 230 ˚C or below, Flow time: 10 seconds or below, Exposure limitNote: None Symbol IR30-00 Note Exposure limit before soldering after dry-pack package is opened. Storage conditions: 25 ˚C and relative humidity at 65 % or less. Caution Do not apply more than a single process at once, except for “Partial heating method”. PRECAUTION Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with shottky barrier gate. 9 NE425S01 [MEMO] 10 NE425S01 [MEMO] 11 NE425S01 Caution The Grate Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 2