DATA SHEET SHEET DATA MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS (Unit: mm) FEATURES • Suitable for use as RF amplifier in VHF TV tuner. +0.2 Gate1 to Source Voltage VG1S VG2S 8 8 V Gate2 to Source Voltage Drain Current ID 25 mA Total Power Dissipation PT 200 mW Channel Temperature Tch 125 Storage Temperature Tstg 55 to +125 C C 5° MIN. Drain to Source Breakdown Voltage BVDSX 20 IDSS 7 Drain Current +0.1 0 to 0.1 5° PIN CONNECTIONS 1. Source 2. Drain 3. Gate 2 4. Gate 1 ELECTRICAL CHARACTERISTICS (TA = 25 C) SYMBOL 5° 0.8 1.1 +0.2 −3.1 +0.1 0.6 −0.05 V 5° CHARACTERISTIC 3 (1.9) V +0.1 20 0.4 −0.05 VDSX 1 Drain to Source Voltage 0.16 −0.06 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 4 2.9±0.2 (1.8) 0.85 0.95 2 • Low NF : 1.3 dB TYP. 1.5 +0.2 −0.1 +0.1 +0.1 • High Gps : 23 dB TYP. 0.4 −0.05 2.8 −0.3 0.4 −0.05 • Low Crss : 0.05 pF TYP. TYP. 10 MAX. UNIT TEST CONDITIONS V VG1S = VG2S = 2 V, ID = 10 A 25 mA VDS = 6 V, VG2S = 3 V, VG1S = 0 Gate1 to Source Cutoff Voltage VG1S(OFF) 2.0 V VDS = 8 V, VG2S = 0, ID = 5 A Gate2 to Source Cutoff Voltage VG2S(OFF) 1.5 V VDS = 8 V VG1S = 0, ID = 5 A Gate1 Reverse Current IG1SS 20 nA VDS = 0, VG1S = 8 V, VG2S = 0 Gate2 Reverse Current IG2SS 20 nA VDS = 0, VG2S = 8 V, VG1S = 0 Forward Transfer Admittance yfs mS VDS = 6 V, VG2S = 3 V, ID = 10 mA 22 28 f = 1 kHz Input Capacitance Ciss 4.0 5.0 6.5 pF VDS = 6 V, VG2S = 3 V, ID = 10 mA Output Capacitance Coss 2.2 2.9 3.7 pF f = 1 MHz Reverse Transfer Capacitance Crss 0.05 0.08 pF Power Gain Cps Noise Figure NF IDSS classification 21 24 1.2 2.5 dB VDS = 10 V, VG2S = 5 V, ID = 10 mA dB f = 200 MHz V11 7-13 mA V12 11-19 mA V13 17-25 mA Document No. P12449EJ2V0DS00 (2nd edition) (Previous No. TC-1508) Date Published March 1997 N Printed in Japan © 1983 3SK131 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VG2 = 3.0 V 400 ID-Drain Current-mA PT-Total Power Dissipation-mW 20 300 200 VG1S = 0 V −0.1 10 −0.2 −0.3 −0.4 100 −0.5 −0.6 0 25 50 75 100 Ta-Ambient Temperature-°C 125 0 10 VDS-Drain to Source Voltage-V DRAIN CURRENT vs. GATE1 TO SOURCE VOLTAGE 20 FORWARD TRANSFER ADMITTANCE vs. GATE1 TO SOURCE VOLTAGE 2V |yfs|-Forward Transfer Admitance-ms ID-Drain Current-mA 4 3 VV 5V 20 1V 10 VG2S = 0 −1.0 0 VG1S-Gate 1 to Source Voltage-V VDS = 6 V 4V 30 3V 20 1V 0 +1.0 0V −1.0 0 VG1S-Gate 1 to Source Voltage-V 1.0 INPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE VDS = 6.0 V f = 1 MHz Ciss-Input Capacitance-pF 30 |yfs|-Forward Transfer Admitance-ms 2V 10 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 25 20 15 8.0 6.0 VG1S = 0.05 V 4.0 2.0 10 5 0 2 VG2S = 5 V 40 0 −1.0 VDS = 6 V VG2 = 3 V f = 1.0 kHz 10 ID-Drain Current-mA 20 0 1.0 2.0 3.0 VG2S-Gate 2 to Source Voltage-V 4.0 3SK131 OUTPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE INPUT ADMITTANCE (yis) vs. FREQUENCY 10 5.0 VG1S = 0 V 3.0 −0.5 V 2.0 1.0 0 −1.0 −5 bfs-Forward Trancfer Susceptance-mS bis-Input Susceptance-mS 4.0 0 1.0 2.0 3.0 VG2S-Gate 2 to Source Voltage-V 4.0 FORWARD TRANSFER ADMITTANCE (yfs) vs. FREQUENCY gfs-Forward Transfer Conductance-mS 100 MHz 10 20 30 VDS = 6 V VG2S = 3 V ID = 10 mA −10 200 MHz 300 MHz 1 gis-Input Conductance-mS 2 REVERSE TRANSFER ADMITTANCE (yrs) vs. FREQUENCY grs-Reverse Transfer Conductance-mS 0.1 0.2 VDS = 6 V VG2S = 3 V ID = 10 mA 300 MHz −0.1 200 MHz OUTPUT ADMITTANCVE (yos) vs. FREQUENCY 300 MHz 100 MHz POWER GAIN vs. DRAIN CURRENT 25 VDS = 6 V VG2S = 3 V ID = 10 mA 20 200 MHz 3 2 100 MHz 15 f = 200 MHz VDS = 10 V VG2S = 5 V VDS = 5 V VG2S = 3 V 10 5 1 0 100 MHz 0 Gps-Power Gain-dB bos-Output Susceptance-mS 4 300 MHz 200 MHz 5 −0.2 −15 5 VDS2 = 6 V VG2S = 3 V ID = 10 mA 0 brs-Reverse Transfer Susceptance-mS Coss-Output Capacitance-pF VDS = 6.0 V f = 1.0 MHz 0.5 gos-Output Conductance-mS 1.0 0 2 4 6 ID-Drain Current=mA 8 10 3 3SK131 NOISE FIGURE, POWER GAIN vs. GATE2 TO SOURCE VOLTAGE NOISE FIGURE vs. DRAIN CURRENT f = 200 MHz VDS = 10 V VG2S = 5 V VDS = 5 V VG2S = 3 V f = 200 MHz VDS = 10 V VDS = 5 V Gps 3.0 2.0 20 3 10 2 0 NF 1.0 1 −10 0 2 4 6 ID-Drain Current=mA 8 −1 10 0 0 1 2 3 4 5 6 VG2S-Gate 2 to Source Voltage-V 7 8 TEST CIRCUIT VG2S 1000 pF 22 kΩ TEST CONDITION VDS = 10 V, VG2S = 5 V, ID = 10 mA f = 200 MHz L1: φ 0.6 mm U.E.W. 7 mm 3T 7 pF OUTPUT L2: φ 0.6 mm U.E.W. 7 mm 3T L3: RFC 2.2 µ H 1000 pF INPUT 7 pF L2 1000 pF L1 50 Ω 50 Ω 1000 pF 15 pF 1000 pF 200 Ω 15 pF L3 22 kΩ 1000 pF VG1S 4 1000 pF VDS NF-Noise Figure-dB 4 Gps-Power Gain-dB NF-Noise Figure-dB 4.0 30 3SK131 [MEMO] 5 3SK131 [MEMO] 6 3SK131 [MEMO] 7 3SK131 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5