DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz • Gate Length : Lg = 0.25 µm • Gate Width : Wg = 200 µm ORDERING INFORMATION PART NUMBER QUALITY GRADE APPLICATIONS NE32400 Standard (Grade D) Commercial NE24200 Grade C and B (B is special order) Industrial, space ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDS 4.0 Gate to Source Voltage VGS –3.0 V ID IDSS mA Drain Current V Total Power Dissipation Ptot* 200 mW Channel Temperature Tch 175 ˚C Storage Temperature Tstg –65 to +175 ˚C * Chip mounted on a Alumina heatsink (size: 3 × 3 × 0.6t) ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Gate to Source Leak Current IGSO – 0.5 10 µA VGS = –3 V Saturated Drain Current IDSS 15 40 70 mA VDS = 2 V, VGS = 0 V VGS(off) –0.2 –0.8 –2.0 V VDS = 2 V, ID = 100 µA gm 45 60 – mS VDS = 2 V, ID = 10 mA Thermal Resistance Rth* – – 260 ˚C/W Noise Figure NF – 0.6 0.7 dB Associated Gain Ga 10.0 11.0 – dB Gate to Source Cutoff Voltage Transconductance TEST CONDITIONS channel to case VDS = 2 V, ID = 10 mA, f = 12 GHz RF performance is determined by packaging and testing 10 chips per wafer. Wafer rejection criteria for standard devices is 2 rejects per 10 samples. Document No. P11345EJ2V0DS00 (2nd edition) (Previous No. TD-2358) Date Published May 1996 P Printed in Japan © 1996 NE32400, NE24200 CHIP DIMENSIONS (Unit: µm) 400 112 Drain Gate Source 60 Gate 45 41 96 Source 150 350 Drain 53 61 56 113 47 40 Thickness = 140 µm : BONDING AREA TYPICAL CHARACTERISTICS (TA = 25 ˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 250 VGS = 0 V 200 ID – Drain Current – mA Ptot – Total Power Dissipation – mW 50 150 100 50 0 –0.2 V 30 –0.4 V 20 –0.6 V 10 50 100 150 200 TA – Ambient Temperature – ˚C 2 40 250 0 1 2 3 4 VDS – Drain to Source Voltage – V 5 NE32400, NE24200 MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 50 24 VDS = 2.0 V ID = 10 mA MSG. – Maximum Stable Gain – dB |S21s|2 – Foward Insertion Gain – dB VDS = 2 V ID – Drain Current – mA 40 30 20 10 0 –2.0 –1.0 20 MSG. 16 |S21s|2 12 8 4 0 1 2 VGS – Gate to Source Voltage – V 4 6 8 10 30 40 20 f – Frequency – GHz Gain Calculations 1 + | ∆ |2 − | S11 |2 − | S 22 |2 2 | S12 || S 21 | MSG. = | S 21 | | S12 | K= MAG. = | S 21 | (K ± K 2 − 1) | S12 | ∆ = S11 ⋅ S 22 − S 21 ⋅ S12 NOISE FIGURE ASSOCIATED vs. FREQUENCY 24 3 VDS = 2 V ID = 10 mA VDS = 2 V f = 12 GHz 20 3 15 2 12 1 2 Ga 10 1 NF 5 8 NF 0 NF – Noise Figure – dB Ga 15 Ga – Associated Gain – dB NF – Noise Figure – dB 4 1 2 0 4 6 8 10 14 20 30 4 Ga – Associated Gain – dB 5 NOISE FIGURE, ASSOCIATED GAIN vs. RATIO OF DRAIN CURRENT TO ZERO-GATE VOLTAGE CURRENT 1 2 4 6 8 20 40 60 0 100 IDS/IDSS – Ratio of Drain Current to Zero-Gate Voltage Current – % f – Frenquency – GHz 3 0.37 0.13 0.36 0.04 0 0.4 1 0.0 9 0.40 0.10 –90 0.38 0.39 0.12 0.11 –100 –80 0.8 1.6 0.7 1.4 1.2 1.0 0.9 –11 –70 4 0.3 6 0.1 3 0.3 7 0 0.35 0.15 –1 2 –6 32 0.1 1.8 0.2 0 0.4 0.0 2 8 0 00 .43 0. 07 2.0 0. 0. 31 19 NE G 0.4 30 –1 0.6 5 E IV AT ( ) 0 1. S22 50 20 10 5.0 4.0 3.0 2.0 1.8 1.6 1.4 1.2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 ( 0 1. 0 4.0 5.0 0.2 0.4 1 GHz 8 0. 1 GHz 0.2 8 0.2 2 0 0. 0.6 .20 –4 S11 18 0 –5 26 GHz 0. E NC TA AC – JX –– E – R – ZO 1. 0.27 0.23 0.6 ) 0.3 0.8 0.2 9 0 0 0.2 0.3 1 0 –3 0 0 0 0.2 0.0 0 .4 5 5 POS 14 ITIV 0 ER EA CT A ––+JX NCE ZO–– CO M PO N 0 –10 0.8 0.1 3. RESTSTANCE COMPONENT 0.26 0.24 0 6 15 0 0. 4 0 0.6 –20 1. 7 0.4 REF 3 TO 6 0.0GTHS ANGLE OF 0.4 N LE –160 4 E 0 0. WAV 5 0.4 5 50 –1 .0 0 4 4 0. 06 40 ENT ON MP 0. –1 CO 0. 8 0.6 WAVELE NGTH S 0.02 TOWARD 0.0 GENE 0.48 3 RA FCIENT 0.4 0.0TOR IN DE 7 4 GRE 0.4 ES 0.4 0 0.2 0. 0. 0. 06 44 2.0 5 0.6 1.8 50 0.25 0.25 0.1 1.6 0.2 1.0 0.9 0.8 1.4 0.7 0.1 0.3 7 3 0. 0.2 600 10 20 0.1 0.4 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 O (ZR ( 0.1 6 0.3 4 1 0.2 9 0.2 30 26 GHz 3. T EN 70 0 0.2 0 4 1 0.15 0.35 0.3 0.2 4 0. 20 40 0.3 07 43 0. 0 13 2 4.0 0. 0.4 1 90 0.14 0.36 80 6.0 0 0.4 0.13 0.37 10 .08 0.12 0.38 20 0 0.11 0.39 100 50 .09 0.10 0.40 110 19 0. 31 0. 0 0.01 0.49 0.48 0 0.49 01 0. 2 D A O .0 L 0 WARD LECTION COEF NE32400, NE24200 S-PARAMETERS VDS = 2 V, ID = 10 mA START 1 GHz, STOP 26 GHz, STEP 1 GHz 0. 0. 18 32 50 NE32400, NE24200 S-PARAMETERS MAG. AND ANG. VDS = 2 V, ID = 10 mA FREQUENCY S11 MAG. (MHz) S21 ANG. MAG. (deg.) S12 ANG. S22 MAG. ANG. (deg.) MAG. (deg.) K MSG/MAG ANG. (deg.) (dB) 1000 0.996 –12 4.680 171 0.015 83 0.616 –10 0.05 24.9 2000 0.994 –23 4.603 161 0.032 76 0.613 –16 0.07 21.6 3000 0.979 –34 4.486 152 0.046 70 0.601 –23 0.08 19.9 4000 0.963 –44 4.314 143 0.059 65 0.592 –30 0.10 18.6 5000 0.929 –54 4.118 135 0.071 59 0.580 –36 0.18 17.7 6000 0.904 –62 3.872 127 0.076 55 0.578 –40 0.28 17.1 7000 0.882 –70 3.759 120 0.092 51 0.574 –46 0.30 16.1 8000 0.851 –81 3.632 111 0.097 45 0.557 –52 0.35 15.7 9000 0.836 –89 3.423 104 0.098 40 0.543 –55 0.40 15.5 10000 0.809 –97 3.290 97 0.102 40 0.529 –59 0.42 15.1 11000 0.792 –105 3.179 91 0.107 37 0.523 –62 0.44 14.7 12000 0.774 –112 3.059 84 0.112 35 0.511 –67 0.45 14.4 13000 0.762 –119 2.940 78 0.118 31 0.489 –72 0.46 14.0 14000 0.745 –124 2.807 73 0.121 28 0.479 –77 0.49 13.6 15000 0.729 –128 2.698 68 0.124 26 0.468 –81 0.51 13.4 16000 0.717 –133 2.616 63 0.129 24 0.464 –85 0.54 13.1 17000 0.697 –137 2.526 58 0.134 21 0.462 –90 0.58 12.8 18000 0.685 –141 2.421 54 0.137 19 0.460 –94 0.63 12.5 19000 0.665 –146 2.315 49 0.135 19 0.460 –96 0.68 12.3 20000 0.647 –150 2.220 45 0.136 18 0.460 –98 0.70 12.1 21000 0.625 –156 2.159 40 0.138 18 0.459 –100 0.71 11.9 22000 0.612 –160 2.046 34 0.138 17 0.457 –102 0.72 11.7 23000 0.596 –166 1.892 30 0.139 17 0.455 –103 0.73 11.5 24000 0.592 –170 1.866 27 0.140 16 0.455 –105 0.74 11.3 25000 0.587 –174 1.780 25 0.141 21 0.454 –107 0.74 11.2 26000 0.584 –178 1.751 21 0.141 22 0.453 –108 0.75 11.0 5 NE32400, NE24200 CHIP HANDLING DIE ATTACHMENT Die attach operation can be accomplished with Au-Sn (within a 300 ˚C – 10 s) performs in a forming gas environment. Epoxy die attach is not recommend. BONDING Bonding wires should be minimum length, semi hard gold wire (3-8 % elongation) 20 microns in diameter. Bonding should be performed with a wedge tip that has a taper of approximately 15 %. Bonding time should be kept to minimum. As a general rule, the bonding operation should be kept within a 280 ˚C, 2 minutes for all bonding wires. If longer periods are required, the temperature should be lowered. PRECAUTIONS The user must operate in a clean, dry environment. The chip channel is glassivated for mechanical protection only and does not preclude the necessity of a clean environment. The bonding equipment should be periodically checked for sources of surge voltage and should be properly grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static discharge. Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with shottky barrier gate. CAUTION The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the Japanese law concerned and so on, especially in case of removal. 6 NE32400, NE24200 [MEMO] 7 NE32400, NE24200 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2