DATA DATA SHEET SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS NE76118 is a n-channel GaAs MES FET housed in MOLD package. in millimeters FEATURES 2.1±0.2 1.25±0.1 • Low noise figure PACKING STYLE NE76118-T1 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin 3 (Source), Pin 4 (Drain) face to perforation side of the tape. NE76118-T2 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin 1 (Source), Pin 2 (Gate) face to perforation side of the tape. (1.3) 0.3+0.1 –0.05 0.3+0.1 –0.05 2 3 0.15+0.1 –0.05 QUANTITY 0 to 0.1 PART NUMBER 0.9±0.1 ORDERING INFORMATION 4 • Tape & reel packaging only available 1 2.0±0.2 • 4 pins super mini mold V52 Ga = 13.5 dB TYP. at f = 2 GHz • Gate width : Wg = 400 Pm (1.25) 0.60 0.65 +0.1 0.3+0.1 –0.05 0.3 0.4–0.05 NF = 0.8 dB TYP. at f = 2 GHz • High associated gain PIN CONNECTIONS 1. Source 2. Gate 3. Source 4. Drain * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: NE76118) ABSOLUTE MAXIMUM RATINGS (TA = 25 qC) Drain to Source Voltage VDS 5.0 V Gate to Source Voltage VGSO –5.0 V Gate to Drain Voltage VGDO –6.0 V ID IDSS mA Drain Current Total Power Dissipation Ptot 130 mW Channel Temperature Tch 150 qC Storage Temperature Tstg –65 to +150 qC Document No. P11129EJ2V0DS00 (2nd edition) Date Published January 1997 N Printed in Japan © 1996 NE76118 RECOMMENDED OPERATING CONDITION (TA = 25 qC) CHARACTERISTIC TYP. MAX. Unit VDS 3 4 V Drain Current ID 10 20 mA Input Power Pin 0 dBm Drain to Source Voltage SYMBOL MIN. ELECTRICAL CHARACTERISTICS (TA = 25 qC) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT Gate to Source Leak Current IGSO ð ð 10 PA VGS = ð5 V Saturated Drain Current IDSS 30 ð 100 mA VDS = 3 V, VGS = 0 V VGS(off) ð0.5 ð ð3.0 V VDS = 3 V, ID = 100 PA Transconductance gm 20 45 ð mS VDS = 3 V, ID = 10 mA Noise Figure NF 0.8 dB f = 2 GHz Associated Gain Ga 13.5 dB Noise Figure NF 0.9 Associated Gain Ga Gate to Source Cut off Voltage IDSS rank is specified as follows. K : 30 to 100 mA M : 50 to 100 mA 2 9.5 10.5 1.4 dB dB TEST CONDITIONS f = 4 GHz VDS = 3 V ID = 10 mA, NE76118 TYPICAL CHARACTERISTICS (TA = 25 qC) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 80 VGS = 0 V 200 ID - Drain Current - mA Ptot - Total Power Dissipation - mW 250 150 100 60 –0.2 V 40 –0.4 V –0.6 V 20 50 –0.8 V –1.0 V 0 50 100 200 2 3 4 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE FORWARD INSERTION GAIN vs. DRAIN CURRENT 5 VDS = 3 V VDS = 3 V |S21S|2 Forward Insertion Gain - dB 60 40 20 0 –2.0 1 0 TA - Ambient Temperature - ¡C 80 ID - Drain Current - mA 150 20 f = 1 GHz f = 2 GHz 15 10 5 0 –1.0 VGS - Gate to Source Voltage - V 0 1 2 3 5 7 10 20 ID - Drain Current - mA 3 NE76118 S-PARAMETER VDS = 3 V, ID = 10 mA FREQUENCY MHZ S11 MAG. S21 ANG. MAG. (deg.) 4 S12 ANG. MAG. (deg.) S22 ANG. MAG. (deg.) MSG K ANG. (deg.) dB 500 .992 ð12.2 3.647 162.5 .020 83.0 .765 ð5.9 22.6 .17 600 .979 ð14.7 3.618 158.3 .024 83.3 .759 ð7.3 21.8 .23 700 .964 ð17.6 3.594 154.7 .027 81.7 .757 ð9.1 21.2 .29 800 .943 ð20.2 3.536 151.0 .032 80.5 .747 ð10.0 20.5 .38 900 .923 ð22.6 3.510 148.4 .034 81.6 .739 ð11.5 20.1 .41 1000 .911 ð24.9 3.492 145.2 .038 78.7 .736 ð12.0 19.7 .47 1100 .900 ð27.6 3.477 142.4 .043 77.7 .727 ð13.8 19.1 .47 1200 .894 ð29.8 3.473 139.0 .046 76.9 .734 ð14.3 18.8 .49 1300 .885 ð32.5 3.453 135.8 .049 76.0 .724 ð16.0 18.5 .50 1400 .868 ð35.1 3.410 132.2 .054 75.2 .724 ð17.3 18.0 .52 1500 .842 ð37.1 3.359 129.3 .057 74.0 .712 ð18.9 17.7 .58 1600 .817 ð39.9 3.325 125.9 .061 72.9 .707 ð20.1 17.4 .63 1700 .783 ð42.2 3.269 122.8 .064 72.0 .692 ð21.0 17.1 .70 1800 .759 ð45.0 3.235 119.6 .067 71.1 .689 ð22.2 16.8 .73 1900 .734 ð47.6 3.197 116.6 .070 70.1 .676 ð22.7 16.6 .78 2000 .712 ð50.0 3.152 113.3 .074 70.0 .676 ð23.9 16.3 .80 2100 .686 ð51.5 3.086 110.2 .075 68.7 .663 ð25.0 16.1 .87 2200 .680 ð52.6 3.026 107.8 .077 68.2 .653 ð26.7 15.9 .89 2300 .667 ð55.1 3.013 105.2 .081 68.3 .644 ð27.7 15.7 .89 2400 .641 ð58.1 2.999 102.1 .085 68.2 .640 ð29.4 15.5 .89 2500 .612 ð61.0 2.978 99.3 .089 67.3 .631 ð30.6 15.3 .92 2600 .589 ð63.8 2.944 96.3 .092 67.9 .627 ð32.0 15.1 .93 2700 .570 ð66.5 2.904 93.5 .095 67.0 .623 ð32.9 14.9 .95 2800 .556 ð68.9 2.862 90.7 .099 66.9 .620 ð34.1 14.6 .95 2900 .540 ð70.5 2.809 88.0 .102 66.4 .614 ð35.1 14.4 .97 3000 .520 ð72.6 2.768 85.3 .107 66.8 .602 ð36.3 14.1 .98 NE76118 S-Parameter VDS = 3 V, ID = 10 mA START 100 MHz, STOP 3 GHz, STEP 100 MHz S11 1.0 2.0 0.5 MARKERS 1: 1 GHz 2: 2 GHz ∞ 0 2 –0.5 1 –2.0 –1.0 S22 1.0 2.0 0.5 ∞ 0 2 1 –0.5 –2.0 –1.0 5 NE76118 RECOMMENDED SOLDERING CONDITIONS The following conditions (see table below) must be met when soldering this product. Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different conditions. <TYPES OF SURFACE MOUNT DEVICE> For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL” (C10535E). Soldering process Soldering conditions Symbol VPS Package peak temperature : 215 °C, Time : 40 seconds MAX. (200 °C MIN.), Number of times : 2, Number of days : not limited* VP15-00-2 Wave soldering Soldering bath temperature : 260 °C MAX., Time : 10 seconds MAX., Number of times : 1, Number of days : not limited* WS60-00-1 Infrared ray reflow Peak package’s surface temperature: 230 °C or below, Reflow time: 30 seconds or below (210 °C or higher), Number of reflow process: 2, Exposure limit*: None IR30-00-2 Partial heating method Terminal temperature: 230 °C or below, Flow time: 10 seconds or below, Exposure limit*: None * Exposure limit before soldering after dry-pack package is opened. Storage conditions: 25 °C and relative humidity at 65 % or less. Note Do not apply more than a single process at once, except for “Partial heating method”. PRECAUTION Avoid high static voltage and electric fields, because this device is MES FET with GaAs shottky barrier gate. 6 NE76118 [MEMO] 7 NE76118 Caution The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5