NPN SILICON TRANSISTOR NE894M13 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M13 LOW Cre • UHSO 25 GHz PROCESS 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 • 0.35 LOW NOISE, HIGH GAIN 1.0+0.1 ñ0.05 IDEAL FOR > 3 GHz OSCILLATORS • 0.7±0.05 B7 • 0.15+0.1 ñ0.05 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance 0.7 • 0.35 FEATURES 0.1 0.125+0.1 ñ0.05 0.1 0.5±0.05 The NE894M13 transistor is designed for oscillator applications above 3 GHz. The NE894M13 features low voltage, low current operation, low noise, and high gain. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. 0.15+0.1 ñ0.05 DESCRIPTION 0.2 0.2 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT PARAMETERS AND CONDITIONS UNITS MIN TYP MAX GHz 17 20 – Insertion Power Gain at VCE = 1 V, IC = 20 mA, f = 2 GHz dB 11 13 – |NF Noise Figure at VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = ZOPT dB – 1.4 2.5 Cre Reverse Transfer Capacitance3 at VCB = 0.5 V, IE = 0 mA, f = 1 MHz pF – 0.22 0.30 ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 nA – – 100 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA – – 100 hFE DC Current Gain2 at VCE = 1 V, IC = 5 mA 50 – 100 |S21E|2 Gain Bandwidth at VCE = 1 V, IC = 20 mA, f = 2 GHz NE894M13 2SC5787 M13 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Collector to base capacitance when the emitter is grounded California Eastern Laboratories NE894M13 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 9 VCEO Collector to Emitter Voltage V 3.0 VEBO Emitter to Base Voltage V 1.5 Collector Current mA 35 PT2 Total Power Dissipation mW 105 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 IC Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. With device mounted on 1.08 cm2 X 1.0 mm glass epoxy board. TYPICAL PERFORMANCE CURVES (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE REVERSE TRANSFR CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance, Cre (pF) Total Power Dissipation, Ptot (mW) 150 Mounted on Glass epoxy PCB (1.08 cm2 x 1.0 mm (t) ) 125 105 100 75 50 25 0 0 25 50 75 100 125 0.5 f = 1 MHz 0.4 0.3 0.2 0.1 0 0 150 2 6 8 10 Collector to Base Voltage, VCB (V) Ambient Temperature, TA (°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 40 100 VCE = 1 V 500 µA 10 Collector Current, IC (mA) Collector Current, IC (mA) 4 1 0.1 0.01 400 µA 450 µA 350 µA 30 300 µA 250 µA 20 200 µA 150 µA 100 µA 10 0.001 IB = 500 µA 0 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 Base to Emitter Voltage, VBE (V) 1.0 0 1 2 3 4 Collector to Emitter Voltage, VCE (V) 5 NE894M13 TYPICAL PERFORMANCE CURVES (TA = 25°C) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 40 VCE = 1 V f = 2 GHz Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) 24 20 16 12 8 4 VCE = 1 V IC = 20 mA 35 30 MSG MAG 25 20 15 10 |S21e|2 5 0 0 1 100 10 0.1 1 Collector Current, IC (mA) Frequency, f (GHz) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) 20 VCE = 2 V f = 2 GHz 16 MSG MAG 12 8 |S21e|2 4 VCE = 2 V f = 2 GHz MSG 16 12 MAG |S21e|2 8 4 0 0 1 10 1 100 10 100 Collector Current, IC (mA) Collector Current, IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 20 VCE = 1 V f = 4 GHz Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) Insertion Power Gain, |S21e|2 (dB) Maximum Available Gain, MAG(dB) Maximum Stable Gain, MSG(dB) 10 Associated Gain, Ga (dB) Gain Bandwidth Product, fT (GHz) 28 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 16 12 MSG MAG 8 |S21e|2 4 0 1 10 Collector Current, IC (mA) 100 VCE = 2 V f = 4 GHz 16 12 MSG MAG 8 |S21e|2 4 0 1 10 Collector Current, IC (mA) 100 NE894M13 TYPICAL PERFORMANCE CURVES (TA = 25°C) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 20 5 20 3 12 2 8 NF 1 4 4 16 3 12 2 8 NF 1 VCE = 1 V f = 1 GHz 0 0 1 10 Collector Current, IC (mA) 4 VCE = 1 V f = 2 GHz 100 0 0 1 10 Collector Current, IC (mA) 100 Associated Gain, Ga (dB) 16 Noise Figure, NF (dB) Ga 4 Associated Gain, Ga (dB) Noise Figure, NF (dB) Ga NE894M13 TYPICAL SCATTERING PARAMETERS (TA = 25°C) 90˚ j50 120˚ j100 j25 60˚ S21 150˚ j10 0 S12 30˚ S11 10 25 100 50 180˚ 0 0˚ -j10 S22 -150˚ -30˚ -j100 -j25 -120˚ -j50 -60˚ -90˚ 0.100 to 12.000 GHz by 0.050 0.100 to 12.000GHz by 0.050 NE894M13 VC = 1 V, IC = 5 mA FREQUENCY GHz 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 S11 MAG 0.772 0.747 0.715 0.677 0.612 0.575 0.544 0.517 0.493 0.474 0.383 0.362 0.355 0.352 0.339 0.359 0.394 0.432 0.466 0.489 0.489 S21 ANG - 11.0 - 24.6 - 36.5 - 47.7 - 59.5 - 68.8 - 76.9 - 84.6 - 91.3 - 97.3 -135.0 -155.9 -175.7 169.2 158.2 145.9 132.7 121.6 110.0 99.5 92.9 MAG 13.002 12.548 11.948 11.241 10.457 9.699 8.993 8.364 7.756 7.228 4.155 2.920 2.253 1.821 1.561 1.390 1.251 1.137 1.026 0.930 0.878 S12 ANG 169.8 159.5 150.4 142.4 134.1 127.9 122.5 117.7 113.5 109.6 84.4 68.1 54.6 44.0 36.0 28.0 20.9 14.9 10.5 8.9 9.3 MAG 0.011 0.022 0.032 0.040 0.046 0.051 0.056 0.059 0.062 0.065 0.088 0.120 0.162 0.215 0.281 0.358 0.438 0.513 0.569 0.609 0.653 S22 ANG 85.6 76.8 70.6 66.2 61.3 58.2 56.5 54.9 54.1 53.6 58.8 67.4 72.0 73.4 72.6 68.5 62.5 55.6 48.7 43.9 40.4 MAG 0.966 0.928 0.883 0.835 0.758 0.707 0.658 0.623 0.590 0.558 0.411 0.383 0.412 0.476 0.512 0.522 0.523 0.521 0.543 0.572 0.567 ANG - 8.4 - 15.8 - 22.5 - 28.3 - 31.4 - 35.7 - 39.1 - 41.6 - 44.1 - 45.9 - 59.5 - 73.2 - 88.5 - 98.4 -103.6 -114.0 -127.0 -142.1 -157.6 -165.7 -168.8 K MAG1 0.10 0.17 0.22 0.27 0.39 0.44 0.50 0.54 0.59 0.65 1.01 1.10 1.05 0.95 0.86 0.81 0.79 0.80 0.84 0.87 0.90 (dB) 30.55 27.54 25.75 24.50 23.57 22.79 22.09 21.50 20.94 20.46 16.27 11.97 10.08 9.28 7.44 5.89 4.56 3.45 2.56 1.84 1.28 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE894M13 TYPICAL SCATTERING PARAMETERS (TA = 25°C) 90˚ j50 120˚ j100 j25 60˚ S21 150˚ j10 10 0 S12 30˚ S11 25 100 50 180˚ 0 0˚ -j10 S22 -150˚ -30˚ -j100 -j25 -120˚ -j50 -60˚ -90˚ 0.100 to 12.000 GHz by 0.050 0.100 to 4.000GHz by 0.050 NE894M13 VC = 1 V, IC = 20 mA FREQUENCY GHz 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 S11 MAG 0.401 0.374 0.345 0.323 0.290 0.282 0.277 0.274 0.273 0.271 0.272 0.275 0.278 0.268 0.243 0.262 0.300 0.343 0.386 0.417 0.423 S21 ANG - 25.4 - 50.1 - 69.6 - 85.0 -100.7 -111.9 -119.6 -126.5 -132.5 -137.0 -162.0 -176.0 167.1 153.9 146.2 138.9 129.8 122.0 112.1 102.2 96.7 MAG 29.774 26.263 22.629 19.474 16.742 14.691 13.024 11.685 10.574 9.642 5.122 3.539 2.723 2.223 1.922 1.720 1.565 1.439 1.316 1.199 1.123 S12 ANG 160.5 145.4 133.7 124.8 117.7 112.3 108.0 104.4 101.2 98.5 80.3 67.7 56.9 47.9 40.4 32.9 25.9 19.5 13.9 10.5 8.8 MAG 0.009 0.018 0.024 0.029 0.034 0.038 0.043 0.047 0.051 0.056 0.100 0.147 0.196 0.245 0.300 0.360 0.421 0.482 0.532 0.572 0.617 S22 ANG 82.2 74.2 71.0 68.3 67.8 67.6 68.0 68.5 69.0 69.5 72.3 71.6 69.5 66.9 64.6 60.8 56.4 51.5 46.5 42.8 40.2 MAG 0.879 0.786 0.689 0.607 0.506 0.450 0.405 0.374 0.349 0.324 0.228 0.221 0.261 0.331 0.369 0.379 0.384 0.389 0.425 0.472 0.488 ANG - 15.8 - 28.2 - 37.3 - 43.9 - 46.3 - 50.3 - 53.1 - 54.5 - 56.2 - 57.3 - 66.9 - 80.0 - 95.5 -101.9 -102.7 -111.1 -122.9 -136.9 -152.2 -159.8 -161.6 K MAG1 0.40 0.45 0.54 0.63 0.75 0.81 0.86 0.90 0.93 0.95 1.06 1.05 1.03 0.99 0.95 0.91 0.89 0.88 0.88 0.88 0.88 (dB) 35.10 31.74 29.72 28.21 26.95 25.83 24.84 23.94 23.14 22.37 15.65 12.37 10.35 9.58 8.07 6.80 5.70 4.75 3.93 3.21 2.60 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE894M13 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 90˚ 120˚ j100 j25 60˚ S21 150˚ j10 0 S12 30˚ S11 10 25 100 50 180˚ 0 0˚ -j10 S22 -150˚ -30˚ -j100 -j25 -120˚ -60˚ -90˚ -j50 0.100 to 12.000 GHz by 0.050 0.100 to 12.000GHz by 0.050 NE894M13 VC = 2 V, IC = 10 mA FREQUENCY GHz 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 S11 MAG 0.634 0.601 0.559 0.515 0.451 0.417 0.391 0.369 0.351 0.337 0.279 0.266 0.262 0.255 0.237 0.259 0.300 0.347 0.392 0.425 0.433 S21 ANG - 14.2 - 30.0 - 43.3 - 55.3 - 67.4 - 77.1 - 84.8 - 92.2 - 98.6 -104.1 -137.6 -155.9 -175.2 170.3 161.9 151.8 139.9 129.8 117.8 106.1 99.2 MAG 21.168 19.847 18.259 16.598 14.913 13.497 12.240 11.177 10.239 9.431 5.194 3.616 2.787 2.259 1.936 1.731 1.571 1.439 1.303 1.170 1.080 S12 ANG 166.5 154.5 144.2 135.6 127.5 121.5 116.5 112.3 108.5 105.2 83.8 69.6 57.5 47.6 39.8 32.0 24.6 17.8 12.0 8.7 7.5 MAG 0.010 0.017 0.024 0.029 0.034 0.038 0.042 0.045 0.049 0.052 0.084 0.123 0.168 0.217 0.276 0.344 0.418 0.493 0.555 0.600 0.648 S22 ANG 85.7 75.7 70.8 67.6 64.9 63.7 63.5 63.2 63.5 63.9 70.4 74.0 74.7 73.9 72.7 69.3 64.4 58.5 52.3 47.5 44.1 MAG 0.945 0.890 0.826 0.763 0.676 0.621 0.572 0.539 0.510 0.481 0.363 0.345 0.373 0.439 0.483 0.499 0.505 0.508 0.535 0.573 0.581 ANG - 10.0 - 18.5 - 25.6 - 31.2 - 33.5 - 37.1 - 39.6 - 41.3 - 42.9 - 43.9 - 52.7 - 64.5 - 79.7 - 89.6 - 93.7 -102.7 -114.4 -128.5 -144.5 -153.9 -157.6 K MAG1 0.19 0.28 0.36 0.43 0.56 0.62 0.68 0.73 0.78 0.82 1.04 1.05 1.00 0.93 0.86 0.81 0.78 0.77 0.78 0.80 0.82 (dB) 33.43 30.64 28.79 27.51 26.40 25.49 24.65 23.93 23.24 22.61 16.74 13.31 11.92 10.17 8.47 7.02 5.75 4.65 3.71 2.90 2.22 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE894M13 NONLINEAR MODEL SCHEMATIC CCBPKG 0.05 pF CCB 0.01 pF LBPKG 0.05 nH LCPKG 0.05 nH LB 0.3 nH Collector Base CCE Q1 0.4 pF LE 0.42 nH CCEPKG 0.05 pF LEPKG 0.05 nH Emitter BJT NONLINEAR MODEL PARAMETERS(1) Parameters Q1 Parameters Q1 IS 137e-18 MJC 0.24 BF 129 XCJC 0.3 NF 0.9992 CJS 0 VAF 22.4 VJS 0.75 IKF 2.8 MJS 0 ISE 229e-15 FC 0.55 NE 2.5 TF 5e-12 0.05 BR 81.7 XTF NR 0.9944 VTF 0.5 VAR 1.9 ITF 0.005 IKR 0.018 PTF 0 ISC 227e-18 TR 1.0e-9 NC 1.17 EG 1.11 RE 0.75 XTB 0 RB 5 XTI 3 RBM 3 KF 117e-15 IRB 0.005 AF 1.34 RC 6 CJE 0.68e-12 VJE 0.92 MJE 0.26 CJC 0.16e-12 VJC 0.64 ADDITIONAL PARAMETERS Parameters CCB CCE LB LE CCBPKG CCEPKG LBX LCX LEX NE894M13 0.01 pF 0.4 pF 0.3 nH 0.42 nH 0.05 pF 0.05 pF 0.05 nH 0.05 nH 0.05 nH MODEL TEST CONDITIONS Frequency: 0.1 to 10 GHz Bias: VCE = 0.5 V to 2 V, IC = 0.5 mA to 20 mA Date: 11/2001 (1) Gummel-Poon Model Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 03/18/2002