CEL NE66719-T1

NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
NE66719
OUTLINE DIMENSIONS (Units in mm)
•
HIGH GAIN BANDWIDTH: fT = 21 GHz
•
LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz
1.6±0.1
•
HIGH MAXIMUM GAIN: 20 dB at f = 2 GHz
0.8±0.1
PACKAGE OUTLINE 19
+0.1
0.3 -0
0.2
+0.1
-0
0.5
1.0
1.6±0.1
NEC's NE66719 is fabricated using NEC's UHS0 25 GHz fT
wafer process. This device is ideal for oscillator or low noise
amplifier applications at 2 GHz and above.
UB
DESCRIPTION
0.5
2
3
+0.1
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
0.15 -0.05
0 to 0.1
0.6
0.75±0.05
1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
DC
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
ICBO
Collector Cutoff Current at VCB = 5V, IE = 0
nA
100
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
100
hFE
Forward Current Gain2 at VCE = 2 V, IC = 5 mA
fT
Gain Bandwidth at VCE = 2 V, IC = 20 mA, f = 2 GHz
GHz
Maximum Available Power Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz
MAG
RF
NE66719
2SC55667
19
Gain5
at VCE = 2 V, IC = 20 mA, f = 2 GHz
50
70
18
21
dB
12.5
MSG
Maximum Stable
|S21e|2
Insertion Power Gain at VCE = 1 V, IC = 10 mA, f = 2 GHz
dB
9.0
11.0
|S21e|2
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz
dB
9.5
11.5
dB
NF
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZOPT
IP3
Third Order Intercept Point at VCE = 2 V, IC = 20 mA, f = 2 GHz
Cre
Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz
100
dB
13.5
1.1
1.5
22
pF
0.24
0.30
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
4. MAG = S21 (K- (K2 -1) )
S12
5. MSG =
S21
S12
California Eastern Laboratories
NE66719
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
15
VCEO
Collector to Emitter Voltage
V
3.3
VEBO
Emitter to Base Voltage
V
1.5
IC
Collector Current
mA
35
PT
Total Power Dissipation2
mW
115
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy substrate.
TYPICAL NOISE PARAMETERS (TA = 25˚C)
FREQ.
(GHz)
NFMIN
(dB)
GA
(dB)
MAG
ANG
18.1
16.3
13.2
11.9
11.1
9.6
0.37
0.36
0.31
0.26
0.23
0.16
22.9
29.3
46.7
60.0
70.8
107.0
0.22
0.21
0.19
0.16
0.15
0.12
18.5
16.7
13.5
12.2
11.4
9.8
0.24
0.23
0.18
0.14
0.11
0.06
19.6
26.6
41.2
54.6
68.2
128.5
0.19
0.18
0.17
0.15
0.14
0.12
19.1
17.0
13.8
12.5
11.7
9.9
0.13
0.12
0.06
0.03
0.02
0.07
35.5
11.3
27.3
75.9
119.0
-115.5
0.17
0.17
0.16
0.14
0.14
0.14
19.1
17.4
13.9
12.5
11.7
10.1
0.04
0.03
0.04
0.07
0.09
0.16
-59.8
117.5
-75.8
-88.8
-112.4
-112.0
0.16
0.15
0.16
0.16
0.15
0.15
19.2
17.3
14.0
12.6
11.8
10.2
0.15
0.18
0.22
0.24
0.24
0.27
-146.7
-138.6
-126.0
-121.9
-119.9
-115.1
0.16
0.16
0.18
0.19
0.20
0.22
ΓOPT
Rn/50
VCE = 2 V, IC = 3 mA
0.8
1.0
1.5
1.8
2.0
2.5
0.83
0.86
0.93
0.97
1.00
1.07
VCE = 2 V, IC = 5 mA
0.8
1.0
1.5
1.8
2.0
2.5
0.88
0.91
0.96
1.00
1.02
1.08
VCE = 2 V, IC = 7 mA
ORDERING INFORMATION
PART NUMBER
NE66719
NE66719-T1
QUANTITY
Bulk
3k pcs/reel
PACKAGING
8 mm wide embossed taping
Pin 3 (collector) faces
the perforation
0.8
1.0
1.5
1.8
2.0
2.5
1.07
1.09
1.13
1.16
1.17
1.22
VC = 2 V, IC = 10 mA
0.8
1.0
1.5
1.8
2.0
2.5
1.25
1.27
1.31
1.34
1.35
1.40
VC = 2 V, IC = 20 mA
0.8
1.0
1.5
1.8
2.0
2.5
1.69
1.70
1.74
1.77
1.78
1.83
NE66719
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.5
Reverse Transfer Capacitance Cre
Total Power Dissipation, Ptot (mW)
200
Mounted on Glass Epoxy Board
(1.08 cm2 x 1.0 mm (t) )
200
115
100
50
0
25
50
75
100
125
f = 1 MHz
0.4
0.3
0.2
0.1
0
150
1
2
3
5
4
Ambient Temperature, TA (°C)
Collector to BaseVoltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
40
IB 50 µA step
VCE = 2 V
Collector Current, lC (mA)
Collector Current, IC (mA)
450 µA
30
20
10
30
20
250 µA
10
IB = 50 µA
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BANDWIDTH vs.
COLLECTOR CURRENT
25
f = 2 GHz
Gain Bandwdth, fT (GHz)
VCE = 2 V
DC Current Gain, hFE
5
Collector to Emitter Voltage, VcE (V)
1000
100
10
0.001
4
Base to Emitter Voltage, VBE (V)
20
2V
15
10
VCE = 1 V
5
0
0.01
0.1
1
10
Collector Current, IC (mA)
100
1
10
Collector Current, IC (mA)
100
NE66719
TYPICAL PERFORMANCE CURVES (TA = 25°C)
40
VCE = 1 V
IC = 20 mA
35
30
25
MSG
S21e
2
20
MAG
15
10
5
0
0.1
1
INSERTION POWER GAIN, MAXIMUM
AVAILABLE POWER GAIN, MAXIMUM
STABLE POWER GAIN vs. FREQUENCY
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Power Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Power Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
INSERTION POWER GAIN, MAXIMUM
AVAILABLE POWER GAIN, MAXIMUM
STABLE POWER GAIN vs. FREQUENCY
10
40
VCE = 2 V
IC = 20 mA
35
30
25
S21e
MAG
15
10
5
0
0.1
1
Frequency, f (GHz)
INSERTION POWER GAIN, MAXIMUM
AVAILABLE POWER GAIN, MAXIMUM STABLE
POWER GAIN vs. COLLECTOR CURRENT
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Power Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Power Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
20
VCE = 1 V
f = 2 GHz
16
MAG
MSG
14
12
S21e
10
2
8
6
4
2
1
0
Frequency, f (GHz)
INSERTION POWER GAIN, MAXIMUM
AVAILABLE POWER GAIN, MAXIMUM STABLE
POWER GAIN vs. COLLECTOR CURRENT
18
MSG
2
20
10
20
VCE = 2 V
f = 2 GHz
18
16
MAG
MSG
14
12
S21e
8
6
4
2
0
1
100
10
100
Collector Current, IC (mA)
Collector Current, IC (mA)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
30
30
100
100
VCE = 1 V, f = 2 GHz
Icq = 5 mA (RF OFF)
20
80
10
60
Pout
0
40
IC
-10
20
Output Power, Pout (dBm)
VCE = 2 V, f = 1 GHz
Icq = 5 mA (RF OFF)
Output Power, Pout (dBm)
2
10
20
80
10
60
Pout
0
40
-10
20
IC
-20
-30
-20
-10
0
10
Input Power, Pin (dBm)
0
20
-20
-30
-20
-10
0
10
Input Power, Pin (dBm)
0
20
NE66719
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10
10
25
25
VCE = 2 V
f = 1 GHz
6
15
4
10
2
5
8
20
Ga
6
15
4
10
2
5
NF
NF
0
100
10
1
Collector Current, IC (mA)
10
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10
0
100
0
10
25
25
VCE = 2 V
f = 2.5 GHz
20
6
15
Ga
4
10
2
5
Noise Figure, NF (dB)
Noise Figure, NF (dB)
8
Associated Gain, Ga (dB)
VCE = 2 V
f = 2 GHz
8
20
6
15
Ga
4
10
2
5
NF
NF
0
1
10
0
100
Collector Current, IC (mA)
Remark The graphs indicate nominal characteristics.
0
1
10
Collector Current, IC (mA)
0
100
Associated Gain, Ga (dB)
0
1
Associated Gain, Ga (dB)
20
Ga
Noise Figure, NF (dB)
Noise Figure, NF (dB)
8
Associated Gain, Ga (dB)
VCE = 2 V
f = 1.5 GHz
NE66719
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
VDS = 1 V, IC = 5 mA, ZO = 50 Ω
FREQUENCY
S11
GHz
MAG
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
4.0
5.0
6.0
7.0
8.0
0.822
0.793
0.738
0.678
0.614
0.553
0.501
0.449
0.409
0.369
0.340
0.312
0.285
0.261
0.241
0.223
0.210
0.187
0.180
0.170
0.167
0.162
0.160
0.163
0.165
0.167
0.174
0.175
0.178
0.182
0.339
0.530
0.623
0.713
0.772
S21
ANG
-12.2
-21.9
-31.8
-39.8
-48.4
-54.5
-60.3
-65.5
-70.1
-75.3
-79.2
-83.2
-88.5
-92.3
-97.8
-101.6
-107.6
-113.6
-119.9
-127.5
-134.5
-140.7
-146.2
-154.2
-158.4
-163.3
-169.0
-173.8
-179.0
173.3
139.7
117.8
103.9
90.6
85.2
MAG
12.268
11.711
10.871
10.101
9.228
8.389
7.694
7.051
6.534
6.062
5.677
5.310
4.979
4.694
4.421
4.224
4.011
3.825
3.653
3.513
3.392
3.255
3.142
3.041
2.938
2.853
2.774
2.687
2.616
2.548
2.015
1.546
1.261
0.996
0.828
S12
ANG
167.4
156.4
146.2
136.6
128.3
121.1
115.3
110.0
104.8
100.4
96.3
92.4
88.7
85.3
82.2
79.1
76.1
73.3
70.4
67.5
65.1
62.8
59.9
57.4
55.2
52.7
50.6
48.2
46.0
43.9
21.3
-0.8
-14.3
-30.5
-33.0
S22
MAG
ANG
MAG
0.016
0.030
0.043
0.054
0.062
0.070
0.077
0.083
0.089
0.094
0.100
0.105
0.110
0.116
0.122
0.128
0.134
0.140
0.147
0.154
0.160
0.167
0.174
0.182
0.189
0.197
0.204
0.212
0.220
0.229
0.321
0.398
0.443
0.476
0.495
83.6
76.8
71.4
67.3
64.0
61.5
59.8
58.9
58.1
57.9
57.6
57.5
57.4
57.4
57.4
57.5
57.6
57.6
57.2
57.3
57.4
57.1
57.0
56.7
56.2
55.8
55.4
54.8
54.1
53.6
43.7
30.5
17.7
5.6
-2.3
0.970
0.933
0.878
0.816
0.753
0.692
0.637
0.592
0.552
0.516
0.486
0.460
0.435
0.413
0.396
0.379
0.364
0.350
0.337
0.326
0.315
0.306
0.298
0.289
0.280
0.275
0.269
0.265
0.259
0.253
0.301
0.451
0.585
0.693
0.752
ANG
-8.8
-17.5
-25.2
-32.0
-37.6
-42.4
-46.3
-49.7
-52.7
-55.3
-57.8
-60.0
-62.1
-64.5
-66.6
-68.8
-70.9
-73.1
-75.5
-78.1
-80.6
-83.5
-86.4
-89.7
-93.3
-97.1
-101.3
-105.0
-108.6
-113.3
-166.8
154.0
130.4
112.1
99.3
NE66719
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
VDS = 2 V, IC = 5 mA, ZO = 50 Ω
FREQUENCY
GHz
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
4.0
5.0
6.0
7.0
8.0
S11
MAG
0.845
0.821
0.769
0.712
0.654
0.596
0.539
0.492
0.450
0.409
0.378
0.347
0.322
0.295
0.272
0.254
0.233
0.212
0.200
0.183
0.177
0.168
0.163
0.160
0.156
0.157
0.158
0.154
0.151
0.156
0.297
0.504
0.605
0.704
0.767
S21
ANG
-9.9
-19.3
-27.8
-35.8
-43.2
-48.8
-53.8
-58.6
-62.4
-66.4
-70.4
-73.8
-77.2
-80.9
-84.3
-87.4
-91.3
-96.3
-100.3
-106.4
-113.6
-118.9
-121.6
-130.8
-137.4
-140.2
-146.1
-153.9
-158.8
-167.1
149.1
123.2
107.5
93.5
87.3
MAG
11.956
11.451
10.734
10.039
9.282
8.499
7.844
7.217
6.715
6.309
5.886
5.532
5.212
4.914
4.645
4.437
4.220
4.028
3.851
3.710
3.579
3.441
3.319
3.222
3.120
3.031
2.945
2.861
2.781
2.705
2.171
1.700
1.371
1.082
0.877
S12
ANG
168.4
158.1
148.4
139.3
131.4
124.2
118.2
113.2
107.9
103.5
99.4
95.4
91.8
88.4
85.0
81.8
79.0
76.0
73.2
70.5
67.9
65.6
62.9
60.4
58.1
55.8
53.5
51.3
49.1
46.8
24.0
1.0
-13.7
-30.8
-33.9
S22
MAG
ANG
MAG
0.014
0.027
0.039
0.049
0.057
0.065
0.071
0.077
0.083
0.088
0.093
0.098
0.103
0.109
0.114
0.120
0.126
0.131
0.138
0.145
0.151
0.158
0.165
0.172
0.179
0.187
0.194
0.202
0.210
0.219
0.316
0.401
0.453
0.488
0.506
86.8
79.0
73.5
69.2
66.3
63.6
62.1
60.9
60.4
59.9
59.7
59.5
59.5
59.5
59.6
59.7
59.9
60.0
59.9
60.0
60.2
60.1
59.9
59.7
59.4
59.2
58.7
58.3
57.6
57.1
47.7
34.0
20.3
7.3
-1.2
0.978
0.947
0.901
0.846
0.789
0.734
0.682
0.637
0.600
0.564
0.533
0.507
0.484
0.461
0.443
0.426
0.411
0.397
0.384
0.373
0.361
0.352
0.344
0.335
0.324
0.319
0.312
0.306
0.299
0.290
0.312
0.448
0.587
0.701
0.760
ANG
-7.7
-15.3
-22.3
-28.4
-33.6
-38.0
-41.8
-45.0
-47.6
-50.1
-52.4
-54.5
-56.6
-58.6
-60.5
-62.3
-64.2
-66.2
-68.2
-70.4
-72.5
-75.2
-77.6
-80.3
-83.4
-86.8
-90.3
-93.3
-96.5
-100.5
-152.1
163.8
136.6
116.1
102.0
NE66719
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
VDS = 2 V, IC = 20 mA, ZO = 50 Ω
FREQUENCY
GHz
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
4.0
5.0
6.0
7.0
8.0
S11
MAG
0.660
0.585
0.505
0.444
0.381
0.328
0.287
0.255
0.228
0.202
0.181
0.161
0.148
0.135
0.117
0.106
0.098
0.085
0.074
0.070
0.071
0.066
0.071
0.079
0.079
0.087
0.094
0.098
0.102
0.111
0.279
0.484
0.577
0.684
0.757
S21
ANG
-16.7
-28.5
-39.1
-46.6
-53.2
-57.1
-60.5
-63.8
-66.4
-69.7
-72.3
-74.2
-77.6
-82.0
-83.8
-87.9
-94.4
-101.7
-108.3
-118.5
-131.9
-145.1
-147.6
-160.0
-168.3
-169.9
-176.2
176.4
170.7
161.5
137.1
117.4
104.4
92.6
86.6
MAG
21.907
19.701
17.100
14.863
12.907
11.320
10.052
9.004
8.170
7.508
6.927
6.421
5.974
5.611
5.262
4.994
4.720
4.482
4.274
4.102
3.958
3.794
3.648
3.531
3.406
3.301
3.212
3.110
3.024
2.945
2.345
1.854
1.555
1.265
1.058
S12
ANG
161.6
146.5
134.4
124.2
116.5
110.0
105.0
100.7
96.5
93.0
89.8
86.5
83.8
81.0
78.5
75.9
73.7
71.2
68.8
66.4
64.3
62.5
60.1
58.0
56.0
53.8
52.2
50.1
48.1
46.0
26.1
5.5
-8.8
-26.0
-31.5
S22
MAG
ANG
MAG
0.012
0.024
0.033
0.041
0.048
0.055
0.062
0.069
0.076
0.083
0.090
0.097
0.104
0.111
0.119
0.126
0.134
0.142
0.150
0.158
0.166
0.174
0.182
0.190
0.198
0.207
0.215
0.223
0.231
0.240
0.329
0.402
0.446
0.480
0.499
80.0
76.1
73.2
70.8
70.0
69.3
69.3
69.3
69.2
69.1
69.0
68.8
68.4
68.0
67.6
67.2
66.7
66.2
65.4
64.9
64.3
63.6
62.9
62.0
61.1
60.2
59.4
58.4
57.4
56.5
44.7
31.3
18.6
6.6
-1.5
0.931
0.852
0.761
0.678
0.607
0.551
0.505
0.470
0.442
0.419
0.399
0.382
0.367
0.352
0.341
0.330
0.320
0.309
0.301
0.293
0.284
0.277
0.271
0.263
0.253
0.248
0.241
0.235
0.228
0.219
0.238
0.375
0.515
0.641
0.709
ANG
-11.7
-22.2
-30.0
-35.3
-38.9
-41.6
-43.4
-44.9
-46.2
-47.4
-48.7
-50.0
-51.3
-52.8
-54.4
-55.9
-57.4
-59.2
-61.2
-63.4
-65.5
-68.1
-70.7
-73.6
-76.9
-80.5
-84.3
-87.7
-91.3
-95.6
-155.9
159.4
135.1
116.5
103.3
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
10/23/02
A Business Partner of NEC Compound Semiconductor Devices, Ltd.