NEC NEL2004F02-24

DATA SHEET
SILICON POWER TRANSISTOR
NEL2004F02-24
NPN SILICON EPITAXIAL TRANSISTOR
L Band Power Amplifier
is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.
It incorporates emitter ballast resistors, gold metallizations and
2
2 ±0.2 3 ±0.2 2 ±0.2
2 × φ 3.2 ±0.3
1
1
offers a high degree of reliability.
1
1
3
3.6 ±0.5 3.6 ±0.5
• High Linear Power and Gain
4.2 ±0.4 0.1 +0.05
–0.02
• Low Internal Modulation Distortion
• High Reliability Gold Metallization
• Emitter Ballasting
• 24 V Operation
12.4 ±0.2
9.2 ±0.2
4.6 ±0.2
2.4 ±0.2
FEATURES
6.1 ±0.3
NEL2004F02-24 of NPN epitaxial microwave power transistors
5.85 ±0.2 2.58 ±0.3
OUTLINE DIMENSIONS (Unit: mm)
DESCRIPTION AND APPLICATIONS
1 - EMITTER
2 - BASE
3 - COLLECTOR
ABSOLUTE MAXIMUM RATING (TA = 25 ˚C)
PARAMETER
SYMBOL
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCER
Emitter to Base Voltage
Collector to Emitter Voltage
RATINGS
UNIT
45
V
30
V
VEBO
3
V
VCEO
18
V
Collector Current
IC
1.5
A
Power Dissipation
PT
19.4
W
Rth(j-c)
9
˚C/W
Junction Temperature
Tj
200
˚C
Storage Temperature
Tstg
–65 to 150
˚C
Thermal Resistance
Document No. P11582EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
SPECIFIED CONDITION
R = 10 Ω
©
1996
NEL2004F02-24
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
2
PARAMETER
SYMBOL
SPECIFIED CONDITION
Collector to Emitter Cutoff
Current
ICES
V CE = 24 V
Collector to Emitter Voltage
(Base to Emitter Registor = 10 Ω)
VCER
IC = 3 mA, R = 10 Ω
30
85
V
Collector to Emitter Voltage
(Open Base)
V CEO
IC = 3 mA
18
22
V
Collector to Base Voltage
(Open Emitter)
V CBO
IC = 3 mA
45
85
V
Emitter to Base Voltage
(Open Collector)
VEBO
IC = 8 mA
3
4.4
V
30
100
DC Forward Current Gain
hFE
V CE = 5 V, IC = 0.3 A
Output Capacitance
Cob
VCE = 24 V, f = 1 MHz
MIN.
TYP.
6.2
MAX.
UNIT
3
mA
150
pF
NEL2004F02-24
PERFORMANCE SPECIFICATIONS (TA = 25 ˚C)
CLASS AB OPERATION
PARAMETER
SYMBOL
SPECIFIED CONDITION
MIN.
TYP.
MAX.
UNIT
Output Power
PIdB
f = 1.97 GHz, Iq = 40 mA,
VCC = 24 V, CLASS AB
5
7
W
Collector Efficiency
ηc
f = 1.97 GHz, Pout = P IdB, Iq = 40 mA,
VCC = 24 V, CLASS AB
40
46
%
Linear Gain
GL
f = 1.97 GHz, Pin = 0.2 W, Iq = 40 mA,
VCC = 24 V, CLASS AB
9.5
dB
3rd Order Intermodulation
IM3
f = 1.97 GHz, ∆f = 100 kHz, 5 W PEP,
VCC = 24 V, Iq = 40 mA, CLASS AB
–34
dBc
CLASS A OPERATION
PARAMETER
SYMBOL
SPECIFIED CONDITION
MIN.
TYP.
MAX.
UNIT
Output Power
PIdB
f = 1.97 GHz, Iq = 250 mA,
VCC = 20 V, CLASS A
2
W
Collector Efficiency
ηc
f = 1.97 GHz, Pout = PIdB, Iq = 250 mA,
VCC = 20 V, CLASS A
35
%
Linear Gain
GL
f = 1.97 GHz, Pin = 0.01 W, Iq = 250 mA,
VCC = 20 V, CLASS A
12
dB
3rd Order Intermodulation
IM3
f = 1.97 GHz, ∆f = 100 kHz, 1 W PEP,
VCC = 20 V, Iq = 250 mA, CLASS A
–37
dBc
3
NEL2004F02-24
Gain (dB)
f = 1970 MHz
13
12
Class AB, Vcc = 24 V
Iq = 40 mA
11
Class A, Vcc = 20 V
Iq = 250 mA
10
9
η c (%)
8
50
40
30
20
1W
4W
Pout (dBm)
20
24
28
32
36
38
f1 = 1970 MHz
f2 = 1970.1 MHz
–25
Class AB, Vcc = 24 V
Iq = 40 mA
–30
Class A, Vcc = 20 V
Iq = 250 mA

 IM3

–35

 IM5

IM (dBc)
–40

 IM7

–45
–50
–55
–60
20
24
28
32
Pout (dBm) ··· PEP
4
36
40
NEL2004F02-24
S-PARAMETER
NEL2004 Class A
VCC = 20 V, Icq = 0.25 A
FREQUENCY
GHz
MAG
1.70
1.71
1.72
1.73
1.74
1.75
1.76
1.77
1.78
1.79
1.80
1.81
1.82
1.83
1.84
1.85
1.86
1.87
1.88
1.89
1.90
1.91
1.92
1.93
1.94
1.95
1.96
1.97
1.98
1.99
2.00
0.70
0.69
0.69
0.69
0.69
0.69
0.69
0.69
0.69
0.69
0.69
0.69
0.69
0.70
0.69
0.70
0.70
0.70
0.70
0.70
0.71
0.71
0.71
0.71
0.72
0.72
0.73
0.73
0.73
0.74
0.74
S11
ANG (DEG)
171
171
172
172
172
173
173
173
173
174
174
175
175
175
175
175
176
176
176
177
177
177
177
178
178
178
178
178
179
179
179
MAG
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.04
0.04
0.05
0.05
0.05
0.04
0.04
0.04
0.04
0.04
0.04
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.02
S12
ANG (DEG)
–26
–26
–27
–29
–30
–31
–31
–32
–33
–35
–37
–37
–38
–45
–49
–50
–46
–46
–47
–49
–50
–51
–52
–54
–55
–57
–58
–60
–61
–62
–64
S21
MAG
S22
ANG (DEG)
1.68
1.70
1.71
1.71
1.69
1.67
1.65
1.66
1.67
1.67
1.65
1.62
1.60
1.61
1.62
1.62
1.60
1.56
1.54
1.55
1.56
1.56
1.53
1.50
1.48
1.48
1.48
1.47
1.45
1.44
1.42
–16
–18
–19
–20
–22
–23
–24
–25
–26
–28
–30
–31
–32
–32
–34
–35
–38
–38
–39
–39
–41
–43
–46
–46
–47
–47
–49
–50
–52
–53
–54
MAG
ANG (DEG)
0.77
0.78
0.79
0.79
0.80
0.81
0.81
0.82
0.83
0.84
0.84
0.85
0.85
0.86
0.87
0.87
0.88
0.89
0.89
0.90
0.90
0.91
0.92
0.92
0.92
0.93
0.93
0.94
0.94
0.94
0.95
–149
–150
–150
–150
–150
–151
–151
–151
–152
–152
–152
–153
–153
–153
–154
–154
–155
–155
–156
–156
–157
–157
–158
–158
–159
–159
–160
–160
–161
–161
–162
NEL2004 Class AB
VCC = 24 V, Icq = 0.04 A
FREQUENCY
GHz
MAG
1.70
1.71
1.72
1.73
1.74
1.75
1.76
1.77
1.78
1.79
1.80
1.81
1.82
1.83
1.84
1.85
1.86
1.87
1.88
1.89
1.90
1.91
1.92
1.93
1.94
1.95
1.96
1.97
1.98
1.99
2.00
0.75
0.75
0.75
0.75
0.74
0.74
0.74
0.73
0.73
0.73
0.73
0.73
0.73
0.73
0.72
0.72
0.72
0.72
0.72
0.72
0.72
0.72
0.72
0.72
0.72
0.72
0.72
0.72
0.72
0.72
0.72
S11
ANG (DEG)
167
167
167
167
167
167
168
168
168
168
168
169
169
169
169
169
169
170
170
170
170
170
171
171
171
172
172
172
173
173
173
MAG
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.02
0.02
0.02
0.02
S12
ANG (DEG)
–26
–27
–28
–29
–30
–30
–30
–31
–33
–35
–36
–39
–41
–42
–42
–43
–45
–45
–46
–48
–50
–52
–52
–53
–54
–57
–59
–61
–62
–64
–66
S21
MAG
1.09
1.11
1.11
1.12
1.11
1.10
1.09
1.09
1.11
1.11
1.10
1.09
1.08
1.08
1.09
1.10
1.08
1.06
1.05
1.06
1.07
1.07
1.06
1.04
1.03
1.03
1.04
1.03
1.02
1.01
1.00
S22
ANG (DEG)
–25
–26
–28
–29
–31
–32
–33
–33
–34
–36
–39
–40
–41
–41
–42
–44
–46
–47
–48
–48
–50
–52
–54
–55
–56
–56
–58
–60
–61
–63
–64
MAG
ANG (DEG)
0.87
0.87
0.88
0.88
0.88
0.89
0.89
0.89
0.90
0.90
0.91
0.91
0.91
0.92
0.92
0.92
0.93
0.93
0.94
0.94
0.94
0.94
0.95
0.95
0.95
0.95
0.96
0.96
0.96
0.96
0.97
–148
–149
–149
–149
–149
–150
–150
–150
–151
–151
–152
–152
–152
–153
–153
–153
–154
–154
–155
–155
–155
–156
–156
–157
–157
–158
–158
–159
–159
–160
–160
5
NEL2004F02-24
1.8
0.6
1.6
1.4
1.2
0.9
0.8
0 .7
1.0
NEL2004F02-24 Zin/Zout
0.5
2.0
0.2
4
0.
ER
EA C
T
 + ANCE
 JX C
Zo  O M
PO

NE
NT
0.4
0.3
0.8
2
3
5.0
0
1.
Zin
1
4.0
1.0
0.
8
POS
ITIV
0
3.
0.6
4
0.2
0.6
10
0.1
0.4
20
0.6
0
NE
GA
1.8
2.0
0.5
0.4
1.4
1.2
1.0
0.9
0.8
0.7
1.6
0.6
0.2
ZO = 50 ohm
Zin [ohm]
f [GHz]
Zout [ohm]
1.80
7.2 + j11
4.8 – j8.4
1.90
8.0 + j10
4.1 – j7.8
1.97
10.4 + j11
3.7 – j7.4
2.00
13.5 + j11
3.0 – j6.1
Zout
Zin
50
20
10
0
1.
CE
AN
CT JX  
A
E –
E R  Zo

TIV
CO
0.8
4
0.
6
5.0
4.0
3.0
1.8
2.0
1.6
1.4
1.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
EN T
ON
MP
1.0
0.3
3.
0
0.2
8
0.
4.0
0.2
0.6
2 1
5.0
3
10
20
0.4
Zout
4
50
50
0.1
0.2
0.1
1: 1.8 GHz
2: 1.9
3: 1.97
RESISTANCE COMPONENT
R
4: 2.0
0.2
 Zo 
NEL2004F02-24
Circuit Drawing
40 mm
,
,
,
,
,
,
,
,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,,
,,,,,,,,,
,,,,,,,,,
40 mm
Thru
hole
1 mmφ
×4
1
1
6
1
1
5
15
0.5 0.5
2
28
8
22
2.3
6
3.3
7.6
50 mm
2
3.3
1
3
2
1
3.15
6
3
1
1
5
1
2
1
2
15
8
6
22
1
3
6
1
1
6
14
15
1 3
121
input
output
SUBSTRATE
DICLAD 522T®
 THICKNESS = 0.79 mm
 DOUBLE SIDE 35 µ m Cu
 ε r = 2.6
7
NEL2004F02-24
Components Layout
VBB
C4
D1
–
VCC
R1
C2
R2
L1
C3
C1
C5
input
R1: 5.1 Ω
R2: 30 Ω
L1: 5 mmφ 10T Coil
8
output
D1: VO6C
C1, C2, C3, C5: MURATA
47 pF
C4: 22 µ F, 50 V
Electrolytic Capacitor
NEL2004F02-24
APPLICATION
= Amplifier Diagrams =
46 mW
30 W
NEL2001
NEL2012
NEL2035
NEL2035 × 2
95 mW
NEL2001
50 W
NEL2012
NEL2035 × 4
40 mW
100 W
NEL2004
NEL2012
NEL2035
9
NEL2004F02-24
[MEMO]
10
NEL2004F02-24
[MEMO]
11
NEL2004F02-24
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5