DATA SHEET SILICON POWER TRANSISTOR NEL200101-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier NEL2001012-24 of NPN epitaxial microwave power transistors 1.5 ±0.2 is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. 1.0 MIN. OUTLINE DIMENSIONS (Unit: mm) DESCRIPTION AND APPLICATIONS 3 It incorporates emitter ballast resistors, gold metallizations and 10 ±0.3 offers a high degree of reliability. FEATURES φ 7 ±0.3 • High Linear Power and Gain • Low Internal Modulation Distortion 1.0 MIN. 2 2 ±0.2 1.2 –0.1 3.0 6.2 ±0.2 0.2 1.6 ±0.3 +0.06 • 24 V Operation 0.1 –0.04 • Emitter Ballasting +0.2 • High Reliability Gold Metallization 1 ABSOLUTE MAXIMUM RATING (TA = 25 ˚C) PARAMETER SYMBOL Collector to Base Voltage VCBO Collector to Emitter Voltage VCER Emitter to Base Voltage Collector to Emitter Voltage RATINGS UNIT 45 V 30 V VEBO 3 V VCEO 18 V Collector Current IC 0.5 A Power Dissipation PT 7.4 W Rth(j-c) 23.6 ˚C/W Junction Temperature Tj 200 ˚C Storage Temperature Tstg –65 to 150 ˚C Thermal Resistance Document No. P11581EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan SPECIFIED CONDITION 1 - EMITTER 2 - BASE 3 - COLLECTOR R = 10 Ω © 1996 NEL200101-24 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) 2 PARAMETER SYMBOL SPECIFIED CONDITION Collector to Emitter Cutoff Current ICES V CE = 24 V Collector to Emitter Voltage (Base to Emitter Registor = 10 Ω) VCER IC = 1 mA, R = 10 Ω 30 85 V Collector to Emitter Voltage (Open Base) V CEO IC = 1 mA 18 22 V Collector to Base Voltage (Open Emitter) V CBO IC = 1 mA 45 85 V Emitter to Base Voltage (Open Collector) VEBO IC = 3 mA 3 4.4 V 30 100 DC Forward Current Gain hFE V CE = 5 V, IC = 0.1 A Output Capacitance Cob VCE = 24 V, f = 1 MHz MIN. TYP. 3 MAX. UNIT 1 mA 150 pF NEL200101-24 PERFORMANCE SPECIFICATIONS (TA = 25 ˚C) CLASS AB OPERATION PARAMETER SYMBOL SPECIFIED CONDITION MIN. TYP. MAX. UNIT Output Power PIdB f = 1.97 GHz, Iq = 20 mA, VCC = 24 V, CLASS AB 2.5 W Collector Efficiency ηc f = 1.97 GHz, Pout = P IdB, Iq = 20 mA, VCC = 24 V, CLASS AB 54 % Linear Gain GL f = 1.97 GHz, Pin = 0.04 W, Iq = 20 mA, VCC = 24 V, CLASS AB 8.8 dB 3rd Order Intermodulation IM3 f = 1.97 GHz, ∆f = 100 kHz, 2 W PEP, VCC = 24 V, Iq = 20 mA, CLASS AB –33 dBc CLASS A OPERATION PARAMETER SYMBOL SPECIFIED CONDITION MIN. TYP. MAX. UNIT 0.5 0.7 W 30 % Output Power PIdB f = 1.97 GHz, Iq = 100 mA, VCC = 20 V, CLASS A Collector Efficiency ηc f = 1.97 GHz, Pout = PIdB, Iq = 100 mA, VCC = 20 V, CLASS A Linear Gain GL f = 1.97 GHz, Pin = 0.01 W, Iq = 100 mA, VCC = 20 V, CLASS A 10.8 dB 3rd Order Intermodulation IM3 f = 1.97 GHz, ∆f = 100 kHz, 0.5 W PEP, VCC = 20 V, Iq = 100 mA, CLASS A –36 dBc 3 NEL200101-24 Gain (dB) f = 1970 MHz 11 10 Class AB, Vcc = 24 V Iq = 20 mA 9 Class A, Vcc = 20 V Iq = 100 mA 8 7 60 η c (%) 50 40 30 20 0.5 W 1.0 W Pout (dBm) 20 24 28 32 36 f1 = 1970 MHz f2 = 1970.1 MHz –25 Class AB, Vcc = 24 V Iq = 20 mA –30 Class A, Vcc = 20 V Iq = 100 mA IM3 –35 IM5 IM (dBc) –40 IM7 –45 –50 –55 –60 20 24 28 32 Pout (dBm) ··· PEP 4 36 40 NEL200101-24 S-PARAMETER NEL2001 Class A VCC = 20 V, Icq = 0.1 A FREQUENCY GHz MAG 1.70 1.71 1.72 1.73 1.74 1.75 1.76 1.77 1.78 1.79 1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 1.89 1.90 1.91 1.92 1.93 1.94 1.95 1.96 1.97 1.98 1.99 2.00 0.75 0.75 0.74 0.74 0.74 0.74 0.74 0.74 0.74 0.74 0.74 0.74 0.74 0.74 0.74 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 0.75 S11 ANG (DEG) 130 129 129 128 128 127 127 127 126 126 125 125 124 124 124 124 123 122 122 122 121 121 120 120 119 119 119 118 118 118 117 MAG 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.07 0.07 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.08 S12 ANG (DEG) –7 –6 –6 –7 –7 –7 –6 –7 –7 –8 –8 –9 –10 –7 –6 –6 –8 –9 –9 –10 –9 –9 –10 –10 –10 –10 –10 –9 –9 –10 –11 S21 S22 MAG ANG (DEG) MAG ANG (DEG) 2.08 2.07 2.06 2.05 2.04 2.02 2.01 2.00 1.99 1.98 1.97 1.95 1.94 1.93 1.93 1.92 1.91 1.89 1.88 1.87 1.86 1.86 1.85 1.84 1.83 1.81 1.80 1.80 1.80 1.80 1.80 18 18 18 17 16 16 16 15 15 14 14 13 13 12 12 12 11 10 10 10 9 9 8 8 8 7 7 7 6 6 5 0.41 0.41 0.42 0.42 0.42 0.42 0.42 0.42 0.42 0.42 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.43 0.44 0.44 0.44 0.44 0.44 0.44 0.44 0.44 0.45 –155 –155 –156 –156 –156 –156 –156 –156 –157 –157 –157 –157 –158 –158 –158 –158 –158 –159 –159 –159 –159 –159 –159 –160 –160 –160 –161 –161 –161 –161 –161 MAG ANG (DEG) MAG ANG (DEG) 1.56 1.53 1.51 1.51 1.52 1.51 1.50 1.48 1.46 1.46 1.46 1.46 1.45 1.43 1.41 1.41 1.41 1.41 1.40 1.38 1.37 1.36 1.37 1.37 1.35 1.34 1.32 1.32 1.32 1.33 1.34 9 9 9 8 8 7 6 6 6 5 5 4 3 3 3 2 2 1 0 0 0 0 –1 –2 –2 –3 –3 –3 –3 –4 –5 0.53 0.53 0.53 0.53 0.53 0.53 0.53 0.54 0.54 0.54 0.54 0.54 0.55 0.55 0.55 0.55 0.55 0.55 0.55 0.55 0.55 0.56 0.56 0.56 0.56 0.56 0.56 0.56 0.56 0.57 0.57 –132 –132 –133 –133 –133 –134 –134 –134 –135 –135 –135 –135 –136 –136 –137 –137 –137 –138 –138 –138 –139 –139 –139 –140 –140 –140 –141 –141 –141 –142 –142 NEL2001 Class AB VCC = 24 V, Icq = 0.02 A FREQUENCY GHz MAG 1.70 1.71 1.72 1.73 1.74 1.75 1.76 1.77 1.78 1.79 1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 1.89 1.90 1.91 1.92 1.93 1.94 1.95 1.96 1.97 1.98 1.99 2.00 0.78 0.78 0.78 0.78 0.77 0.77 0.77 0.77 0.77 0.77 0.77 0.78 0.78 0.78 0.77 0.77 0.78 0.78 0.78 0.78 0.78 0.78 0.78 0.78 0.78 0.78 0.78 0.78 0.78 0.78 0.78 S11 ANG (DEG) 131 130 130 130 129 129 128 128 128 127 127 127 126 126 125 125 124 124 123 123 122 122 121 121 121 120 120 120 119 119 118 MAG 0.07 0.06 0.06 0.07 0.07 0.07 0.07 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 S12 ANG (DEG) –11 –11 –11 –10 –11 –11 –11 –11 –11 –11 –11 –13 –14 –14 –13 –13 –12 –12 –12 –12 –12 –12 –13 –13 –13 –13 –12 –12 –12 –12 –12 S21 S22 5 NEL200101-24 1.8 1.6 1 .4 1.2 0.9 0.8 0.7 0.2 1 2.0 0.6 0.5 4 0. ER EAC T + ANCE JX C Zo OM PO N 2 3 4 1.0 NEL200101-24 Zin/Zout Zin T EN 0.4 0 3. 0.6 0.3 POS ITIV 0.8 4.0 1.0 5.0 0 1. 1: 1.8 GHz 2: 1.9 3: 1.97 4: 2.0 0. 8 0.6 10 0.2 0.1 0.4 20 50 10 20 0.4 0.1 0.6 8 ON MP 1. ENT 0 0. CO 0.8 0.6 Zout 0.4 3 1.8 2.0 4 1.6 1.4 1.2 1.0 0.9 0.8 0.7 0.6 0.2 NE GA 0.5 0 2 3. CE AN CT JX A E – E R Zo TIV 1.0 4 0. 1 4.0 0.3 5.0 0.2 ZO = 50 ohm f [GHz] Zin [ohm] Zout [ohm] 1.80 8.7 + j38 2.2 – j19 1.90 6.3 + j36 4.1 – j24 1.97 5.4 + j33 6.4 – j30 2.00 4.7 + j30 10 – j37 Zout Zin 6 50 20 10 5.0 4.0 3.0 1.8 2.0 1.6 1.4 1.2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 0.1 0.2 RESISTANCE COMPONENT R 0.2 Zo 50 NEL200101-24 Circuit Drawing 40 mm , , , ,,,,,,,, ,,,,,,,, , ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,, , , , , , ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, , ,,, , , , 40 mm Thru hole 1 mmφ × 4 1 6 6 8 2.5 8 1 1 22 15 1 16 22 0.5 50 mm 17 2.3 1 2 7 3 3.15 2.3 6 10 6 1 4.15 3.3 7 1 2 10 20 6 25 3 8 1 3 1 input output SUBSTRATE (TEFLON) DICLAD 522T® THICKNESS = 0.79 mm DOUBLE SIDE 35 µ m Cu ε r = 2.6 7 NEL200101-24 Components Layout C4 VBB D1 R1 L1 C2 VCC C3 R2 RF input C5 C1 input output R1: 5.1 Ω R2: 30 Ω L1: 5 mmφ 10T Coil D1: 1S2075 C1, C2, C3, C5: MURATA, 47 pF C4: 22 µF (50 V) Electrolytic Capacitor 8 NEL200101-24 APPLICATION = Amplifier Diagrams = 46 mW 30 W NEL2001 NEL2012 NEL2035 NEL2035 × 2 95 mW NEL2001 50 W NEL2012 NEL2035 × 4 40 mW 100 W NEL2004 NEL2012 NEL2035 9 NEL200101-24 [MEMO] 10 NEL200101-24 [MEMO] 11 NEL200101-24 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5