PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES2427P-60 60 W S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES2427P-60 is a 60 W push-pull type GaAs MES FET designed for high power transmitter applications for MMDS, WLL repeater and base station systems. It is capable of delivering 60 W of output power (CW) with high linear gain, high efficiency and excellent distortion. Its primary band is 2.4 to 2.7 GHz. The device employs 0.9 µm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal characteristics, and reliability. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures. FEATURES • Push-pull type N-channel GaAs MES FET • VDS = 10.0 V operation • High output power: PO (1 dB) = 60 W TYP. • High linear gain: GL = 12.0 dB TYP. • High power added efficiency: ηadd = 35 % TYP. @ VDS = 10.0 V, IDset = 12.0 A (total), f = 2.50, 2.70 GHz ORDERING INFORMATION (PLAN) Part Number NES2427P-60 Package T-92 Supplying Form ESD protective envelope Remark To order evaluation samples, consult your NEC sales representative. Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P14997EJ1V0DS00 (1st edition) Date Published July 2000 NS CP(K) Printed in Japan © 2000 NES2427P-60 ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified, T A = +25 °C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Symbol Ratings Unit Drain to Source Voltage VDS 15 V Gate to Source Voltage VGSO −7 V Gate to Drain Voltage VGDO −18 V Drain Current ID 54 A Gate Current IG 360 mA 200 W Total Power Dissipation Ptot Note Channel Temperature Tch 175 °C Storage Temperature Tstg −65 to +175 °C Note TC = +25 °C RECOMMENDED OPERATING CONDITIONS Parameter MIN. TYP. MAX. Unit VDS − − 10.0 V Gcomp − − 3.0 dB Channel Temperature Tch − − +150 °C Set Drain Current IDset Drain to Source Voltage Gain Compression Symbol Test Conditions − 12.0 12.0 A − 2.5 2.5 Ω − − 60 °C MIN. TYP. MAX. Unit − 36.0 − A −4.0 −2.1 − V − 0.65 0.75 °C/W 47.0 48.0 − dBm − 16.0 − A − 35 − % 10.0 12.0 − dB − −48 − dBc VDS = 10.0 V, RF OFF Gate Resistance Rg Note 1 Case Temperature TC Note 2 Notes 1. Rg is the series resistance between the gate supply and the FET gate. 2. TC MAX. = 60 °C is at the condition of IDset = 12.0 A. TC (°C) ≤ Tch MAX. (150 °C) − VDS (V) × IDset (A) × Rth MAX. (°C/W) ELECTRICAL CHARACTERISTICS (TA = +25 °C) Parameter Symbol Test Conditions Saturated Drain Current IDSS VDS = 2.5 V, VGS = 0 V Pinch-off Voltage Vp VDS = 2.5 V, ID = 168 mA Thermal Resistance Rth Channel to Case Gain 1 dB Compression Output Power Drain Current Power Added Efficiency Linear Gain 3rd Order Intermodulation Distortion PO (1 dB) Rg = 2.5 Ω, ID ηadd GL f = 2.50, 2.70 GHz, VDS = 10.0 V, IDset = 12.0 A Total (RF OFF) Note 1 Note 2 IM3 ∆f = 1 MHz, Pout = 39 dBm (2 tones total) Notes 1. IDset = 6.0 A each drain 2. Pin = 32 dBm 2 Preliminary Data Sheet P14997EJ1V0DS00 NES2427P-60 TYPICAL CHARACTERISTICS (TA = +25 °C) f = 2.50 GHz f = 2.70 GHz 20 30 10 20 25 30 35 40 45 40 η add 40 30 35 20 30 10 25 10 0 45 15 20 25 30 35 40 0 45 Input Power Pin (dBm) Input Power Pin (dBm) DRAIN CURRENT, GATE CURRENT vs. INPUT POWER DRAIN CURRENT, GATE CURRENT vs. INPUT POWER 16 120 20 100 18 80 ID 14 60 12 40 10 20 IG 0 8 6 10 0 –10 15 20 25 30 35 40 120 VDS = 10.0 V, f = 2.70 GHz (1 tone) IDset = 12.0 A (RF OFF), Rg = 2.5 Ω 16 100 80 ID 14 60 12 40 10 20 IG 0 8 –20 45 6 10 15 20 25 30 35 40 Input Power Pin (dBm) Input Power Pin (dBm) 3RD ORDER INTERMODULATION DISTORTION, DRAIN CURRENT vs. 2 TONES OUTPUT POWER 3RD ORDER INTERMODULATION DISTORTION, DRAIN CURRENT vs. 2 TONES OUTPUT POWER 16 VDS = 10.0 V, f = 2.50 GHz (2 tones) IDset = 12.0 A (RF OFF), Rg = 2.5 Ω 14 ID –20 12 –30 10 8 –40 IM3 –50 6 –60 4 –70 20 Drain Current ID (A) VDS = 10.0 V, f = 2.50 GHz (1 tone) IDset = 12.0 A (RF OFF), Rg = 2.5 Ω 25 30 35 40 45 2 50 3rd Order Intermodulation Distortion IM3 (dBc) 18 15 50 Pout 0 –10 Power Added Efficiency ηadd (%) 35 50 60 VDS = 10.0 V, f = 2.70 GHz (1 tone) IDset = 12.0 A (RF OFF), Rg = 2.5 Ω –20 45 16 VDS = 10.0 V, f = 2.70 GHz (2 tones) IDset = 12.0 A (RF OFF), Rg = 2.5 Ω 14 ID –20 12 –30 10 Drain Current ID (A) 30 Output Power Pout (dBm) 40 20 3rd Order Intermodulation Distortion IM3 (dBc) 40 η add Power Added Efficiency ηadd (%) 45 25 10 Drain Current ID (A) 50 Pout Gate Current IG (mA) 50 55 60 VDS = 10.0 V, f = 2.50 GHz (1 tone) IDset = 12.0 A (RF OFF), Rg = 2.5 Ω Drain Current ID (A) Output Power Pout (dBm) 55 OUTPUT POWER, POWER ADDED EFFICIENCY vs. INPUT POWER Gate Current IG (mA) OUTPUT POWER, POWER ADDED EFFICIENCY vs. INPUT POWER 8 –40 IM3 –50 6 –60 4 –70 20 25 2 tones Output Power Pout (dBm) 30 35 40 45 2 50 2 tones Output Power Pout (dBm) Remark The graphs indicate nominal characteristics. Preliminary Data Sheet P14997EJ1V0DS00 3 NES2427P-60 PACKAGE DIMENSIONS T-92 (UNIT: mm) 35.2±0.3 9.7±0.3 R1.2±0.3 S S D1 8.0 G2 D2 PIN CONNECTIONS G1, G2 : Gate D1, D2 : Drain S : Source 4 Preliminary Data Sheet P14997EJ1V0DS00 1.8±0.2 2.4±0.2 4.0±0.3 31.6±0.3 17.4±0.3 G1 4.75 MAX. 2.4±0.3 45˚ NES2427P-60 RECOMMENDED MOUNTING CONDITIONS FOR CORRECT USE (1) Fix to heat sink or mount surface completely with screws at the four holes of the flange. (2) The recommended torque strength of the screws is 30 N typical using M2.3 type screws. (3) The recommended flatness of the mount surface is less than ±10 µm (roughness of surface is ∇∇∇). RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Partial Heating Soldering Conditions Recommended Condition Symbol Pin temperature: 260 °C or below, Time: 5 seconds or less (per pin row) − For details of recommended soldering conditions, please contact your local NEC sales office. Preliminary Data Sheet P14997EJ1V0DS00 5 NES2427P-60 [MEMO] 6 Preliminary Data Sheet P14997EJ1V0DS00 NES2427P-60 [MEMO] Preliminary Data Sheet P14997EJ1V0DS00 7 NES2427P-60 CAUTION The great care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. • The information in this document is current as of July, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. 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