DATA SHEET SILICON POWER MOS FET NE552R679A 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS (Family Radio Service). Dies are manufactured using our NEWMOS2 technology (our WSi gate lateral-diffusion MOS FET) and housed in a surface mount package. This device can deliver 28.0 dBm output power with 60% power added efficiency at 460 MHz under the 3.0 V supply voltage. FEATURES • High output power : Pout = 28.0 dBm TYP. (VDS = 3.0 V, IDset = 300 mA, f = 460 MHz, Pin = 15 dBm) • High power added efficiency : ηadd = 60% TYP. (VDS = 3.0 V, IDset = 300 mA, f = 460 MHz, Pin = 15 dBm) • High linear gain : GL = 20 dB TYP. (VDS = 3.0 V, IDset = 300 mA, f = 460 MHz, Pin = 5 dBm) • Surface mount package : 5.7 × 5.7 × 1.1 mm MAX. • Single supply : VDS = 2.8 to 6.0 V APPLICATIONS • Family Radio Service : 3.0 V Handsets ORDERING INFORMATION Part Number NE552R679A-T1 Package Marking 79A AU NE552R679A-T1A Supplying Form • 12 mm wide embossed taping • Gate pin face the perforation side of the tape • Qty 1 kpcs/reel • 12 mm wide embossed taping • Gate pin face the perforation side of the tape • Qty 5 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE552R679A Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10125EJ01V1DS (1st edition) Date Published April 2002 CP(K) Printed in Japan NEC Compound Semiconductor Devices 2001, 2002 NE552R679A ABSOLUTE MAXIMUM RATINGS (TA = +25°°C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 8.0 V Gate to Source Voltage VGS 5.0 V Drain Current IDS 350 mA 600 mA Drain Current (Pulse Test) IDS Note Total Power Dissipation Pt 10 W Channel Temperature Tch 125 °C Storage Temperature Tstg −55 to +125 °C Note Duty Cycle 50%, Ton ≤ 1 s RECOMMENDED OPERATING CONDITIONS Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Drain to Source Voltage VDS 2.8 3.0 6.0 V Gate to Source Voltage VGS 0 2.0 3.0 V Drain Current IDS − 300 500 mA Input Power Pin 14 15 20 dBm MIN. TYP. MAX. Unit f = 460 MHz, VDS = 3.0 V ELECTRICAL CHARACTERISTICS (TA = +25°°C, Unless otherwise specified, using NEC standard test fixture) Parameter Symbol Test Conditions Gate to Source Leak Current IGSO VGS = 5.0 V − − 100 nA Saturated Drain Current (Zero Gate Voltage Drain Current) IDSS VDS = 8.0 V − − 100 nA Gate Threshold Voltage Vth VDS = 3.5 V, IDS = 1 mA 1.0 1.4 1.9 V Thermal Resistance Rth Channel to Case − − 10 °C/W Transconductance gm VDS = 3.0 V, IDS = 300 mA − 0.6 − S IDSS = 10 µA 15 18 − V 26.0 28.0 − dBm Pin = 15 dBm, − 320 − mA IDset = 300 mA (RF OFF) , Note1 55 60 − % − 20 − dB Drain to Source Breakdown Voltage BVDSS Output Power Pout Drain Current ID Power Added Efficiency Linear Gain Note2 ηadd f = 460 MHz, VDS = 3.0 V, GL Note 1. DC performance is 100% testing. RF performance is testing several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples. 2. Pin = 5 dBm 2 Data Sheet PU10125EJ01V1DS NE552R679A 100 750 75 η add 15 500 50 IDS 10 250 0 5 10 15 0 20 25 0 −30 IM3 −40 IM5 −50 −60 −70 5 10 15 20 25 30 Input Power Pin (dBm) 2Tone to Output Power Pout (dBm) OUTPUT POWER, DRAIN CURRENT η d, η add vs. INPUT POWER OUTPUT POWER, DRAIN CURRENT η d, η add vs. INPUT POWER Pout 1 000 20 ηd 100 750 75 500 50 η add 15 IDS 10 5 −5 250 0 5 10 15 0 20 30 25 0 Output Power Pout (dBm) 25 1 250 f = 460 MHz VDS = 3.0 V IDQ = 100 mA Drain Efficiency η d (%) Power Added Efficiency η add (%) 30 25 1 250 f = 460 MHz VDS = 3.5 V IDQ = 100 mA 1 000 100 750 75 500 50 250 25 Pout 20 ηd η add 15 IDS 10 5 −5 0 5 10 15 0 20 0 Drain Efficiency η d (%) Power Added Efficiency η add (%) ηd 20 1 000 f = 460 MHz ∆f = 1 MHz VDS = 3.0 V IDQ = 300 mA −20 Drain Current IDS (mA) 25 Pout IMD vs. 2TONE TO OUTPUT POWER −10 Drain Efficiency η d (%) Power Added Efficiency η add (%) f = 460 MHz VDS = 3.0 V IDQ = 300 mA 5 −5 Output Power Pout (dBm) 1 250 Drain Current IDS (mA) Output Power Pout (dBm) 30 IMD (dBc) OUTPUT POWER, DRAIN CURRENT η d, η add vs. INPUT POWER Drain Current IDS (mA) TYPICAL CHARACTERISTICS (TA = +25°°C) Input Power Pin (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10125EJ01V1DS 3 NE552R679A S-PARAMETERS Test Conditions: VDS = 3.0 V, IDset = 300 mA, TA = +25 °C) S11 MAG Note MSG Note dB dB Frequency GHz Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. Ang. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 0.655 0.651 0.666 0.660 0.656 0.655 0.654 0.658 0.656 0.658 0.663 0.668 0.668 0.668 0.672 0.674 0.673 0.675 0.677 0.677 0.677 0.677 0.681 0.677 0.675 0.674 0.673 0.670 0.667 0.665 0.662 0.648 0.656 0.652 0.651 0.648 0.644 0.641 0.636 0.633 −120.2 −142.0 −156.1 −161.4 −165.8 −168.4 −170.2 −171.8 −172.8 −173.8 −175.0 −175.8 −176.8 −177.6 −178.5 −179.2 −180.0 179.2 178.5 177.8 177.0 176.2 175.4 174.7 174.6 173.8 173.2 172.3 171.4 170.7 169.9 168.9 168.6 167.6 167.1 166.2 165.4 164.7 163.8 163.0 21.2 17.2 13.8 11.5 9.4 7.8 6.5 5.2 4.1 3.1 2.1 1.1 0.4 −0.4 −1.1 −1.8 −2.5 −3.2 −3.8 −4.4 −4.9 −5.4 −6.0 −6.5 −6.9 −7.4 −7.9 −8.3 −8.7 −9.1 −9.5 −9.8 −10.4 −10.6 −11.0 −11.3 −11.6 −12.0 −12.3 −12.6 11.42 7.25 4.89 3.74 2.96 2.46 2.10 1.81 1.61 1.43 1.27 1.14 1.04 0.96 0.88 0.81 0.75 0.69 0.65 0.61 0.57 0.54 0.50 0.48 0.45 0.43 0.40 0.39 0.37 0.35 0.33 0.32 0.30 0.29 0.28 0.27 0.26 0.25 0.24 0.23 115.3 99.3 88.2 81.6 77.2 72.6 68.4 64.4 60.6 56.6 53.3 49.9 46.6 43.7 40.6 37.5 34.6 31.7 28.9 26.4 24.0 21.2 19.2 16.6 13.9 11.7 9.5 7.8 5.7 3.5 1.4 −0.1 −1.4 −2.8 −4.5 −6.6 −7.9 −10.1 −11.5 −12.5 −31.6 −29.0 −29.3 −29.2 −29.2 −29.3 −29.5 −29.6 −29.7 −29.8 −30.0 −30.2 −30.3 −30.6 −30.7 −31.0 −31.1 −31.3 −31.6 −31.7 −31.9 −32.2 −32.2 −32.5 −32.7 −32.8 −33.0 −33.2 −33.4 −33.4 −33.7 −34.1 −34.6 −35.3 −35.6 −35.6 −35.7 −36.0 −36.1 −36.2 0.026 0.035 0.034 0.034 0.035 0.034 0.033 0.033 0.033 0.032 0.031 0.031 0.030 0.030 0.029 0.028 0.028 0.027 0.026 0.026 0.025 0.025 0.025 0.024 0.023 0.023 0.022 0.022 0.021 0.021 0.021 0.020 0.019 0.017 0.017 0.017 0.016 0.016 0.016 0.015 28.7 10.3 −0.1 −5.6 −11.8 −15.9 −20.1 −24.2 −27.6 −31.5 −35.3 −39.1 −42.1 −45.4 −49.0 −51.8 −55.3 −58.6 −61.5 −64.6 −68.3 −71.4 −75.1 −78.2 −82.0 −85.1 −89.7 −92.3 −96.7 −101.5 −106.4 −111.8 −117.6 −122.0 −123.8 −126.7 −130.5 −135.9 −140.3 −144.7 0.633 0.757 0.796 0.808 0.815 0.819 0.823 0.828 0.831 0.835 0.840 0.843 0.846 0.851 0.853 0.857 0.859 0.862 0.864 0.867 0.869 0.869 0.863 0.873 0.874 0.874 0.873 0.875 0.874 0.873 0.873 0.879 0.872 0.871 0.871 0.870 0.869 0.868 0.867 0.865 −167.5 −167.9 −173.0 −175.0 −175.9 −176.8 −177.4 −178.0 −179.4 −179.9 179.6 179.2 178.7 178.2 177.7 177.4 176.6 176.1 175.5 174.9 174.2 173.6 172.6 172.4 171.7 170.9 170.1 169.4 168.7 167.9 167.2 166.8 165.7 164.9 164.1 163.1 162.3 161.4 160.4 159.4 Note When K ≥ 1, the MAG (Maximum Available Gain) is used. When K < 1, the MSG (Maximum Stable Gain) is used. S22 S21 MAG = S12 MSG = S21 S12 26.4 23.1 21.5 20.4 19.3 18.6 18.0 16.2 14.2 12.8 11.7 10.7 9.8 9.1 8.2 7.6 6.8 6.1 5.5 5.0 4.4 3.8 3.0 2.8 2.2 1.7 1.2 0.8 0.3 −0.2 −0.8 −1.0 −1.7 −2.1 −2.4 −2.8 −3.2 −3.7 −4.0 −4.4 K − 0.59 0.36 0.40 0.50 0.62 0.76 0.91 1.04 1.20 1.37 1.54 1.75 1.93 2.14 2.38 2.61 2.87 3.20 3.51 3.76 4.12 4.57 5.14 5.35 5.82 6.29 6.90 7.45 8.10 8.64 9.63 10.28 12.13 13.80 14.87 15.51 16.66 18.41 19.61 21.02 (K – √ (K – 1) ) 2 1+∆ −S11 2 −S22 2 ,K= 2 , ∆ = S11 ⋅ S22 − S21 ⋅ S12 LARGE SIGNAL IMPEDANCE (VDS = 3.0 V, IDS = 300 mA, f = 460 MHz) f (MHz) Zin (Ω) ZOL (Ω) Note 460 7.47 +j18.24 4.82 +j5.04 Note ZOL is the conjugate of optimum load impedance at given voltage, idling current, input power and frequency. 4 Data Sheet PU10125EJ01V1DS NE552R679A EVALUATION BOARD for 460 MHz Unit : mm VDS VGS C9 C8 C7 C7 C8 C9 C4 L1 R1 30.0 C6 C6 C3 C5 C2 C1 48.0 Symbol Value C1 9.1 pF C2 12 pF C3 20 pF C4 3.3 pF C5 13 pF C6 22 pF C7 1 000 pF C8 0.33 µF C9 3.3 µF - 16V R1 1 000 Ω L1 22 nH Circuit Board t = 0.4 mm, ε r = 4.5 Data Sheet PU10125EJ01V1DS Comment R4775 5 NE552R679A PACKAGE DIMENSIONS 79A (UNIT: mm) 1.0 MAX. 0.8±0.15 A Drain Gate Drain 0.4±0.15 0.8 MAX. 5.7 MAX. 0.9±0.2 0.2±0.1 3.6±0.2 79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm) 4.0 1.7 Source Stop up the hole with a rosin or something to avoid solder flow. Drain 1.2 0.5 1.0 5.9 Gate Through Hole: φ 0.2 × 33 0.5 0.5 6.1 6 Data Sheet PU10125EJ01V1DS 1.2 MAX. Source 4.4 MAX. Source 0X001 1.5±0.2 U Gate 0.6±0.15 5.7 MAX. (Bottom View) 4.2 MAX. NE552R679A RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below IR260 VPS Peak temperature (package surface temperature) Time at temperature of 200°C or higher Preheating time at 120 to 150°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 215°C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times : 0.2%(Wt.) or below VP215 Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Preheating temperature (package surface temperature) Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 120°C or below : 1 time : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (pin temperature) Soldering time (per pin of device) Maximum chlorine content of rosin flux (% mass) : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350-P3 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PU10125EJ01V1DS 7 NE552R679A • The information in this document is current as of March, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. 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M8E 00. 4 - 0110 8 Data Sheet PU10125EJ01V1DS NE552R679A Business issue NEC Compound Semiconductor Devices, Ltd. 5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: [email protected] NEC Compound Semiconductor Devices Hong Kong Limited Hong Kong Head Office FAX: +852-3107-7309 TEL: +852-3107-7303 Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Korea Branch Office FAX: +82-2-528-0302 TEL: +82-2-528-0301 NEC Electron Devices European Operations http://www.nec.de/ TEL: +49-211-6503-101 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 Technical issue NEC Compound Semiconductor Devices, Ltd. http://www.csd-nec.com/ Sales Engineering Group, Sales Division E-mail: [email protected] FAX: +81-44-435-1918 0110