HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE DARLINGTON TYPE 6 PIN OPTOCOUPLER PS2633 PS2633L PS2634 PS2634L FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. MIN • ULTRA HIGH CURRENT TRANSFER RATIO CTR: 1000% MIN PS2633, PS2633L, PS2634, and PS2634L are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor. PS2633 and PS2634 are in a plastic DIP (Dual In-Line Package). Ps2633L and PS2634L are lead bending type (Gull-wing) for surface mount. PS2633 and PS2633L have a base pin and PS2634 and PS2634L have no base pin. • HIGH SPEED SWITCHING tr,tf = 100 µs TYP APPLICATIONS • HIGH COLLECTOR TO EMITTER VOLTAGE VCEO: 300 V MIN • TELEPHONE/TELEGRAPH LINE RECEIVER • POWER SUPPLY ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER Diode SYMBOLS PARAMETERS Transistor UNITS MIN TYP MAX 1.4 Forward Voltage, IF = 10 mA IR Reverse Current, VR = 5 V C Junction Capacitance, V = 0, f = 1.0 MHz pF Collector to Emitter Dark Current VCE = 300 V, IF = 0 nA BVCEO Collector to Emitter Breakdown Voltage IC = 1 mA, IB = 0 V 300 BVEBO Emitter to Base Breakdown Voltage1 IE = 100 µA, IC = 0 V 6 Current Transfer Ratio, IF =1 mA, VCE = 2 V % 1000 Collector Saturation Voltage, IF =1 mA, IC = 2 mA V R1-2 Isolation Resistance, Vin-out = 1.0 k VDC Ω C1-2 Isolation Capacitance, V = 0, f = 1.0 MHz pF 0.6 tr Rise Time2, VCC = 5 V, IC = 10 mA µs 100 tf Fall Time2, VCC = 5 V, IC = 10 mA µs 100 CTR VCE(sat) 5 4 µA 5 30 400 6 5 4 1.0 10 VCC 1 5 2 50 Ω 4 PS2633 3 1 2 PS2634 3 VCC PULSE INPUT = 100 µs ( PW Duty Cycle = 1/10 ) IF 2 15000 11 PULSE INPUT = 100 µs ( PW Duty Cycle = 1/10 ) 1 4000 2. Test Circuit for Switching Time 1. Only PS2633, PS2633L 6 V 1.15 VF ICEO Coupled PS2633, PS2633L, PS2634, PS2634L 1 5 2 50 Ω 4 IF Vout RL = 100 Ω Vout RL = 100 Ω 6 PS2633 PS2634 California Eastern Laboratories PS2633, PS2633L, PS2634, PS2634L ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS Diode VR IF PD IF (Peak) Transistor VCEO VEBO IC PC Coupled BV TSTG TOP PARAMETERS UNITS RATINGS Reverse Voltage Forward Current (DC) Power Dissipation Peak Forward Current PW = 100 µs, Duty Cycle 1% V mA mW A 6 80 150 1 Collector to Emitter Voltage Emitter to Base Voltage2 Collector Current Power Dissipation V V mA mW 300 6 150 300 Vr.m.s. °C °C 5000 -55 to +150 -55 to +100 Isolation Voltage3 Storage Temperature Operating Temperature Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Only PS2633, PS2633L 3. AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input (Pin No. 1, 2, 3 Common) and output (Pin No. 4, 5, 6 Common). OUTLINE DIMENSIONS (Units in mm) PS2633, PS2634 PS2633L, PS2634L 10.16 MAX 6 10.16 MAX 6 4 4 φ1 3 1 7.62 6.5 3 7.62 3.8 MAX 1.34 2.54 MAX 2.54 0.50 ± 0.10 6.5 0.05 to 0.2 1 0.65 2.8 MIN 4.55 MAX 3.8 MAX φ1 2.54 2.54 MAX 0.9± 0.25 9.60 ± 0.4 0 to 15˚ 1.34 ± 0.10 0.25 M 0.25 M PIN CONNECTIONS (Top View) PS2633, PS2633L 6 5 4 6 1. 2. 3. 4. 5. 6. 1 2 PS2634, PS2634L 3 5 4 Anode Cathode NC Emitter Collector Base 1. 2. 3. 4. 5. 6. 1 2 3 Anode Cathode NC Emitter Collector NC PS2633, PS2633L, PS2634, PS2634L TYPICAL PERFORMANCE CURVES (TA = 25 °C) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 400 Transistor Power Dissipation, PC (mW) Diode Power Dissipation, PD (mW) 200 150 100 50 0 25 50 75 100 200 100 0 25 50 75 Ambient Temperature, TA (°C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 160 TA = 100 ˚C 75 ˚C 50 ˚C Collector Current, IC (mA) 25 ˚C 0 ˚C -25 ˚C -55 ˚C 10 1 0.1 4.5 mA 4.0 mA mA 4.0 3.5 mA 5.0 mA 140 120 mA 3.0 mA 2.5 A 2.0 m 100 80 A 1.5 m 60 1.0 mA 40 20 0.01 0.6 0.8 1.0 1.2 1.4 IF = 0.5 mA 0 1.6 1 2 3 4 5 6 7 8 Forward Voltage, VF (V) Collector to Emitter Voltage, VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 10 µ 300 VCE = 300 V 50 5.0 mA 2.0 mA 2.0 mA 10 IF = 0.5 mA 100 1µ Collector Current, IC (mA) Collector to Emitter Dark Current, ICEO (nA) 100 Ambient Temperature, TA (°C) 100 Forward Current, IF (mA) 300 100 n 10 n 1n 5 1 0.5 100 p -50 0.1 -25 0 25 50 75 Ambient Temperature, TA (°C) 100 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector Saturation Voltage, VCE(sat) (V) PS2633, PS2633L, PS2634, PS2634L TYPICAL PERFORMANCE CURVES (TA = 25 °C) CURRENT TRANSFER RATIO (CTR) vs. FORWARD CURRENT NORMALIZED OUTPUT CURRENT vs. AMBIENT TEMPERATURE 5000 1.2 Current Transfer Ratio, CTR (%) ∆CTR, Normalized Output Current VCE = 2 V 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25 ˚C IF = 1 mA, VCE = 2 V 0.2 0 -50 -25 0 25 75 50 Sample A 4000 Sample B 3000 2000 1000 0 0.1 100 0.5 1 5 10 Ambient Temperature, TA (°C) Forward Current, IF (mA) SWITCHING TIME vs. LOAD RESISTANCE FREQUENCY RESPONSE 20 300 VCC = 10 V, IC = 10 mA Pulse Width = 5 ms Duty Cycle = 1/2 0 Voltage Gain, AV (dB) Switching Time, t (µs) 100 tr 50 td tf 10 5 1 20 50 500 100 1k 2k 100 Ω -10 1 kΩ -15 -20 -25 ts 10 Ω -5 -30 0.01 VCE = 4 V, IC = 10 mA VIN = 0.1 VP-P 1 kΩ 1 µF VIN 47 Ω RL VOUT 0.1 1 10 100 Frequency, f (kHz) Load Resistance, RL (Ω) CTR DEGRADATION 1.2 IF = 1 mA ∆CTR, Normalized 1.0 TA = 25 ˚C 0.8 TA = 60 ˚C 0.6 0.4 0.2 0 10 102 103 104 105 106 Time (HR) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -3/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE