DATA SHEET PHOTOCOUPLER PS2702-1,PS2702-2,PS2702-4 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR −NEPOC SOP MULTI PHOTOCOUPLER SERIES TM Series− DESCRIPTION The PS2702-1, PS2702-2, PS2702-4, are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington-connected phototransistor. Each is mounted in a plastic SOP (Small Out-line Package) for high density applications. This package has shield effect to cut off ambient light. FEATURES • High current transfer ratio (CTR = 2 000 % TYP.) • High isolation voltage (BV = 3 750 Vr.m.s.) • Small and thin (SOP) package • High-speed switching (tr, tf = 200 µs TYP.) • Ordering number of taping product (1-ch only): PS2702-1-E3, E4, F3, F4 • UL approved: File No. E72422 (S) • VDE0884 approved (Option) APPLICATIONS • Hybrid IC • Telephone/FAX • FA/OA equipment • Programmable logic controllers ORDERING INFORMATION Part Number Package Safety Standard Approval PS2702-1 4-pin SOP Standard specification products PS2702-2 8-pin SOP • UL approved PS2702-4 16-pin SOP PS2702-1-V 4-pin SOP PS2702-2-V 8-pin SOP PS2702-4-V 16-pin SOP VDE0884 specification products (Option) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P11307EJ6V0DS00 (6th edition) Date Published February 1999 NS CP(K) Printed in Japan The mark • shows major revised points. © 1988, 1999 PS2702-1,PS2702-2,PS2702-4 PACKAGE DIMENSIONS (in millimeters) PS2702-1 4.5 MAX. TOP VIEW 4 1 3 1. Anode 2. Cathode 3. Emitter 4. Collector 2 1.3 0.15 +0.10 –0.05 2.0 0.1±0.1 2.3 MAX. 7.0±0.3 4.4 2.54 0.4 +0.10 –0.05 1.2 MAX. 0.5±0.3 0.25 M PS2702-2 9.3 MAX. TOP VIEW 8 7 6 5 1. 3. 2. 4. 5. 7. 6. 8. 1 2 3 4 7.0±0.3 4.4 1.3 0.15 +0.10 –0.05 2.0 0.1±0.1 2.3 MAX. Anode Cathode Emitter Collector 2.54 0.4 +0.10 –0.05 1.2 MAX. 0.5±0.3 0.25 M PS2702-4 19.46 MAX. TOP VIEW 16 15 1 2 14 13 12 3 4 5 1. 3. 5. 7. 2. 4. 6. 8. 9. 11. 13. 15. 10. 12. 14. 16. 0.15 +0.10 –0.05 2.0 0.1±0.1 2.3 MAX. 2 0.25 M 2.54 1.2 MAX. Data Sheet P11307EJ6V0DS00 0.5±0.3 10 9 6 7 8 Anode Cathode Emitter Collector 7.0±0.3 4.4 0.4 +0.10 –0.05 11 1.3 PS2702-1,PS2702-2,PS2702-4 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Ratings Parameter Diode Symbol Unit Forward Current (DC) IF 50 mA Reverse Voltage VR 6.0 V ∆PD/°C 0.8 mW/°C PD 80 mW/ch IFP 1 A Collector to Emitter Voltage VCEO 40 V Emitter to Collector Voltage VECO 6 V Power Dissipation Derating Power Dissipation Peak Forward Current Transistor PS2702-2, PS2702-4 PS2702-1 *1 Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage *2 IC 200 160 mA/ch ∆PC/°C 1.5 1.2 mW/°C PC 150 120 mW/ch BV 3 750 Vr.m.s. Operating Ambient Temperature TA –55 to +100 °C Storage Temperature Tstg –55 to +150 °C *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output Data Sheet P11307EJ6V0DS00 3 PS2702-1,PS2702-2,PS2702-4 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Symbol Conditions Forward Voltage VF IF = 5 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1 MHz MIN. TYP. MAX. Unit 1.1 1.4 V 5 µA 30 pF Transistor Collector to Emitter Current ICEO IF = 0 mA, VCE = 40 V Coupled Current Transfer Ratio *1 (IC/IF) CTR IF = 1 mA, VCE = 2 V Collector Saturation Voltage VCE (sat) IF = 1 mA, IC = 2 mA Isolation Resistance RI-O VI-O = 1 kVDC Isolation Capacitance CI-O V = 0 V, f = 1 MHz 0.4 pF *2 tr VCC = 5 V, IC = 2 mA, RL = 100 Ω 200 µs Rise Time Fall Time *2 tf (%) L : 700 to 3 400 (%) M: 200 to 1 000 (%) *2 Test circuit for switching time Pulse input VCC IF PW = 1 ms, Duty cycle = 1/10 Input monitor VOUT 50 Ω 4 200 2 000 RL = 100 Ω Data Sheet P11307EJ6V0DS00 nA % 1.0 V Ω 11 10 200 *1 CTR rank (only PS2702-1) K: 2 000 to 400 PS2702-1,PS2702-2,PS2702-4 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 100 75 50 25 25 0 50 75 100 200 150 PS2702-1 1.5 mW/˚C 100 PS2702-2, PS2702-4 1.2 mW/˚C 50 25 0 50 75 100 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 180 10 Collector Current IC (mA) Forward Current IF (mA) 160 TA = +100 ˚C +75 ˚C +50 ˚C 1 +25 ˚C 0 ˚C –25 ˚C –55 ˚C 0.1 140 120 IF = 5 mA 100 2 mA 80 60 A 1m 40 0.5 mA 20 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8 10 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 50 000 300 10 000 5 000 100 IF = 10 mA VCE = 40 V 24 V 10 V 5V 2V 1 000 500 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) 0.01 0.6 100 50 10 5 1 –60 –40 5 mA 1 mA 30 0.5 mA 10 0.2 mA 3 0.1 mA 1 0.3 –20 0 20 40 60 80 100 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Collector Saturation Voltage VCE (sat) (V) Ambient Temperature TA (˚C) Data Sheet P11307EJ6V0DS00 5 PS2702-1,PS2702-2,PS2702-4 CURRENT TRANSFER RATIO vs. FORWARD CURRENT ,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,, 1.2 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25 ˚C, IF = 1 mA, VCE = 2 V 0.2 0.0 –50 –25 0 25 50 75 3 000 Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 1 500 1 000 500 0 10 CURRENT TRANSFER RATIO vs. FORWARD CURRENT 10 000 Current Transfer Ratio CTR (%) 100 tf td 50 ts 10 5 100 500 8 000 7 000 6 000 5 000 4 000 3 000 2 000 1 000 0 5k 1k 5 000 1 000 500 0.5 1 5 10 Forward Current IF (mA) FREQUENCY RESPONSE 5 tf IF = 1 mA, VCC = 5 V, CTR = 2 200 % VCE = 2 V 9 000 SWITCHING TIME vs. LOAD RESISTANCE IF = 1 mA, VCE = 2 V 0 Normalized Gain GV Switching Time t ( µ s) 300 SWITCHING TIME vs. LOAD RESISTANCE Load Resistance RL (Ω) ts 100 50 tr 10 td 5 500 1 k 5 k 10 k –5 RL = 100 Ω –10 –15 50 k –20 0.1 0.5 1 5 10 Frequency f (kHz) Load Resistance RL (Ω) 6 100 Forward Current IF (µA) tr 1 50 100 50 Ambient Temperature TA (˚C) VCC = 5 V, IC = 2 mA, 500 CTR = 2 200 % Switching Time t ( µ s) 2 000 100 1 000 1 50 VCE = 2 V 2 500 Data Sheet P11307EJ6V0DS00 50 100 PS2702-1,PS2702-2,PS2702-4 LONG TERM CTR DEGRADATION CTR Degradation (Relative Value) 1.2 1.0 0.8 IF = 1 mA, TA = 25 ˚C IF = 1 mA, TA = 60 ˚C 0.6 0.4 0.2 0.0 1 102 103 104 105 106 Time (Hr) Remark The graphs indicate nominal characteristics. Data Sheet P11307EJ6V0DS00 7 PS2702-1,PS2702-2,PS2702-4 TAPING SPECIFICATIONS (in millimeters) 1.55±0.1 2.4±0.1 7.4±0.1 5.5±0.1 1.55±0.1 12.0±0.2 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 4.6±0.1 8.0±0.1 Tape Direction PS2702-1-E4 PS2702-1-F4 PS2702-1-E3 PS2702-1-F3 Outline and Dimensions (Reel) 6 6.0±1 Packing: PS2702-1-E3, E4 900 pcs/reel PS2702-1-F3, F4 3 500 pcs/reel 8 Data Sheet P11307EJ6V0DS00 φ 13.0±0.5 1.5±0.5 φ 66 2.0±0.5 0˚ 1.5±0.1 120 ˚ PS2702-1-E3, E4: φ 178 PS2702-1-F3, F4: φ 330 φ 21.0±0.8 1.5±0.1 12.4 +2.0 –0.0 18.4 MAX. PS2702-1,PS2702-2,PS2702-4 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature 235 °C (package surface temperature) • Time of temperature higher than 210 °C 30 seconds or less • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 120 to 160 ˚C 60 to 90 s (preheating) Time (s) Peak temperature 235 ˚C or below (2) Dip soldering • Temperature 260 °C or below (molten solder temperature) • Time 10 seconds or less • Number of times One • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) (3) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. Data Sheet P11307EJ6V0DS00 9 PS2702-1,PS2702-2,PS2702-4 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884) Parameter Symbol Application classification (DIN VDE 0109) for rated line voltages ≤ 300 Vr.m.s. for rated line voltages ≤ 600 Vr.m.s. Speck Unit IV III Climatic test class (DIN IEC 68 Teil 1/09.80) 55/100/21 Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) Upr = 1.2 × UIORM, Pd < 5 pC UIORM Upr 710 850 Vpeak Vpeak Test voltage (partial discharge test, procedure b for random test) Upr = 1.6 × UIORM, Pd < 5 pC Upr 1 140 Vpeak Highest permissible overvoltage UTR 6 000 Vpeak Degree of pollution (DIN VDE 0109) 2 Clearance distance >5 mm Creepage distance >5 mm Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI Material group (DIN VDE 0109) 175 III a Storage temperature range Tstg −55 to +150 °C Operating temperature range TA –55 to +100 °C Ris MIN. Ris MIN. 10 11 10 Ω Ω Tsi Isi Psi 150 200 300 mA mW Ris MIN. 10 Isolation resistance, minimum value VIO = 500 V dc at TA = 25 °C VIO = 500 V dc at TA MAX. at least 100 °C Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current IF, Psi = 0) Power (output or total power dissipation) Isolation resistance VIO = 500 V dc at TA = 175 °C (Tsi) 10 Data Sheet P11307EJ6V0DS00 12 9 °C Ω PS2702-1,PS2702-2,PS2702-4 [MEMO] Data Sheet P11307EJ6V0DS00 11 PS2702-1,PS2702-2,PS2702-4 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. NEPOC is a trademark of NEC Corporation. • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. 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The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8