PHOTOCOUPLER PS2732-1,PS2733-1 HIGH COLLECTOR TO EMITTER VOLTAGE SOP MULTI PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2732-1 and PS2733-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington-connected phototransistor. This package is SOP (Small Outline Package) type and has shield effect to cut off ambient light. It is designed for high density mounting applications. FEATURES • High isolation voltage (BV = 2 500 Vr.m.s.) • High collector to emitter voltage (VCEO = 300 V: PS2732-1) (VCEO = 350 V: PS2733-1) • SOP (Small Outline Package) type • High current transfer ratio (CTR = 4 000 % TYP.) • Ordering number of taping product : PS2732-1-F3, F4, PS2733-1-F3, F4 • UL approved: File No. E72422 (S) • VDE0884 approved (Option) APPLICATIONS • Hybrid IC • Telephone/Telegraph Receiver • FAX ORDERING INFORMATION (Solder Contains Lead) Part Number PS2732-1, PS2733-1 Package 4-pin SOP Safety Standard Approval Standard products • UL approved PS2732-1-V, PS2733-1-V 4-pin SOP VDE0884 approved products (Option) ORDERING INFORMATION (Pb-Free) Part Number PS2732-1-A, PS2733-1-A Package 4-pin SOP Safety Standard Approval Standard products • UL approved PS2732-1-V-A, PS2733-1-V-A 4-pin SOP Document No. PN10248EJ01V0DS (1st edition) (Previous No. P11312EJ3V0DS00) Date Published February 2003 CP(K) VDE0884 approved products (Option) The mark shows major revised points. PS2732-1,PS2733-1 PACKAGE DIMENSIONS (in millimeters) PS2732-1 PS2733-1 4.0±0.5 TOP VIEW 4 1 3 2 1. Anode 2. Cathode 3. Emitter 4. Collector 2 0.15 +0.10 –0.05 2.0 0.1±0.1 2.1±0.2 7.0±0.3 4.4 2.54 0.4 +0.10 –0.05 0.5±0.3 0.25 M Data Sheet PN10248EJ01V0DS PS2732-1,PS2733-1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Parameter Symbol Ratings PS2732-1 Diode PS2733-1 Forward Current (DC) IF 50 mA Reverse Voltage VR 6 V ∆PD/°C 0.8 mW/°C PD 80 mW IFP 1 A Power Dissipation Derating Power Dissipation Peak Forward Current Transistor Unit *1 Collector to Emitter Voltage VCEO Emitter to Collector Voltage VECO 0.3 V IC 150 mA ∆PC/°C 1.5 mW/°C PC 150 mW BV 2 500 Vr.m.s. Operating Ambient Temperature TA –55 to +100 °C Storage Temperature Tstg –55 to +150 °C Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage *2 300 350 V *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output Data Sheet PN10248EJ01V0DS 3 PS2732-1,PS2733-1 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Transistor Symbol Conditions Forward Voltage VF IF = 10 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1 MHz Collector to Emitter Dark ICEO IF = 0 mA, VCE = 300 V CTR IF = 1 mA, VCE = 2 V VCE (sat) IF = 1 mA, IC = 2 mA MIN. TYP. MAX. Unit 1.15 1.4 V 5 µA 30 pF 400 nA Current Coupled Current Transfer Ratio 1 500 4 000 % (IC/IF) Collector Saturation 1.0 V Voltage VI-O = 1 kVDC Isolation Capacitance CI-O V = 0 V, f = 1 MHz 0.4 pF VCC = 5 V, IC = 10 mA, RL = 100 Ω 100 µs Rise Time Fall Time tr *1 tf 100 *1 Test circuit for switching time VCC Pulse Input PW = 1 ms Duty cycle = 1/10 IF VOUT 50 Ω 4 Ω RI-O *1 10 11 Isolation Resistance RL = 100 Ω Data Sheet PN10248EJ01V0DS PS2732-1,PS2733-1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) 75 50 25 25 0 50 75 25 50 75 100 TA = +100 ˚C +75 ˚C +50 ˚C +25 ˚C 0 ˚C –25 ˚C –55 ˚C 0.8 1.0 1.2 1.4 1.6 10 000 VCE = 300 V 1 000 100 10 1 0.1 –25 –50 0 25 50 75 100 Forward Voltage VF (V) Ambient Temperature TA (˚C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 1 000 5 mA 4.5 mA 4 mA 3.5 mA 3 mA 2.5 mA 140 120 100 Collector Current IC (mA) Forward Current IF (mA) 50 COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE 160 Collector Current IC (mA) 100 FORWARD CURRENT vs. FORWARD VOLTAGE 0.1 2 mA 80 1.5 mA 60 1 mA 40 20 0 1.5 mW/˚C Ambient Temperature TA (˚C) 1 0.01 0.6 150 Ambient Temperature TA (˚C) 100 10 200 0 100 Collector to Emitter Dark Current ICEO (nA) Diode Power Dissipation PD (mW) 100 IF = 5 mA 100 2 mA 1 mA 0.5 mA 10 1 IF = 0.5 mA 1 2 3 4 5 0.1 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Collector Saturation Voltage VCE (sat) (V) Collector to Emitter Voltage VCE (V) Data Sheet PN10248EJ01V0DS 5 PS2732-1,PS2733-1 CURRENT TRANSFER RATIO vs. FORWARD CURRENT 5 000 1.2 Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25 ˚C, IF = 1 mA, VCE = 2 V 0.2 0 –50 –25 0 25 50 75 Sample A VCE = 2 V 4 000 Sample B 3 000 2 000 1 000 0 0.1 100 0.5 1 5 10 Ambient Temperature TA (˚C) Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE FREQUENCY RESPONSE 20 300 VCC = 10 V, IC = 10 mA 0 Normalized Gain GV Switching Time t ( µ s) 50 td tf 10 5 ts –5 50 100 500 1k 1 kΩ –15 VCE = 4 V, IC = 10 mA, –20 Vin = 0.1 Vp-p –25 2k 100 Ω –10 1 20 RL = 10 Ω tr 100 1 kΩ 1 µF Vin –30 0.01 Load Resistance RL (Ω) 47 Ω RL Vout 0.1 1 10 Frequency f (kHz) LONG TERM CTR DEGRADATION 1.2 TA = 25 ˚C IF = 1 mA CTR (Relative Value) 1.0 0.8 TA = 60 ˚C 0.6 0.4 0.2 0 10 102 103 104 105 106 Time (Hr) Remark The measurement of TYPICAL CHARACTERISTICS are only for reference, not guaranteed. 6 Data Sheet PN10248EJ01V0DS 100 PS2732-1,PS2733-1 TAPING SPECIFICATIONS (in millimeters) 1.55±0.1 2.9 MAX. 7.4±0.1 5.5±0.05 1.5+0.1 –0 12.0±0.2 2.0±0.05 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 2.4±0.1 4.6±0.1 0.3 8.0±0.1 Tape Direction PS2732-1-F4 PS2733-1-F4 PS2732-1-F3 PS2733-1-F3 Outline and Dimensions (Reel) φ 21.0±0.8 φ 13.0±0.2 R 1.0 φ 100±1.0 2.0±0.5 φ13.0±0.2 φ 330±2.0 2.0±0.5 13.5±1.0 17.5±1.0 11.9 to 15.4 Outer edge of flange Packing: 3 500 pcs/reel Data Sheet PN10248EJ01V0DS 7 PS2732-1,PS2733-1 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering • Peak reflow temperature 260°C or below (package surface temperature) • Time of peak reflow temperature 10 seconds or less • Time of temperature higher than 220°C 60 seconds or less • Time to preheat temperature from 120 to 180°C 120±30 s • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 260˚C MAX. 220˚C to 60 s 180˚C 120˚C 120±30 s (preheating) Time (s) (2) Wave soldering • Temperature 260°C or below (molten solder temperature) • Time 10 seconds or less • Preheating conditions 120°C or below (package surface temperature) • Number of times One (Allowed to be dipped in solder including plastic mold portion.) • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute maximum ratings. 8 Data Sheet PN10248EJ01V0DS PS2732-1,PS2733-1 USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity. Data Sheet PN10248EJ01V0DS 9 PS2732-1,PS2733-1 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884) Parameter Symbol Speck Unit Application classification (DIN VDE 0109) for rated line voltages ≤ 150 Vr.m.s. IV for rated line voltages ≤ 300 Vr.m.s. III Climatic test class (DIN IEC 68 Teil 1/09.80) 55/100/21 Dielectric strength Maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) UIORM 710 Vpeak Upr 850 Vpeak Upr 1 140 Vpeak UTR 4 000 Vpeak Upr = 1.2 × UIORM, Pd < 5 pC Test voltage (partial discharge test, procedure b for all devices test) Upr = 1.6 × UIORM, Pd < 5 pC Highest permissible overvoltage Degree of pollution (DIN VDE 0109) 2 Clearance distance >5 mm Creepage distance >5 mm Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI Material group (DIN VDE 0109) 175 III a Storage temperature range Tstg –55 to +150 °C Operating temperature range TA –55 to +100 °C Isolation resistance, minimum value VIO = 500 V dc at TA = 25 °C Ris MIN. VIO = 500 V dc at TA MAX. at least 100 °C Ris MIN. 12 Ω 11 10 Ω 10 Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Tsi 150 °C Current (input current IF, Psi = 0) Isi 300 mA Power (output or total power dissipation) Psi 500 mW Ris MIN. 10 Isolation resistance VIO = 500 V dc at TA = 175 °C (Tsi) 10 Data Sheet PN10248EJ01V0DS 9 Ω 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. 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