TI TPS75103YFFR

TPS7510x
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SBVS080C – SEPTEMBER 2006 – REVISED MARCH 2007
Low Dropout, Two-Bank LED Driver with PWM Brightness Control
FEATURES
•
•
•
•
•
•
•
•
•
DESCRIPTION
Regulated Output Current with 2%
LED-to-LED Matching
Drives up to Four LEDs at 25mA Each in a
Common Cathode Topology
28mV Typical Dropout Voltage Extends
Usable Supply Range in Li-Ion Battery
Applications
Brightness Control Using PWM Signals
Two 2-LED Banks with Independent Enable
and PWM Brightness Control per Bank
No Internal Switching Signals—Eliminates EMI
Default LED Current Eliminates External
Components
– Default values from 3mA to 10mA (in 1mA
increments) available using innovative
factory EEPROM programming
– Optional external resistor can be used for
high-accuracy, user-programmable current
Over-Current and Over-Temperature
Protection
Available in Wafer Chip-Scale Package
APPLICATIONS
•
•
•
•
Keypad and Display Backlighting
White and Color LEDs
Cellular Handsets
PDAs and Smartphones
The TPS7510x linear low dropout (LDO) matching
LED current source is optimized for low power
keypad and navigation pad LED backlighting
applications. The device provides a constant current
to up to four unmatched LEDs organized in two
banks of two LEDs each in a common-cathode
topology. Without an external resistor, the current
source defaults to factory-programmable, preset
current level with ±0.5% accuracy (typical). An
optional external resistor can be used to set initial
brightness to user-programmable values with higher
accuracy. Brightness can be varied from off to full
brightness by inputting a pulse width modulation
(PWM) signal on each Enable pin. Each bank has
independent enable and brightness control, but
current matching is done to all four channels
concurrently. The input supply range is ideally suited
for single-cell Li-Ion battery supplies and the
TPS7510x can provide up to 25mA per LED.
No internal switching signals are used, eliminating
troublesome electromagnetic interference (EMI). The
TPS7510x is offered in an ultra-small, 9-ball, 0.4mm
ball-pitch wafer chip-scale package (WCSP) and a
3mm × 3mm QFN package, yielding a very compact
total solution size ideal for mobile handsets and
portable backlighting applications. The device is fully
specified over TJ = –40°C to +85°C.
VBATT
TPS7510x YFF
9-Ball WCSP
(Top View)
A3
B3
C3
A2
B2
C2
A1
B1
C1
TPS7510x
VIN
D1A
VENA
ENA
D2A
VENB
ENB
D1B
D2B
ISET
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006–2007, Texas Instruments Incorporated
TPS7510x
www.ti.com
SBVS080C – SEPTEMBER 2006 – REVISED MARCH 2007
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
ORDERING INFORMATION (1)
OPTIONS (2)
PRODUCT ID
TPS7510xyyyz
(1)
(2)
X is the nominal default diode output current (for example, 3 = 3mA, 5 = 5mA, and 0 = 10mA).
YYY is the package designator.
Z is the reel quantity (R = 3000, T = 250).
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Default set currents from 3mA to 10mA in 1mA increments are available through the use of innovative factory EEPROM programming.
Minimum order quantities may apply. Contact factory for details and availability.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
VALUE
VIN range
–0.3V to +7.0V
VISET, VENA, VENB, VDX range
–0.3V to VIN
IDX for D1A, D2A, D1B, D2B
35mA
D1A, D2A, D1B, D2B short circuit duration
Indefinite
Continuous total power dissipation
Internally limited
Junction temperature (TJ)
–55°C to +150°C
Storage temperature
–55°C to +150°C
DISSIPATION RATINGS
(1)
(2)
BOARD
PACKAGE
RθJC
RθJA
DERATING FACTOR
ABOVE
TA = +25°C
Low-K (1)
YFF
55°C/W
208°C/W
4.8mW/°C
480mW
264mW
192mW
High-K (2)
YFF
55°C/W
142°C/W
7.0mW/°C
704mW
387mW
282mW
TA < +25°C
TA = +70°C
TA = +85°C
The JEDEC low-K (1s) board used to derive this data was a 3 inch × 3 inch, two-layer board with 2 ounce copper traces on top of the
board.
The JEDEC high-K (2s2p) board used to derive this data was a 3 inch × 3 inch, multi-layer board with 1 ounce internal power and
ground planes and 2 ounce copper traces on top and bottom of the board.
RECOMMENDED OPERATING CONDITIONS
PARAMETER
MIN
VIN Input voltage
IDX Operating current per LED
tPWM On-time for PWM signal
MAX
UNIT
5.5
V
3
25
mA
+85
°C
µs
33
TJ Operating junction temperature range
2
TYP
2.7
–40
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SBVS080C – SEPTEMBER 2006 – REVISED MARCH 2007
ELECTRICAL CHARACTERISTICS
Over operating junction temperature range (TJ = –40°C to +85°C), VIN = 3.8V, DxA and DxB = 3.3V, RSET = 32.4kΩ, and ENA
and ENB = 3.8V, unless otherwise noted. Typical values are at TA = +25°C.
TYP
MAX
Shutdown supply current
PARAMETER
VENA,B = 0V, VDX = 0V
0.03
1.0
µA
Ground current
ISET = open, IDX = 5mA, VIN = 4.5V
170
200
µA
Current matching
(IDXMAX – IDXMIN/IDXMAX) × 100%
TA = +25°C
2
4
∆IDX%/∆VIN
Line regulation
3.5V ≤ VIN ≤ 4.5V, IDX = 5mA
2.0
%/V
∆IDX%/∆VDX
Load regulation
1.8V ≤ VDX ≤ 3.5V, IDX = 5mA
0.8
%/V
Dropout voltage of any
DX current source
(VDX at IDX = 0.8 × IDX, nom)
IDXnom = 5mA
28
VDO
IDXnom = 15mA
70
VISET
Reference voltage for current set
ISHDN
IQ
∆ID
IOPEN
ISET
MIN
0
TA = –40°C to +85°C
5
1.183
accuracy (1)
ISET = open, VDX = VIN – 0.2V
2.5
ISET to IDX current ratio (1)
400
VIH
Enable high level input voltage
1.2
VIL
Enable low level input voltage
IINA
Enable pin A (VENA) input current
IINB
Enable pin B (VENB) input current
tSD
Shutdown delay time
TSD
Thermal shutdown temperature
TJ
1.225
0.5
ISET pin current range
k
(1)
Diode current
TEST CONDITIONS
420
mV
1.257
5.0
VENA = 1.8V
2.2
VENB = 3.8V
4.0
VENB = 1.8V
1.8
13
Shutdown, temp increasing
+165
Reset, temp decreasing
+140
Operating junction temperature range
–40
V
3
%
62.5
µA
435
V
VENA = 3.8V
5
%
100
0.4
Delay from ENA and ENB = low to
reach shutdown current
(IDX = 0.1 × IDX, nom)
UNIT
6.1
4.9
30
V
µA
µA
µs
°C
+85
°C
Average of all four IDX outputs.
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TPS7510x
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SBVS080C – SEPTEMBER 2006 – REVISED MARCH 2007
Table 1. Recommended (1% Tolerance) Set Resistor Values
(1)
4
RSET (kΩ)
ISET (µA)
IDX (mA) (1)
511
2.4
1.0
255
4.8
2.0
169
7.2
3.0
127
9.6
4.1
102
12.0
5.0
84.5
14.5
6.1
73.2
16.7
7.0
64.9
18.9
7.9
56.2
21.8
9.2
51.1
24.0
10.1
46.4
26.4
11.1
42.2
29.0
12.2
39.2
31.3
13.1
36.5
33.6
14.1
34.0
36.0
15.1
32.4
37.8
15.9
30.1
40.7
17.1
28.7
42.7
17.9
26.7
45.9
19.3
25.5
48.0
20.2
24.3
50.4
21.2
23.2
52.8
22.2
22.1
55.4
23.3
21.5
57.0
23.9
20.5
59.8
25.1
IDX = (VSET/RSET) × k.
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SBVS080C – SEPTEMBER 2006 – REVISED MARCH 2007
PIN ASSIGNMENTS
TPS7510x YFF
9-Ball WCSP
(Top View)
A3
B3
C3
A2
B2
C2
A1
B1
C1
TERMINAL FUNCTIONS
NAME
WCSP
INPUT/
OUTPUT
DESCRIPTION
A3
I
Enable pin, Bank A. Driving this pin high turns on the current source to Bank A outputs.
Driving this pin low turns off the current source to Bank A outputs. An applied PWM signal
reduces the LED current (between 0mA and the maximum current set by ISET) as a function
of the duty cycle of the PWM signal. ENA and ENB can be tied together. ENA can be left
OPEN or connected to GND if not used. See the Application Information section for more
details.
D1A
B3
O
Diode source current output, Bank A. Connect to LED anode.
D2A
C3
O
Diode source current output, Bank A. Connect to LED anode.
I
Enable pin, Bank B. Driving this pin high turns on the current source to Bank B outputs.
Driving this pin low turns off the current source to Bank B outputs. An applied PWM signal
reduces the LED current (between 0mA and the maximum current set by ISET) as a function
of the duty cycle of the PWM signal. ENA and ENB can be tied together. ENB can be left
OPEN or connected to GND if not used. See the Application Information section for more
details.
Supply Input
ENA
ENB
A2
VIN
B2
I
GND
C2
—
Ground
ISET
A1
O
An optional resistor can be connected between this pin and GND to set the maximum
current through the LEDs. If no resistor is connected, ISET defaults to the
internally-programmed value.
D1B
B1
O
Diode source current output, Bank B. Connect to LED anode.
D2B
C1
O
Diode source current output, Bank B. Connect to LED anode.
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TPS7510x
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SBVS080C – SEPTEMBER 2006 – REVISED MARCH 2007
FUNCTIONAL BLOCK DIAGRAM
Controlled Current Source
D1A
Control
Logic
ENA
800kW
Controlled Current Source
Controlled Current Source
D2A
D1B
ENB
1MW
VIN
ISET
Control
Logic
Controlled Current Source
Int/Ext
Set Current
Sense
Current
Reference
GND
6
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D2B
TPS7510x
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SBVS080C – SEPTEMBER 2006 – REVISED MARCH 2007
TYPICAL CHARACTERISTICS
Over operating junction temperature range (TJ = –40°C to +85°C), VIN = 3.8V, DxA and DxB = 3.3V, RSET = 32.4kΩ, and ENA
and ENB = high, unless otherwise noted. Typical values are at TA = +25°C.
LED CURRENT vs DUTY CYCLE (f = 300Hz)
LINE TRANSIENT (600mV Pulse)
25
20
IOUT (mA)
3.9V
1V/div
15
VIN
3.6V
10
0.5mA/div
IOUT
5
0
0
10
20
30
40
50
60
70
80
90
20ms/div
100
Duty Cycle (%)
Figure 1.
Figure 2.
LINE TRANSIENT (300mV Pulse)
DIMMING RESPONSE (Both Channels)
1.2V
3.6V
3.3V
1V/div
VIN
0.4V
ENA = ENB
1V/div
20mA/div
0.5mA/div
IOUT
IOUT
20ms/div
20ms/div
Figure 3.
Figure 4.
DIMMING RESPONSE (Single Channel)
OUTPUT CURRENT vs HEADROOM VOLTAGE
25
ENA = 3.8V
20
-40°C
0.4V
ENB
1V/div
20mA/div
IOUT (mA)
1.2V
15
+25°C
10
+85°C
IOUT
5
0
20ms/div
0
0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20
VIN - VOUT (V)
Figure 5.
Figure 6.
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TPS7510x
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SBVS080C – SEPTEMBER 2006 – REVISED MARCH 2007
TYPICAL CHARACTERISTICS (continued)
Over operating junction temperature range (TJ = –40°C to +85°C), VIN = 3.8V, DxA and DxB = 3.3V, RSET = 32.4kΩ, and ENA
and ENB = high, unless otherwise noted. Typical values are at TA = +25°C.
OUTPUT CURRENT vs RSET
Expanded Range
IOUT (mA)
IOUT (mA)
OUTPUT CURRENT vs RSET
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
20 60 100 140 180 220 260 300 340 380 420 460 500
20
30
40
50
60
70
80
90
100
RSET (kW)
RSET (kW)
Figure 7.
Figure 8.
GROUND CURRENT vs INPUT VOLTAGE
TPS75105 OUTPUT CURRENT vs INPUT VOLTAGE
RSET = Open
180
5.4
5.3
175
170
IOUT (mA)
IQ (mA)
5.2
+85°C
165
+25°C
-40°C
5.1
5.0
+85°C
4.9
+25°C
4.8
160
4.7
-40°C
155
4.6
2.5
3.0
3.5
4.0
4.5
5.5
5.0
3.4
3.9
4.4
4.9
VIN (V)
VIN (V)
Figure 9.
Figure 10.
TPS75105 OUTPUT CURRENT vs TEMPERATURE
RSET = Open
5.4
5.9
OUTPUT CURRENT vs OUTPUT VOLTAGE
5.4
20
18
5.3
IOUT D1B
IOUT D2B
5.2
16
5.0
IOUT (mA)
IOUT (mA)
14
5.1
IOUT D2A
4.9
IOUT D1A
12
10
8
6
4.8
+85°C
+25°C
-40°C
4
4.7
2
4.6
0
-40
8
-20
0
20
40
60
80
85
0
0.5
1.0
1.5
2.0
2.5
Temperature (°C)
VOUT (V)
Figure 11.
Figure 12.
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3.0
3.5
4.0
TPS7510x
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SBVS080C – SEPTEMBER 2006 – REVISED MARCH 2007
APPLICATIONS INFORMATION
SETTING THE OUTPUT CURRENT LEVEL
The TPS7510x is a quad matched current source.
Each of the four current source output levels is set
by a single reference current. An internal voltage
reference of 1.225V (nominal) in combination with a
resistor sets the reference current level. This
reference current is then mirrored onto each of the
four outputs with a ratio of typically 420:1. The
resistor required to set the LED current is calculated
using Equation 1:
RISET =
K ´ VISET
ILED
(1)
where:
•
•
•
K is the current ratio
VISET is the internal reference voltage
ILED is the desired LED current
For example, to set the LED current level to 10mA, a
resistor value of 51.1kΩ is required. This value sets
up a reference current of 23.9µA (1.22V/51.1kΩ). In
turn, this reference current is mirrored to each output
current source, resulting in an output current of
10mA (23.9µA × 420).
The TPS7510x offers two methods for setting the
output current levels. The LED current is set either
by connecting a resistor (calculated using
Equation 1) from the ISET pin to GND, or leaving ISET
unconnected to employ the factory-programmed
RSET resistance. The internal programmed resistance
is implemented using high-precision processing and
yields a reference current accuracy of 0.5%, nominal.
Accuracy using external resistors is subject to the
tolerance of the external resistor and the accuracy of
the internal reference voltage.
The TPS7510x automatically detects the presence of
an external resistor by monitoring the current out of
the ISET pin. Current levels in excess of 3µA signify
the presence of an external resistor and the device
uses the external resistor to set the reference
current. If the current from ISET is less than 3µA, the
device defaults to the preset internal reference set
resistor. The TPS7510x is available with eight preset
current levels, from 3mA to 10mA (per output) in
1mA increments. Solutions using the preset internal
current level eliminate an external component,
thereby increasing accuracy and reducing cost.
LIMITATIONS ON LED FORWARD
VOLTAGES
The TPS7510x is a linear current source
implementing LDO regulator building blocks.
Therefore, there are some limitations to the forward
(output) voltages that can be used while maintaining
accurate operation. The first limitation is the
maximum LED forward voltage. Because LDO
technology is employed, there is the dropout voltage
to consider. The TPS7510x is an ultra-low dropout
device with typical dropouts in the range of 30mV at
5mA. Care must be taken in the design to ensure
that the difference between the lowest possible input
voltage (for example, battery cut-off) and the highest
possible forward voltage yields at least 100mV of
headroom. Headroom levels less than dropout
decrease the accuracy of the current source (see
Figure 6).
The other limitation to consider is the minimum
output voltage required to yield accurate operation.
The current source employs NMOS MOSFETs, and
a minimum forward LED voltage of approximately
1.5V on the output is required to maintain highest
accuracy. The TPS7510x is ideal for white LEDs and
color LEDs with forward voltages greater than 1.5V.
This range includes red LEDs that have typical
forward voltages of 1.7V.
USE OF EXTERNAL CAPACITORS
The TPS7510x does not require the use of any
external capacitors for stable operation. Nominal
stray and/or power-supply decoupling capacitance on
the input is adequate for stable operation. Capacitors
are not recommended on the outputs because they
are not needed for stability.
USE OF UNUSED OUTPUTS OR TYING
OUTPUTS TOGETHER
Unused outputs may be left unconnected or tied to
the VIN supply. While open outputs are acceptable,
tying unused outputs to the VIN supply increases
ESD protection. Connecting unused output to ground
violates the minimum recommended output voltage,
results in current levels that potentially exceed the
set/preset LED current and should be avoided.
Connecting outputs in parallel is an acceptable way
of increasing the amount of LED current drive. This
configuration is a useful trick when the higher current
level is a multiple of the preset value.
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TPS7510x
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SBVS080C – SEPTEMBER 2006 – REVISED MARCH 2007
USE OF ENABLE PINS FOR PWM DIMMING
The TPS7510x divides control of the LED outputs
into two banks of two current sources each. Each
bank is controlled by the use of an independent,
active-high enable pin (ENA and ENB). The enable
pin can be used for standard ON/OFF operation of
the current source, driven by standard logic levels
from processor GPIO pins, for example. Drive EN
high to turn on the bank of LEDs; drive EN low to
turn off the bank of LEDs.
Another use of the enable pin is for LED dimming.
LED brightness is a function of the current level
being driven across the diode and the time that
current is being driven through the diode. The
perceived brightness of an LED can be changed by
either varying the current level or, more effectively,
by changing the time in which that current is present.
When a PWM signal is input into the enable pin, the
duty cycle (high or ON time) determines how long
the fixed current is driven across the LEDs.
Reducing or increasing that duration has the effect of
dimming or brightening the LED, without having to
employ the more complex method of varying the
current level. This technique is particularly useful for
reducing LED brightness in low ambient light
conditions, where LED brightness is not required,
thereby decreasing current consumption. The enable
pins can also be used for LED blinking, varying blink
rates based on system status.
Although providing many useful applications, PWM
dimming does have a minimum duty cycle required
to achieve the required current level. The
recommended minimum on time of the TPS7510x is
approximately 33µs. On times less than 33µs result
in reductions in the output current by not allowing
enough time for the output to reach the desired
current level. Also, having both enables switching
together, asynchronously, or having one enable on at
all times, impacts the minimum recommended on
time (see Figure 4 and Figure 5). If one enable is
already on, the speed at which the other channel
turns on is faster than if both channel were turning
on together or if the other channel is off. Therefore,
connecting one enable on allows for approximately
10µs to 12µs shorter minimum on times of the
switching enable channel.
consumption. Connecting unused enable pins to
ground increases ESD protection. If connected to
VIN, a small amount of current drains through the
enable input (see the Electrical Characteristics
table).
LOAD REGULATION
The TPS7510x is designed to provide very tight load
regulation. In the case of a fixed current source, the
output load change is a change in voltage. Tight load
regulation means that output voltages (LED forward
voltages) with large variations can be used without
impacting the fixed current being sourced by the
output or the output-to-output current matching. The
permissible variation on the output not only allows for
large variations in white LED forward voltages, but
even permits the use of different color LEDs on
different outputs with minimal effect on output
current.
LINE REGULATION
The TPS7510x is also designed to provide very tight
line regulation. This architecture allows for voltage
transient events to occur on the power supply
(battery) without impacting the fixed output current
levels or the output to output current matching. A
prime example of such a supply transient event is
the occurrence of a transmit pulse on the radio of a
mobile handset. These transient pulses can cause
variations of 300mV and 600mV on the supply to the
TPS7510x. The line regulation limitation is that the
lower supply voltage level of the event does not
cause the input to output voltage difference to drop
below the dropout voltage range.
TPS7510x
Dimming PWM
or CPU GPIO
ENA
D1A
ENB
D2A
D1B
VIN
Li-Ion
Battery
D2B
ISET
GND
RSET
(optional)
Unused enable pins can be left unconnected or
connected to ground to minimize current
Figure 13. Typical Application Diagram
10
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SBVS080C – SEPTEMBER 2006 – REVISED MARCH 2007
1,213
1,193
1,213
1,193
Figure 14. YFF Wafer Chip-Scale Package Dimensions (in mm)
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PACKAGE OPTION ADDENDUM
www.ti.com
16-Apr-2007
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TPS75103YFFR
ACTIVE
DSBGA
YFF
9
3000 Green (RoHS &
no Sb/Br)
SNAG
Level-1-260C-UNLIM
TPS75103YFFT
ACTIVE
DSBGA
YFF
9
250
Green (RoHS &
no Sb/Br)
SNAG
Level-1-260C-UNLIM
TPS75105YFFR
ACTIVE
DSBGA
YFF
9
3000 Green (RoHS &
no Sb/Br)
Call TI
Level-1-260C-UNLIM
TPS75105YFFT
ACTIVE
DSBGA
YFF
9
250
Call TI
Level-1-260C-UNLIM
Green (RoHS &
no Sb/Br)
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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Addendum-Page 1
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