INA210, INA211 INA212, INA213 INA214 SC70 Package www.ti.com ....................................................................................................................................................................................................... SBOS437 – MAY 2008 Voltage Output, High or Low Side Measurement, Bi-Directional Zerø-Drift Series CURRENT SHUNT MONITOR FEATURES APPLICATIONS • WIDE COMMON-MODE RANGE: –0.3V to 26V • OFFSET VOLTAGE: ±35µV (Max, INA210) (Enables shunt drops of 10mV full-scale) • ACCURACY – ±1% Gain Error (Max over temperature) – 0.5µV/°C Offset Drift (Max) – 10ppm/°C Gain Drift (Max) • CHOICE OF GAINS: – INA210: 200V/V – INA211: 500V/V – INA212: 1000V/V – INA213: 50V/V – INA214: 100V/V • QUIESCENT CURRENT: 100µA (max) • SC70 package • • • • • • 1 2 NOTEBOOK COMPUTERS CELL PHONES TELECOM EQUIPMENT POWER MANAGEMENT BATTERY CHARGERS WELDING EQUIPMENT DESCRIPTION The INA210, INA211, INA212, INA213, and INA214 are voltage output current shunt monitors that can sense drops across shunts at common-mode voltages from –0.3V to 26V, independent of the supply voltage. Five fixed gains are available: 50V/V, 100V/V, 200V/V, 500V/V, or 1000V/V. The low offset of the Zerø-Drift architecture enables current sensing with maximum drops across the shunt as low as 10mV full-scale. These devices operate from a single +2.7V to +26V power supply, drawing a maximum of 100µA of supply current. All versions are specified over the extended operating temperature range (–40°C to +125°C), and offered in an SC70 package. REF GND +2.7V to +26V RSHUNT Supply Reference Voltage INA21x R3 R2 R4 IN- IN+ V+ CBYPASS 0.01mF to 0.1mF Output OUT R1 Load PRODUCT GAIN R3 and R4 R1 and R2 INA210 INA211 INA212 INA213 INA214 200 500 1000 50 100 5kW 2kW 1kW 20kW 10kW 1MW 1MW 1MW 1MW 1MW 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2008, Texas Instruments Incorporated INA210,, INA211 INA212, INA213 INA214 SBOS437 – MAY 2008 ....................................................................................................................................................................................................... www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. PACKAGE/ORDERING INFORMATION (1) PRODUCT GAIN PACKAGE PACKAGE DESIGNATOR PACKAGE MARKING INA210 200V/V SC70-6 DCK CET INA211 (1) (2) (2) 500V/V SC70-6 DCK CEU INA212 (2) 1000V/V SC70-6 DCK CEV INA213 50V SC70-6 DCK CFT INA214 100V/V SC70-6 DCK CFV For the most current package and ordering information, see the Package Option Addendum located at the end of this data sheet, or refer to our web site at www.ti.com. Available Q3, 2008. ABSOLUTE MAXIMUM RATINGS (1) Over operating free-air temperature range, unless otherwise noted. Supply Voltage INA210, INA211, INA212, INA213, INA214 UNIT +26 V –26 to +26 V GND–0.3 to +26 V REF Input GND–0.3 to (V+)+0.3 V Output (3) GND–0.3 to (V+)+0.3 V 5 mA Operating Temperature –55 to +150 °C Storage Temperature –65 to +150 °C Junction Temperature +150 °C Human Body Model (HBM) 4000 V Charged-Device Model (CDM) 1000 V Machine Model (MM) 200 V Analog Inputs, VIN+, VIN– (2) Differential (VIN+)–(VIN–) Common-Mode (3) Input Current into Any Pin (3) ESD Ratings: (1) (2) (3) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively. Input Voltage at any pin may exceed the voltage shown if the current at that pin is limited to 5mA. PIN CONFIGURATION DCK PACKAGE SC70-6 (TOP VIEW) 2 Submit Documentation Feedback REF 1 6 OUT GND 2 5 IN- V+ 3 4 IN+ Copyright © 2008, Texas Instruments Incorporated Product Folder Link(s): INA210 INA211 INA212 INA213 INA214 INA210,, INA211 INA212, INA213 INA214 www.ti.com ....................................................................................................................................................................................................... SBOS437 – MAY 2008 ELECTRICAL CHARACTERISTICS Boldface limits apply over the specified temperature range, TA = –40°C to +125°C. At TA = +25°C, VSENSE = VIN+ – VIN–. INA210, INA213 and INA214: VS = +5V, VIN+ = 12V, VREF = VS/2, unless otherwise noted. INA211 and INA212: VS = +12V, VIN+ = 12V, VREF = VS/2, unless otherwise noted. INA210, INA211, INA212, INA213, INA214 (1) PARAMETER CONDITIONS MIN TYP MAX UNIT 26 V INPUT Common-Mode Input Range Common-Mode Rejection VCM CMR -0.3 VIN+ = 0V to +26V, VSENSE = 0mV INA210, INA211, INA212, INA214 INA213 Offset Voltage, RTI (2) VOS 105 140 dB 100 120 dB VSENSE = 0mV ±0.55 ±35 µV INA213 ±5 ±100 µV INA214 ±1 ±60 µV 0.1 0.5 µV/°C ±0.1 ±10 µV/V 28 35 µA INA210, INA211, INA212 vs Temperature dVOS/dT vs Power Supply PSR Input Bias Current Input Offset Current VS = +2.7V to +18V, VIN+ = +18V, VSENSE = 0mV IB VSENSE = 0mV IOS VSENSE = 0mV 15 ±0.02 µA 200 V/V OUTPUT Gain, INA210 G INA211 500 VV INA212 1000 V/V INA213 50 V/V INA214 100 Gain Error VSENSE = –5mV to 5mV vs Temperature V/V ±0.02 ±1 % 3 10 ppm/°C Nonlinearity Error VSENSE = –5mV to 5mV ±0.01 % Maximum Capacitive Load No sustained oscillation 1 nF VOLTAGE OUTPUT (3) RL = 10kΩ to GND Swing to V+ Power Supply Rail Swing to GND (V+)-0.05 (V+)-0.2 V (VGND)+0.005 (VGND)+0.05 V FREQUENCY RESPONSE Bandwidth GBW Slew Rate SR CLOAD = 10pF 14 kHz 0.4 V/µs 25 nV/√Hz NOISE, RTI (2) Voltage Noise Density POWER SUPPLY Operating Voltage Range Quiescent Current VS IQ +2.7 VSENSE = 0mV 65 Over Temperature +26 V 100 µA 115 µA TEMPERATURE RANGE Specified Range –40 +125 °C Operating Range –55 +150 °C Thermal Resistance θ JA SC70 (1) (2) (3) 250 °C/W Specifications for INA211 and INA212 are preview. RTI = referred-to-input. See Typical Characteristic curve, Output Voltage Swing vs Output Current (Figure 10). Copyright © 2008, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): INA210 INA211 INA212 INA213 INA214 3 INA210,, INA211 INA212, INA213 INA214 SBOS437 – MAY 2008 ....................................................................................................................................................................................................... www.ti.com TYPICAL CHARACTERISTICS The INA210 is used for typical characteristics at TA = +25°C, VS = +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted. INPUT OFFSET VOLTAGE PRODUCTION DISTRIBUTION OFFSET VOLTAGE vs TEMPERATURE 100 80 Population Offset Voltage (mV) 60 40 20 0 -20 -40 -60 30 35 20 25 15 5 10 0 -5 -10 -15 -20 -25 -30 -35 -80 -100 -50 -25 0 25 50 75 100 125 150 Temperature (°C) Offset Voltage (mV) Figure 1. Figure 2. COMMON-MODE REJECTION PRODUCTION DISTRIBUTION COMMON-MODE REJECTION RATIO vs TEMPERATURE 5 4 Population CMRR (mV/V) 3 2 1 0 -1 -2 -3 -4 -5.0 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -5 -50 -25 0 25 50 75 100 125 150 100 125 150 Temperature (°C) Common-Mode Rejection Ratio (mV/V) Figure 3. Figure 4. GAIN ERROR PRODUCTION DISTRIBUTION GAIN ERROR vs TEMPERATURE 1.0 20 Typical Units Shown 0.8 Population Gain Error (%) 0.6 0.4 0.2 0 -0.2 -0.4 -0.6 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -0.8 Gain Error (%) -1.0 -50 -25 0 25 Figure 5. 4 Submit Documentation Feedback 50 75 Temperature (°C) Figure 6. Copyright © 2008, Texas Instruments Incorporated Product Folder Link(s): INA210 INA211 INA212 INA213 INA214 INA210,, INA211 INA212, INA213 INA214 www.ti.com ....................................................................................................................................................................................................... SBOS437 – MAY 2008 TYPICAL CHARACTERISTICS (continued) The INA210 is used for typical characteristics at TA = +25°C, VS = +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted. GAIN vs FREQUENCY POWER-SUPPLY REJECTION RATIO vs FREQUENCY 50 160 140 40 120 |PSRR| (dB) Gain (dB) 30 20 10 VS = +5V VCM = 0V VDIF = 15mV Sine VREF = 2.5V 0 -10 10 80 60 VS = +5V + 250mV Sine Disturbance VCM = 0V VDIF = Shorted VREF = 2.5V 40 20 0 1k 100 100 10k 100k 1M 10M 1 100 10 Frequency (Hz) Figure 8. COMMON-MODE REJECTION RATIO vs FREQUENCY OUTPUT VOLTAGE SWING vs OUTPUT CURRENT Output Voltage Swing (V) 140 |CMRR| (dB) 120 100 80 60 VS = +5V CM V = 1V Sine VDIF = Shorted VREF = 2.5V 20 0 1 10 100 1k 10k 100k V+ (V+) - 0.5 (V+) - 1 (V+) - 1.5 (V+) - 2 (V+) - 2.5 (V+) - 3 100k VS = 5V to 26V VS = 2.7V to 26V VS = 2.7V GND + 3 GND + 2.5 GND + 2 GND + 1.5 GND + 1 GND + 0.5 GND 1M TA = -40C TA = +25C TA = +125C VS = 2.7V to 26V 0 5 10 Frequency (Hz) 15 20 25 30 35 40 Output Current (mA) Figure 9. Figure 10. INPUT BIAS CURRENT vs COMMON-MODE VOLTAGE with SUPPLY VOLTAGE = +5V INPUT BIAS CURRENT vs COMMON-MODE VOLTAGE with SUPPLY VOLTAGE = 0V (Shutdown) 50 30 25 40 IB+, IB-, VREF = 0V Input Bias Current (mA) Input Bias Current (mA) 10k Figure 7. 160 40 1k Frequency (Hz) 30 20 IB+, IB-, VREF = 2.5V 10 0 20 IB+, VREF = 2.5V 15 10 5 IB+, IB-, VREF = 0V and IB-, VREF = 2.5V 0 -10 -5 0 5 10 15 20 25 30 0 5 10 15 20 Common-Mode Voltage (V) Common-Mode Voltage (V) Figure 11. Figure 12. Copyright © 2008, Texas Instruments Incorporated 25 Submit Documentation Feedback Product Folder Link(s): INA210 INA211 INA212 INA213 INA214 30 5 INA210,, INA211 INA212, INA213 INA214 SBOS437 – MAY 2008 ....................................................................................................................................................................................................... www.ti.com TYPICAL CHARACTERISTICS (continued) The INA210 is used for typical characteristics at TA = +25°C, VS = +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted. INPUT BIAS CURRENT vs TEMPERATURE QUIESCENT CURRENT vs TEMPERATURE 35 100 90 Quiescent Current (mA) Input Bias Current (mA) 30 25 20 15 10 5 80 70 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 0 -50 150 0 -25 Temperature (°C) 100 INPUT-REFERRED VOLTAGE NOISE vs FREQUENCY 0.1Hz to 10Hz VOLTAGE NOISE (Referred-to-Input) INA214 INA211 10 INA210 VS = ±2.5V VREF = 0V VIN-, VIN+ = 0V 100 125 150 INA212 Referred-to-Input Voltage Noise (200nV/div) Input-Reffered Voltage Noise (nV/Öz) 75 Figure 14. INA213 10 50 Figure 13. 100 1 25 Temperature (°C) 1k 10k VS = ±2.5V VCM = 0V VDIF = 0V VREF = 0V Time (1s/div) 100k Figure 16. STEP RESPONSE (10mVPP Input Step) COMMON-MODE VOLTAGE TRANSIENT RESPONSE 2VPP Output Signal 10mVPP Input Signal Time (100ms/div) Common Voltage Step 0V Output Voltage 0V Time (50ms/div) Figure 17. 6 Submit Documentation Feedback Output Voltage (40mV/div) Figure 15. Common-Mode Voltage (1V/div) Input Voltage (5mV/diV) Output Voltage (0.5V/diV) Frequency (Hz) Figure 18. Copyright © 2008, Texas Instruments Incorporated Product Folder Link(s): INA210 INA211 INA212 INA213 INA214 INA210,, INA211 INA212, INA213 INA214 www.ti.com ....................................................................................................................................................................................................... SBOS437 – MAY 2008 TYPICAL CHARACTERISTICS (continued) The INA210 is used for typical characteristics at TA = +25°C, VS = +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted. INVERTING DIFFERENTIAL INPUT OVERLOAD NONINVERTING DIFFERENTIAL INPUT OVERLOAD Noninverting Input Overload 2V/div 2V/div Inverting Input Overload Output Output 0V 0V VS = 5V, VCM = 12V, VREF = 2.5V VS = 5V, VCM = 12V, VREF = 2.5V Time (250ms/div) Time (250ms/div) Figure 19. Figure 20. START-UP RESPONSE BROWNOUT RECOVERY Supply Voltage 1V/div 1V/div Supply Voltage Output Voltage Output Voltage 0V VS = 5V, 1kHz Step with VDIFF = 0V, VREF = 2.5V Time (100ms/div) 0V VS = 5V, 1kHz Step with VDIFF = 0V, VREF = 2.5V Time (100ms/div) Figure 21. Copyright © 2008, Texas Instruments Incorporated Figure 22. Submit Documentation Feedback Product Folder Link(s): INA210 INA211 INA212 INA213 INA214 7 INA210,, INA211 INA212, INA213 INA214 SBOS437 – MAY 2008 ....................................................................................................................................................................................................... www.ti.com APPLICATION INFORMATION BASIC CONNECTIONS Figure 23 shows the basic connections of the INA210-INA214. The input pins, IN+ and IN–, should be connected as closely as possible to the shunt resistor to minimize any resistance in series with the shunt resistance. Load UNIDIRECTIONAL OPERATION REF GND +2.7V to +26V RSHUNT Supply Reference Voltage Alternatively, there are applications that must measure current over a wide dynamic range that can take advantage of the low offset on the low end of the measurement. Most often, these applications can use the lower gain INA213 or INA214 to accommodate larger shunt drops on the upper-end of the scale. For instance, an INA213 operating on a 3.3V supply could easily handle a full-scale shunt drop of 60mV, with only 60µV of offset. INA21x OUT R1 R3 R2 R4 Output IN- IN+ V+ CBYPASS 0.01mF to 0.1mF Figure 23. Typical Application Power-supply bypass capacitors are required for stability. Applications with noisy or high impedance power supplies may require additional decoupling capacitors to reject power-supply noise. Connect bypass capacitors close to the device pins. POWER SUPPLY The input circuitry of the INA210-INA214 can accurately measure beyond its power-supply voltage, V+. For example, the V+ power supply can be 5V, whereas the load power supply voltage can be as high as +26V. However, the output voltage range of the OUT terminal is limited by the voltages on the power-supply pin. Note also that the INA210-INA214 can withstand the full –0.3V to +26V in the input pins, regardless of whether the device has power applied or not. Unidirectional operation allows the INA210-INA214 to measure currents through a resistive shunt in one direction. The most frequent case of unidirectional operation sets the output at ground by connecting the REF pin to ground. In unidirectional applications where the highest possible accuracy is desirable at very low inputs, bias the REF pin to a convenient value above 50mV to get the device output swing into the linear range for zero inputs. A less frequent case of unipolar output biasing is to bias the output by connecting the REF pin to the supply; in this case, the quiescent output for zero input is at quiescent supply. This configuration would only respond to negative currents (inverted voltage polarity at the device input). BIDIRECTIONAL OPERATION Bidirectional operation allows the INA210-INA214 to measure currents through a resistive shunt in two directions. In this case, the output can be set anywhere within the limits of what the reference inputs allow (that is, between 0V to V+). Typically, it is set at half-scale for equal range in both directions. In some cases, however, it is set at a voltage other than half-scale when the bidirectional current is nonsymmetrical. The quiescent output voltage is set by applying voltage to the reference input. Under zero differential input conditions the output assumes the same voltage as is applied to the reference input. SELECTING RS The zero-drift offset performance of the INA210-INA214 offers several benefits. Most often, the primary advantage of the low offset characteristic enables lower full-scale drops across the shunt. For example, non-zero-drift current shunt monitors typically require a full-scale range of 100mV. The INA210-INA214 series gives equivalent accuracy at a full-scale range on the order of 10mV. This accuracy reduces shunt dissipation by an order of magnitude with many additional benefits. 8 Submit Documentation Feedback Copyright © 2008, Texas Instruments Incorporated Product Folder Link(s): INA210 INA211 INA212 INA213 INA214 INA210,, INA211 INA212, INA213 INA214 www.ti.com ....................................................................................................................................................................................................... SBOS437 – MAY 2008 INPUT FILTERING An obvious and straightforward location for filtering is at the output of the INA210-INA214; however, this location negates the advantage of the low output impedance of the internal buffer. The only other option for filtering is at the input pins of the INA210-INA214; this location requires consideration of the ±30% tolerance of the input impedance. Figure 24 shows a filter placed at the input pins. RSHUNT << RFILTER LOAD VSUPPLY RFILTER < 10W RFILTER < 10W Reference Voltage SHUTTING DOWN THE INA210-INA214 SERIES While the INA210-INA214 series does not have a shutdown pin, its low power consumption allows powering from the output of a logic gate or transistor switch that can turn on and turn off the INA210-INA214 power-supply quiescent current. However, in current shunt monitoring applications. there is also a concern for how much current is drained from the shunt circuit in shutdown conditions. Evaluating this current drain involves considering the simplified schematic of the INA210-INA214 in shutdown mode shown in Figure 25. CFILTER REF INA21x GND R1 R3 INf-3dB +2.7V to +26V f-3dB = IN+ V+ R2 1 2p (2 RFILTER) CFILTER RSHUNT Supply Reference Voltage Output OUT REF INA21x GND 1MW R3 R2 R4 Load Output OUT IN- R4 CBYPASS 0.01mF to 0.1mF Shutdown Control CBYPASS Figure 24. Input Filter Using the lowest possible resistor values minimizes both the initial shift in gain and effects of tolerance. The effect on initial gain is given by Equation 1: GainError% = 100 - [100 ´ {R/(R + RFILT)}] (1) Where R is the value for R3 or R4 from Table 1 for the model is in question. Table 1. PRODUCT GAIN R3 AND R4 INA210 200 5kΩ INA211 500 2kΩ INA212 1000 1kΩ INA213 50 20kΩ INA214 100 10kΩ Using an INA212, for example, the total effect on gain error can be calculated by replacing the R with 1kΩ− 30%, (or 700Ω) or 1kΩ+ 30% (or 1.3kΩ). The tolerance extremes of RFILT can also be inserted into the equation. If a pair of 100Ω, 1% resistors are used on the inputs, the initial gain error is approximately 2%. Copyright © 2008, Texas Instruments Incorporated IN+ V+ PRODUCT R3 and R4 INA210 INA211 INA212 INA213 INA214 5kW 2kW 1kW 20kW 10kW NOTE: 1MW paths from shunt inputs to reference and INA21x outputs. Figure 25. Basic Circuit for Shutting Down INA210-INA214 with Grounded Reference Note that there is typically slightly more than 1MΩ impedance (from the combination of 1MΩ feedback and 5kΩ input resistors) from each input of the INA210-INA214 to the OUT pin and to the REF pin. The amount of current flowing through these pins depends on the respective ultimate connection. For example, if the REF pin is grounded, the calculation of the effect of the 1MΩ impedance from the shunt to ground is straightforward. However, if the reference or op amp is powered while the INA210-INA214 is shut down, the calculation is direct; instead of assuming 1MΩ to ground, however, assume 1MΩ to the reference voltage. If the reference or op amp is also shut down, some knowledge of the reference or op amp output impedance under shutdown conditions is required. For instance, if the reference source behaves as an open circuit when it is unpowered, little or no current flows through the 1MΩ path. Regarding the 1MΩ path to the output pin, the output stage of a disabled INA210-INA214 does constitute a good path to ground; consequently, this current is directly proportional to a shunt common-mode voltage impressed across a 1MΩ resistor. Submit Documentation Feedback Product Folder Link(s): INA210 INA211 INA212 INA213 INA214 9 INA210,, INA211 INA212, INA213 INA214 SBOS437 – MAY 2008 ....................................................................................................................................................................................................... www.ti.com As a final note, when the device is powered up, there is an additional, nearly constant, and well-matched 25µA that flows in each of the inputs as long as the shunt common-mode voltage is 3V or higher. Below 2V common-mode, the only current effects are the result of the 1MΩ resistors. REF INPUT IMPEDANCE EFFECTS As with any difference amplifier, the INA210-INA214 series common-mode rejection ratio is affected by any impedance present at the REF input. This concern is not a problem when the REF pin is connected directly to most references or power supplies. When using resistive dividers from the power supply or a reference voltage, the REF pin should be buffered by an op amp. In systems where the INA210-INA214 output can be sensed differentially, such as by a differential input analog-to-digital converter (ADC) or by using two separate ADC inputs, the effects of external impedance on the REF input can be cancelled. Figure 26 depicts a method of taking the output from the INA210-INA214 by using the REF pin as a reference. RSHUNT Supply USING THE INA210 WITH COMMON-MODE TRANSIENTS ABOVE 26V With a small amount of additional circuitry, the INA210-INA214 series can be used in circuits subject to transients higher than 26V, such as automotive applications. Use only zener diode or zener-type transient absorbers (sometimes referred to as Transzorbs)— any other type of transient absorber has an unacceptable time delay. Start by adding a pair of resistors as shown in Figure 27 as a working impedance for the zener. It is desirable to keep these resistors as small as possible, most often around 10Ω. Larger values can be used with an effect on gain that is discussed in the section on input filtering. Because this circuit is limiting only short-term transients, many applications are satisfied with a 10Ω resistor along with conventional zener diodes of the lowest power rating that can be found. This combination uses the least amount of board space. These diodes can be found in packages as small as SOT-523 or SOD-523. RSHUNT Supply RPROTECT 10W Load RPROTECT 10W Load Reference Voltage +2.7V to +26V REF INA21x GND R1 ADC OUT R3 Output IN- GND INA21x OUT 1MW R3 1MW R4 Output IN- IN+ V+ R2 V+ Shutdown Control R4 CBYPASS 0.01mF to 0.1mF IN+ CBYPASS Figure 26. Sensing INA210-INA214 to Cancel Effects of Impedance on the REF Input 10 REF Submit Documentation Feedback Figure 27. INA210-INA214 Transient Protection Using Dual Zener Diodes Copyright © 2008, Texas Instruments Incorporated Product Folder Link(s): INA210 INA211 INA212 INA213 INA214 INA210,, INA211 INA212, INA213 INA214 www.ti.com ....................................................................................................................................................................................................... SBOS437 – MAY 2008 In the event that low-power zeners do not have sufficient transient absorption capability and a higher power transzorb must be used, the most package-efficient solution then involves using a single transzorb and back-to-back diodes between the device inputs. The most space-efficient solutions are dual series-connected diodes in a single SOT-523 or SOD-523 package. This method is shown in Figure 28. In either of these examples, the total board area required by the INA210-INA214 with all protective components is less than that of an SO-8 package, and only slightly greater than that of an MSOP-8 package. RSHUNT Supply RPROTECT 10W Load RPROTECT 10W Reference Voltage INA21x REF GND OUT 1MW R3 1MW R4 V+ Shutdown Control Output IN- IN+ CBYPASS Figure 28. INA210-INA214 Transient Protection Using a Single Transzorb and Input Clamps Copyright © 2008, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): INA210 INA211 INA212 INA213 INA214 11 PACKAGE OPTION ADDENDUM www.ti.com 15-May-2008 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty INA210AIDCKR ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR INA210AIDCKRG4 ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR INA210AIDCKT ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR INA210AIDCKTG4 ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR INA211AIDCKR PREVIEW SC70 DCK 6 3000 TBD Call TI Call TI Lead/Ball Finish MSL Peak Temp (3) INA211AIDCKT PREVIEW SC70 DCK 6 250 TBD Call TI Call TI INA212AIDCKR PREVIEW SC70 DCK 6 3000 TBD Call TI Call TI INA212AIDCKT PREVIEW SC70 DCK 6 250 TBD Call TI Call TI INA213AIDCKR ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR INA213AIDCKRG4 ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR INA213AIDCKT ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR INA213AIDCKTG4 ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR INA214AIDCKR ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR INA214AIDCKRG4 ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR INA214AIDCKT ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR INA214AIDCKTG4 ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Addendum-Page 1 PACKAGE OPTION ADDENDUM www.ti.com 15-May-2008 Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 10-May-2008 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing INA210AIDCKR SC70 DCK 6 SPQ Reel Reel Diameter Width (mm) W1 (mm) A0 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 3000 180.0 9.2 4.0 2.24 2.34 4.0 8.0 Q3 INA210AIDCKT SC70 DCK 6 250 180.0 9.2 4.0 2.24 2.34 4.0 8.0 Q3 INA213AIDCKR SC70 DCK 6 3000 180.0 9.2 4.0 2.24 2.34 4.0 8.0 Q3 INA213AIDCKT SC70 DCK 6 250 180.0 9.2 4.0 2.24 2.34 4.0 8.0 Q3 INA214AIDCKR SC70 DCK 6 3000 180.0 9.2 4.0 2.24 2.34 4.0 8.0 Q3 INA214AIDCKT SC70 DCK 6 250 180.0 9.2 4.0 2.24 2.34 4.0 8.0 Q3 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 10-May-2008 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) INA210AIDCKR SC70 DCK 6 3000 202.0 201.0 28.0 INA210AIDCKT SC70 DCK 6 250 202.0 201.0 28.0 INA213AIDCKR SC70 DCK 6 3000 202.0 201.0 28.0 INA213AIDCKT SC70 DCK 6 250 202.0 201.0 28.0 INA214AIDCKR SC70 DCK 6 3000 202.0 201.0 28.0 INA214AIDCKT SC70 DCK 6 250 202.0 201.0 28.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. 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