PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • • • • UPA826TF OUTLINE DIMENSIONS (Units in mm) LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: Cre = 0.4 pF TYP SMALL PACKAGE STYLE: 2 NE685 die in a 2 mm x 1.25 mm x 0.6 mm package Package Outline TS06 (Top View) 2.1 ± 0.1 1.25 ± 0.1 0.65 6 2 5 3 4 +0.10 1.3 DESCRIPTION The UPA826TF has two built-in low-voltage transistors which are designed for low-noise amplification in the VHF to UHF band. The two die are chosen from adjacent locations on the wafer. These features combined with the pin configuration make this device ideal for balanced or mirrored applications. This device is suitable for very low voltage/low current, and low noise applications. The thinner package style allows for higher density designs. 1 2.0 ± 0.2 0.6 ± 0.1 0.45 0.22 - 0.05 (All Leads) 0.13 ± 0.05 0 ~ 0.1 PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS UPA826TF TS06 UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 µA 0.1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.1 Gain1 at hFE DC Current fT Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz Cre VCE = 3 V, IC = 10 mA 75 110 GHz 12 0.4 Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz pF |S21E|2 Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz dB NF Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz dB hFE1/hFE2 hFE Ratio, VCE = 3 V, Ic = 10 mA 7 0.7 8.5 1.5 0.85 150 2.5 1.0 hFE1 = Smaller hFE value between Q1 and Q2 hFE2 = Larger hFE value between Q1 and Q2 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter. California Eastern Laboratories UPA826TF ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS VCBO Collector to Base Voltage V RATINGS 9 VCEO Collector to Emitter Voltage V 6 VEBO Emitter to Base Voltage V 2 IC Collector Current mA 30 PT Total Power Dissipation 1 Element 2 Elements2 mW mW 150 200 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Note: 1.Operation in excess of any one of these parameters may result in permanent damage. 2.When operating both devices, the power dissipation for either device should not exceed 110 mW. TYPICAL PERFORMANCE CURVES (TA = 25˚C) COLLECTOR CURRENT vs. DC BASE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 50 Collector Current, lc (mA) Total Power Dissipation, PT (mW) VCE = 3 V Free Air 200 2 El em en ts in To t al Pe rE lem en 100 t 0 50 100 40 30 20 10 0 150 0.5 1.0 Ambient Temperature, TA (°C) DC Base Voltage, VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 60 200 500 µA 400 µA DC Current Gain, hFE Collector Current, lc (mA) 50 40 300 µA 30 200 µA 20 lB=100 µA 5V VCE = 3 V 100 10 0 0 1 2 3 4 5 Collector to Emitter Voltage, VCE (V) 6 0.1 0.2 0.5 1 2 5 10 20 Collector Current, lc (mA) 50 100 UPA826TF TYPICAL PERFORMANCE CURVES (TA = 25˚C) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 14 f = 2 GHz Insertion Power Gain, |S21E|2 (dB) Gain Bandwidth Product, fT (GHz) INSERTION POWER GAIN vs. COLLECTOR CURRENT 5V 12 3V 10 8 VCE = 1 V 6 4 f = 2 GHz 5V 8 3V VCE = 1 V 6 4 2 2 0.5 1 2 5 10 20 1 50 Collector Current, lc (mA) 5 10 20 50 Collector Current, lc (mA) FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE NOISE FIGURE vs. COLLECTOR CURRENT 0.6 4 VCE = 3 V f = 2 GHz f = 1 MHz Feedback Capacitance, Cre (pF) Noise Figure, NF (dB) 2 3 2 1 0.5 0.4 0.3 0.2 0 0.5 1 2 5 10 20 Collector Current, lc (mA) 50 0.5 1 2 5 10 Collector to Base Voltage, VCB (V) 20 UPA826TF TYPICAL SCATTERING PARAMETERS (TA = 25°C) Q1 VCE = 3 V, IC = 1 mA, ZO = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.98 0.97 0.95 0.93 0.90 0.87 0.84 0.80 0.76 0.73 0.64 0.51 0.43 0.35 0.31 0.35 S21 ANG -5.93 -11.90 -18.17 -24.00 -30.10 -36.17 -42.49 -48.69 -55.28 -61.26 -74.79 -96.77 -112.09 -138.38 175.03 140.64 MAG 2.38 2.36 2.39 2.35 2.35 2.33 2.30 2.29 2.29 2.24 2.19 2.10 2.00 1.84 1.62 1.41 S12 ANG 172.32 165.08 158.35 151.83 145.70 140.22 134.45 129.32 123.53 118.31 108.30 93.80 84.70 72.75 54.64 40.02 MAG 0.02 0.04 0.06 0.07 0.09 0.10 0.12 0.13 0.14 0.15 0.16 0.18 0.19 0.19 0.20 0.21 S22 ANG 85.76 81.15 76.27 72.22 68.30 64.18 60.68 56.90 53.94 51.07 45.85 39.24 36.24 32.40 29.55 28.96 MAG 1.00 0.99 0.97 0.96 0.94 0.92 0.89 0.87 0.84 0.81 0.76 0.69 0.65 0.60 0.53 0.47 ANG -3.86 -7.44 -11.14 -14.73 -18.02 -21.42 -24.18 -27.47 -29.94 -32.50 -36.89 -42.90 -46.79 -51.51 -59.91 -69.74 Q2 VCE = 3 V, IC = 1 mA, ZO = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.98 0.97 0.95 0.93 0.90 0.87 0.84 0.81 0.77 0.73 0.65 0.54 0.47 0.40 0.33 0.33 S21 ANG -5.93 -11.82 -17.85 -23.59 -29.61 -35.62 -41.49 -47.40 -53.49 -59.00 -71.05 -89.53 -101.29 -120.45 -153.17 177.01 MAG 2.43 2.41 2.42 2.39 2.38 2.37 2.34 2.32 2.32 2.26 2.21 2.13 2.02 1.90 1.71 1.54 S12 ANG 171.79 164.40 157.59 151.04 144.91 139.49 133.87 128.66 123.12 118.06 108.31 94.49 86.01 74.87 57.60 42.57 MAG 0.02 0.04 0.05 0.07 0.09 0.10 0.11 0.12 0.13 0.14 0.16 0.17 0.18 0.19 0.21 0.23 S22 ANG 85.64 80.86 76.45 72.26 68.73 64.78 61.52 58.06 55.30 52.86 48.61 43.82 41.68 39.57 38.43 38.11 MAG 0.99 0.99 0.97 0.95 0.93 0.90 0.87 0.85 0.82 0.78 0.73 0.66 0.61 0.55 0.46 0.38 ANG -3.75 -7.53 -11.10 -14.56 -17.91 -21.19 -23.71 -26.91 -29.05 -31.52 -35.51 -41.12 -44.56 -49.87 -59.91 -74.21 UPA826TF TYPICAL SCATTERING PARAMETERS (TA = 25°C) Q1 VCE = 3 V, IC = 3 mA, ZO = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.94 0.90 0.85 0.80 0.74 0.67 0.60 0.54 0.47 0.42 0.32 0.21 0.17 0.16 0.22 0.29 S21 ANG -9.29 -18.39 -27.47 -36.15 -44.62 -52.69 -60.71 -68.45 -75.60 -82.57 -96.78 -122.39 -143.90 179.12 136.13 115.80 MAG 6.55 6.32 6.21 5.98 5.77 5.51 5.28 5.03 4.76 4.50 4.02 3.42 3.10 2.70 2.24 1.89 S12 ANG 168.08 157.85 148.76 140.53 133.00 126.23 119.27 113.12 107.23 101.09 92.52 80.83 74.15 64.83 51.62 39.81 MAG 0.02 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.11 0.13 0.15 0.16 0.18 0.21 0.23 S22 ANG 84.10 76.93 71.79 66.81 63.60 60.13 58.07 55.93 54.62 53.45 51.59 49.61 48.63 46.70 43.76 40.27 MAG 0.98 0.95 0.91 0.86 0.81 0.76 0.72 0.68 0.64 0.61 0.56 0.50 0.46 0.42 0.36 0.31 ANG -6.91 -13.21 -18.80 -23.80 -27.41 -31.19 -33.67 -36.31 -38.10 -39.74 -42.63 -46.74 -49.50 -54.02 -63.34 -75.36 Q2 VCE = 3 V, IC = 3 mA, ZO = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.93 0.90 0.84 0.79 0.72 0.66 0.59 0.53 0.48 0.43 0.34 0.26 0.22 0.19 0.19 0.24 S21 ANG -9.39 -18.39 -27.39 -35.83 -44.06 -51.67 -58.86 -65.57 -71.57 -77.20 -87.82 -104.50 -116.75 -137.84 -174.18 159.82 MAG 6.76 6.46 6.32 6.06 5.82 5.54 5.28 5.01 4.72 4.45 3.95 3.37 3.06 2.71 2.29 1.99 S12 ANG 166.53 155.80 146.52 138.21 103.60 123.94 117.07 111.07 105.46 100.46 91.74 80.85 74.57 66.02 53.07 41.14 MAG 0.02 0.03 0.05 0.06 0.07 0.08 0.09 0.10 0.10 0.11 0.13 0.15 0.16 0.18 0.22 0.26 S22 ANG 82.60 76.86 71.65 67.47 64.58 61.95 60.46 59.12 57.98 57.39 56.54 55.21 54.46 53.01 49.89 45.56 MAG 0.98 0.94 0.89 0.83 0.77 0.72 0.68 0.64 0.60 0.57 0.52 0.46 0.43 0.38 0.30 0.22 ANG -7.24 -13.64 -18.91 -23.49 -26.46 -29.65 -31.43 -33.17 -34.36 -35.31 -37.08 -39.70 -41.65 -44.95 -52.82 -65.40 UPA826TF TYPICAL SCATTERING PARAMETERS (TA = 25°C) Q1 VCE = 3 V, IC = 10 mA, ZO = 50 Ω FREQUENCY S11 S21 S12 (GHz) MAG ANG MAG ANG MAG 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 0.82 0.72 0.60 0.49 0.40 0.33 0.27 0.22 0.18 0.15 0.10 0.07 0.08 0.13 0.21 0.29 -17.52 -33.22 -46.83 -57.62 -65.90 -72.93 -79.33 -85.38 -91.73 -98.81 -118.22 -176.19 149.79 125.94 109.57 100.79 16.52 14.93 13.32 11.65 10.15 8.90 7.89 7.07 6.39 5.83 4.95 4.05 3.61 3.12 2.54 2.14 159.99 144.21 131.03 120.45 112.22 105.92 100.37 95.73 91.61 87.88 81.32 72.82 67.81 60.46 49.58 39.46 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.08 0.09 0.10 0.11 0.14 0.15 0.18 0.22 0.25 ANG 156.05 139.27 125.80 115.64 108.02 102.30 97.45 93.31 89.63 86.38 80.51 72.79 68.12 61.31 50.55 40.11 MAG 0.02 0.03 0.04 0.05 0.06 0.07 0.07 0.08 0.09 0.10 0.12 0.15 0.16 0.19 0.24 0.28 S22 ANG MAG ANG 80.28 72.82 68.07 65.62 65.03 63.86 63.74 63.50 63.16 62.77 61.85 59.79 58.31 55.55 50.37 45.03 0.94 0.85 0.75 0.67 0.60 0.56 0.52 0.49 0.46 0.45 0.41 0.38 0.35 0.32 0.27 0.21 -12.68 -22.43 -28.43 -32.14 -34.25 -35.78 -36.80 -37.69 -38.46 -39.30 -41.01 -44.69 -47.69 -53.15 -65.07 -81.46 ANG 79.00 72.98 69.74 69.07 68.93 68.67 68.49 68.26 68.18 67.74 66.68 64.56 62.66 59.98 54.48 48.32 MAG 0.92 0.80 0.69 0.61 0.56 0.52 0.49 0.46 0.44 0.43 0.40 0.36 0.33 0.29 0.22 0.14 Q2 VCE = 3 V, IC = 10 mA, ZO = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.79 0.67 0.55 0.44 0.37 0.31 0.26 0.23 0.20 0.18 0.14 0.10 0.08 0.09 0.13 0.20 S21 ANG -18.18 -33.75 -46.32 -55.16 -61.11 -65.90 -69.64 -73.22 -76.64 -80.09 -88.42 -107.91 -126.27 -158.61 164.55 146.66 MAG 17.81 15.65 13.67 11.71 10.03 8.70 7.66 6.84 6.18 5.63 4.80 3.94 3.53 3.08 2.57 2.21 S12 S22 ANG -14.07 -22.91 -27.06 -28.96 -29.47 -29.62 -29.55 -29.57 -29.61 -29.60 -29.99 -31.58 -33.11 -35.72 -42.08 -51.14 ORDERING INFORMATION PART NUMBER UPA826TF-T1 QUANTITY 3000 PACKAGING Tape & Reel EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -2/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE