PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA838TF OUTLINE DIMENSIONS (Units in mm) • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm high • TWO DIFFERENT DIE TYPES: Q1 - Ideal oscillator transistor Q2 - Ideal buffer amplifier transistor Package Outline TS06 2.1 ± 0.1 1.25 ± 0.1 Q1 0.65 1 6 2 5 2.0 ± 0.2 +0.10 1.3 0.22 - 0.05 (All Leads) Q2 DESCRIPTION 3 The UPA838TF contains one NE688 and one NE687 NPN high frequency silicon bipolar chip. NEC's new low profile TF package is ideal for all portable wireless applications where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily configured for oscillator/buffer amplifier and other applications. 0.6 ± 0.1 4 0.45 0.13 ± 0.05 0 ~ 0.1 PIN CONNECTIONS 1. Collector (Q1) 4. Base (Q2) 2. Emitter (Q1) 5. Emitter (Q2) 3. Collector (Q2) 6. Base (Q1) Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE Q1 SYMBOLS UNITS ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA hFE DC Current Gain1 at VCE = 1 V, IC = 3 mA MIN TYP MAX 0.1 0.1 100 Gain Bandwidth (1) at VCE = 1 V, IC = 3 mA, f = 2 GHz GHz fT Gain Bandwidth (2) at VCE = 3 V, IC = 20 mA, f = 2 GHz GHz 9.0 Cre Feedback Capacitance2 at VCB = 1 V, IE = 0, f = 1 MHz pF 0.75 |S21E|2 Insertion Power Gain (1) at VCE = 1 V, IC =3 mA, f = 2 GHz dB |S21E|2 Insertion Power Gain (2) at VCE = 3 V, IC =20 mA, f = 2 GHz dB 6.5 NF Noise Figure (1) at VCE = 1 V, IC = 3 mA, f = 2 GHz dB 1.7 NF Noise Figure (2) at VCE = 3 V, IC = 7 mA, f = 2 GHz dB 1.5 ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 µA 0.1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.1 DC Current Gain1 at VCE = 2 V, IC = 20 mA 4.0 145 fT hFE Q2 PARAMETERS AND CONDITIONS UPA838TF TS06 2.5 4.5 3.5 70 Gain Bandwidth (1) at VCE = 2 V, IC = 20 mA, f = 2 GHz GHz 9 11 fT Gain Bandwidth (2) at VCE = 1 V, IC = 10 mA, f = 2 GHz GHz 7 9 Cre Feedback at VCB = 2 V, IE = 0, f = 1 MHz pF 2.5 140 fT Capacitance2 0.85 0.4 |S21E|2 Insertion Power Gain (1) at VCE = 2 V, IC =20 mA, f = 2 GHz dB 7 8.5 |S21E|2 Insertion Power Gain (2) at VCE = 1 V, IC =10 mA, f = 2 GHz dB 6 7.5 NF Noise Figure (1) at VCE = 2 V, IC = 3 mA, f = 2 GHz dB 1.3 2 NF Noise Figure (2) at VCE = 1 V, IC = 3 mA, f = 2 GHz dB 1.3 2 0.8 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter. California Eastern Laboratories UPA838TF ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS Q1 Q2 VCBO Collector to Base Voltage V 9 5 VCEO Collector to Emitter Voltage V 6 3 VEBO Emitter to Base Voltage V 2 2 30 IC Collector Current mA 100 PT Total Power Dissipation mW TJ Junction Temperature °C 110 110 200 150 150 TSTG Storage Temperature °C -65 to +150 ORDERING INFORMATION PART NUMBER UPA838TF-T1 QUANTITY 3000 PACKAGING Tape & Reel Note: 1. Operation in excess of any one of these parameters may result in permanent damage. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 2/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE