PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA839TF OUTLINE DIMENSIONS (Units in mm) • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm high • TWO DIFFERENT DIE TYPES: Q1 - Ideal oscillator transistor Q2 - Ideal buffer amplifier transistor Package Outline TS06 2.1 ± 0.1 1.25 ± 0.1 Q1 0.65 1 6 2 5 2.0 ± 0.2 +0.10 1.3 0.22 - 0.05 (All Leads) Q2 DESCRIPTION 3 The UPA839TF contains one NE680 and one NE856 NPN high frequency silicon bipolar chip. NEC's new low profile TF package is ideal for all portable wireless applications where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily configured for oscillator/buffer amplifier and other applications. 0.6 ± 0.1 4 0.45 0.13 ± 0.05 0 ~ 0.1 PIN CONNECTIONS 1. Collector (Q1) 4. Base (Q2) 2. Emitter (Q1) 5. Emitter (Q2) 3. Collector (Q2) 6. Base (Q1) Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right. ELECTRICAL CHARACTERISTICS (TA = 25°C) Q1 PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA hFE DC Current Gain1 at VCE = 3 V, IC = 5 mA fT Cre Gain Bandwidth at VCE = 3 V, IC = 5 mA GHz at VCB = 3 V, IE = 0, f = 1 MHz pF dB NF Noise Figure at VCE = 3 V, IC = 5 mA, f = 2 GHz dB ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA hFE DC Current Gain1 at VCE = 3 V, IC = 7 mA fT Feedback Capacitance2 UNITS Insertion Power Gain at VCE = 3 V, IC =5 mA, f = 2 GHz |S21E|2 Q2 UPA839TF TS06 Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz TYP GHz Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz |S21E|2 Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz dB Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz dB MAX 1.0 1.0 80 120 5.5 8.0 0.3 5.5 200 0.7 7.5 1.9 3.2 1.0 1.0 100 Cre NF MIN 3.0 pF 145 4.5 0.7 7 1.5 9 1.2 2.5 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter. California Eastern Laboratories UPA839TF ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS Q1 Q2 VCBO Collector to Base Voltage V 20 20 VCEO Collector to Emitter Voltage V 10 12 VEBO Emitter to Base Voltage V 1.5 3 100 IC Collector Current mA 35 PT Total Power Dissipation mW TJ Junction Temperature °C 110 110 200 150 150 TSTG Storage Temperature °C -65 to +150 ORDERING INFORMATION PART NUMBER UPA839TF-T1 QUANTITY 3000 PACKAGING Tape & Reel Note: 1. Operation in excess of any one of these parameters may result in permanent damage. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 2/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE