NEC UPA862TD

NEC's NPN SILICON RF
TWIN TRANSISTOR
FEATURES
OUTLINE DIMENSIONS
•
LOW VOLTAGE, LOW CURRENT OPERATION
•
SMALL PACKAGE OUTLINE:
1.0±0.05
0.8 +0.07
-0.05
LOW HEIGHT PROFILE:
E1
C2
Q1
6
B1
5
2
E2
3
Q2
4
B2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
0.125 +0.1
-0.05
0.5±0.05
DESCRIPTION
NEC's UPA862TD contains one NE851 and one NE685 NPN
high frequency silicon bipolar chip. The NE851 is an excellent
oscillator chip, featuring low 1/f noise and high immunity to
pushing effects. The NE685 is an excellent buffer transistor,
featuring low noise and high gain. NEC's new ultra small TD
package is ideal for all portable wireless applications where
reducing board space is a prime consideration. Each transistor
chip is independently mounted and easily configured for oscillator/buffer amplifier and other applications.
1
5
C1
4
IDEAL FOR 1-2 GHz OSCILLATORS
6
1
2
0.4
0.8
0.4
3
•
vY
Q1 - Ideal buffer amplifier transistor
Q2 - Ideal oscillator transistor
1.2 +0.07
-0.05
TWO DIFFERENT DIE TYPES:
0.15±0.05
(Top View)
Just 0.50 mm high
•
(Units in mm)
Package Outline TD
(TOP VIEW)
1.2 mm x 0.8 mm
•
UPA862TD
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
Q1
UNITS
MIN
TYP
MAX
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
nA
100
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
100
hFE
fT
DC Current
Gain1 at
VCE = 3 V, IC = 10 mA
Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz
GHz
75
110
10
12
7
8.5
150
Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz
pF
Insertion Power Gain at VCE = 3 V, IC =10 mA, f = 2 GHz
dB
NF
Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz
dB
ICBO
Collector Cutoff Current at VCB = 10 V, IE = 0
nA
600
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
600
hFE
DC Current Gain1 at VCE = 3 V, IC = 7 mA
Cre
|S21E|2
Q2
PARAMETERS AND CONDITIONS
UPA862TD
TD
fT
Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz
0.4
1.5
100
GHz
5.0
120
Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz
pF
|S21E|2
Insertion Power Gain at VCE = 1 V, IC =5 mA, f = 2 GHz
dB
3.0
4.0
dB
4.5
5.5
NF
Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz
dB
2.5
145
6.5
Cre
|S21|S21E|2E|2 Insertion Power GainIat VCE = 1 V, IC =15 mA, f = 2 GHz
0.7
0.6
1.9
0.8
2.5
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to
guard pin of capacitances meter.
California Eastern Laboratories
UPA862TD
ABSOLUTE MAXIMUM RATINGS1,2 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
Q1
Q2
VCBO
Collector to Base Voltage
V
9
9
VCEO
Collector to Emitter Voltage
V
6
5.5
VEBO
Emitter to Base Voltage
V
2
1.5
100
IC
Collector Current
mA
30
PT
Total Power Dissipation1
mW
180
192
210 Total
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
ORDERING INFORMATION
PART NUMBER
UPA862TD-T3
QUANTITY
10K Pcs./Reel
PACKAGING
Tape & Reel
150
Note: 1. Operation in excess of any one of these parameters may
result in permanent damage.
2. Mounted on 1.08cm2 x 1.0 mm(t) glass epoxy PCB
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Total Power Dissipation, Ptot (mW)
300
Mounted on Glass Epoxy PCB
(1.08 cm2 x 1.0 mm (t) )
250
2 Elements in total
210
200
190
180
150
Q2
Q1
100
50
0
25
50
75
100
125
150
Q1
Q2
REVERSE TRANSFR CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
REVERSE TRANSFR CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
1.0
0.5
Reverse Transfer Capacitance, Cre (pF)
Reverse Transfer Capacitance, Cre (pF)
Ambient Temperature, TA (°C)
f = 1 MHz
0.4
0.3
0.2
0.1
0
2
4
6
8
Collector to Base Voltage, VCB (V)
10
f = 1 MHz
0.8
0.6
0.4
0.2
0
2
4
6
8
Collector to Base Voltage, VCB (V)
10
UPA862TD
TYPICAL PERFORMANCE CURVES (TA = 25°C)
100
Q1
Q2
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
10
Collector Current, IC (mA)
Collector Current, IC (mA)
10
1
0.1
0.01
1
0.1
0.01
0.001
0.001
0.0001
0.4
100
0.5
0.6
0.7
0.8
0.9
0.0001
0.4
1.0
0.5
0.6
0.7
0.8
1.0
0.9
Base to Emitter Voltage, VBE (V)
Base to Emitter Voltage, VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
1
0.1
0.01
0.001
VCE = 2 V
10
Collector Current, IC (mA)
10
Collector Current, IC (mA)
VCE = 1 V
1
0.1
0.01
0.001
0.0001
0.4
0.5
0.6
0.7
0.8
1.0
0.9
0.0001
0.4
0.5
0.6
0.7
0.8
1.0
0.9
Base to Emitter Voltage, VBE (V)
Base to Emitter Voltage, VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
60
Collector Current, IC (mA)
Collector Current, IC (mA)
400 µa
360 µa
50
300 µa
30
270 µa
240 µa
240 µa
20
180 µa
150 µa
120 µa
10
90 µa
60 µa
320 µa
280 µa
40
240 µa
30
200 µa
160 µa
20
120 µa
80 µa
10
IB = 40 µa
IB = 30 µa
0
1
2
3
4
5
6
7
Collector to Emitter Voltage, VCE (V)
8
0
1
2
3
4
5
6
7
Collector to Emitter Voltage, VCE (V)
8
UPA862TD
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Q1
Q2
DC CURRENT GAIN
vs. COLLECTOR CURRENT
DC CURRENT GAIN
vs. COLLECTOR CURRENT
1000
1000
VCE = 1 V
DC Current Gain, HFE
DC Current Gain, HFE
VCE = 1 V
100
10
0.1
1
10
100
10
0.1
100
Collector Current, IC (mA)
1
10
Collector Current, IC (mA)
DC CURRENT GAIN
vs. COLLECTOR CURRENT
DC CURRENT GAIN
vs. COLLECTOR CURRENT
1000
1000
VCE = 2 V
DC Current Gain, HFE
DC Current Gain, HFE
VCE = 2 V
100
10
0.1
1
10
100
10
0.1
100
Collector Current, IC (mA)
10
100
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
VCE = 2 V
f = 2 GHz
Gain Bandwidth Product, fT (GHz)
Gain Bandwidth Product, fT (GHz)
1
Collector Current, IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
14
100
12
10
8
6
4
2
VCE = 2 V
f = 2 GHz
8
6
4
2
0
0
0.1
1
10
Collector Current, IC (mA)
100
1
10
Collector Current, IC (mA)
100
UPA862TD
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Q1
Q2
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
35
VCE = 1 V
IC = 10 mA
30
25
MSG
MAG
20
15
10
|S21e|2
5
0
0.1
1
VCE = 1 V
IC = 5 mA
30
25
MSG
20
MAG
15
10
5
|S21e|2
0
0.1
10
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
35
35
VCE = 2 V
IC = 10 mA
30
MSG
25
MAG
20
15
10
|S21e|2
5
0
0.1
1
VCE = 1 V
IC = 15 mA
30
25
MAG
15
10
5
|S21e|2
0
0.1
10
1
10
Frequency, f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
35
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
MSG
20
Frequency, f (GHz)
VCE = 3 V
IC = 10 mA
30
MSG
25
MAG
20
15
|S21e|2
5
0
0.1
10
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
10
1
Frequency, f (GHz)
Frequency, f (GHz)
1
Frequency, f (GHz)
10
VCE = 2 V
IC = 5 mA
30
25
MSG
20
MAG
15
10
5
|S21e|2
0
0.1
1
Frequency, f (GHz)
10
UPA862TD
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Q1
Q2
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
25
VCE = 1 V
f = 1 GHz
MSG
20
MAG
15
|S21e|2
10
5
0
1
10
|S21e|2
5
1
15
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
VCE = 1 V
f = 2 GHz
20
15 MSG
MAG
10
|S21e|2
5
MAG
10
|S21e|2
5
0
-5
100
VCE = 1 V
f = 2 GHz
1
Collector Current, IC (mA)
15
Insertion Power Gain,
(dB)
Maximum Available Gain, MAG(dB)
20
|S21e|2
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
VCE = 2 V
f = 2 GHz
MSG
MAG
|S21e|2
5
0
1
10
Collector Current, IC (mA)
100
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
25
10
10
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
15
100
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
25
10
10
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
1
MAG
10
Collector Current, IC (mA)
0
MSG
15
0
100
VCE = 1 V
f = 1 GHz
100
VCE = 2 V
f = 2 GHz
MAG
10
|S21e|2
5
0
-5
1
10
Collector Current, IC (mA)
100
UPA862TD
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Q1
Q2
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
20
10
6
18
VCE = 1 V
f = 1 GHz
6
12
4
8
2
4
NF
0
100
10
4
12
3
9
2
6
NF
1
10
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
6
20
6
12
Ga
4
8
2
4
NF
0
5
4
12
Ga
3
9
2
6
NF
1
3
0
0
100
10
15
1
0
100
10
Collector Current, IC (mA)
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10
6
20
Associated Gain, Ga (dB)
16
Noise Figure, NF (dB)
8
Associated Gain, Ga (dB)
18
VCE = 2 V
f = 2 GHz
16
6
Ga
4
12
8
2
NF
0
10
Collector Current, IC (mA)
4
0
100
5
Noise Figure, NF (dB)
8
Associated Gain, Ga (dB)
VCE = 2 V
f = 2 GHz
15
4
12
Ga
3
9
2
NF
1
6
3
0
1
10
Collector Current, IC (mA)
0
100
Associated Gain, Ga (dB)
Noise Figure, NF (dB)
18
VCE = 1 V
f = 2 GHz
VCE = 1 V
f = 2 GHz
Noise Figure, NF (dB)
0
100
10
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
1
3
0
Collector Current, IC (mA)
1
15
Ga
1
0
1
5
Associated Gain, Ga (dB)
16
Noise Figure, NF (dB)
Ga
8
Associated Gain, Ga (dB)
Noise Figure, NF (dB)
VCE = 1 V
f = 1 GHz
UPA862TD
TYPICAL SCATTERING PARAMETERS
+90°
j50
+120°
j25
+60°
j100
S21 = 10
+150°
S12 = .2
j10
0
10
25
50
+180°
100
+30°
+0°
S22 = 1
-j10
S11 = 1
-150°
Coordinates in Ohms
Frequency in GHz
VCE = 2.5 V, IC = 10 mA
-j100
-j25
-j50
GHz
S11
MAG
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
0.726
0.667
0.594
0.521
0.459
0.408
0.366
0.334
0.310
0.292
0.282
0.273
0.268
0.266
0.264
0.264
0.265
0.267
0.270
0.276
0.282
0.288
0.295
0.301
0.307
0.312
0.316
0.321
0.325
0.329
S21
ANG
- 18.1
- 37.4
- 53.3
- 66.9
- 78.6
- 89.0
- 98.3
-107.2
-115.8
-123.8
-131.2
-138.6
-145.2
-151.1
-156.7
-161.9
-166.7
-171.4
-175.6
-179.4
177.1
174.1
171.4
168.9
166.8
165.1
163.4
161.9
160.2
158.9
-120°
-60°
-90°
0.100 to 3.000GHz by 0.050
0.100 to 3.000GHz by 0.050
UPA82TD (Q1)
VCE = 2.5V, IC = 10 mA
Frequency
-30°
MAG
20.331
18.720
16.706
14.756
13.006
11.512
10.269
9.233
8.382
7.661
7.052
6.529
6.079
5.681
5.329
5.015
4.736
4.488
4.266
4.060
3.878
3.704
3.556
3.414
3.283
3.159
3.049
2.943
2.848
2.759
S12
ANG
161.8
148.4
136.9
127.5
120.0
113.9
108.8
104.4
100.7
97.4
94.4
91.7
89.2
86.8
84.6
82.5
80.5
78.7
76.8
75.0
73.3
71.6
70.0
68.5
66.9
65.5
64.1
62.7
61.3
60.0
MAG
0.013
0.024
0.033
0.040
0.045
0.050
0.055
0.060
0.064
0.068
0.073
0.077
0.082
0.086
0.091
0.095
0.100
0.104
0.109
0.113
0.118
0.122
0.127
0.131
0.136
0.140
0.144
0.148
0.153
0.157
S22
ANG
80.9
71.4
66.5
62.4
60.6
59.4
59.1
58.9
59.0
59.3
59.4
59.5
59.7
59.7
59.8
59.8
59.7
59.6
59.5
59.5
59.2
59.1
58.8
58.5
58.1
58.0
57.8
57.4
57.1
56.7
MAG
0.937
0.863
0.774
0.691
0.623
0.565
0.517
0.477
0.446
0.419
0.399
0.379
0.363
0.348
0.335
0.322
0.310
0.299
0.290
0.282
0.274
0.269
0.264
0.259
0.256
0.251
0.248
0.245
0.243
0.242
K
ANG
- 11.7
- 21.2
- 28.1
- 33.1
- 36.3
- 38.6
- 40.0
- 41.0
- 41.9
- 42.5
- 43.3
- 44.0
- 45.1
- 46.2
- 47.6
- 48.7
- 50.1
- 51.5
- 53.0
- 54.6
- 56.5
- 58.7
- 60.7
- 63.0
- 65.2
- 67.5
- 69.6
- 71.6
- 73.2
- 75.0
MAG1
(dB)
0.21
0.30
0.39
0.50
0.58
0.66
0.73
0.79
0.84
0.88
0.92
0.95
0.97
0.99
1.01
1.03
1.04
1.06
1.07
1.08
1.09
1.09
1.09
1.10
1.10
1.11
1.11
1.12
1.12
1.12
31.83
28.89
27.06
25.69
24.56
23.59
22.70
21.91
21.18
20.50
19.86
19.28
18.71
18.18
17.15
16.18
15.48
14.87
14.33
13.84
13.40
12.97
12.61
12.24
11.90
11.55
11.23
10.91
10.62
10.35
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
UPA862TD
TYPICAL SCATTERING PARAMETERS
+90°
j50
+120°
j25
+60°
j100
S21 = 10
+150°
S12 = .2
j10
0
10
25
50
100
+180°
+30°
+0°
S22 = 1
-j10
S11 = 1
-150°
Coordinates in Ohms
Frequency in GHz
VCE = 1 V, IC = 10 mA
-j100
-j25
-j50
-30°
-120°
0.100 to 3.000GHz by 0.050
UPA862TD (Q2)
VCE = 1 V, IC = 10 mA
Frequency
GHz
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
MAG
0.692
0.653
0.634
0.622
0.616
0.611
0.609
0.609
0.614
0.618
0.625
0.630
0.634
0.638
0.641
0.644
0.647
0.652
0.657
0.663
0.670
0.676
0.683
0.687
0.692
0.695
0.698
0.702
0.706
0.710
0.100 to 3.000GHz by 0.050
S11
S21
ANG
- 58.7
-100.9
-124.2
-139.2
-149.4
-157.1
-163.3
-168.2
-172.5
-176.2
-179.4
177.6
175.0
172.6
170.5
168.4
166.5
164.5
162.8
161.1
159.5
158.1
156.8
155.5
154.5
153.5
152.6
151.8
150.8
150.0
-60°
-90°
MAG
20.972
16.060
12.209
9.673
7.951
6.721
5.816
5.118
4.573
4.134
3.774
3.469
3.210
2.984
2.788
2.615
2.462
2.327
2.207
2.098
2.000
1.908
1.827
1.750
1.679
1.612
1.554
1.498
1.448
1.401
S12
ANG
144.3
123.6
111.1
102.9
96.9
92.2
88.1
84.6
81.4
78.5
75.7
73.1
70.5
68.1
65.8
63.6
61.4
59.3
57.3
55.3
53.4
51.4
49.6
47.8
46.1
44.5
42.9
41.4
40.0
38.6
MAG
0.028
0.041
0.048
0.053
0.056
0.059
0.063
0.067
0.070
0.074
0.078
0.083
0.088
0.092
0.097
0.102
0.107
0.112
0.118
0.123
0.129
0.134
0.140
0.146
0.152
0.158
0.165
0.171
0.178
0.184
S22
ANG
61.7
48.9
44.0
42.6
42.9
44.5
46.1
47.9
49.8
51.6
53.1
54.8
56.0
57.2
58.2
59.3
60.3
61.1
61.8
62.4
62.9
63.3
63.7
63.9
64.2
64.3
64.5
64.7
64.7
64.7
MAG
0.800
0.599
0.465
0.382
0.329
0.291
0.264
0.243
0.229
0.218
0.212
0.206
0.204
0.202
0.203
0.203
0.204
0.207
0.211
0.216
0.222
0.230
0.239
0.248
0.258
0.267
0.277
0.286
0.294
0.303
K
ANG
- 29.7
- 46.0
- 53.6
- 58.0
- 60.7
- 63.0
- 64.7
- 66.7
- 68.7
- 71.1
- 73.6
- 76.7
- 80.0
- 83.6
- 87.5
- 91.2
- 95.2
- 99.0
-102.7
-106.1
-109.6
-112.7
-115.9
-119.0
-121.9
-124.6
-127.2
-129.7
-131.9
-133.8
MAG1
(dB)
0.22
0.31
0.43
0.54
0.65
0.74
0.82
0.89
0.94
0.98
1.01
1.03
1.05
1.07
1.08
1.10
1.11
1.11
1.11
1.10
1.09
1.08
1.06
1.05
1.04
1.03
1.03
1.02
1.00
0.99
28.79
25.88
24.04
22.64
21.52
20.54
19.66
18.86
18.13
17.46
16.31
15.12
14.29
13.53
12.83
12.21
11.65
11.16
10.75
10.42
10.11
9.85
9.63
9.39
9.16
8.95
8.74
8.62
8.69
8.81
UPA862TD
UPA862TD NONLINEAR MODEL
BJT NONLINEAR MODEL PARAMETERS(1)
Parameters
Q1
NE685
Q2
NE851
Parameters
Q1
NE685
Q2
NE851
IS
7.0e-16
137e-18
MJC
0.34
0.14
BF
109
166
XCJC
0.5
0.5
NF
1
0.9871
CJS
0
0
VAF
15
20.4
VJS
0.75
0.75
IKF
0.19
50
MJS
0
0
ISE
7.90e-13
80.4e-15
FC
0.1
0.55
NE
2.19
2.4
TF
2.0e-12
18e-12
BR
1
28.7
XTF
6
0.1
NR
1.08
0.9889
VTF
3
2
VAR
12.4
2.7
ITF
0.005
0.03
IKR
infinity
0.021
PTF
0
0
ISC
0
532e-18
TR
1.0e-9
1.0e-9
NC
2
1.28
EG
1.11
1.11
RE
1.3
0.45
XTB
0
0
RB
5
4
XTI
3
3
RBM
3
1
KF (2)
0
0
IRB
0.005
0
AF (2)
1
1
RC
10
1.7
CJE
0.4e-12
2.4e-12
VJE
0.81
0.87
MJE
0.5
0.34
CJC
0.18e-12
0.65e-12
VJC
0.75
0.52
(1) Gummel-Poon Model
Q2
Q1
(2) AF and KF are 1/f noise parameters and are bias dependant.
The appropriate values for the 1/f noise parameters (AF and KF)
shall be chosen from the table below, according to the desired
current range.
IC = 5 mA
IC =10 mA
IC = 15 mA
KF
54.38e-12
997.6e-12
500.2e-12
AF
2.071
2.375
2.288
IC = 5 mA
IC =10 mA
IC = 15 mA
KF
4.547e-15
855e-12
1.73e-9
AF
1.4
2.551
2.626
For a better understanding on AF and KF parameters, please refer to AN1026.
MODEL RANGE
Frequency: 0.1 to 3.0 GHz
Bias:
VCE =0.5 V to 2.5 V, IC = 1 mA to 20 mA
Date:
08/03
UPA862TD
SCHEMATIC
0.1 pF
C_C1B2
0.03 pF
CCBPKG1
Pin_1
LC
LC1
0.07 pF
0.01 nH
1.2 nH
CCB1
C_C1E1
0.05 pF
Pin_2
CCE1
0.28 pF
LE
LE1
0.01 nH
0.6 nH
C_E1C2
0.05 pF
Q1
LB1
LB
1.1 nH
0.01 nH
C_E1B2
0.1 pF
LE2
CCE2
LC
LC2
0.01 nH
0.8 nH
CCB2
0.01 pF
C_B1B2
0.01 pF
LE
0.01 nH
0.5 nH
Pin_5
C_B2E2
0.01 pF
0.25 pF
Pin_3
Pin_6
Q2
LB2
0.6 nH
LB
0.01 nH
Pin_4
0.03 pF
CCEPKG2
0.1 pF
CCBPKG2
MODEL RANGE
Frequency: 0.1 to 3.0 GHz
Bias:
VCE = 0.5 V to 2.5 V, IC = 1 mA to 20 mA
Date:
08/03
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
08/04/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.