CEL NE685M13-T3-A

NEC's NPN SILICON TRANSISTOR NE685M13
OUTLINE DIMENSIONS (Units in mm)
FEATURES
PACKAGE OUTLINE M13
2
1
(Bottom View)
0.5+0.1
ñ0.05
0.3
3
0.2+0.1
ñ0.05
0.35
LOW NOISE FIGURE:
NF = 1.5 dB at 2 GHz
0.35
•
1.0+0.1
ñ0.05
HIGH GAIN BANDWIDTH PRODUCT:
fT = 12 GHz
0.7±0.05
Y2
•
0.15+0.1
ñ0.05
NEW MINIATURE M13 PACKAGE:
– Small transistor outline
– 1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
0.7
•
0.15+0.1
ñ0.05
DESCRIPTION
0.1
0.125+0.1
ñ0.05
0.1
0.5±0.05
NEC's NE685M13 transistor is designed for low noise, high
gain, and low cost requirements. This high fT part is well suited
for low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low profile/flat lead style "M13" package is ideal for today's
portable wireless applications. The NE685 is also available in
six different low cost plastic surface mount package styles.
0.2
0.2
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
NE685M13
2SC5617
M13
UNITS
fT
Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz
NF
Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz, ZS = ZOPT
dB
Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz
dB
|S21E|2
MIN
GHz
hFE2
Forward Current Gain at VCE = 3 V, IC = 10 mA
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
µA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
µA
CRE3
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
pF
TYP
12.0
1.5
7.0
3-155
2.5
11.0
75
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
MAX
140
0.1
0.1
0.4
0.7
NE685M13
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
PART NUMBER
QUANTITY
9.0
NE685M13-T3-A
3k pcs./reel
VCBO
Collector to Base Voltage
VCEO
Collector to Emitter Voltage
V
6.0
VEBO
Emitter to Base Voltage
V
2.0
V
Collector Current
mA
30
PT2
Total Power Dissipation
mW
140
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
IC
ORDERING INFORMATION
RATINGS
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. With device mounted on 1.08 cm2 X 1.2 mm thick glass epoxy
PCB.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Total Power Dissipation, Ptot (mW)
300
Reverse Transfer Capacitance, Cre (pF)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Mounted on Glass Epoxy PCB
2
(1.08 cm X 1.0 mm (t) )
250
200
150
140
100
50
0
25
50
75
100
125
150
REVERSE TRANSFER CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
0.6
f = 1 MHz
0.5
0.4
0.3
0.2
0.1
0
1
2
3
4
5
6
7
8
9
Ambient Temperature, TA (ºC)
Collector to Base Voltage, VCB (V)
COLLECTOR CURRENT VS.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT VS.
COLLECTOR TO EMITTER VOLTAGE
30
40
25
Collector Current, IC (mA)
Collector Current, IC (mA)
VCE = 3 V
20
15
10
5
0
0.2
0.4
0.6
0.8
1.0
20
180 µA
150 µA
120 µ A
90 µA
60 µA
10
0
Base to Emitter Voltage, TBE (V)
300 µA
270 µA
240 µA
210 µ A
30
2
4
IB = 30 µA
6
Collector to Emitter Voltage, VCE (V)
3-156
8
NE685M13
TYPICAL PERFORMANCE CURVES (TA = 25°C)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
16
1 000
Gain Bandwidth Product, fT (GHz)
100
10
0.1
1
10
10
8
6
4
2
10
100
Collector Current, IC (mA)
INSERTION POWER GAIN VS.
FREQUENCY
INSERTION POWER GAIN VS.
FREQUENCY
35
VCE = 1 V
IC = 10 mA
30
Insertion Power Gain |S21e|2, (dB)
Insertion Power Gain |S21e|2, (dB)
12
Collector Current, IC (mA)
35
25
20
15
10
5
0
0.1
1
VCE = 3 V
IC = 10 mA
30
25
20
15
10
5
0
0.1
10
1
10
Frequency, f (GHz)
Frequency, f (GHz)
INSERTION POWER GAIN, MAG, MSG VS.
COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG VS.
COLLECTOR CURRENT
20
Insertion Power Gain, IS21eI2
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
14
VCE = 3 V
f = 2 GHz
0
1
100
VCE = 1 V
f = 1 GHz
MSG
20
MAG
Insertion Power Gain, IS21eI2
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
DC Current Gain, hFE
VCE = 3 V
15
2
|S21e|
10
5
0
1
10
VCE = 3 V MSG
f = 1 GHz
15
Collector Current, IC (mA)
|S21e|2
10
5
0
1
100
MAG
10
Collector Current, IC (mA)
3-157
100
NE685M13
TYPICAL PERFORMANCE CURVES (TA = 25°C)
INSERTION POWER GAIN, MAG, MSG VS.
COLLECTOR CURRENT
20
MSG
MAG
10
|S21e|2
5
10
VCE = 3 V
f = 2 GHz
15
10
|S21e|2
5
0
1
100
MAG
MSG
10
100
Collector Current, IC (mA)
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN VS.
COLLECTOR CURRENT
5
20
VCE = 1 V
f = 1 GHz
16
4
Ga
NOISE FIGURE, ASSOCIATED GAIN VS.
COLLECTOR CURRENT
5
20
VCE = 3 V
Ga
f = 1 GHz
2
NF
4
1
0
1
8
10
Noise Figure NF, (dB)
12
3
4
16
3
12
8
2
NF
4
1
0
100
0
1
Collector Current, IC (mA)
10
Collector Current, IC (mA)
3-158
0
100
Associated Gain, Ga (dB)
15
0
1
Noise Figure NF, (dB)
Insertion Power Gain, IS21eI2
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
VCE = 1 V
f = 2 GHz
Associated Gain, Ga (dB)
Insertion Power Gain, IS21eI2
Maximum Available Gain, MAG (dB)
Maximum Stable Gain, MSG (dB)
INSERTION POWER GAIN, MAG, MSG VS.
COLLECTOR CURRENT
20
NE685M13
Ga
8
2
NF
4
1
0
1
10
VCE = 3 V
f = 2 GHz
16
4
Ga
3
2
NF
0
1
Collector Current, IC (mA)
10
Collector Current, IC (mA)
3-159
8
4
1
0
100
12
0
100
Associated Gain, Ga (dB)
12
3
NOISE FIGURE, ASSOCIATED GAIN VS.
COLLECTOR CURRENT
5
20
Noise Figure NF, (dB)
NOISE FIGURE, ASSOCIATED GAIN VS.
COLLECTOR CURRENT
5
20
VCE = 1 V
f = 2 GHz
16
4
Associated Gain, Ga (dB)
Noise Figure NF, (dB)
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE685M13
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
+90º
j50
j100
j25
+135º
+45º
j10
S11
0
10
25
S11
50
+180º
100
S21
2
4
6
8 10 12
+0º
S22
-j10
-135º
-j25
-45º
-j100
-90º
-j50
NE685M13
VC = 2 V, IC = 5 mA
FREQUENCY
S11
S21
S12
S22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
1.000
1.100
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
3.200
3.400
3.600
3.800
4.000
0.879
0.854
0.813
0.764
0.677
0.634
0.597
0.560
0.530
0.501
0.478
0.459
0.425
0.399
0.379
0.364
0.350
0.339
0.330
0.321
0.312
0.306
0.301
0.296
0.291
0.286
-11.18
-24.79
-36.17
-46.95
-58.07
-67.22
-75.01
-82.74
-89.38
-95.62
-101.10
-106.13
-114.91
-122.59
-129.37
-135.19
-140.57
-145.78
-150.79
-155.59
-160.44
-165.34
-170.19
-175.11
-179.68
176.05
10.895
10.531
9.980
9.356
8.645
7.952
7.355
6.818
6.315
5.872
5.483
5.137
4.543
4.068
3.678
3.369
3.103
2.882
2.695
2.529
2.386
2.263
2.150
2.048
1.957
1.874
169.79
159.27
150.16
142.00
133.16
127.18
122.04
117.17
113.03
109.14
105.72
102.65
97.14
92.39
88.20
84.36
80.91
77.59
74.45
71.46
68.56
65.81
63.12
60.52
58.06
55.66
0.017
0.033
0.047
0.059
0.069
0.077
0.083
0.089
0.095
0.099
0.104
0.108
0.116
0.123
0.131
0.138
0.146
0.154
0.162
0.170
0.178
0.186
0.194
0.202
0.210
0.218
85.46
76.47
70.32
65.55
59.99
57.31
55.43
53.53
52.58
51.55
50.81
50.49
50.07
50.09
50.25
50.70
51.06
51.17
51.40
51.61
51.67
51.55
51.53
51.43
51.16
51.06
0.980
0.943
0.894
0.843
0.756
0.701
0.657
0.615
0.579
0.542
0.515
0.491
0.451
0.417
0.394
0.377
0.362
0.351
0.343
0.335
0.328
0.324
0.323
0.323
0.327
0.332
-8.26
-15.79
-22.51
-28.26
-32.30
-35.05
-38.07
-40.74
-42.38
-44.09
-45.60
-47.11
-49.16
-50.64
-52.06
-53.48
-55.00
-56.70
-58.44
-60.35
-62.49
-65.12
-67.74
-70.53
-73.25
-75.87
K
MAG1
0.05
0.13
0.19
0.24
0.37
0.43
0.47
0.51
0.56
0.61
0.65
0.68
0.76
0.82
0.88
0.92
0.96
0.99
1.02
1.04
1.06
1.08
1.09
1.10
1.10
1.11
27.96
25.05
23.25
21.98
21.00
20.16
19.46
18.82
18.24
17.73
17.22
16.79
15.94
15.18
14.49
13.87
13.27
12.73
11.43
10.49
9.75
9.16
8.63
8.14
7.72
7.33
(dB)
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
3-160
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE685M13
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
+90º
j50
j100
j25
+135º
+45º
j10
S11
0
10
25
S12
S21
100
50
5
+180º
10
15
20
+0º
S22
-j10
-135º
-j25
-45º
-j100
-90º
-j50
NE685M13
VC = 3 V, IC = 10 mA
FREQUENCY
S11
S21
S12
S22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
1.000
1.100
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
3.200
3.400
3.600
3.800
4.000
0.830
0.791
0.734
0.675
0.584
0.541
0.506
0.473
0.448
0.423
0.405
0.390
0.364
0.344
0.329
0.318
0.308
0.300
0.294
0.287
0.282
0.277
0.273
0.270
0.266
0.263
-14.89
-30.25
-43.35
-55.24
-67.02
-76.48
-84.40
-92.17
-98.62
-104.84
-110.11
-114.95
-123.47
-130.71
-137.11
-142.56
-147.52
-152.37
-157.24
-161.72
-166.38
-170.99
-175.85
179.25
174.83
170.53
15.406
14.529
13.385
12.178
10.911
9.839
8.943
8.163
7.477
6.891
6.385
5.947
5.216
4.640
4.179
3.809
3.499
3.242
3.024
2.834
2.670
2.526
2.397
2.282
2.179
2.084
167.04
155.17
144.88
136.08
127.43
121.58
116.65
112.19
108.45
104.94
101.90
99.15
94.22
90.04
86.28
82.88
79.73
76.73
73.87
71.13
68.47
65.91
63.40
60.99
58.67
56.42
0.015
0.029
0.041
0.050
0.058
0.064
0.069
0.075
0.079
0.083
0.088
0.092
0.100
0.109
0.117
0.126
0.135
0.144
0.153
0.162
0.171
0.180
0.189
0.197
0.207
0.215
79.15
74.31
68.95
64.19
59.86
57.87
56.90
55.96
55.53
55.34
55.24
55.23
55.77
56.13
56.73
57.15
57.35
57.60
57.62
57.53
57.39
57.27
56.83
56.62
56.19
55.67
0.969
0.918
0.852
0.786
0.690
0.631
0.586
0.546
0.513
0.478
0.455
0.435
0.401
0.373
0.355
0.341
0.330
0.322
0.316
0.310
0.304
0.302
0.301
0.302
0.306
0.311
-9.82
-18.40
-25.66
-31.42
-34.94
-37.08
-39.46
-41.46
-42.47
-43.52
-44.52
-45.57
-46.75
-47.51
-48.39
-49.39
-50.56
-51.97
-53.62
-55.48
-57.60
-60.04
-62.78
-65.63
-68.43
-71.13
K
MAG1
0.15
0.18
0.25
0.32
0.46
0.52
0.57
0.62
0.66
0.71
0.75
0.78
0.85
0.90
0.94
0.97
1.00
1.02
1.03
1.05
1.06
1.07
1.07
1.08
1.08
1.08
30.06
26.96
25.11
23.86
22.75
21.86
21.10
20.39
19.74
19.17
18.61
18.09
17.16
16.29
15.52
14.81
14.15
12.70
11.86
11.10
10.45
9.89
9.38
8.91
8.51
8.11
(dB)
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
3-161
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE685M13
NE685M13 NONLINEAR MODEL
BJT NONLINEAR MODEL PARAMETERS (1)
Parameters
Q1
Parameters
SCHEMATIC
Q1
Q1
CCBPKG
IS
7e-16
MJC
0.34
BF
109
XCJC
0.7
NF
1
CJS
0
VAF
15
VJS
0.75
IKF
0.19
MJS
0
ISE
7.9e-13
FC
0.5
NE
2.19
TF
2.5e-12
BR
1
XTF
5.2
NR
1.08
VTF
4.58
VAR
12.4
ITF
0.011
IKR
0
PTF
0
ISC
0
TR
1e-9
NC
2
EG
1.11
RE
1.3
XTB
0
RB
10
XTI
3
RBM
8.34
KF
0
IRB
0.009
AF
1
RC
10
CJE
0.4e-12
VJE
0.812
MJE
0.5
CJC
0.18e-12
VJC
0.75
CCB
LCX
LBX
Collector
LB
Base
CCE
CCEPKG
LE
LEX
Emitter
ADDITIONAL PARAMETERS
Parameters
(1) Gummel-Poon Model
68533
CCB
0.1e-12
CCE
0.14e-12
LB
0.35e-9
LE
0.4e-9
CCBPKG
0.05e-12
CCEPKG
0.05e-12
LBX
0.05e-9
LCX
0.05e-9
LEX
0.05e-9
UNITS
Parameter
Units
time
MODEL RANGE
Frequency: 0.1 to 4.0 GHz
Bias:
VCE = 0.5 V to 3 V, IC = 0.5 mA to 20 mA
Date:
09/02
seconds (S)
capacitance
farads (F)
inductance
henries (H)
resistance
ohms (Ω)
voltage
volts (V)
current
amps (A)
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
Internet: http://WWW.CEL.COM
03/18/2002
DATA SUBJECT TO CHANGE WITHOUT NOTICE
3-162
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.
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