NEC's NPN SILICON TRANSISTOR NE685M13 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 0.35 LOW NOISE FIGURE: NF = 1.5 dB at 2 GHz 0.35 • 1.0+0.1 ñ0.05 HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz 0.7±0.05 Y2 • 0.15+0.1 ñ0.05 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance 0.7 • 0.15+0.1 ñ0.05 DESCRIPTION 0.1 0.125+0.1 ñ0.05 0.1 0.5±0.05 NEC's NE685M13 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for low voltage/low current designs for portable wireless communications and cellular radio applications. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. The NE685 is also available in six different low cost plastic surface mount package styles. 0.2 0.2 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS NE685M13 2SC5617 M13 UNITS fT Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz NF Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz, ZS = ZOPT dB Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz dB |S21E|2 MIN GHz hFE2 Forward Current Gain at VCE = 3 V, IC = 10 mA ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA CRE3 Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz pF TYP 12.0 1.5 7.0 3-155 2.5 11.0 75 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. MAX 140 0.1 0.1 0.4 0.7 NE685M13 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS PART NUMBER QUANTITY 9.0 NE685M13-T3-A 3k pcs./reel VCBO Collector to Base Voltage VCEO Collector to Emitter Voltage V 6.0 VEBO Emitter to Base Voltage V 2.0 V Collector Current mA 30 PT2 Total Power Dissipation mW 140 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 IC ORDERING INFORMATION RATINGS Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. With device mounted on 1.08 cm2 X 1.2 mm thick glass epoxy PCB. TYPICAL PERFORMANCE CURVES (TA = 25°C) Total Power Dissipation, Ptot (mW) 300 Reverse Transfer Capacitance, Cre (pF) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on Glass Epoxy PCB 2 (1.08 cm X 1.0 mm (t) ) 250 200 150 140 100 50 0 25 50 75 100 125 150 REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.6 f = 1 MHz 0.5 0.4 0.3 0.2 0.1 0 1 2 3 4 5 6 7 8 9 Ambient Temperature, TA (ºC) Collector to Base Voltage, VCB (V) COLLECTOR CURRENT VS. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT VS. COLLECTOR TO EMITTER VOLTAGE 30 40 25 Collector Current, IC (mA) Collector Current, IC (mA) VCE = 3 V 20 15 10 5 0 0.2 0.4 0.6 0.8 1.0 20 180 µA 150 µA 120 µ A 90 µA 60 µA 10 0 Base to Emitter Voltage, TBE (V) 300 µA 270 µA 240 µA 210 µ A 30 2 4 IB = 30 µA 6 Collector to Emitter Voltage, VCE (V) 3-156 8 NE685M13 TYPICAL PERFORMANCE CURVES (TA = 25°C) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 16 1 000 Gain Bandwidth Product, fT (GHz) 100 10 0.1 1 10 10 8 6 4 2 10 100 Collector Current, IC (mA) INSERTION POWER GAIN VS. FREQUENCY INSERTION POWER GAIN VS. FREQUENCY 35 VCE = 1 V IC = 10 mA 30 Insertion Power Gain |S21e|2, (dB) Insertion Power Gain |S21e|2, (dB) 12 Collector Current, IC (mA) 35 25 20 15 10 5 0 0.1 1 VCE = 3 V IC = 10 mA 30 25 20 15 10 5 0 0.1 10 1 10 Frequency, f (GHz) Frequency, f (GHz) INSERTION POWER GAIN, MAG, MSG VS. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG VS. COLLECTOR CURRENT 20 Insertion Power Gain, IS21eI2 Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB) 14 VCE = 3 V f = 2 GHz 0 1 100 VCE = 1 V f = 1 GHz MSG 20 MAG Insertion Power Gain, IS21eI2 Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB) DC Current Gain, hFE VCE = 3 V 15 2 |S21e| 10 5 0 1 10 VCE = 3 V MSG f = 1 GHz 15 Collector Current, IC (mA) |S21e|2 10 5 0 1 100 MAG 10 Collector Current, IC (mA) 3-157 100 NE685M13 TYPICAL PERFORMANCE CURVES (TA = 25°C) INSERTION POWER GAIN, MAG, MSG VS. COLLECTOR CURRENT 20 MSG MAG 10 |S21e|2 5 10 VCE = 3 V f = 2 GHz 15 10 |S21e|2 5 0 1 100 MAG MSG 10 100 Collector Current, IC (mA) Collector Current, IC (mA) NOISE FIGURE, ASSOCIATED GAIN VS. COLLECTOR CURRENT 5 20 VCE = 1 V f = 1 GHz 16 4 Ga NOISE FIGURE, ASSOCIATED GAIN VS. COLLECTOR CURRENT 5 20 VCE = 3 V Ga f = 1 GHz 2 NF 4 1 0 1 8 10 Noise Figure NF, (dB) 12 3 4 16 3 12 8 2 NF 4 1 0 100 0 1 Collector Current, IC (mA) 10 Collector Current, IC (mA) 3-158 0 100 Associated Gain, Ga (dB) 15 0 1 Noise Figure NF, (dB) Insertion Power Gain, IS21eI2 Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB) VCE = 1 V f = 2 GHz Associated Gain, Ga (dB) Insertion Power Gain, IS21eI2 Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB) INSERTION POWER GAIN, MAG, MSG VS. COLLECTOR CURRENT 20 NE685M13 Ga 8 2 NF 4 1 0 1 10 VCE = 3 V f = 2 GHz 16 4 Ga 3 2 NF 0 1 Collector Current, IC (mA) 10 Collector Current, IC (mA) 3-159 8 4 1 0 100 12 0 100 Associated Gain, Ga (dB) 12 3 NOISE FIGURE, ASSOCIATED GAIN VS. COLLECTOR CURRENT 5 20 Noise Figure NF, (dB) NOISE FIGURE, ASSOCIATED GAIN VS. COLLECTOR CURRENT 5 20 VCE = 1 V f = 2 GHz 16 4 Associated Gain, Ga (dB) Noise Figure NF, (dB) TYPICAL PERFORMANCE CURVES (TA = 25°C) NE685M13 TYPICAL SCATTERING PARAMETERS (TA = 25°C) +90º j50 j100 j25 +135º +45º j10 S11 0 10 25 S11 50 +180º 100 S21 2 4 6 8 10 12 +0º S22 -j10 -135º -j25 -45º -j100 -90º -j50 NE685M13 VC = 2 V, IC = 5 mA FREQUENCY S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.100 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 3.200 3.400 3.600 3.800 4.000 0.879 0.854 0.813 0.764 0.677 0.634 0.597 0.560 0.530 0.501 0.478 0.459 0.425 0.399 0.379 0.364 0.350 0.339 0.330 0.321 0.312 0.306 0.301 0.296 0.291 0.286 -11.18 -24.79 -36.17 -46.95 -58.07 -67.22 -75.01 -82.74 -89.38 -95.62 -101.10 -106.13 -114.91 -122.59 -129.37 -135.19 -140.57 -145.78 -150.79 -155.59 -160.44 -165.34 -170.19 -175.11 -179.68 176.05 10.895 10.531 9.980 9.356 8.645 7.952 7.355 6.818 6.315 5.872 5.483 5.137 4.543 4.068 3.678 3.369 3.103 2.882 2.695 2.529 2.386 2.263 2.150 2.048 1.957 1.874 169.79 159.27 150.16 142.00 133.16 127.18 122.04 117.17 113.03 109.14 105.72 102.65 97.14 92.39 88.20 84.36 80.91 77.59 74.45 71.46 68.56 65.81 63.12 60.52 58.06 55.66 0.017 0.033 0.047 0.059 0.069 0.077 0.083 0.089 0.095 0.099 0.104 0.108 0.116 0.123 0.131 0.138 0.146 0.154 0.162 0.170 0.178 0.186 0.194 0.202 0.210 0.218 85.46 76.47 70.32 65.55 59.99 57.31 55.43 53.53 52.58 51.55 50.81 50.49 50.07 50.09 50.25 50.70 51.06 51.17 51.40 51.61 51.67 51.55 51.53 51.43 51.16 51.06 0.980 0.943 0.894 0.843 0.756 0.701 0.657 0.615 0.579 0.542 0.515 0.491 0.451 0.417 0.394 0.377 0.362 0.351 0.343 0.335 0.328 0.324 0.323 0.323 0.327 0.332 -8.26 -15.79 -22.51 -28.26 -32.30 -35.05 -38.07 -40.74 -42.38 -44.09 -45.60 -47.11 -49.16 -50.64 -52.06 -53.48 -55.00 -56.70 -58.44 -60.35 -62.49 -65.12 -67.74 -70.53 -73.25 -75.87 K MAG1 0.05 0.13 0.19 0.24 0.37 0.43 0.47 0.51 0.56 0.61 0.65 0.68 0.76 0.82 0.88 0.92 0.96 0.99 1.02 1.04 1.06 1.08 1.09 1.10 1.10 1.11 27.96 25.05 23.25 21.98 21.00 20.16 19.46 18.82 18.24 17.73 17.22 16.79 15.94 15.18 14.49 13.87 13.27 12.73 11.43 10.49 9.75 9.16 8.63 8.14 7.72 7.33 (dB) Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 3-160 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE685M13 TYPICAL SCATTERING PARAMETERS (TA = 25°C) +90º j50 j100 j25 +135º +45º j10 S11 0 10 25 S12 S21 100 50 5 +180º 10 15 20 +0º S22 -j10 -135º -j25 -45º -j100 -90º -j50 NE685M13 VC = 3 V, IC = 10 mA FREQUENCY S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.100 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 3.200 3.400 3.600 3.800 4.000 0.830 0.791 0.734 0.675 0.584 0.541 0.506 0.473 0.448 0.423 0.405 0.390 0.364 0.344 0.329 0.318 0.308 0.300 0.294 0.287 0.282 0.277 0.273 0.270 0.266 0.263 -14.89 -30.25 -43.35 -55.24 -67.02 -76.48 -84.40 -92.17 -98.62 -104.84 -110.11 -114.95 -123.47 -130.71 -137.11 -142.56 -147.52 -152.37 -157.24 -161.72 -166.38 -170.99 -175.85 179.25 174.83 170.53 15.406 14.529 13.385 12.178 10.911 9.839 8.943 8.163 7.477 6.891 6.385 5.947 5.216 4.640 4.179 3.809 3.499 3.242 3.024 2.834 2.670 2.526 2.397 2.282 2.179 2.084 167.04 155.17 144.88 136.08 127.43 121.58 116.65 112.19 108.45 104.94 101.90 99.15 94.22 90.04 86.28 82.88 79.73 76.73 73.87 71.13 68.47 65.91 63.40 60.99 58.67 56.42 0.015 0.029 0.041 0.050 0.058 0.064 0.069 0.075 0.079 0.083 0.088 0.092 0.100 0.109 0.117 0.126 0.135 0.144 0.153 0.162 0.171 0.180 0.189 0.197 0.207 0.215 79.15 74.31 68.95 64.19 59.86 57.87 56.90 55.96 55.53 55.34 55.24 55.23 55.77 56.13 56.73 57.15 57.35 57.60 57.62 57.53 57.39 57.27 56.83 56.62 56.19 55.67 0.969 0.918 0.852 0.786 0.690 0.631 0.586 0.546 0.513 0.478 0.455 0.435 0.401 0.373 0.355 0.341 0.330 0.322 0.316 0.310 0.304 0.302 0.301 0.302 0.306 0.311 -9.82 -18.40 -25.66 -31.42 -34.94 -37.08 -39.46 -41.46 -42.47 -43.52 -44.52 -45.57 -46.75 -47.51 -48.39 -49.39 -50.56 -51.97 -53.62 -55.48 -57.60 -60.04 -62.78 -65.63 -68.43 -71.13 K MAG1 0.15 0.18 0.25 0.32 0.46 0.52 0.57 0.62 0.66 0.71 0.75 0.78 0.85 0.90 0.94 0.97 1.00 1.02 1.03 1.05 1.06 1.07 1.07 1.08 1.08 1.08 30.06 26.96 25.11 23.86 22.75 21.86 21.10 20.39 19.74 19.17 18.61 18.09 17.16 16.29 15.52 14.81 14.15 12.70 11.86 11.10 10.45 9.89 9.38 8.91 8.51 8.11 (dB) Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 3-161 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE685M13 NE685M13 NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters SCHEMATIC Q1 Q1 CCBPKG IS 7e-16 MJC 0.34 BF 109 XCJC 0.7 NF 1 CJS 0 VAF 15 VJS 0.75 IKF 0.19 MJS 0 ISE 7.9e-13 FC 0.5 NE 2.19 TF 2.5e-12 BR 1 XTF 5.2 NR 1.08 VTF 4.58 VAR 12.4 ITF 0.011 IKR 0 PTF 0 ISC 0 TR 1e-9 NC 2 EG 1.11 RE 1.3 XTB 0 RB 10 XTI 3 RBM 8.34 KF 0 IRB 0.009 AF 1 RC 10 CJE 0.4e-12 VJE 0.812 MJE 0.5 CJC 0.18e-12 VJC 0.75 CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter ADDITIONAL PARAMETERS Parameters (1) Gummel-Poon Model 68533 CCB 0.1e-12 CCE 0.14e-12 LB 0.35e-9 LE 0.4e-9 CCBPKG 0.05e-12 CCEPKG 0.05e-12 LBX 0.05e-9 LCX 0.05e-9 LEX 0.05e-9 UNITS Parameter Units time MODEL RANGE Frequency: 0.1 to 4.0 GHz Bias: VCE = 0.5 V to 3 V, IC = 0.5 mA to 20 mA Date: 09/02 seconds (S) capacitance farads (F) inductance henries (H) resistance ohms (Ω) voltage volts (V) current amps (A) Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 Internet: http://WWW.CEL.COM 03/18/2002 DATA SUBJECT TO CHANGE WITHOUT NOTICE 3-162 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. 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