CEL NESG2101M05

NEC's NPN SiGe
NESG2101M05
HIGH FREQUENCY TRANSISTOR
FEATURES
•
HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
VCEO = 5 V (Absolute Maximum)
•
HIGH OUTPUT POWER:
P1dB = 21 dBm at 2 GHz
•
LOW NOISE FIGURE:
NF = 0.9 dB at 2 GHz
•
HIGH MAXIMUM STABLE POWER GAIN:
MSG = 17 dB at 2 GHz
•
LOW PROFILE M05 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
M05
DESCRIPTION
NEC's NESG2101M05 is fabricated using NECʼs high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifiers,
medium power amplifiers, and oscillators
NECʼs low profile, flat lead style M05 Package provides high
frequency performance for compact wireless designs.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
RF
P1dB
Output Power at 1 dB Compression Point
VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz
MIN
dBm
TYP
Linear Gain, VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz
dB
15
Noise Figure at VCE = 2 V, IC = 10 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
dB
0.9
Ga
Associated Gain at VCE = 2 V, IC = 10 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
dB
NF
Noise Figure at VCE = 2 V, IC = 7mA, f = 1 GHz,
ZS = ZSOPT, ZL = ZLOPT
dB
0.6
Ga
Associated Gain at VCE = 2 V, IC = 7 mA, f = 1 GHz,
ZS = ZSOPT, ZL = ZLOPT
dB
19.0
11.0
Maximum Stable Gain1 at VCE = 3 V, IC = 50 mA, f = 2 GHz
dB
14.5
17.0
|S21E|
Insertion Power Gain at VCE = 3 V, IC = 50 mA, f = 2 GHz
dB
11.5
13.5
GHz
14
Gain Bandwidth Product at VCE = 3 V, IC = 50 mA, f = 2 GHz
Reverse Transfer Capacitance2 at VCB = 2 V, IC = 0 mA, f = 1 MHz
pF
ICBO
Collector Cutoff Current at VCB = 5V, IE = 0
nA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
hFE
DC Current Gain3 at VCE = 2 V, IC = 15 mA
1.2
13.0
MSG
Cre
MAX
21
GL
fT
DC
UNITS
NF
2
Notes:
PARAMETERS AND CONDITIONS
NESG2101M05
M05
17
0.4
0.5
100
100
130
190
260
1. MSG = S21
S12
2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to
the guard pin.
3. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
California Eastern Laboratories
NESG2101M05
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
13.0
VCEO
Collector to Emitter Voltage
V
5.0
VEBO
Emitter to Base Voltage
V
1.5
Collector Current
mA
100
PT2
IC
Total Power Dissipation
mW
500
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
THERMAL RESISTANCE
SYMBOLS
PARAMETERS
UNITS
RATINGS
Rth j-c
Junction to Case Resistance
°C/W
TBD
ORDERING INFORMATION
PART NUMBER
QUANTITY
NESG2101M05-T1-A
SUPPLYING FORM
3 kpcs/reel
• Pin 3 (Collector), Pin 4
(Emitter) face the perforation side of the tape
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 38 x 38 x 0.4 mm (t) glass epoxy substrate
• 8 mm wide embossed
taping
TYPICAL PERFORMANCE CURVES (TA = 25°C)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Mounted on Polymide PCB
(38 × 38 mm, t = 0.4 mm)
600
500
400
300
200
100
0
25
50
75
100
125
1.0
Reverse Transfer Capacitance, Cre (pF)
Total Power Dissipation, Ptot (mW)
700
0.8
0.6
0.4
0.2
0
150
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
Collector Current, Ic (mA)
Collector Current, Ic (mA)
4
6
8
10
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
10
1
0.1
0.01
0.001
0.0001
0.4
2
Collector to Base Voltage, VCB (V)
Ambient Temperature, TA (°C)
100
f = 1 MHz
VCE = 2 V
10
1
0.1
0.01
0.001
0.5
0.6
0.7
0.8
0.9
Base to Emitter Voltage, VBE (V)
1.0
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
Base to Emitter Voltage, VBE (V)
1.0
NESG2101M05
TYPICAL PERFORMANCE CURVES (TA = 25°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 3 V
10
1
0.1
0.01
1
0.1
0.01
0.001
0.001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VCE = 4 V
10
Collector Current, Ic (mA)
Collector Current, Ic (mA)
100
0.0001
0.4
0.5
0.6
0.7
0.8
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
100
VCE = 1 V
500 µ A
80
450 µ A
70
400 µ A
60
350 µ A
50
300 µ A
250 µ A
40
200 µ A
30
150 µ A
20
100 µ A
10
IB = 50 µ A
1
2
3
4
10
0.1
6
5
100
1
10
100
Collector to Emitter Voltage, VCE (V)
Collector Current, lC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
1 000
VCE = 2 V
DC Current Gain, hFE
DC Current Gain, hFE
DC Current Gain, hFE
Collector Current, Ic (mA)
90
100
10
0.1
1.0
Base to Emitter Voltage, VBE (V)
Base to Emitter Voltage, VBE (V)
0
0.9
1
10
Collector Current, lC (mA)
100
VCE = 3 V
100
10
0.1
1
10
Collector Current, lC (mA)
100
NESG2101M05
TYPICAL PERFORMANCE CURVES (TA = 25°C)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 4 V
100
10
0.1
1
10
20
Gain Bandwidth Product, fT (GHz)
DC Current Gain, hFE
1 000
15
10
5
0
100
Collector Current, lC (mA)
VCE = 1 V
f = 2 GHz
1
10
Collector Current, lC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
20
VCE = 2 V
f = 2 GHz
Gain Bandwidth Product, fT (GHz)
Gain Bandwidth Product, fT (GHz)
20
15
10
5
0
1
10
15
10
5
0
100
VCE = 3 V
f = 2 GHz
1
Insertion Power Gain, IS21eI2 (dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
Gain Bandwidth Product, fT (GHz)
VCE = 4 V
f = 2 GHz
15
10
5
1
10
Collector Current, lC (mA)
100
INSERTION POWER GAIN, MAG, MSG
vs. FREQUENCY
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
0
10
Collector Current, lC (mA)
Collector Current, lC (mA)
20
100
100
40
VCE = 1 V
IC = 50 mA
35
MSG
30
MAG
25
20
15
2
|S21e|
10
5
0
0.1
1
10
Frequency, f (GHz)
100
NESG2101M05
TYPICAL PERFORMANCE CURVES (TA = 25°C)
INSERTION POWER GAIN, MAG,
MSG vs. FREQUENCY
Insertion Power Gain, IS21eI2 (dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
40
VCE = 2 V
IC = 50 mA
35
MSG
30
MAG
25
20
15
2
|S21e|
10
5
0
0.1
1
10
100
40
VCE = 3 V
IC = 50 mA
35
MSG
30
MAG
25
20
15
2
|S21e|
10
5
0
0.1
1
10
100
Frequency, f (GHz)
Frequency, f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. FREQUENCY
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain, IS21eI2 (dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
40
VCE = 4 V
IC = 50 mA
35
MSG
30
MAG
25
20
15
2
|S21e|
10
5
0
0.1
1
10
30
VCE = 1 V
f = 1 GHz
MAG
25
MSG
20
15
2
|S21e|
10
5
0
1
100
10
100
Frequency, f (GHz)
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 2 V
f = 1 GHz
MAG
MSG
25
20
2
|S21e|
15
10
5
0
1
10
Collector Current, IC (mA)
100
Insertion Power Gain, IS21eI2 (dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
Insertion Power Gain, IS21eI2 (dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
Insertion Power Gain, IS21eI2 (dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
Insertion Power Gain, IS21eI2 (dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. FREQUENCY
30
VCE = 1 V
f = 2 GHz
25
20
MSG
MAG
15
10
2
|S21e|
5
0
1
10
Collector Current, IC (mA)
100
NESG2101M05
TYPICAL PERFORMANCE CURVES (TA = 25°C)
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
30
Insertion Power Gain, IS21eI2 (dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
Insertion Power Gain, IS21eI2 (dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
VCE = 2 V
f = 2 GHz
25
20
MSG
MAG
15
10
2
|S21e|
5
0
1
VCE = 1 V
f = 3 GHz
15
MSG
MAG
10
2
5
|S21e|
0
-5
-10
1
100
10
20
10
Collector Current, IC (mA)
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
Insertion Power Gain, IS21eI2 (dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
Insertion Power Gain, IS21eI2 (dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
20
VCE = 2 V
f = 3 GHz
15 MSG
MAG
10
2
|S21e|
5
0
-5
-10
1
VCE = 3 V
f = 1 GHz
20
2
|S21e|
15
10
5
0
100
10
1
20
2
|S21e|
10
5
0
1
10
Collector Current, IC (mA)
100
Insertion Power Gain, IS21eI2 (dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
MAG
MSG
15
100
OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER
30
25
10
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
VCE = 4 V
f = 1 GHz
MAG
MSG
25
Collector Current, IC (mA)
Insertion Power Gain, IS21eI2 (dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
100
30
VCE = 3 V
f = 2 GHz
25
20
MSG
MAG
15
10
2
|S21e|
5
0
1
10
Collector Current, IC (mA)
100
NESG2101M05
TYPICAL PERFORMANCE CURVES (TA = 25°C)
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
30
Insertion Power Gain, IS21eI2 (dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
Insertion Power Gain, IS21eI2 (dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
VCE = 4 V
f = 2 GHz
25
20
MSG
MAG
15
2
10
|S21e|
5
0
1
10
20
VCE = 3 V
f = 3 GHz
15 MSG
MAG
10
2
|S21e|
5
0
-5
-10
100
1
Collector Current, IC (mA)
Collector Current, IC (mA)
OUTPUT POWER, POWER GAIN, COLLECTOR
CURRENT, COLLECTOR EFFICIENCY
vs. INPUT POWER
30
20
VCE = 4 V
f = 3 GHz
120
VCE = 3.6 V, f = 1 GHz
Icq = 10 mA
15 MSG
100
25
Output Power, Pout (dBm)
Power Gain, GP (dB)
Insertion Power Gain, IS21eI2 (dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
MAG
10
2
|S21e|
5
0
-5
100
10
GP
20
80
Pout
15
60
IC
40
10
ηC
20
5
0
-20
-10
1
-15
-10
-5
0
5
0
10
Collector Current, IC (mA)
Input Power, Pin (dBm)
OUTPUT POWER, POWER GAIN, COLLECTOR
CURRENT, COLLECTOR EFFICIENCY
vs. INPUT POWER
OUTPUT POWER, POWER GAIN, COLLECTOR
CURRENT, COLLECTOR EFFICIENCY
vs. INPUT POWER
25
25
120
GP
15
80
Pout
10
60
IC
40
5
ηC
20
0
-10
-5
0
5
Input Power, Pin (dBm)
10
0
15
Output Power, Pout (dBm)
Power Gain, GP (dB)
100
20
-5
-15
120
VCE = 3.6 V, f = 3 GHz
Icq = 10 mA
VCE = 3.6 V, f = 2 GHz
Icq = 10 mA
Output Power, Pout (dBm)
Power Gain, GP (dB)
100
10
20
100
15
80
GP
10
60
Pout
40
5
IC
0
-5
-15
20
ηC
-10
-5
0
5
10
Input Power, Pin (dBm)
0
15
NESG2101M05
TYPICAL PERFORMANCE CURVES (TA = 25°C)
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY
vs. INPUT POWER
25
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
120
25
100
20
15
4
80
Pout
10
60
GP
40
5
IC
0
20
Ga
3
15
2
10
1
5
Associated Gain, Ga (dB)
VCE = 1 V
f = 1 GHz
Noise Figure, NF (dB)
Output Power, Pout (dBm)
Power Gain, GP (dB)
VCE = 3.6 V, f = 5.2 GHz
Icq = 10 mA
20
ηC
NF
-5
0
5
10
15
0
0
20
1
Input Power, Pin (dBm)
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
4
25
20
VCE = 1 V
f = 2 GHz
Ga
20
3
15
2
10
1
5
Noise Figure, NF (dB)
4
Associated Gain, Ga (dB)
VCE = 2 V
f = 1 GHz
Noise Figure, NF (dB)
0
100
10
15
3
Ga
2
10
5
1
Associated Gain, Ga (dB)
-5
-10
NF
NF
0
0
100
10
0
1
Collector Current, IC (mA)
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
4
4
20
20
VCE = 1 V
f = 3 GHz
Ga
2
15
10
5
1
NF
0
10
Collector Current, IC (mA)
0
100
Noise Figure, NF (dB)
3
Associated Gain, Ga (dB)
Noise Figure, NF (dB)
VCE = 2 V
f = 2 GHz
1
0
100
10
15
3
Ga
2
10
5
1
NF
0
1
10
Collector Current, IC (mA)
0
100
Associated Gain, Ga (dB)
1
NESG2101M05
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
4
20
5
25
Ga
2
10
5
1
NF
Ga
Noise Figure, NF (dB)
15
3
4
20
3
15
2
10
1
5
Associated Gain, Ga (dB)
VCE = 3 V
f = 1 GHz
Associated Gain, Ga (dB)
Noise Figure, NF (dB)
VCE = 2 V
f = 3 GHz
NF
0
1
0
100
10
0
1
Collector Current, IC (mA)
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
4
25
20
3
15
2
10
1
5
Noise Figure, NF (dB)
20
Associated Gain, Ga (dB)
Ga
4
Ga
3
2
15
10
5
1
Associated Gain, Ga (dB)
VCE = 3 V
f = 2 GHz
VCE = 4 V
f = 1 GHz
Noise Figure, NF (dB)
0
100
10
NF
NF
1
0
0
100
10
1
Collector Current, IC (mA)
Collector Current, IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
4
4
20
20
VCE = 3 V
f = 3 GHz
15
2
10
5
1
Noise Figure, NF (dB)
Ga
3
Associated Gain, Ga (dB)
VCE = 4 V
f = 2 GHz
Noise Figure, NF (dB)
0
100
10
15
3
Ga
2
10
5
1
NF
NF
0
1
10
Collector Current, IC (mA)
0
100
0
1
10
Collector Current, IC (mA)
0
100
Associated Gain, Ga (dB)
0
NESG2101M05
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
4
20
Associated Gain, Ga (dB)
Noise Figure, NF (dB)
VCE = 4 V
f = 3 GHz
15
3
Ga
2
10
5
1
NF
0
1
0
100
10
Collector Current, IC (mA)
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M05
FLAT LEAD 4-PIN THIN TYPE SUPER MINIMOLD
2.05±0.1
1.25±0.1
3
T1J
2
2.0 ±0.1
4
0.65
1.30
0.65
1
+0.1
0.30-0.05
0.59±0.05
PIN CONNECTIONS
1. Base
2. Emitter
3. Collector
4. Emitter
0.11 +0.1
-0.05
NESG2101M05
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
+90º
j50
S21
j100
j25
+135º
+45º
j10
S12
0
10
25
50
100
S22
.2
+180º
.4
.6
-135º
-j25
NESG2101M05
VC = 2 V, IC = 10 mA
FREQUENCY
-j100
-90º
S11
S21
GHz
MAG
ANG
MAG
0.789
0.728
0.640
0.625
0.623
0.618
0.616
0.615
0.613
0.612
0.613
0.613
0.612
0.612
0.612
0.613
0.613
0.617
0.616
0.616
0.618
0.620
0.618
0.621
0.621
0.623
0.626
0.626
0.630
0.633
0.637
0.657
0.684
0.711
0.735
-60.55
-101.35
-126.85
-144.45
-151.37
-157.17
-162.79
-167.45
-171.88
-176.14
-179.93
176.51
173.28
170.36
167.10
164.14
161.30
158.82
155.93
153.29
150.71
148.00
145.67
143.19
140.77
138.24
133.27
128.35
123.52
118.84
113.84
91.22
69.73
52.77
35.04
22.546
16.859
12.438
9.872
8.927
8.141
7.468
6.893
6.401
5.971
5.595
5.262
4.969
4.710
4.470
4.260
4.067
3.883
3.723
3.575
3.437
3.311
3.195
3.088
2.983
2.889
2.718
2.568
2.436
2.316
2.209
1.801
1.516
1.296
1.130
Note:
1. Gain Calculations:
(K
+0º
K 2- 1
-45º
-j50
0.200
0.400
0.600
0.800
0.900
1.000
1.100
1.200
1.300
1.400
1.500
1.600
1.700
1.800
1.900
2.000
2.100
2.200
2.300
2.400
2.500
2.600
2.700
2.800
2.900
3.000
3.200
3.400
3.600
3.800
4.000
5.000
6.000
7.000
8.000
|S21|
|S12|
1
S11
-j10
MAG =
.8
S12
S22
ANG
MAG
ANG
MAG
ANG
143.21
119.77
105.88
95.71
91.52
87.71
84.22
80.93
77.88
74.92
72.08
69.40
66.77
64.19
61.72
59.24
56.96
54.51
52.25
49.92
47.73
45.48
43.27
41.06
38.89
36.77
32.52
28.32
24.16
20.02
15.92
-4.45
-24.91
-43.46
-61.62
0.038
0.055
0.061
0.066
0.068
0.070
0.072
0.073
0.075
0.076
0.078
0.080
0.081
0.083
0.085
0.087
0.089
0.091
0.092
0.094
0.096
0.098
0.100
0.103
0.104
0.106
0.111
0.115
0.119
0.124
0.128
0.149
0.168
0.183
0.195
57.24
40.53
32.65
28.51
27.07
25.95
25.14
24.39
23.86
23.41
22.92
22.49
22.12
21.73
21.34
20.76
20.30
19.87
19.47
18.90
18.25
17.72
17.10
16.52
15.93
15.02
13.69
12.16
10.49
8.76
6.86
-3.74
-16.26
-28.22
-40.47
0.827
0.640
0.469
0.394
0.370
0.349
0.332
0.320
0.308
0.300
0.292
0.287
0.282
0.279
0.276
0.274
0.272
0.269
0.268
0.268
0.268
0.267
0.268
0.266
0.267
0.267
0.268
0.270
0.270
0.271
0.273
0.280
0.288
0.302
0.313
-44.95
-74.08
-90.20
-104.59
-110.30
-116.15
-121.03
-125.84
-130.30
-134.44
-138.47
-142.03
-145.38
-148.48
-151.73
-154.58
-157.43
-159.83
-162.52
-164.76
-167.14
-169.01
-171.14
-172.97
-174.99
-176.60
-179.91
177.06
174.03
171.13
168.42
153.64
134.59
116.54
97.12
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
K
MAG1
(dB)
0.112
0.191
0.384
0.481
0.522
0.569
0.613
0.651
0.694
0.731
0.766
0.797
0.830
0.856
0.887
0.910
0.933
0.948
0.975
0.995
1.012
1.025
1.042
1.053
1.069
1.079
1.098
1.118
1.129
1.139
1.147
1.166
1.170
1.172
1.186
27.77
24.83
23.06
21.73
21.16
20.67
20.19
19.74
19.33
18.94
18.56
18.19
17.85
17.52
17.21
16.91
16.61
16.31
16.05
15.79
14.87
14.31
13.77
13.38
12.95
12.63
12.00
11.41
10.93
10.46
10.05
8.36
7.07
6.00
5.02
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NESG2101M05
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
+90º
j100
j25
S21
+135º
+45º
j10
S12
0
10
25
50
100
S22
.2
+180º
.4
.6
.8
1
+0º
S11
-j10
-135º
-j25
NESG2101M05
VC = 3 V, IC = 50 mA
FREQUENCY
-45º
-j100
-j50
-90º
S11
S21
S12
S22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.200
0.400
0.600
0.800
0.900
1.000
1.100
1.200
1.300
1.400
1.500
1.600
1.700
1.800
1.900
2.000
2.100
2.200
2.300
2.400
2.500
2.600
2.700
2.800
2.900
3.000
3.200
3.400
3.600
3.800
4.000
5.000
6.000
7.000
8.000
0.572
0.588
0.565
0.571
0.575
0.574
0.578
0.579
0.580
0.582
0.584
0.586
0.585
0.586
0.586
0.588
0.590
0.594
0.593
0.593
0.595
0.598
0.596
0.598
0.599
0.601
0.604
0.604
0.608
0.609
0.613
0.630
0.655
0.681
0.706
-113.11
-146.82
-164.47
-174.66
-178.62
177.67
174.15
171.23
168.24
165.28
162.68
160.14
157.81
155.73
153.15
150.78
148.53
146.68
144.30
142.02
139.86
137.53
135.56
133.38
131.30
128.98
124.58
120.05
115.64
111.42
106.64
85.56
65.39
49.45
32.47
40.843
24.097
16.568
12.645
11.301
10.218
9.319
8.556
7.916
7.362
6.879
6.455
6.087
5.759
5.462
5.196
4.960
4.730
4.533
4.351
4.182
4.025
3.883
3.750
3.623
3.510
3.300
3.118
2.957
2.812
2.684
2.191
1.847
1.588
1.394
122.65
102.66
93.61
86.36
83.26
80.41
77.77
75.23
72.83
70.48
68.16
65.95
63.80
61.61
59.51
57.39
55.46
53.32
51.36
49.30
47.40
45.40
43.42
41.47
39.50
37.60
33.78
29.94
26.15
22.38
18.56
-0.52
-20.04
-37.86
-55.46
0.022
0.029
0.034
0.040
0.043
0.046
0.049
0.052
0.056
0.059
0.062
0.066
0.069
0.072
0.076
0.079
0.082
0.086
0.089
0.092
0.095
0.098
0.102
0.105
0.108
0.111
0.118
0.124
0.130
0.136
0.142
0.169
0.191
0.208
0.219
47.89
43.32
45.52
47.14
47.40
47.66
47.88
47.76
47.49
47.26
46.69
46.07
45.35
44.60
43.97
42.87
41.96
40.87
39.88
38.91
37.77
36.70
35.46
34.20
33.05
31.78
29.38
26.78
24.08
21.31
18.59
4.19
-11.37
-25.62
-39.67
0.622
0.465
0.366
0.344
0.338
0.334
0.331
0.329
0.327
0.327
0.327
0.328
0.328
0.328
0.329
0.330
0.330
0.329
0.331
0.331
0.334
0.333
0.335
0.334
0.335
0.335
0.336
0.338
0.337
0.339
0.340
0.345
0.357
0.369
0.379
-81.31
-115.51
-135.31
-148.51
-153.30
-157.83
-161.79
-165.34
-168.83
-171.79
-174.83
-177.28
-179.74
177.91
175.52
173.57
171.41
169.50
167.46
165.70
163.93
162.52
160.76
159.24
157.55
156.19
153.36
150.81
148.07
145.42
142.94
128.61
110.41
92.60
73.61
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
K
MAG1
0.326
0.535
0.766
0.864
0.896
0.929
0.952
0.972
0.990
1.005
1.017
1.026
1.035
1.041
1.051
1.056
1.059
1.060
1.067
1.071
1.075
1.076
1.080
1.080
1.083
1.084
1.087
1.090
1.089
1.090
1.090
1.089
1.089
1.094
1.105
32.65
29.25
26.89
25.01
24.21
23.47
22.77
22.13
21.52
20.55
19.65
18.95
18.31
17.76
17.21
16.75
16.31
15.93
15.49
15.11
14.75
14.44
14.09
13.80
13.48
13.22
12.68
12.17
11.75
11.31
10.93
9.30
8.03
6.97
6.06
(dB)
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NESG2101M05
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
+90º
j50
j100
j25
S21
+135º
+45º
j10
S12
0
10
25
50
100
S22
.2
+180º
.4
.6
.8
1
+0º
S11
-j10
-135º
-j25
NESG2101M05
VC = 3.6 V, IC = 10 mA
FREQUENCY
-45º
-j100
-j50
-90º
S11
S21
S12
S22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.200
0.400
0.600
0.800
0.900
1.000
1.100
1.200
1.300
1.400
1.500
1.600
1.700
1.800
1.900
2.000
2.100
2.200
2.300
2.400
2.500
2.600
2.700
2.800
2.900
3.000
3.200
3.400
3.600
3.800
4.000
5.000
6.000
7.000
8.000
0.789
0.726
0.634
0.619
0.612
0.607
0.606
0.603
0.605
0.603
0.603
0.601
0.603
0.603
0.602
0.603
0.605
0.605
0.605
0.605
0.606
0.608
0.607
0.609
0.610
0.611
0.613
0.616
0.617
0.621
0.624
0.645
0.674
0.703
0.730
-57.89
-98.15
-123.23
-141.61
-148.55
-154.90
-160.48
-165.23
-169.91
-173.86
-177.86
178.57
175.17
172.01
168.75
165.91
162.98
160.18
157.54
154.92
152.29
149.78
147.22
144.76
142.18
139.97
134.84
130.04
125.12
120.40
115.57
92.70
71.09
54.11
36.29
22.895
17.340
12.889
10.285
9.304
8.480
7.794
7.205
6.687
6.244
5.852
5.509
5.203
4.923
4.677
4.459
4.256
4.067
3.898
3.743
3.600
3.468
3.345
3.233
3.127
3.027
2.849
2.690
2.552
2.427
2.315
1.886
1.587
1.354
1.179
144.36
121.13
106.94
96.59
92.38
88.48
84.91
81.64
78.44
75.51
72.66
69.92
67.24
64.71
62.23
59.76
57.44
55.01
52.69
50.39
48.17
45.89
43.72
41.51
39.34
37.20
32.93
28.73
24.58
20.47
16.31
-4.08
-24.60
-43.38
-61.88
0.036
0.053
0.059
0.064
0.066
0.068
0.070
0.071
0.073
0.075
0.076
0.078
0.079
0.081
0.083
0.085
0.086
0.088
0.090
0.092
0.094
0.096
0.098
0.100
0.102
0.104
0.108
0.112
0.116
0.120
0.124
0.144
0.161
0.174
0.185
58.70
42.11
34.42
30.25
29.03
27.89
27.18
26.60
25.96
25.57
25.20
24.82
24.50
24.11
23.81
23.47
23.03
22.63
22.17
21.67
21.18
20.62
20.15
19.59
19.01
18.16
16.95
15.48
13.94
12.13
10.28
-0.33
-12.96
-25.46
-38.34
0.837
0.649
0.476
0.397
0.369
0.345
0.328
0.313
0.301
0.291
0.283
0.276
0.270
0.266
0.262
0.259
0.257
0.255
0.253
0.252
0.252
0.251
0.251
0.250
0.250
0.251
0.251
0.252
0.253
0.255
0.256
0.264
0.271
0.286
0.296
-42.54
-70.19
-85.69
-99.12
-104.66
-110.32
-114.99
-119.56
-124.08
-128.11
-132.00
-135.75
-139.12
-142.52
-145.54
-148.55
-151.41
-154.00
-156.55
-158.93
-161.10
-163.46
-165.49
-167.54
-169.39
-171.29
-174.61
-177.81
179.23
176.30
173.50
158.38
139.17
120.42
100.19
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
K
MAG1
0.116
0.195
0.388
0.481
0.529
0.576
0.616
0.658
0.692
0.731
0.765
0.800
0.828
0.858
0.887
0.911
0.933
0.956
0.977
0.996
1.014
1.028
1.047
1.060
1.073
1.084
1.104
1.122
1.138
1.146
1.156
1.180
1.186
1.192
1.206
28.04
25.14
23.37
22.04
21.48
20.96
20.49
20.04
19.63
19.23
18.86
18.51
18.16
17.82
17.51
17.21
16.92
16.63
16.36
16.09
15.11
14.56
14.02
13.61
13.23
12.89
12.26
11.69
11.17
10.73
10.31
8.62
7.33
6.25
5.30
(dB)
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NESG2101M05
NONLINEAR MODEL
SCHEMATIC
CCBPKG
CCB
LCPKG
LB
LBPKG
Base
Collector
CCE
Q1
LE
CCEPKG
LEPKG
CBEPKG
BJT NONLINEAR MODEL PARAMETERS(1)
Emitter
ADDITIONAL PARAMETERS
Parameters
Q1
Parameters
Q1
Parameters
NESG2101M05
IS
3.64e-15
MJC
0.149
CCB
0.01 pF
BF
309.7
XCJC
1
CCE
0.2 pF
NF
1.079
CJS
0
LB
0.16 nH
VAF
56
VJS
0.75
IKF
233.9
MJS
0
ISE
11.67e-15
FC
0.8
NE
1.648
TF
4e-12
BR
20.01
XTF
10
NR
1.080
VTF
5
VAR
2.782
ITF
0.5
IKR
54.57e-3
PTF
20
ISC
1.024e-18
TR
0
NC
1.35
EG
1.11
RE
1.6
XTB
1.3
RB
2.2
XTI
5.2
RBM
0.05
KF
0
IRB
1e-4
AF
1
RC
4.8
CJE
1.461e-12
VJE
0.798
MJE
0.137
CJC
489.9e-15
VJC
0.605
LE
0.17 nH
CCBPKG
0.45 pF
CCEPKG
0.02 pF
CBEPKG
0.05 pF
LBPKG
0.8 nH
LCPKG
1.2 nH
LEPKG
0.15 nH
MODEL TEST CONDITIONS
Frequency: 0.1 to 6 GHz
Bias:
VCE = 2 V, IC = 5 mA to 40 mA
Date:
09/2003
(1) Gummel-Poon Model
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
05/11/2005
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.