DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC29M33A,µPC29M05A THREE-TERMINAL LOW DROPOUT VOLTAGE REGULATOR DESCRIPTION The µPC29M33A, µPC29M05A of low dropout voltage three terminal positive regulators is constructed with PNP output transistor. The µPC29M33A, µPC29M05A feature the ability to source 0.5 A of output current with a low dropout voltage of typically 0.5 V. The power dissipation of the µPC29M33A, µPC29M05A can be drastically reduced compared with the conventional three terminal positive voltage regulators that is constructed with NPN output transistor. Also, this series corresponds to the low voltage output (3 V, 3.3 V) which is not in the conventional low dropout regulators ( µPC24M00A series). FEATURES • Output current in excess of 0.5 A • Low dropout voltage VDIF = 0.5 V TYP. (at IO = 0.5 A) • On-chip overcurrent and thermal protection circuit • On-chip output transistor safe area protection circuit PIN CONFIGURATION (Marking Side) µPC29M33AHF, µPC29M05AHF: MP-45G µPC29M33AHB, µPC29M05AHB: MP-3 µPC29M33A, µPC29M05AT: MP-3Z 4 1 2 1 3 1: INPUT 2: GND 3: OUTPUT 2 3 1: 2: 3: 4: INPUT GND OUTPUT GND (Fin) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15368EJ1V0DS00 (1st edition) Date Published May 2001 NS CP(K) Printed in Japan © 2001 µPC29M33A,µPC29M05A BLOCK DIAGRAM INPUT Safe operating area protection Start-up circuit Reference voltage Error amp. Saturation protection Drive circuit OUTPUT Thermal shut down Over current protection GND 2 Data Sheet G15368EJ1V0DS µPC29M33A,µPC29M05A ORDERING INFORMATION Part Number Package Output Voltage Marking MP-45G 3.3 V 29M33A • Packed in envelope MP-3 (SC-64) 3.3 V 29M33A • Packed in envelope µ PC29M33AT MP-3Z (SC-63) 3.3 V 29M33A • Packed in envelope µ PC29M33AT-E1 MP-3Z (SC-63) 3.3 V 29M33A • 16 mm wide embossed taping µ PC29M33AHF Package Type (Isolated TO-220) µ PC29M33AHB • Pin 1 on drawout side • 2000 pcs/reel µ PC29M33AT -E2 MP-3Z (SC-63) 3.3 V 29M33A • 16 mm width embossed taping • Pin 1 at takeup side • 2000 pcs/reel µ PC29M33AT -T1 MP-3Z (SC-63) 3.3 V 29M33A • 32 mm wide adhesive taping • Pin 1 at drawout side • 1500 pcs/reel µ PC29M33AT -T2 MP-3Z (SC-63) 3.3 V 29M33A • 32 mm wide adhesive taping • Pin 1 at takeup side • 1500 pcs/reel µ PC29M05AHF 5.0 V 29M05A • Packed in envelope MP-3 (SC-64) 5.0 V 29M05A • Packed in envelope µ PC29M05AT MP-3Z (SC-63) 5.0 V 29M05A • Packed in envelope µ PC2905AT-E1 MP-3Z (SC-63) 5.0 V 29M05A • 16 mm wide embossed taping MP-45G (Isolated TO-220) µ PC29M05AHB • Pin 1 at drawout side • 2000 pcs/reel µ PC2905AT-E2 MP-3Z (SC-63) 5.0 V 29M05A • 16 mm wide embossed taping • Pin 1 at takeup side • 2000 pcs/reel µ PC2905AT-T1 MP-3Z (SC-63) 5.0 V 29M05A • 32 mm wide adhesive taping • Pin 1 at drawout side • 1500 pcs/reel µ PC2905AT-T2 MP-3Z (SC-63) 5.0 V 29M05A • 32 mm wide adhesive taping • Pin 1 at takeup side • 1500 pcs/reel Data Sheet G15368EJ1V0DS 3 µPC29M33A,µPC29M05A ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Rating Parameter Symbol Input Voltage µ PC29M33AHF, µPC29M33AHB, µPC29M05AHB µ PC29M05AHF µPC29M33AT, µPC29M05AT VIN Internal Power Dissipation Note (TC = 25°C) 20 PT Unit V 15 10 W Operating Ambient Temperature TA –30 to +85 °C Operating Junction Temperature TJ –30 to +150 °C Storage Temperature Tstg –55 to +150 °C Thermal Resistance (junction to case) Rth(J-C) 7 12.5 °C/W Thermal Resistance (junction to ambient) Rth(J-A) 65 125 °C/W Note Internally limited. When the operating junction temperature rises over 150°C, the internal circuit shuts down the output voltage. Caution If the absolute maximum rating of any of the above parameters is exceeded even momentarily, the quality of the product may be degraded. In other words, absolute maximum ratings specify the values exceeding which the product may be physically damaged. Be sure to use the product with these ratings never exceeded. STANDARD CONNECTION D1 PC29M33A, PC29M05A INPUT OUTPUT + CIN COUT D2 CIN: 0.1 µF or higher. Set this value according to the length of the line between the regulator and INPUT pin. Be sure to connect CIN to prevent parasitic oscillation. Use of a film capacitor or other capacitor with excellent voltage and temperature characteristics is recommended. If using a laminated ceramic capacitor, it is necessary to ensure that CIN is 0.1 µF or higher for the voltage and temperature range to be used. COUT: 47 µF or higher. Be sure to connect COUT to prevent oscillation and improve excessive load regulation. Place CIN and COUT as close as possible to the IC pins (within 2 cm). Also, use an electrolytic capacitor with low impedance characteristics if considering use at sub-zero temperatures. D1: If the OUTPUT pin has a higher voltage than the INPUT pin, connect a diode. D2: If the OUTPUT pin has a lower voltage than the GND pin, connect a Schottky barrier diode. Caution Make sure that no voltage is applied to the OUTPUT pin from external. 4 Data Sheet G15368EJ1V0DS µPC29M33A,µPC29M05A RECOMMENDED OPERATING CONDITIONS Parameter Symbol Type Number MIN. TYP. MAX. Unit V µ PC29M33A 4.3 16 µ PC29M05A 6 16 IO All 0 0.5 A Operating Ambient Temperature TA All –30 +85 °C Operating Junction Temperature TJ All –30 +125 °C Input Voltage Output Current VIN ELECTRICAL CHARACTERISTICS µPC29M33A (TJ = 25°°C, VIN = 5 V, IO = 350 mA, CIN = 0.22 µF, COUT = 47 µF, unless otherwise specified) Parameter Output Voltage Symbol Conditions VO 0°C ≤ TJ ≤ 125°C, 4.3 V ≤ VIN ≤ 16 V, 0 A ≤ IO ≤ 350 mA MIN. TYP. MAX. Unit 3.18 3.3 3.42 V 3.14 3.46 0°C ≤ TJ ≤ 125°C, 0 A ≤ IO ≤ 0.5 A Line Regulation REGIN 4.3 V ≤ VIN ≤ 16 V 8 33 Load Regulation REGL 0 A ≤ IO ≤ 0.5 A 10 33 Quiescent Current IBIAS IO = 0 A 1.8 3.0 IO = 0.5 A 15 20 VIN = 3.1 V, IO = 0 A 9 20 Startup Quiescent Current IBIAS (s) VIN = 3.1 V, IO = 0.5 A mV mA mA 50 Quiescent Current Change ∆IBIAS 0°C ≤ TJ ≤ 125°C, 4.3 V ≤ VIN ≤ 16 V 2.9 Output Noise Voltage Vn 10 Hz ≤ f ≤ 100 kHz 56 µ Vr.m.s. Ripple Rejection R•R 4.3 V ≤ VIN ≤ 16 V, f = 120 Hz 64 dB Dropout Voltage VDIF 0°C ≤ TJ ≤ 125°C, IO = 0.5 A Short Circuit Current IOpeak VIN = 4.5 V 48 0.7 VIN = 16 V Peak Output Current Temperature Coefficient of Output Voltage IOpeak ∆VO /∆T 15 0.5 1.0 V 1.1 1.5 A A 0.6 VIN = 4.5 V 0.7 1.2 1.5 VIN = 16 V 0.6 1.0 1.5 0°C ≤ TJ ≤ 125°C, IO = 5 mA Data Sheet G15368EJ1V0DS mA –0.4 mV/°C 5 µPC29M33A,µPC29M05A µPC29M05A (TJ = 25°°C, VIN = 8 V, IO = 350 mA, CIN = 0.22 µF, COUT = 47 µF, unless otherwise specified) Parameter Output Voltage Symbol Conditions VO 0°C ≤ TJ ≤ 125°C, 6 V ≤ VIN ≤ 16 V, 0 A ≤ IO ≤ 350 mA MIN. TYP. MAX. Unit 4.83 5.0 5.18 V 4.75 5.25 0°C ≤ TJ ≤ 125°C, 0 A ≤ IO ≤ 0.5 A Line Regulation REGIN 6 V ≤ VIN ≤ 16 V 26 50 mV Load Regulation REGL 0 A ≤ IO ≤ 0.5 A 17 50 mV Quiescent Current IBIAS IO = 0 A 1.9 4.0 mA IO = 0.5 A 15 20 VIN = 4.5 V, IO = 0 A 10 20 Startup Quiescent Current IBIAS (s) VIN = 4.5 V, IO = 0.5 A mA 50 Quiescent Current Change ∆IBIAS 0°C ≤ TJ ≤ 125°C, 6 V ≤ VIN ≤ 16 V 2.4 Output Noise Voltage Vn 10 Hz ≤ f ≤ 100 kHz 87 µ Vr.m.s. Ripple Rejection R•R 6 V ≤ VIN ≤ 16 V, f = 120 Hz 60 dB Dropout Voltage VDIF 0°C ≤ TJ ≤ 125°C, IO = 0.5 A Short Circuit Current IOpeak VIN = 6.5 V 46 0.65 VIN = 16 V Peak Output Current Temperature Coefficient of Output Voltage 6 IOpeak ∆VO /∆T 15 0.5 1.0 V 1.1 1.5 A A 0.6 VIN = 6.5 V 0.7 1.2 1.5 VIN = 16 V 0.6 1.1 1.5 0°C ≤ TJ ≤ 125°C, IO = 5 mA Data Sheet G15368EJ1V0DS mA 0.7 mV/°C µPC29M33A,µPC29M05A TYPICAL CHARACTERISTICS (Reference Values) ∆VO vs TJ Pd vs. TA 150 Solid line: µPC29M33AHF, µPC29M05AHF Broken line: µPC29M33AHB , µPC29M05AHB µPC29M33AT , µPC29M05AT 15 ∆ VO - Output Voltage Deviation - mV Pd - Total Power Dissipation - W 20 With infinite heatsink 10 5 Without 0 heatsink 100 50 µ PC29M05A 0 µ PC29M33A –50 –100 –150 IO = 5 mA 25 0 50 75 100 125 –200 –50 150 TA - Operating Ambient Temperature - ˚C 50 0 100 TJ - Operating Junction Temperature - ˚C VO vs. VIN (µPC29M05A) VO vs. VIN (µPC29M33A) 8 4.0 TJ = 25˚C TJ = 25˚C I O = 5 mA 7 3.5 I O = 0.5 A 6 3.0 VO - Output Voltage - V VO - Output Voltage - V I O = 0.35 A I O = 0.5 A 2.5 2.0 1.5 1.0 I O = 0.35 A 5 I O = 5 mA 4 3 2 1 0.5 0 0 0 1 2 3 4 5 6 VIN - Input Voltage - V 7 0 8 1 IBIAS (IBIAS(s)) vs. VIN ( µ PC29M33A) 7 8 T = 25˚C IBIAS - Quiescent Current - mA 40 30 20 I O = 0.5 A I O = 0.35 A 40 30 20 I O = 0.5 A I O = 0.35 A 10 IO= 0 A 0 3 4 5 6 VIN - Input Voltage - V 50 TJ = 25˚C 10 2 IBIAS (IBIAS(s)) vs. VIN (µPC29M05A) 50 IBIAS - Quiescent Current - mA 150 O =0A 0 0 2 4 6 8 10 12 14 16 18 20 0 2 VIN - Input Voltage - V Data Sheet G15368EJ1V0DS 4 6 8 10 12 14 VIN - Input Voltage - V 16 18 20 7 µPC29M33A,µPC29M05A IOpeak vs. VDIF (µPC29M33A) VDIF vs. TJ 1.5 IOpeak - Peak Output Current - A VDIF - Dropout Voltage - V 1.0 0.8 0.6 µ PC29M05A µPC29M33A 0.4 0.2 1.0 TJ = 0˚C TJ = 25˚C TJ = 125˚C 0.5 I O = 0.5 A 0 -25 0 25 50 75 100 125 0.0 150 0 TJ - Operating Junction Temperature - ˚C 5 10 15 VDIF - Dropout Voltage - V IOpeak vs. VDIF (µPC2905A) R·R vs f 80 R·R - Ripple Rejection - dB 1.5 IOpeak - Peak Output Current - A 20 TJ = 0˚C 1.0 TJ = 25˚C 0.5 TJ = 125˚C 70 µ PC29M33A 60 µ PC29M05A 50 40 30 TJ = 25˚C, IO = 0.5 A 4.3 V ≤ VIN ≤ 16 V µ PC29M33A 6 V≤ VIN ≤ 16 V µ PC29M05A 20 0 0.0 5 0 10 15 10 20 100 1k 10 k 100 k f - Frequency - Hz VDIF - Dropout Voltage - V . VDIF vs. IO R R vs. IO 80 1.0 40 VDIF - Dropout Voltage - V . R - Ripple Rejection - dB 70 R TJ = 25˚C µ PC29M33A 60 µ PC29M05A 50 TJ = 25˚C, f = 120 Hz 4.3 V ≤ VIN ≤ 16 V µ PC29M33A 6 V≤ VIN ≤ 16 V µ PC29M05A 0.8 0.6 µPC29M33A 0.4 µ PC29M05A 0.2 30 0 0 0.1 0.2 0.3 0.4 0.5 0 8 0.1 0.2 0.3 IO - Output Current - A IO - Output Current - A Data Sheet G15368EJ1V0DS 0.4 0.5 µPC29M33A,µPC29M05A VO vs. IO (µPC29M05A) VO vs. IO ( µ PC29M33A) 6 6 TJ = 25˚C TJ = 25˚C 5 VO - Output Voltage - V VO - Output Voltage - V 5 4 V =5V 3 2 VIN = 16 V 4 3 VIN = 16 V 2 VIN = 6 V 1 1 0 VIN = 8V VIN = 4.3 V 0.2 0.4 0.6 0.8 1.0 1.2 0 IO - Output Current - A Data Sheet G15368EJ1V0DS 0.2 0.4 0.6 0.8 IO - Output Current - A 1.0 1.2 9 µPC29M33A,µPC29M05A PACKAGE DRAWINGS µPC29M33AHF, µPC29M05AHF 3PIN PLASTIC SIP (MP-45G) A N E P B I L M D 1 2 3 K Y V J H U Z C F G M NOTE ITEM Each lead centerline is located within 0.25 mm of its true position (T.P.) at maximum material condition. MILLIMETERS A 10.0±0.2 B 7.0±0.2 C 1.50±0.2 D E 17.0±0.3 φ 3.3±0.2 F 0.75±0.10 G 0.25 H 2.54 (T.P.) I 5.0±0.3 J K 2.46±0.2 5.0±0.2 L 8.5±0.2 M 8.5±0.2 N 4.5±0.2 P U V 2.8±0.2 2.4±0.5 0.65±0.10 Y Z 8.9±0.7 1.30±0.2 P3HF-254B-4 10 Data Sheet G15368EJ1V0DS µPC29M33A,µPC29M05A µPC29M33AHB, µPC29M05AHB MP-3 (SC-64) (Unit: mm) 2.3±0.2 0. 2 1.5 +–0. 1 6.5±0.2 5.0±0.2 0.5±0.1 2 3 7.0 MIN. 1 13.7 MIN. 1.6±0.2 5.5±0.2 4 1.1±0.1 0.2 0.5 +–0.1 2.3 0.75 2.3 0.2 0.5 +–0.1 µPC29M33AT, µPC29M05AT MP-3Z (SC-63) (Unit: mm ) 2.3±0.2 1.5 –0.1 +0.2 6.5±0.2 5.0±0.2 0.5±0.1 3 1.0 MIN. 1.5 TYP. 2 1.1±0.2 0.9 MAX. 2.3 2.3 Data Sheet G15368EJ1V0DS 0.8 MAX. 0.5 0.8 2.0 MIN. 1 10.0 MAX. 5.5±0.2 4.3 MAX. 4 0.8 11 µPC29M33A,µPC29M05A RECOMMENDED SOLDERING CONDITIONS When soldering this product, it is highly recommended to observe the conditions as shown below. If other soldering processes are used, or if the soldering is perfomed under different condition, please make sure to consult with our sales offices. For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL” (C10535E). Surface Mount Device µPC29M33AT, µPC29M05AT: MP-3Z (SC-63) Process Infrared Ray Reflow Conditions Peak temperature: 235°C or below (Package surface temperature), Symbol IR35-00-2 Reflow time: 30 seconds or less (at 210°C or higher), Maximum number of reflow processes: 2 times or less. Vapor Phase Soldering Peak temperature: 215°C or below (Package surface temperature), VP15-00-2 Reflow time: 40 seconds or less (at 200°C or higher), Maximum number of reflow processes: 2 times or less. Wave Soldering Solder temperature: 260°C or below, Flow time: 10 seconds or less, WS60-00-1 Maximum number of flow processes: 1 time, Pre-heating temperature: 120°C or below (Package surface temperature). Partial Heating Method Pin temperature: 300°C or below, – Heat time: 3 seconds or less (Per each side of the device). Caution Apply only one kind of soldering condition to a device, except for "partial heating method", or the device will be damaged by heat stress. Through-hole devices µPC29M33AHF, µPC29M05AHF: MP-45G µPC29M33AHB, µPC29M05AHB: MP-3 Process Conditions Wave soldering Solder temperature: 260°C or below, (only to leads) Flow time: 10 seconds or less. Partial heating method Pin temperature: 300°C or below, Heat time: 3 seconds or less (Per each pin). Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered. 12 Data Sheet G15368EJ1V0DS µPC29M33A,µPC29M05A NOTES ON USE When the µPC29M33A, µPC29M05A are used with an input voltage that is lower than the value indicated in the recommended operating conditions, a large quiescent current flows through the device due to saturation of the transistor of the output stage. (Refer to the IBIAS (IBIAS(S)) vs. VIN curves in TYPICAL CHARACTERISTICS). These products have saturation protector, but a current of up to 80 mA MAX. may flow through the device. Thus the power supply on the input side must have sufficient capacity to allow this quiescent current to pass when the device starts up. REFERENCE DOCUMENTS Document Name Document No. QUALITY GRADE ON NEC SEMICONDUCTOR DEVICES C11531E SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL C10535E VOLTAGE REGULATOR OF SMD G11872E SEMICONDUCTOR SELECTION GUIDE – PRODUCTS AND PACKAGES X13769E Data Sheet G15368EJ1V0DS 13 µPC29M33A,µPC29M05A [MEMO] 14 Data Sheet G15368EJ1V0DS µPC29M33A,µPC29M05A [MEMO] Data Sheet G15368EJ1V0DS 15 µPC29M33A,µPC29M05A • The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. 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The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. 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(Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4