NTE NTE126

NTE126
Germanium Mesa Transistor, PNP,
for High–Speed Switching Applications
Maximum Ratings:
Collector–Emitter Voltage, VCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Vdc
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Vdc
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5Vdc
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +100°C
Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +100°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Collector–Base Breakdown Voltage
(IC = 100µAdc, IE = 0)
BVCBO
Emitter–Base Breakdown Voltage
(IE = 100µAdc, IC = 0)
BVEBO
Collector–Latch–Up Voltage
(VCC = 11.5 Vdc)
LVCEX
Collector–Emitter Cutoff Current
(VCE = 15Vdc)
ICES
Collector–Base Cutoff Current
(VCB = 6Vdc, IE = 0)
ICBO
DC Current Gain
(IC = 10mAdc, VCE = 0.3Vdc)
(IC = 50mAdc, VCE = 1Vdc)
(IC = 100mAdc, VCE = 1Vdc)
hFE
Collector–Emitter Saturation Voltage
(IC = 10mAdc, IB = 1mAdc)
(IC = 50mAdc, IB = 5mAdc)
(IC = 100mAdc, IB = 10mAdc)
Min
Max
15
–
2.5
–
Unit
Vdc
Vdc
Vdc
11.5
–
–
100
µAdc
µAdc
–
3.0
40
40
40
–
–
–
–
–
–
0.18
0.35
0.60
–
VCE(sat)
Vdc
Electrical Characteristics (Cont’d): (TA = 25°C)
Parameter
Symbol
Base–Emitter Saturation Voltage
(IC = 10mAdc, IB = 1mAdc)
(IC = 50mAdc, IB = 5mAdc)
(IC = 100mAdc, IB = 10mAdc)
Min
Max
VBE(sat)
Vdc
0.30
0.40
0.40
Current–Gain–Bandwidth Product
(IE = 20mAdc, VCB = 1.0Vdc, f = 100MHz)
0.50
0.75
1.00
fT
Output Capacitance
(VCB = 10Vdc, IE = 0, f = 1MHz)
Cob
Emitter Transition Capacitance
(VEB = 1Vdc)
CTe
Turn–On Time
(IC = 10mAdc, IB1 = 5mAdc, VBE(off) = 1.25Vdc)
(IC = 100mAdc, IB1 = 5mAdc, VBE(off) = 1.25Vdc)
ton
Turn–Off Time
(IC = 10mAdc, IB1 = 1mAdc, IB2 = 0.25mAdc)
(IC = 100mAdc, IB1 = 5mAdc, IB2 = 1.25mAdc)
toff
Total Control Charge
(IC = 10mAdc, IB = 1mAdc)
(IC = 100mAdc, IB = 5mAdc)
QT
.230 (5.84) Dia Max
.195 (4.95) Dia Max
.210
(5.33)
Max
.500
(12.7)
Min
.018 (0.45)
Base
Emitter
Collector
45°
.041 (1.05)
Unit
MHz
300
–
–
4.0
–
3.5
–
–
50
50
–
–
85
85
–
–
80
125
pF
pF
ns
ns
pC