NTE102 (PNP) & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium–speed saturated switching applications. Features: D Low Collector–Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA D High Emitter–Base Breakdown Voltage: V(BR)EBO = 12V Min @ IE = 20µA Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate Above +25° . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/°C Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate Above +25° . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +100°C Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +100°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Base Breakdown Voltage V(BR)CBO IC = 20µA, IE = 0 25 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 20µA, IC = 0 12 – – V Punch–Through Voltage VPT VEBfl = 1V, Note 1 24 – – V Collector Cutoff Current ICBO VCB = 12V, IE = 0 – 0.8 5.0 µA VCB = 12V, IE = 0, TA = +80°C – 20 90 µA VEB = 2.5V, IC = 0 – 0.5 2.5 µA Emitter Cutoff Current IEBO Note 1. VPT is determined by measuring the Emitter–Base floating potential VEBfl, using a voltmeter with 11MΩ minimum input impedance. The Collector–Base Voltage, VCB, is increased until VEBfl = 1V; this value of VCB = (VPT + 1). Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 150mV, IC = 12mA 30 80 – VCE = 200mV, IC = 24mA 24 90 – IC = 12mA, IB = 0.4mA – 0.09 0.15 V IC = 24mA, IB = 1mA – 0.09 0.20 V IC = 12mA, IB = 0.4mA – 0.27 0.35 V IC = 24mA, IB = 1mA – 0.30 0.40 V ON Characteristics DC Current Gain hFE Collector–Emitter Saturation Voltage VCE(sat) Base–Emitter Voltage VBE Small–Signal Characteristics Alpha Cutoff Frequency fhfb VCB = 6V, IE = 1mA 4 25 – MHz Output Capacitance Cob VCB = 6V, IE = 1mA, f = 1MHz – 8 20 pF Input Impedance hie VCE = 6V, IE = 1mA, f = 1MHz – 3.6 – kΩ Voltage Feedback Ratio hre – 8 – x 10–4 Small–Signal Current Gain hfe – 135 – Output Admittance hoe – 50 – µmhos Delay Time td – 0.07 – µs Rise Time tr – 0.12 – µs Storage Time ts – 0.20 – µs Fall Time tf – 0.10 – µs Qsb – 300 1400 pC Switching Characteristics Stored Base Charge .352 (8.95) Dia Max .320 (98.13) Dia Max .250 (6.35) Max 1.500 (38.1) Min .019 (0.5) Dia Base Emitter Collector 45° .031 (.793)