NTE106 Silicon PNP Transistor Switching Transistor Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.36W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.06mW/°C Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.9mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit V(BR)CEO IC = 3mA, IB = 0, Note 1 15 – – V V(BR)CES IC = 100µA, VBE = 0 15 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 15 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 4.5 5.9 – V VCE = 8V, VBE = 0 – – 10 nA VCE = 8V, VBE = 0, TA = +125°C – – 5 µA VCE = 8V, VBE = 0 – – 1 nA IC = 1mA, VCE = 500mV 35 – – IC = 10mA, VCE = 300mV 50 – 120 IC = 10mA, VCE = 300mV, TA = –55°C 20 – – IC = 50mA, VCE = 1V, Note 1 40 – – OFF Characteristics Collector–Emitter Breakdown Voltage Collector Cutoff Current Base Current ICES IB ON Characteristics DC Current Gain hFE Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 1mA, IB = 0.1mA – – 0.15 V IC = 10mA, IB = 1mA – – 0.18 V IC = 50mA, IB = 5mA, Note 1 – – 0.6 V IC = 1mA, IB = 0.1mA – 0.7 0.8 V 0.75 0.86 0.90 V ON Characteristics (Cont’d) Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage VCE(sat) VBE(sat) IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA, Note 1 – 1.1 1.5 V 850 1100 – MHz Small–Signal Characteristics Current Gain–Bandwidth Product fT IC = 10mA, VCE = 10V, f = 100MHz Output Capacitance Cobo VCB = 5V, IE = 0, f = 140kHz – 2.0 3.0 pF Input Capacitance Cibo VBE = 500mV, IC = 0, f = 140kHz – 2.0 3.5 pF Turn–On Time ton – 10 15 ns Delay Time td VCC = 1.5V, VBE = 0, IC = 10mA, IB1 = 1mA – 5 10 ns Rise Time tr – 5 15 ns Turn–Off Time toff – 16 20 ns Stoirage Time ts – 17 20 ns Fall Time tf – 8 10 ns Storage Time ts – – 20 ns Switching Characteristics VCC = 1.5V, IC = 10mA, IB1 = IB2 = 1mA IC = 10mA, IB1 = 10mA, IB2 = 10mA Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Note 2. fT is defined as the frequency at which |hfe| extrapolates to unity. .230 (5.84) Dia Max .195 (4.95) Dia Max .210 (5.33) Max .030 (.762) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector 45° .041 (1.05)