NTE NTE184

NTE184 (NPN) & NTE185 (PNP)
Silicon Complementary Transistors
Audio Power Amp, Switch
Description:
The NTE184 (NPN) and NTE185 (PNP) are silicon complementary transistors in a TO126 plastic
package designed for use in power amplifier and switching circuits.
Features:
D Excellent Safe Area Limits
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
80
–
–
V
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 0.1A, IB = 0, Note 1
ICEO
VCE = 80V, IB = 0
–
–
1.0
mA
ICEX
VCE = 80V, VEB(off) = 1.5V
–
–
0.1
mA
VCE = 80V, VEB(off) = 1.5V, TC = +150°C
–
–
2.0
mA
ICBO
VCB = 80V, IE = 0
–
–
0.1
mA
IEBO
VBE = 5V, IC = 0
–
–
1.0
mA
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
IC = 1.5A, VCE = 2V
20
–
80
IC = 4A, VCE = 2V
7
–
–
IC = 1.5A, IB = 0.15A
–
–
0.6
V
IC = 4A, IB = 1A
–
–
1.4
V
IC = 1.5A, VCE = 2V
–
–
1.2
V
2.0
–
–
MHz
ON Characteristics (Note 1)
DC Current Gain
hFE
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
VCE(sat)
VBE(on)
Dynamic Characteristics
Current Gain–Bandwidth Product
fT
IC = 1A, VCE = 10V, f = 1MHz
Note 1. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. NTE184MP is a matched pair of NTE184 with their DC Current Gain (hFE) matched to within
10% of each other.
Note 3. NTE185MCP is a matched complementary pair containing 1 each of NTE184 (NPN) and
NTE185 (PNP).
.330 (8.38)
Max
.175
(4.45)
Max
.450
(11.4)
Max
.118 (3.0)
Dia
.655
(16.6)
Max
.030 (.762) Dia
E
C
B
.090 (2.28)
.130 (3.3)
Max