2305

NTE2305 (NPN) & NTE2306 (PNP)
Silicon Complementary Transistors
High Voltage Power Amplifier
TO−3PN Type Package
Description:
The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO−3PN type
package designed for use in high power audio amplifier applications and high voltage switching regulator circuits.
Features:
D High Collector−Emitter Sustaining Voltage: VCEO(sus) = 160V
D High DC Current Gain: hFE = 35 Typ @ IC = 8A
D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 8A
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1C/W
Note 1. Pulse Test: Pulse Width  5ms, Duty Cycle  10%.
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
160
−
−
V
VCE = 160V, VEB(off) = 1.5V
−
−
0.1
mA
VCE = 160V, VEB9off) = 1.5V, TC = +150C
−
−
5.0
mA
ICEO
VCE = 80V, IB = 0
−
−
750
A
Emitter−Base Cutoff Current
IEBO
VBE = 7V, IC = 0
−
−
1.0
mA
Collector−Base Cutoff Current
ICBO
VCB = 160V, IE = 0
−
−
750
A
OFF Characteristics
Collector−Emitter Sustaining Voltage
Collector−Emitter Cutoff Current
VCEO(sus) IC = 200mA, IB = 0, Note 2
ICEX
Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%.
Rev. 2−15
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VCE = 2V, IC = 8A
15
35
−
VCE = 4V, IC = 16A
8
15
−
IC = 8A, IB = 0.8A
−
−
2.0
V
IC = 16A, IB = 2A
−
−
3.5
V
ON Characteristics (Note 2)
DC Current Gain
hFE
Collector−Emitter Saturation Voltage
VCE(sat)
Base−Emitter Saturation Voltage
VBE(sat)
IC = 16A, IB = 2A
−
−
3.9
V
Base−Emitter ON Voltage
VBE(on)
VCE = 4V, IC = 16A
−
−
3.9
V
1.0
−
−
MHz
−
−
800
pF
Dynamic Characteristics
Current−Gain Bandwidth Product
Output Capacitance
fT
Cob
VCE = 20V, IC = 1A, f = 0.5MHz,
Note 3
VCB = 10V, IE = 0, f = 0.1MHz
Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%.
Note 3. fT = |hFE| S ftest.
.189 (4.8)
.614 (15.6)
.787
(20.0)
.590
(15.0)
.138
(3.5)
Dia
.889
(22.6)
B
.215 (5.45)
C
E