NTE NTE55

NTE54 (NPN) & NTE55 (PNP)
Silicon Complementary Transistors
High Frequency Driver for Audio Amplifier
Description:
The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case
designed for use as a high frequency driver in audio amplifier applications.
Features:
D DC Current Gain Specified to 4A:
hFE = 40 Min @ IC = 3A
= 20 MIn @ IC = 4A
D Collector–Emitter Sustaining Voltage: VCEO(sus) = 150V Min
D High Current Gain–Bandwidth Product: fT = 30MHz Min @ IC = 500mA
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Emitter–Base Voltage, VEB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.04W/°C
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/°C
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +2.5°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +62.5°C/W
Note 1. Matched complementary pairs are available upon request (NTE55MCP). Matched complementary pairs have their gain specification (hFE) matched to within 10% of each other.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VCE(sus)
IC = 10mA, IB = 0, Note 2
150
–
–
V
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ICEO
VCE = 150V, IB = 0
–
–
0.1
mA
ICBO
VCE = 150V, IE = 0
–
–
10
µA
IEBO
VCE = 150V, IC = 0
–
–
10
µA
hFE
VCE = 2V, IC = 0.1A
40
–
–
VCE = 2V, IC = 2A
40
–
–
VCE = 2V, IC = 0.1A
40
–
–
VCE = 2V, IC = 0.1A
20
–
–
VCE from 2V to 20V,
IC from 0.1A to 3A
–
2
–
NPN to PNP
–
3
–
ON Characteristics (Note 2)
DC Current Gain
DC Current Gain Linearity
hFE
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 1A, IB = 0.1A
–
–
0.5
V
Base–Emitter ON Voltage
VBE(on)
VCE = 2V, IC = 1A
–
–
1
V
VCE = 10V, IC = 500mA,
ftest = 10MHz, Note 3
30
–
–
MHz
Dynamic Characteristics
Current Gain–Bandwidth Product
ft
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 3. fT = |hfe| ftest
.420 (10.67)
Max
.110 (2.79)
.500
(12.7)
Max
.147 (3.75)
Dia Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Base
.100 (2.54)
Emitter
Collector/Tab