MJ802 Silicon NPN Transistor High Power Audio Amplifier TO−3

MJ802
Silicon NPN Transistor
High Power Audio Amplifier
TO−3 Type Package
Description:
The MJ802 is a silicon NPN transistor in a TO3 type case designed for use as an output device in audio
amplifiers to 100 watts music power per channel.
Features:
D High DC Current Gain: hFE = 25 − 100 @ IC = 7.5A
D Excellent Safe Operating Area
D Complement to the PNP MJ4502
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A
Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.14W/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.875C/W
Electrical Characteristics: (TC =+25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage V(BR)CER IC = 200mA, RBE = 100, Note 1
100
−
−
V
Collector−Emitter Sustaining Voltage VCEO(sus) IC = 200mA, Note 1
90
−
−
V
Collector−Base Cutoff Current
VCB = 100V, IE = 0
−
−
1.0
mA
VCB = 100V, IE = 0, TC = +150C
−
−
5.0
mA
VBE = 4V, IC = 0
−
−
1.0
mA
Emitter−Base Cutoff Current
ICBO
IEBO
Note 1. Pulse Test: Pulse Width  300s. Duty Cycle  2%.
Electrical Characteristics (Cont’d): (TC =+25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
hFE
IC = 7.5A, VCE = 2V
25
−
100
Base−Emitter ON Voltage
VBE(on)
IC = 7.5A, VCE = 2V
−
−
1.3
V
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 7.5A, IB = 750mA
−
−
0.8
V
Base−Emitter Saturation Voltage
VBE(sat)
IC = 7.5A, IB = 750mA
−
−
1.3
V
2.0
−
−
MHz
Dynamic Characteristics
Current Gain−Bandwidth Product
fT
IC = 1A, VCE = 10V, f = 1MHz
Note 1. Pulse Test: Pulse Width  300s. Duty Cycle  2%.
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.040 (1.02)
1.187 (30.16)
.665
(16.9)
.215 (5.45)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case