NTE NTE196

NTE196 (NPN) & NTE197 (PNP)
Silicon Complementary Transistors
Audio Power Output and Medium Power Switching
Description:
The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type package designed for use in general purpose amplifier and switching applications.
Features:
D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A
D Collector–Emitter Sustaining Voltage: VCEO(sus) = 70V Min
D High Current–Gain Bandwidth Product:
fT = 4MHz Min @ IC = 500mA (NTE196)
= 10MHz Min @ IC = 500mA (NTE197)
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.125°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 1
70
–
–
V
Collector Cutoff Current
Emitter Cutoff Current
ICEO
VCE = 60V, IB = 0
–
–
1.0
mA
ICEX
VCE = 80V, VEB(off) = 1.5V
–
–
100
µA
VCE = 80V, VEB(off) = 1.5V, TC = +150°C
–
–
2.0
mA
VBE = 5V, IC = 0
–
–
1.0
mA
IEBO
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
hFE
IC = 2A, VCE = 4V
30
–
150
IC = 7A, VCE = 4V
2.3
–
–
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 7A, IB = 3A
–
–
3.5
V
Base–Emitter ON Voltage
VBE(on)
IC = 7A, VCE = 4V
–
–
3.0
V
IC = 500mA, VCE = 4V, ftest = 1MHz,
Note 2
4
–
–
MHz
10
–
–
MHz
pF
Dynamic Characteristics
Current–Gain Bandwidth Product
NTE196
fT
NTE197
Output Capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
–
–
250
Small–Signal Current Gain
hfe
IC = 500mA, VCE = 4V, f = 50kHz
20
–
–
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. fT = |hfe| ftest
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Base
.100 (2.54)
Emitter
Collector/Tab