NTE NTE392

NTE392 (NPN) & NTE393 (PNP)
Silicon Complementary Transistors
General Purpose
Description:
The NTE392 (NPN) and NTE393 (PNP) are silicon compelementary transistors in a TO218 type package
designed for general purpose power amplifier and switching applications.
Features:
D 25A Collector Current
D Low Leakage Current: ICEO = 1mA @ VCE = 60V
D Excellent DC Gain: hFE = 40 Typ @ 15A
D High Current Gain Bandwidth Product: hfe = 3 Min @ IC = 1A, f = 1MHz
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Unclamped Inductive Load, ESB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90mJ
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35.7°C/W
Note 1. Pulse Test: Pulse Width = 10ms, Duty Cycle ≤ 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
100
–
–
V
OFF Characteristics
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 30mA, IB = 0, Note 2
Collector–Emitter Cutoff Current
Emitter–Base Cutoff Current
ICEO
VCE = 60V, IB = 0
–
–
1
mA
ICES
VCE = 100V, VEB = 0
–
–
0.7
mA
IEBO
VEB = 5V, IC = 0
–
–
1
mA
hFE
IC = 1.5A, VCE = 4V
25
–
–
IC = 15A, VCE = 4V
15
–
75
IC = 15A, IB = 1.5A
–
–
1.8
V
IC = 25A, IB = 5A
–
–
4
V
IC = 15A, VCE = 4V
–
–
2.0
V
IC = 25A, VCE = 4V
–
–
4.0
V
ON Characteristics (Note 2)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
VCE(sat)
VBE(on)
Dynamic Characteristics
Small–Signal Current Gain
hfe
IC = 1A, VCE = 10V, f = 1kHz
25
–
–
Current–Gain Bandwidth Product
fT
IC = 1A, VCE = 10V,
f = 1MHz, Note 3
3
–
–
MHz
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
Note 3. fT = |hfe| ftest
.600
(15.24)
.060 (1.52)
.173 (4.4)
C
.156
(3.96)
Dia.
B
C
.550
(13.97)
.430
(10.92)
E
.500
(12.7)
Min
.055 (1.4)
.015 (0.39)
.216 (5.45)
NOTE: Dotted line indicates that
case may have square corners