NTE392 (NPN) & NTE393 (PNP) Silicon Complementary Transistors General Purpose Description: The NTE392 (NPN) and NTE393 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications. Features: D 25A Collector Current D Low Leakage Current: ICEO = 1mA @ VCE = 60V D Excellent DC Gain: hFE = 40 Typ @ 15A D High Current Gain Bandwidth Product: hfe = 3 Min @ IC = 1A, f = 1MHz Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Unclamped Inductive Load, ESB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90mJ Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35.7°C/W Note 1. Pulse Test: Pulse Width = 10ms, Duty Cycle ≤ 10%. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 100 – – V OFF Characteristics Collector–Emitter Sustaining Voltage VCEO(sus) IC = 30mA, IB = 0, Note 2 Collector–Emitter Cutoff Current Emitter–Base Cutoff Current ICEO VCE = 60V, IB = 0 – – 1 mA ICES VCE = 100V, VEB = 0 – – 0.7 mA IEBO VEB = 5V, IC = 0 – – 1 mA hFE IC = 1.5A, VCE = 4V 25 – – IC = 15A, VCE = 4V 15 – 75 IC = 15A, IB = 1.5A – – 1.8 V IC = 25A, IB = 5A – – 4 V IC = 15A, VCE = 4V – – 2.0 V IC = 25A, VCE = 4V – – 4.0 V ON Characteristics (Note 2) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter ON Voltage VCE(sat) VBE(on) Dynamic Characteristics Small–Signal Current Gain hfe IC = 1A, VCE = 10V, f = 1kHz 25 – – Current–Gain Bandwidth Product fT IC = 1A, VCE = 10V, f = 1MHz, Note 3 3 – – MHz Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%. Note 3. fT = |hfe| ftest .600 (15.24) .060 (1.52) .173 (4.4) C .156 (3.96) Dia. B C .550 (13.97) .430 (10.92) E .500 (12.7) Min .055 (1.4) .015 (0.39) .216 (5.45) NOTE: Dotted line indicates that case may have square corners