NTE NTE263

NTE263 (NPN) & NTE264 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in
a TO220 type package designed for general purpose amplifier and low–speed switching applications.
Features:
D High DC Current Gain:
= 2500 Typ (NTE263)
hFE
= 3500 Typ (NTE264)
D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min
D Low Collector–Emitter Saturation Voltage:
VCE(sat) = 2V Max @ IC = 5A
D Monolithic Construction with Built–In Base–Emitter Shunt Resistor
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.52W/°C
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.016W/°C
Operating Junction Temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.92°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
100
–
–
V
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 200mA, IB = 0, Note 1
ICEO
VCE = 100V, IB = 0
–
–
1.0
mA
ICEX
VCE = 100V, VEB(off) = 1.5V
–
–
300
µA
VCE = 100V, VEB(off) = 1.5V, TC = +125°C
–
–
3
mA
IEBO
VBE = 5V, IC = 0
–
–
5
mA
hFE
IC = 5A, VCE = 3V
1000
–
20000
IC = 10A, VCE = 3V
100
–
–
IC = 5A, IB = 0.01A
–
–
2
V
IC = 10A, IB = 0.1A
–
–
3
V
IC = 3A, VCE = 3V
–
–
2.8
V
IC = 10A, VCE = 3V
–
–
4.5
V
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
VCE(sat)
VBE(on)
Dynamic Characteristics
Small–Signal Current Gain
|hfe|
IC = 1A, VCE = 5V, ftest = 1MHz
20
–
–
Output Capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
–
–
200
Small–Signal Current Gain
hfe
IC = 1A, VCE = 5V, f = 1kHz
1000
–
–
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
NTE263
.420 (10.67)
Max
C
.110 (2.79)
B
E
.147 (3.75)
Dia Max
.500
(12.7)
Min
.250 (6.35)
Max
NTE264
C
.500
(12.7)
Max
.070 (1.78) Max
B
Base
.100 (2.54)
E
Emitter
Collector/Tab
pF