NTE2570 (NPN) & NTE2571 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector–Emitter Saturation Voltage D High Current Capacity Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Collector Power Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cut–Off Current ICBO VCB = 80V, IE = 0 – – 0.1 mA Emitter Cut–Off Current IEBO VEB = 4V, IC = 0 – – 3.0 mA DC Current Gain hFE VCE = 2V, IC = 1A 100 – 280 VCE = 2V, IC = 4A 30 – – VCE = 5V, IC = 1A – 20 – MHz IC = 5A, IB = 10mA – – 0.4 V – – 0.5 V 90 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 80 – – V Emitter–Base Breakdown Voltage 6 – – V Gain–Bandwidth Product Collector–Emitter Saturation Voltage NTE2570 fT VCE(sat) NTE2571 Collector–Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 V(BR)EBO IC = 1mA, IC = 0 Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Turn–On Time NTE2570 ton VCC = 50V, VBE = –5V, 10IB1 = –10IB2 = IC = 2A, Pulse Width = 20µs µ Duty Cycle ≤ 1% NTE2571 Storage Time NTE2570 Test Conditions tstg NTE2571 Fall Time NTE2570 tf NTE2571 Min Typ Max Unit – 0.1 – µs – 0.2 – µs – 1.6 – µs – 0.7 – µs – 0.4 – µs – 0.2 – µs Note 1. For NTE2571, the polarity is reversed. .402 (10.2) Max .173 (4.4) Max .224 (5.7) Max .122 (3.1) Dia .114 (2.9) Max .295 (7.5) .165 (4.2) .669 (17.0) Max B C E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated